New low-stress PECVD poly-SiGe Layers for MEMS

Thick poly-SiGe layers, deposited by plasma-enhanced chemical vapor deposition (PECVD), are very promising structural layers for use in microaccelerometers, microgyroscopes or for thin-film encapsulation, especially for applications where the thermal budget is limited. In this work it is shown for the first time that these layers are an attractive alternative to low-pressure CVD (LPCVD) poly-Si or poly-SiGe because of their high growth rate (100-200 nm/min) and low deposition temperature (520/spl deg/C-590/spl deg/C). The combination of both of these features is impossible to achieve with either LPCVD SiGe (2-30 nm/min growth rate) or LPCVD poly-Si (annealing temperature higher than 900/spl deg/C to achieve structural layer having low tensile stress). Additional advantages are that no nucleation layer is needed (deposition directly on SiO/sub 2/ is possible) and that the as-deposited layers are polycrystalline. No stress or dopant activation anneal of the structural layer is needed since in situ phosphorus doping gives an as-deposited tensile stress down to 20 MPa, and a resistivity of 10 m/spl Omega/-cm to 30 m/spl Omega/-cm. With in situ boron doping, resistivities down to 0.6 m/spl Omega/-cm are possible. The use of these films as an encapsulation layer above an accelerometer is shown.     

A novel capacitive pressure sensor based on sandwich structures

This paper presents a sandwich structure for a capacitive pressure sensor. The sensor was fabricated by a simple three-mask process and sealed in vacuum by anodic bonding. The sensor, which utilizes a combined SiO/sub 2//Si/sub 3/N/sub 4/ layers as the elastic dielectric layers, exhibits high sensitivity. Mechanical characteristics of the sensor are theoretically analyzed based on a composite membrane theory and evaluated by use of finite element analysis (FEA). Square membrane sensors with side lengths of 800 /spl mu/m, 1000 /spl mu/m, 1200 /spl mu/m, and 1500 /spl mu/m were fabricated, providing a measured sensitivity of 0.08 pF/kPa, 0.12 pF/kPa, 0.15 pF/kPa, and 0.2 pF/kPa, respectively. The nonlinearity of the sensor is less than 1.2% over a dynamic range 80-106 kPa and the maximum hysteresis is about 3.3% to the full scale capacitance change. The TCO at 101 kPa is 1923 ppm//spl deg/C. All the electrodes of the sensor are leaded from the top side of the chip. Residual pressure in the sealed cavity at room temperature is evaluated by a pressure scanning test, indicating about 8 kPa. Comparison of experimental results with theoretical analysis shows that change of capacitance for the sandwich structure under pressure is mainly due to variation of the dielectric constant while geometric variations such as the area change of electrodes and the thickness change of dielectric layers is about two orders less than the variation of the dielectric constant. Sensitivity enhancements for the sensor are qualitatively discussed based on the physical effects of strained dielectrics, including electrostriction and flexoelectricity. [1551].     

Fabrication and measured performance of a first-generation microthermoelectric cooler

The measured performance of a column-type microthermoelectric cooler, fabricated using vapor-deposited thermoelectric films and patterned using photolithography processes, is reported. The columns, made of p-type Sb/sub 2/Te/sub 3/ and n-type Bi/sub 2/Te/sub 3/ with an average thickness of 4.5 /spl mu/m, are connected using Cr/Au/Ti/Pt layers at the hot junctions, and Cr/Au layers at the cold junctions. The measured Seebeck coefficient and electrical resistivity of the thermoelectric films, which were deposited with a substrate temperature of 130/spl deg/C, are -74 /spl mu/V/K and 3.6/spl times/10/sup -5/ /spl Omega/-m (n-type, power factor of 0.15 mW/K/sup 2/-m), and 97 /spl mu/V/K and 3.1/spl times/10/sup -5/ /spl Omega/-m (p-type, power factor of 0.30 mW/K/sup 2/-m). The cooling performance of devices with 60 thermoelectric pairs and a column width of 40 /spl mu/m is evaluated under a minimal cooling load (thermobuoyant surface convection and surface radiation). The average cooling achieved is about 1 K. Fabrication challenges include the reduction of the column width, implementation of higher substrate temperatures for optimum thermoelectric properties, and improvements of the top connector patterning and deposition.     

