蓝宝石/SiO_2/AlN/GaN多层结构表面热应力仿真分析

为了研究蓝宝石/SiO_2/AlN/GaN光阴极组件外延片热应力分布及影响因素,以直径d为φ40 mm的GaN外延片为研究对象,利用有限元分析法对其表面热应力分布进行了理论计算和仿真,验证了仿真模型的合理性。分析了外延片径向和厚度方向的应力分布,结果显示:在1200℃的生长温度下,径向区域内的热应力分布比较均匀,热应力变化范围为±1.38%;生长温度在400℃到1200℃范围内,外延层表面应力与生长温度呈近似正比关系。分析了外延片生长温度、蓝宝石衬底和SiO_2、AlN过渡层厚度对表面热应力的影响。研究成果可为该类外延片生长工艺研究和低应力外延片的筛选标准制定提供借鉴。     

超薄芯片叠层封装器件热可靠性分析

采用通用有限元软件MSC.Marc,模拟分析了一种典型的多层超薄芯片叠层封装器件在经历回流焊载荷后的热应力及翘曲分布情况,研究了部分零件厚度变化对器件中叠层超薄芯片翘曲、热应力的影响。结果表明:在整个封装体中,热应力最大值(116.2 MPa)出现在最底层无源超薄芯片上,结构翘曲最大值(0.028 26 mm)发生于模塑封上部边角处。适当增大模塑封或底层无源芯片的厚度或减小底充胶的厚度可以减小叠层超薄芯片组的翘曲值;适当增大底层无源超薄芯片的厚度(例如0.01 mm),可以明显减小其本身的应力值10 MPa以上。     

通过热应力分析改善AOTF键合层附着力

针对声光可调滤光器(AOTF)压电换能器和声光晶体键合后出现附着力差的问题开展分析,根据热应力理论计算AOTF键合层各层的热应力分布情况,提出通过增加过渡层改善键合层应力特性。当过渡层Au膜厚为200nm时,理论上键合层和声光晶体间的热应力减小到-0.613 MPa,能够保证膜层的附着强度。测试结果显示,添加过渡层后频率响应的3dB带宽增加,衍射效率提高了2%~4%。     

基于复合介质层材料的硅通孔热结构耦合分析

硅通孔(TSV)技术是三维封装的关键技术,对三维IC的可靠性起决定性作用。基于ANSYS Workbench平台,通过有限元仿真对退火阶段的TSV模型进行热结构耦合分析。比较了二氧化硅(SiO₂)介质层与苯并环丁烯(BCB)介质层在不同负载下的热应力,研究了不同填充材料、介质层厚度、通孔直径、深宽比条件下的热应力分布和热应力影响,分析了碳纳米管掺杂的苯并环丁烯(BCB-CNT)介质层的热应力。结果表明,该复合介质层能有效降低热应力,提高了三维IC的可靠性。     

多层GaN外延片表面热应力分布及影响因素

为了研究蓝宝石/AlN/GaN外延片表面层热应力分布及影响因素,以直径d为40 mm的外延片为研究对象,利用有限元分析法对其表面热应力分布进行了理论计算和仿真,验证了仿真模型的合理性。分析了外延片生长温度、蓝宝石衬底和AlN过渡层厚度对表面热应力的影响。结果显示:在1 200℃的生长温度下,外延片径向应力比轴向应力大一个量级;在径向（d32 mm）区域内的热应力分布比较均匀,热应力变化范围为0.38%;生长温度在600~1 200℃范围内,外延层表面应力与生长温度呈近似正比关系。研究成果可为该类外延片生长工艺研究和低应力外延片的筛选标准制定提供借鉴。     

