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采用直流磁控溅射工艺实现氧化锌压敏陶瓷的金属化,提出以三层电极膜系(镍铬/铜/银)的结构来获得更优的机械性能和电性能。与传统丝印烧结银浆金属化工艺相比,磁控溅射工艺绿色环保,溅射电极的厚度可控,与基底的附着力更强,且具有更优的电性能。研究结果表明,采用磁控溅射工艺,膜层附着力可以从9.7 MPa提高到13.9 MPa;器件的非线性系数和压敏电压分别增加了45.5%和5.6%,漏电流降低了55%;经过125℃、100h的高温负荷寿命试验后,压敏电压变化率从1.32%降低到了0.61%。对于氧化锌压敏电阻,磁控溅射法制备的三层膜电极的电气性能、机械性能和可靠性均远优于烧银电极,具有良好的应用前景。 相似文献
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压电陶瓷换能器和压电陶瓷材料的应用与发展 总被引:5,自引:0,他引:5
压电陶瓷换能器广泛应用于数据处理、信息处理、通讯、声纳、陀螺、水声器、记步器、激光器、喷墨打印、超声清洗、超声焊接、报警、以及燃气设备等行业和技术领域中。 压电陶瓷换能器的制造是经过配料、烧结、机械加工、表面金属化、用直流电场进行极化处理而得到。压电陶瓷的物理、化学和压电特性为适合特殊的应用可以通过设计相应的压电陶瓷材料配方并辅以一定的工艺技术而实现。 相似文献
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用Mo-Mn-Ti-Si-Al系统膏剂金属化两种氧化铝陶瓷材料。封接强度实验结果表明,Mo-Mn-Ti-Si-Al系统膏剂不适宜高纯Al2O3陶瓷的金属化封接,而比较适宜95%Al2O3陶瓷的金属化封接。用该膏剂金属化95%Al2O3陶瓷,其焊接强度最高值可达150MPa以上。通过显微结构分析发现,高纯Al2O3陶瓷的金属化机理与95%Al2O3陶瓷金属化的机理不同,前者中玻璃相仅仅通过高温熔解-沉析与表面的Al2O3晶粒反应,后者金属化层内玻璃相与陶瓷内玻璃相相互迁移渗透。 相似文献
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本文介绍了一种应用陶瓷混合微电子技术制作小型、可靠电路的方法。从电路所用陶瓷基片的原材料及加工到陶瓷基片的多层制作工艺都进行了详细地描述。本文尤其详细地描述了陶瓷混合电路的涂敷工艺,即电路陶瓷基片上金属化布线的化学镀镍工艺流程。同时还介绍了陶瓷基片及塑料基体材料的化学镀镍工艺流程。 相似文献
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用银、锰、铜合金焊接金属与陶瓷,不需要预先将陶瓷金属化,就能将金属一次焊接到陶瓷上。在远低于银熔点的温度下,合金就熔化了,这样,不待熔化银镀层就能把镀银的金属部件焊接到陶瓷上面。 相似文献
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采用活化Mo-Mn法对99%氧化铍陶瓷进行了金属化实验和抗拉强度实验.封接强度实验结果表明,活化Mo-Mn法适合99%氧化铍陶瓷金属化封接,其焊接强度与氧化铝陶瓷相当.通过对99%氧化铍陶瓷金属化层的显微结构及金属层中的元素在金属层及陶瓷中的分布情况分析,探讨了99%氧化铍陶瓷Mo-Mn金属化机理.研究发现,99%氧化铍陶瓷金属化时,在氧化铍陶瓷和Mo海绵骨架中间形成了一层约3μm的过渡层,金属化层的Mo海绵骨架结构通过过渡层与氧化铍陶瓷基体紧密连接. 相似文献
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通过对高纯、细晶Al2O3陶瓷金属化层、金属化层被酸腐蚀后的陶瓷表面显微结构及金属化层中元素在金属化层与陶瓷中的分布情况分析,探讨了高纯、细晶Al2O3陶瓷的Mo-Mn金属化机理。研究发现高纯、细晶Al2O3陶瓷的金属化机理与95%Al2O3陶瓷存在很大不同,高纯、细晶Al2O3陶瓷金属化时,Al2O3相通过溶解-沉淀传质过程,细小颗粒和固体颗粒表面凸起部分溶解,并在金属化层中的较大Al2O3颗粒表面析出。在Al2O3颗粒生长和形状改变的同时,金属化层形成致密结构,完成了烧结,实现了金属化层与高纯、细晶Al2O3陶瓷的紧密结合。 相似文献
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V. M. Koval A. V. Ivashchuk Y. Yakymenko M. G. Dusheyko Yu. V. Yasievich G. S. Khrypunov Ye. I. Sokol 《Radioelectronics and Communications Systems》2016,59(2):53-59
In this article we have synthesized multilayer contact systems Ti/Ag and Ti/Mo/Ag with nanostructured silver films using two vacuum methods, namely the method of electron-beam evaporation and HF magnetron sputtering. Using the data of atomic force microscopy, X-ray diffraction and mass spectroscopy of the secondary neutrals in the paper we have investigated the influence of the application method and of the annealing conditions on the grain formation processes in silver thin films and mass transfer between the metal layers of the contact system. The decrease of surface resistivity of the developed contacts and, respectively, the increase of short-circuit current of the heterojunction silicon solar cells have been determined. 相似文献
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Zijian Wu Jian Cai Junqiang Wang Zhiting Geng Qian Wang 《Journal of Electronic Materials》2018,47(2):988-993
Silver nanoparticles (Ag NPs) fabricated by physical vapor deposition (PVD) were introduced in Cu-Cu bonding as surface modification layer. The bonding structure consisted of a Ti adhesive/barrier layer and a Cu substrate layer was fabricated on the silicon wafer. Ag NPs were deposited on the Cu surface by magnetron sputtering in a high-pressure environment and a loose structure with NPs was obtained. Shear tests were performed after bonding, and the influences of PVD pressure, bonding pressure, bonding temperature and annealing time on shear strength were assessed. Cu-Cu bonding with Ag NPs was accomplished