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1.
采用均匀沉淀法将MgO均匀地包覆在BaTiO3基陶瓷粉体表面,制备包覆MgO的BaTiO3基陶瓷复合粒子,研究了不同包覆量对BaTiO3基陶瓷的微观结构、微观形貌、介电性能、绝缘性能和击穿电压的影响。实验表明:包覆剂MgO能有效抑制晶粒长大,从而获得晶粒均匀的陶瓷,此细晶效应是由于晶界区MgO的抑制作用;MgO有助于形成“壳-芯”结构晶粒,降低并展宽BaTiO3基陶瓷的ε峰,增加电阻率和击穿电压强度。  相似文献   

2.
采用传统的水热合成法,将La3+/Ca2+直接掺杂到反应物体系中,制备了La3+/Ca2+共掺钛酸钡(BaTiO3)粉体;XRD晶相分析表明,所制备的粉体晶相结构单一,为四方相钙钛矿型晶体结构;SEM形貌分析表明,适量的La3+/Ca2+掺杂有利于钛酸钡陶瓷的致密化烧结,并且能够改善其介电性能。电学性能分析结果表明,随着La3+与Ca2+质量分数比的增大,其介电常数和绝缘电阻先增大后减小,而介电损耗的变化规律则恰好相反。当La3+与Ca2+质量分数比为2∶1时,其介电常数达到最大值,得到了介电常数为4 900、介质损耗为0.014 8、绝缘电阻为3.0×1012Ω的高介电低损耗粉体。  相似文献   

3.
本文在还原性气氛(H2)中制备出Cr2O3、Al2O3掺杂的V2O3系PTC陶瓷。测量了材料的电阻率、采用XRD、SEM分析了材料的结构。并初步讨论了液氮淬冷对V2O3系PTC陶瓷的结构及PTC性能的影响。  相似文献   

4.
采用氧化物混合工艺制备了La2O3和Cr2O3共掺杂的CaCu3Ti4O12(CCTO)陶瓷材料。通过XRD、介电温度特性等测试手段,研究了掺杂不同浓度的La2O3和Cr2O3对CCTO体系陶瓷介电性能的影响,并对掺杂机理进行了分析.研究结果表明:分别掺杂La2O3和Cr2O3的CCTO陶瓷的介电损耗为~0.2,比纯的CCTO陶瓷样品低,而介电常数仍保持在~104;掺杂0.03at%La2O3和0.08at%Cr2O3的CCTO陶瓷材料的介电常数为4.4×104,介电损耗可降至0.15.因此,通过共掺杂的方法可以在有效降低CCTO陶瓷介质损耗的同时,仍维持高的介电常数.  相似文献   

5.
The dependence of electrical properties of Ba0.92Ca0.08TiO3 PTCceramics on the SiO2 or TiO2 content was studied. The dependence of room temperature resistivity on the SiO2 content was determined by the variation of the microstructure of Ba0.92Ca0.08TiO3 PTC ceramics. It was shown that a small amount of excessive TiO2 (2mol%) added could increase the dielectric constant of materials, and it results in a reducing of the potential height (e*φ) of grain boundary. Thus, samples with particularly low room temperature resistivity were obtained. The relationship of PTC effect with the TiO2 content was also discussed by using the chemistry defect theory. The inferior PTC effect caused by excessive TiO2 may be concerned with the behavior of oxygen vacancies in the grains of ceramics.  相似文献   

6.
Nd^3+ doped lead zirconate titanate (Pb1-3x/2NdxZr0.52Ti0.48O3, PNZT) nanopowders were prepared through a modified sol-gel method. The effects of Nd^3+ doping on the microstructures and properties of PNZT ceramics have been studies. The grain sizes of the perovskite PNZT nanopowders were about 100nm and the lattice distortion of the PNZT increased with the content of Nd^3+ up to 9 mol%. The dopant of Nd^3+ resulted in the decrease of crystal lattice parameter a and the obvious increase of c and c/a, which effectively improved the sintered densification and activity of the PNZT ceramics. Due to lead vacancies caused by the doping of Nd3^+ in the PZT, the piezoelectric constant, electromechanical coupling coefficient and dielectric constant observed were much higher than the monolithic PZT.  相似文献   

7.
采用X射线衍射(XRD)、拉曼光谱(RS)、原子力显微镜(AFM)以及介电温谱(DTC)研究BaTiO3-xNb2O5-0.005Co2O3(x=0.02,0.04,0.08)系统中Nb含量变化对陶瓷的结构及介电温度稳定性的影响.结果表明:增加Nb含量将增强介电陶瓷的温度稳定性,但介电常数降低.Nb含量在4%以上时NC陶瓷满足X7R介电指标.  相似文献   