RF MLCC热应力分析

采用有限元方法,应用ANSYS软件．模拟不同内电极结构和不同端电极厚度的RF MLCC在热冲击时的热应力分布。模拟结果显示：端电极倒角处、银电极与内电极引出端的接触处所受von mises热应力较大．是热应力下RF MLCC结构中最薄弱的部位：结构中的峰值热应力随温度循环次数的增加而增加,五次循环后的热应力约为首次循环的4．5倍;悬浮内电极结构银电极上的最大热应力远小于正常内电极结构;增加银电极厚度可以大大减小热应力,对于13层悬浮内电极结构的RF MLCC．银电极厚度增加一倍,其所受热应力最大值减少约50％。本次仿真结合了自由划分和映射划分,并且多次局部细化网格,消除了畸形网格,使得各次仿真的能量准则百分比误差均小于2％。为分析RF MLCC热失效机制、优化结构、提高其可靠性提供了理论依据。     

AlN薄膜的热应力模拟计算

本文通过ANSYS有限元分析软件对薄膜的热应力进行了模拟计算,并通过理论计算验证了其合理性.模拟出了薄膜应力值及分布情况,分析了薄膜沉积温度与薄膜厚度对薄膜度应力的影响.从模拟的结果可以看出,薄膜上表面X方向应力主要集中在薄膜中心,边缘应力较小,但边缘的形变较大;薄膜的热应力随着薄膜沉积温度的升高而增大,随着膜厚的增加...     

碲镉汞大面阵红外探测器模块结构应力的有限元分析

借助有限元软件分析了原始探测器模块和加入Kovar平衡层探测器模块的应力分布情况,模拟结果表明,增加Kovar平衡层后,探测器HgCdTe外延层上的热应力有所减小,而探测器芯片表面中心位置处的形变量明显减小.在不改变平衡层材料前提下,当平衡层厚度为0.2 mm、0.5 mm、1 mm、1.5 mm和2 mm时,HgCd...     

晶圆尺寸级封装器件的热应力及翘曲变形

晶圆尺寸级封装(WLCSP)器件的尺寸参数和材料参数都会对其可靠性产生影响。使用有限元分析软件MSCMarc,对EPS/APTOS生产的WLCSP器件在热循环条件下的热应力及翘曲变形情况进行了模拟,分析了器件中各个尺寸参数对其热应力及翘曲变形的影响。结果表明:芯片厚度、PCB厚度、BCB厚度和上焊盘高度对WLCSP的热应力影响较为明显。其中,当芯片厚度由0.25mm增加到0.60mm时,热应力增加了21.60MPa;WLCSP的翘曲变形主要受PCB厚度的影响,当PCB厚度由1.0mm增加到1.60mm时,最大翘曲量降低了20%。     

10.6 μm激光对HgCdTe焦平面器件热应力的分析

建立了HgCdTe红外焦平面器件的多膜层理论模型,利用有限元分析的方法,对10.6μm激光辐照下HgCdTe红外焦平面器件的升温情况与热应力分布情况进行模拟,并通过参考已有文献的实验结果,验证了理论模型的合理性。理论分析结果表明:激光作用时探测器的温度场变化剧烈,200 W/cm2连续激光作用1 s后,HgCdTe感光层所受热应力为-986 MPa;脉宽100 ns,功率密度15 MW/cm2脉冲激光作用后,HgCdTe感光层所受热应力为-1300 MPa,都比器件制造过程中由于热失配而产生的热应力大;应力损伤发生的概率增大,可能比热损伤先发生,是HgCdTe红外焦平面器件激光损伤中的重要原因。     

Hydride vapor-phase epitaxial GaN thick films for quasi-substrate applications: Strain distribution and wafer bending

The strain distribution in thick hydride vapor-phase epitaxial (HVPE)-GaN layers grown on metal-organic vapor-phase epitaxial GaN templates was studied by means of photoluminescence, x-ray mapping, and lattice parameter analysis. A variable temperature x-ray study of the film curvature was used for verification of the strain type. The relation between the strain inhomogeneity and the wafer bending in films residing on sapphire and freestanding on the thickness of the layer and the substrate is analyzed. Possibilities to improve the uniformity of the film characteristics and to reduce the bending of the HVPE-GaN films are discussed.     