at 200°C for 3 min under the pressure of 30 MPa without a post-annealing process, and the average bonding strength of 13.99 MPa was reached. According to cross-sectional observations, a void-free bonding interface with an Ag film thickness of around 20 nm was achieved. These results demonstrated that a reliable low-temperature short-time Cu-Cu bonding was realized by the sintering process of Ag NPs between the bonding pairs, which indicated that this bonding method could be a potential candidate for future ultra-fine pitch 3D integration. 相似文献
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本文介绍了声表面波(SAW)卷积器/存储相关器用优质氧化锌(ZnO)压电膜的制备方法。用平面磁控溅射技术溅射ZnO陶瓷靶沉积出了激励SAW西沙瓦模式的优质ZnO膜。用同轴磁控溅射技术溅射ZnO陶瓷靶沉积出的优质ZnO膜制作ZnO/Si单片式SAW卷积器,使该器件性能进一步改善,同时给出了相应的实验结果。 相似文献
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In the present work, silicon-to-silicon anodic bonding has been accomplished using an intermediate sodium-rich glass layer deposited by a radiofrequency magnetron sputtering process. The bonding was carried out at low direct-current voltage of about 80 V at 365°C. The alkali ion (sodium) concentration in the deposited film, the surface roughness of the film, and the flatness of the silicon wafers were studied in detail and closely monitored to improve the bond strength of the bonded silicon wafers. The effect of chemical mechanical polishing (CMP) on the surface roughness of the deposited film was also investigated. The average roughness of the deposited film was found to be ~6 Å, being reduced to 2 Å after CMP. It was observed that the concentration of sodium ions in the deposited film varied significantly with the sputtering parameters. Scanning electron microscopy was used to obtain cross-sectional images of the bonded pair. The bonding energy of the bonded wafer pair was measured using the crack-opening method. The bonding energy was found to vary from 0.3 J/m2 to 2.1 J/m2 for different bonding conditions. To demonstrate the application of the process developed, a sealed cavity was created using the silicon-to-silicon anodic bonding technique, which can be used for fabrication of devices such as capacitive pressure sensors and Fabry– Perot-based pressure sensors. Also, a matrix of microwells was fabricated using this technique, which can be used in various biomicroelectromechanical system applications. 相似文献
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A copper pad oxidizes easily at elevated temperatures during thermosonic wire bonding for chips with copper interconnects.
The bondability and bonding strength of a gold wire onto a bare copper pad are seriously degraded by the formation of a copper
oxide film. A new bonding approach is proposed to overcome this intrinsic drawback of the copper pad. A silver layer is deposited
as a bonding layer on the surface of copper pads. Both the ball-shear force and the wire-pull force of a gold wire bonded
onto copper pads with silver bonding layers far exceed the minimum values stated in the JEDEC standard and MIL specifications.
The silver bonding layer improves bonding between the gold ball and copper pads. The reliability of gold ball bonds on a bond
pad is verified in a high-temperature storage (HTS) test. The bonding strength increases with the storage time and far exceeds
that required by the relevant industrial codes. The superior bondability and high strength after the HTS test were interpreted
with reference to the results of electron probe x-ray microanalyzer (EPMA) analysis. This use of a silver bonding layer may
make the fabrication of copper chips simpler than by other protective schemes. 相似文献