VHF single crystal silicon capacitive elliptic bulk-mode disk resonators-part II: implementation and characterization

This work, the second of two parts, reports on the implementation and characterization of high-quality factor (Q) side-supported single crystal silicon (SCS) disk resonators. The resonators are fabricated on SOI substrates using a HARPSS-based fabrication process and are 3 to 18 /spl mu/m thick. They consist of a single crystal silicon resonant disk structure and trench-refilled polysilicon drive and sense electrodes. The fabricated resonators have self-aligned, ultra-narrow capacitive gaps in the order of 100 nm. Quality factors of up to 46 000 in 100 mTorr vacuum and 26000 at atmospheric pressure are exhibited by 18 /spl mu/m thick SCS disk resonators of 30 /spl mu/m in diameter, operating in their elliptical bulk-mode at /spl sim/150 MHz. Motional resistance as low as 43.3 k/spl Omega/ was measured for an 18-/spl mu/m-thick resonator with 160 nm capacitive gaps at 149.3 MHz. The measured electrostatic frequency tuning of a 3-/spl mu/m-thick device with 120 nm capacitive gaps shows a tuning slope of -2.6 ppm/V. The temperature coefficient of frequency for this resonator is also measured to be -26 ppm//spl deg/C in the temperature range from 20 to 150/spl deg/C. The measurement results coincide with the electromechanical modeling presented in Part I.     

High-performance temperature-programmed microfabricated gas chromatography columns

This paper reports the first development of high-performance, silicon-glass micro-gas chromatography (/spl mu/GC) columns having integrated heaters and temperature sensors for temperature programming, and integrated pressure sensors for flow control. These 3-m long, 150-/spl mu/m wide and 250-/spl mu/m deep columns, integrated on a 3.3 cm square die, were fabricated using a silicon-on-glass dissolved wafer process. Demonstrating the contributions to heat dissipation from conduction, convection, and radiation with and without packaging, it is shown that using a 7.5-mm high atmospheric pressure package reduces power consumption to about 650 mW at 100/spl deg/C, while vacuum packaging reduces the steady-state power requirements to less than 100 mW. Under vacuum conditions, 600 mW is needed for a temperature-programming rate of 40/spl deg/C/min. The 2300 ppm//spl deg/C TCR of the temperature sensors and the 50 fF/kPa sensitivity of the pressure sensors satisfy the requirements needed to achieve reproducible separations in a /spl mu/GC system. Using these columns, highly resolved 20-component separations were obtained with analysis times that are a factor of two faster than isothermal responses.     

Design, fabrication, and measurement of high-sensitivity piezoelectric microelectromechanical systems accelerometers

Microelectromechanical systems (MEMS) accelerometers based on piezoelectric lead zirconate titanate (PZT) thick films with trampoline or annular diaphragm structures were designed, fabricated by bulk micromachining, and tested. The designs provide good sensitivity along one axis, with low transverse sensitivity and good temperature stability. The thick PZT films (1.5-7 /spl mu/m) were deposited from an acetylacetonate modified sol-gel solution, using multiple spin coating, pyrolysis, and crystallization steps. The resulting films show good dielectric and piezoelectric properties, with P/sub r/ values >20 /spl mu/C/cm/sup 2/, /spl epsiv//sub r/>800, tan/spl delta/<3%, and |e/sub 31,f/| values >6.5 C/m/sup 2/. The proof mass fabrication, as well as the accelerometer beam definition step, was accomplished via deep reactive ion etching (DRIE) of the Si substrate. Measured sensitivities range from 0.77 to 7.6 pC/g for resonant frequencies ranging from 35.3 to 3.7 kHz. These accelerometers are being incorporated into packages including application specific integration circuit (ASIC) electronics and an RF telemetry system to facilitate wireless monitoring of industrial equipment.     