8.
The effect of SiO2 doping on the sintering behavior,microstructure,and dielectric properties of BaTiO3-based ceramics has been investigated.Silica was added to the BaTiO3-based powder prepared by the solid state method with 0.075mo1%,0.15mo1%,and 0.3mo1%,respectively.The SiO2-doped BaTiO3-based ceramic with high density and uniform grain size were obtained,which were sintered in reducing atmosphere.A scanning electron microscope,X-ray diffraction,and LCR meter were used to determine the microstructure as well as the dielectric properties.SiO2 can form a liquid phase belonging to the ternary system of BaO-TiO2-SiO2,leading to the formation of BaTiO3 ceramics with high density at a lower sintering temperature.The SiO2-doped BaTiO3-based ce-ramics can be sintered to a theoretical density higher than 95% at 1220℃ with a soaking time of 2 h.The dielectric constants of the sample with 0.15mo1% SiO2 addition sintered at 1220℃ is about 9000.Doping with a small amount of silica can improve the sinter-ing and dielectric properties of BaTiO3-based ceramics.  相似文献   

9.
采用氧化物法制备La掺杂Ni-Zn铁氧体,样品的相组成成分、微结构和电磁性能分别采用X射线衍射仪(XRD)、阻抗分析仪和振动样品磁强计(VSM)进行表征,讨论了Ni0.5Zn0.5LaxFe2-xO4(x=0.002~0.010)铁氧体的结构和电磁性能。结果表明:x=0.008和0.010时,样品中有LaFeO3第二相出现;随着La3+掺杂量的增加,晶格常数、微晶尺寸和介电常数均呈现先增大后减小,并且都在x=0.006时出现峰值;电阻率和饱和磁化强度均呈现先减小后增大,且均在x=0.006时出现最小值。除了Ni0.5Zn0.5La0.002Fe1.998O4样品外,其他样品的介电损耗角正切均有峰值出现,表现出异常的介电行为。  相似文献   

10.
以BaCO3和TiO2为原料、Y2O3为添加剂制备了Y3+离子掺杂BaTiO3基电容器陶瓷试样。采用XRD和SEM技术分析了试样的物相和陶瓷的显微结构,测试了Y3+离子掺杂BaTiO3基电容器陶瓷系列试样的介电性能。结果表明,当Y3+离子掺杂浓度为0.3mol%时,在1310℃保温时间为2h时,可制备介电常数为13965.4,介质损耗为0.110的BaTiO3基电容器陶瓷材料。  相似文献   

11.
应用冷压陶瓷技术制备Dy分别掺杂在BaTiO3中的Ba位、Ti位和Ba/Ti位的陶瓷.采用X射线衍射(XRD)、拉曼光谱(RS)和电子顺磁共振(EPR)测试技术调查了Dy在BaTiO3中的位占据倾向.结果表明:Dy倾向于占据Ba位优于Ti位;无论在Ba位还是Ti位占据的名义配比下,Dy都以少量Dy3+形式不可避免地进入BaTiO3中的另一位.x=0.01时,(Ba1-xDyx)TiO3和(Ba1-xDyx)Ti1-x/4O3陶瓷出现很强的g=1.974的Ba空位缺陷信号.Ba(Ti1-xDyx)O3陶瓷在x=0.01时有第二相Ba12Dy4.67Ti8O35析出并且出现一个较弱的g=2.002的Ti空位缺陷信号.(Ba1-xDyx)(Ti1-xDyx)O3陶瓷的固溶度大于x=0.03,在825 cm-1处有较强的拉曼电荷效应.  相似文献   

12.
The microstructure, dielectric properties and chemical state of Ti element on BaTi4O9 (f)/(0. 64 BaTi4O9-0. 36BaPr2Ti4O12 ) composites sample surface were characterized by X-ray diffraction (XRD) ,Transmission electron microscopy (TEM), LCR meter method and X-ray photoelectron spectroscopy (XPS).The results show that the system is composed of BaTi4O9 and BaPr2Ti4O12 two phases. Pr ions are distributed inthe BaTi4O9 grains and the segregation of Pr ions was observed on the grain boundaries of BaTi4O9/BaTi4O9.The content of Ti3 + and Ti2+ decrease in the BPT system composites due to the addition of BaTi4O9 fibers,which improved the dielectric properties of the system. BPT10 sample with 10 % BaTi4O9 fibers, has the bestdielectric properties in the system, its εr =64,tan δ = 1×10-4(at 1 MHz) , and it may be a potential candi-date for microwave dielectric ceramics.  相似文献   