Characterization of flexural and thermo-mechanical behavior of plastic ball grid package assembly using moiré interferometry

Flexural and thermo-mechanical behavior of a wire-bond plastic ball grid array (WB-PBGA) package assembly is characterized using moiré interferometry. Fringe patterns are recorded and analyzed at several bending loads and temperatures. Detailed global and local deformations of the assembly are investigated. The deformations caused by the thermally induced bending are compared with those caused by the mechanical bending. The results reveal that global bending modes are similar but the deformations at the critical locations are significantly different; the sign (direction) of the shear strain caused by the mechanical bending is the opposite of that caused by the thermal loading. The implication of the opposite bending on board level reliability is discussed.     

Ferroelastic Strain Induced Antiferroelectric‐Ferroelectric Phase Transformation in Multilayer Thin Film Structures

Coupling effects among mechanical, electrical and magnetic parameters in thin film structures including ferroic thin films provide exciting opportunity for creating device functionalities. For thin films deposited on a substrate, their mechanical stress and microstructure are usually determined by the composition and processing of the films and the lattice and thermal mismatch with the substrate. Here it is found that the stress and structure of an antiferroelectric (Pb_0.97,La_0.02)(Zr_0.90,Sn_0.05,Ti_0.05)O₃ (PLZST) thin film are changed completely by a ferroelastic strain in a magnetic shape memory (MSM) alloy Ni‐Mn‐Ga (NMG) thin film on the top of the PLZST, despite the existence of the substrate constraint. The ferroelastic strain in the NMG film results in antiferroelectric (AFE) to ferroelectric (FE) phase transformation in the PLZST layer underneath. This finding indicates a different strategy to modulate the structure and function for multilayer thin films and to create unprecedented devices with ferroic thin films.     

Stress relaxation and thermal evolution of film properties in amorphous carbon

A model for the stress relaxation of amorphous carbon films containing high concentrations of fourfold coordinated carbon is presented. The onset of stress relaxation in these materials occurs following thermal annealing at temperatures as low as 100°C, and near full stress relaxation occurs after annealing at 600°C. The stress relaxation is modeled by a series of first order chemical reactions which lead to a conversion of some fourfold coordinated carbon atoms into threefold coordinated carbon atoms. The distribution of activation energies for this process is derived from the experimental measurements of stress relaxation and is found to range from 1 eV to over 3 eV. Permanent increases in the electrical conductivity of the carbon films are also found following thermal annealing. The electrical conductivity is found to be exponentially proportional to the number of additional threefold atoms which are created upon annealing, with the increase in threefold atom concentration being deduced from the stress relaxation model. This indicates that the increase in electrical conductivity and the stress relaxation originate from the same fourfold to threefold conversion process and that electrical transport through these films is dominated by a hopping conduction process.     

A study of residual stress distribution through the thickness of p+ silicon films [thermal oxidation effects]

The effect of thermal oxidation on the residual stress distribution throughout the thickness of heavily-boron-doped (p⁺ ) silicon films is studied. The deflection of p⁺ silicon cantilever beams due to residual stress variation throughout the film thickness is studied for as-diffused and thermally oxidized films. Cantilevers of as-diffused p⁺ silicon films display a positive curvature (or a negative bending moment), signified by bending up of the beams. Thermal oxidation of the films prior to cantilever fabrication by anisotropic etching modifies the residual stresses in the p⁺ film, specially in the near-surface region (i.e. the top 0.3 to 0.5 μm for the oxidation times used here), and can result in beams with a negative curvature even when the oxide is removed from the p⁺ silicon cantilever surface subsequent to cantilever fabrication     

The effect of strain on abnormal grain growth in Cu thin films

To understand a grain growth mechanism in Cu thin films that were deposited on rigid substrates by sputter deposition and subsequently annealed at various temperatures, microstructures of the Cu films with or without the rigid substrates were analyzed by x-ray diffraction (XRD), transmission electron microscopy (TEM), and electrical resistivity measurements. Significant grain growth (with bimodal grain size distribution) was observed during room-temperature storage in the Cu films deposited on the Si₃N₄ and rock salt substrates. However, in the free-standing Cu films, no grain growth was observed during room temperature storage. The present result suggested that the grain growth rates in the Cu thin films were strongly influenced by the existence of the rigid substrates, indicating stress (or strain) introduced in the films was a primary factor to induce the grain growth in the Cu films.     