13.
以BaCO3和TiO2为原料,采用固相反应法制备了钇(Y)掺杂的BaTiO3半导体陶瓷。并且结合XRD分析的结果,讨论了不同煅烧温度对陶瓷半导化的影响和样品的室温电阻率与施主Y的摩尔分数的关系;提出了煅烧温度的选取原则。研究结果表明,随着煅烧温度的升高,材料半导化程度先增加后减小,最佳的煅烧温度为1 200℃。随着Y摩尔分数的增加室温电阻率先增加后减小。当Y摩尔分数为0.6%时在1 200℃煅烧2h获得的材料的室温电阻率最低为31.80Ω·cm。  相似文献   

14.
采用固相反应法制备了Co2O3掺杂的Ba(Ti0.91Zr0.09)O3陶瓷,研究了Co2O3掺杂对Ba(Ti0.91Zr0.09)O3陶瓷相结构与介电性能的影响。结果表明,掺杂Co2O3后Ba(Ti0.91Zr0.09)O3陶瓷产生了第二相,随着Co2O3施主掺杂量的增加,抑制了第二相的产生,掺杂后的Ba(Ti0.91Zr0.09)O3陶瓷是具有弥散相变的铁电体,弥散程度随掺杂量的增加而增加,x=0.01时,矫顽场最大。  相似文献   

15.
采用固相反应法制备了( Mg0.95-X Ca0.05 SbX) TiO3微波介质陶瓷.研究了Sb掺杂对0.95MgTiO3-0.05 CaTiO3 (95MCT)陶瓷性能的影响.结果表明:Sb掺杂95MCT陶瓷的主晶相为MgTiO3和CaTiO3两相,有中间相MgTi2O5的产生;Sb掺杂能有效的降低95 MCT陶瓷...  相似文献   

16.
采用固相反应的冷压陶瓷制备工艺,制备出以钛酸钡为基的双稀土掺杂大型Φ60和小型Φ10陶瓷材料BPTC.通过XRD和介电温谱测试,研究了稀土元素在钛酸钡晶格双位并入、晶体结构和介电性能.采用静电计对稀土掺杂钛酸钡基大型陶瓷材料的体电阻率进行了研究测量,侧面反应出了小型陶瓷片的高绝缘性能.  相似文献   

17.
The effects of different firing temperatures on the stability of perovskite phase, grain size, and dielectric properties were investigated by XRD, TEM, SEM and dielectric measurements. The dielectric ceramics of Pb(Mg1/3Nb2/3)O3-PbTiO3-BaTiO3 system were obtained by chemical coprecipitation in water. The ceramics have higher dielectric constant (7003-9714), lower firing temperature(950-1150℃), quite uniform microstructure with grain size less than 2.5 mp, and lower temperature coefficients of capacitance. As a re-sult, it was confirmed that the simple and low cost chemical route used namely coprecipitation in water is a desired method for preparinghigh property dielectfic materials applicable to multilayer capacitors.  相似文献   

18.
采用传统固相法制备(Ba 0.8Sr 0.2) 1-1.5x BixTiO3 (x= 0.02,0.05,0.15,缩写为BSBT)陶瓷.在空气条件下1 473 K 保温2 h退火制得,并对陶瓷样品的结构、微观形貌和介电性能进行了测试.其中,在介电研究中不仅出现了弥散的相变,并且在高温区域观察到了弥散型的介电异常.根据居里-外斯定律的拟合结果,在样品x=0.05的BSBT陶瓷样品中出现相对较强的一个弥散相变.此外,通过阻抗分析,不仅表征了BSBT陶瓷的晶界电阻,还由此算出陶瓷样品的活化能和电导活化能.极化原理表明BSBT陶瓷的高温弛豫与氧空位引起离子的跳跃有关.而对于样品的高温介电异常,此处认为是一种介电弛豫行为,主要由弛豫强度变化所致.  相似文献   

19.
分别以Y(NO3)3和氨水、NH4Al(SO4)2.12H2O和碳酸氢铵为原料,采用化学沉淀法与碳酸铝铵分解法合成了高活性、平均粒径分别为39 nm和95 nm的Y2O3和Al2O3超细粉体.以Y2O3,Al2O3超细粉和商用Nd2O3粉体为原料,采用固相反应法,经1 700℃真空烧结15 h,制备了Nd:YAG透明陶瓷.含x(Nd)=1%的YAG陶瓷在可见光区最大透光率约为53%.对YAG陶瓷的烧结过程和显微组织研究表明,Nd的引入明显地促进了陶瓷的烧结,同时晶粒得到细化.  相似文献   

20.
The high-dense nanocrystalline BaTiO3(BT)ceramics with grain size smaller than 100nm have been successfully prepared by the two step sintering and the spark plasma sintering(SPS)process.The successive transitions in nanograin BT ceramics from rhombohedral to orthorhombic,tetragonal and cubic transitions,similar to those in coarse BT ceramics,were revealed by in-situ temperature dependent Raman spectrum.The multiphase coexistence and the diffused phase transition character were demonstrated in the 8nm nanocr...  相似文献   

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