CO2激光辐照下光学薄膜的温度场与热畸变

介绍了光学薄膜温度场的基本理论,利用交替隐型技术,对10.6μm激光辐照下介质薄膜的温度场分布进行了数值模拟和理论分析。在此基础上,利用夏克-哈特曼波前传感器对介质基底样品、不同厚度的介质单层膜样品以及不同膜系的YbF3/ZnSe介质多层膜样品在10.6μmCO2激光辐照下的热畸变进行了实验研究。研究结果表明,激光辐照下光学薄膜样品的温度场分布与辐照激光的光场分布、激光功率以及激光的辐照时间等因素有关。对于10.6μm激光而言,Ge最适宜做基底材料。     

ZnTe/Si(211)与ZnTe/GaAs(211)异质结构的热应变研究

通过理论计算获得ZnTe/Si（211）与ZnTe/GaAs（211）异质结构样品室温下的热应变分布与曲率半径,并采用激光干涉仪测量两个样品室温下的曲率半径。研究发现,在（211）面上进行异质外延,两个互相垂直的晶向方向[1-1-1]和[01-1]的应变分布呈现各向异性,且沿两个方向上的表面曲率半径亦存在差异。ZnTe/GaAs（211）样品的激光干涉测量结果与理论计算较为吻合,均为同一数量级的表面曲率半径方向为负的张应变,ZnTe/Si（211）样品的测量结果则存在较大差异。由于Si衬底在高温脱氧的过程中产生了表面曲率半径方向为正的塑性形变,在一定程度上降低了外延ZnTe后异质结构的弯曲程度,减小了热失配应变。     

多靶磁控共溅射纳米Ta-Al-N薄膜的阻挡性能研究

采用磁控反应共溅射方法制备了纳米Ta-Al-N薄膜,并原位制备了Cu/Ta-Al-N薄膜,对薄膜进行了热处理。用四探针测试仪、X射线衍射仪(XRD)、扫描电镜(SEM)、原子力显微镜(AFM)以及台阶仪等研究了退火对薄膜结构及阻挡性能的影响。结果表明,Ta-Al-N薄膜具有优良的热稳定性,保持非晶态且能对Cu有效阻挡的温度可达800°C;同时发现在900°C退火5 min后,薄膜开始晶化,在Cu/Ta-Al-N/Si界面处生成了Cu3Si等相,表明此时Ta-Al-N薄膜阻挡层开始失效。     

Residual strain in cadmium telluride/gallium arsenide (001) heterostructures as a function of temperature

Optical studies of residual strain in cadmium telluride (CdTe) films grown using molecular beam epitaxy on gallium arsenide (GaAs) substrate have been performed using photoreflectance techniques. Measurements have been conducted to determine the fundamental transition energy, heavy-hole and light-hole transition energy critical-point parameters in a range of temperatures between 12 and 300 K. There are problems inherent in the fabrication of optoelectronic devices using high-quality CdTe films, due to strain effects resulting from both the lattice mismatch (CdTe: 14.6%) and the thermal expansion coefficient difference. The CdTe film exhibits compressive stress causing valence-band splitting for light and heavy holes. We have used different models to fit the obtained experimental data and, although the critical thickness for the CdTe has been surpassed, the strain due to the lattice mismatch is still significant. However, the strain due to the thermal expansion is dominant. We have found that the fundamental transition energy, E₀, is affected by the compressive strain and the characteristic values are smaller than those reported. In addition, the total strain is compressive for the full measured range, since the strain due to the lattice mismatch is one order of magnitude higher than that calculated from the thermal expansion.