Integrated magnetic sensing of electrostatically actuated thin-film microbridges

The movement of electrostatically actuated microbridges is measured by sensing the field of a permanent magnet, deposited and patterned on top of the microbridge, with a spin valve magnetic sensor fabricated beside the bridge at the level of the substrate. The spin valve sensor is sensitive to the position of the magnet and thus to the position of the bridge. The thin-film microbridges are fabricated using thin-film technology and surface micromachining at low temperatures (/spl les/100/spl deg/C) on glass substrates. The bridges are electrostatically actuated by applying a voltage between the bridges and a gate counter electrode placed beneath them. The deflection of the bridge is at the same time characterized optically by focusing a laser on the structure and monitoring the position of the reflected beam with a photodetector. A comparison of the bridge position sensing using the optical and magnetic methods is made. The absolute movement of the structures is measured with a precision close to 0.1 /spl Aring/ using the integrated magnetic sensor. The deflection of the electrostatically actuated structures is studied as a function of the applied gate voltage and length of the bridges. The experimental results show qualitative agreement with an electromechanical model.     

Polycrystalline silicon-germanium films for integrated microsystems

Two approaches were demonstrated for fabricating microstructures after completion of CMOS circuits with aluminum metallization. The first approach employed n-type poly-Ge deposited at 400/spl deg/C as a structural material with an SiO/sub 2/ sacrificial layer and an HF release. The CMOS circuits were protected from the release etchant with an amorphous Si layer. Clamped-clamped lateral resonator test structures had quality factors in vacuum as high as /spl sim/30000. Following a 500/spl deg/C, 30 s RTA the poly-Ge stress was 200 MPa (tensile) and the resistivity was 5.3 m/spl Omega/-cm. In the second integration approach, p-type poly-Si/sub 0.35/Ge/sub 0.65/ deposited at 450/spl deg/C was the structural material with poly-Ge as the sacrificial material and H/sub 2/O/sub 2/ as the release etchant. The H/sub 2/O/sub 2/ did not significantly etch the p-type poly-SiGe structural layer and no protection of the underlying CMOS layers was needed. For the first time, the fabrication of LPCVD surface microstructures directly on top of standard electronics was demonstrated, providing dramatic reductions in both MEMS-CMOS interconnect parasitics and device area. A folded flexure lateral resonator had a quality factor in vacuum as high as /spl sim/15000. No stress or dopant-activation anneal was needed, since the in situ boron-doped poly-SiGe was found to have an as-deposited stress of only -10 MPa (compressive) and a resistivity of only 1.8 m/spl Omega/-cm.     

Characterization of selective polysilicon deposition for MEMS resonator tuning

Variations in micromachining processes cause submicron differences in the size of MEMS devices, which leads to frequency scatter in resonators. A new method of compensating for fabrication process variations is to add material to MEMS structures by the selective deposition of polysilicon. It is performed by electrically heating the MEMS in a 25/spl deg/C silane environment to activate the local decomposition of the gas. On a (1.0/spl times/1.5/spl times/100) /spl mu/m/sup 3/, clamped-clamped, polysilicon beam, at a power dissipation of 2.38 mW (peak temperature of 699/spl deg/C), a new layer of polysilicon (up to 1 /spl mu/m thick) was deposited in 10 min. The deposition rate was three times faster than conventional LPCVD rates for polysilicon. When selective polysilicon deposition (SPD) was applied to the frequency tuning of specially-designed, comb-drive resonators, a correlation was found between the change in resonant frequency and the length of the newly deposited material (the hotspot) on the resonator's suspension beams. A second correlation linked the length of the hotspot to the magnitude of the power fluctuation during the deposition trial. The mechanisms for changing resonant frequency by the SPD process include increasing mass and stiffness and altering residual stress. The effects of localized heating are presented. The experiments and simulations in this work yield guidelines for tuning resonators to a target frequency.     

An electrostatic, on/off microvalve designed for gas fuel delivery for the MIT microengine

The MIT micro-gas turbine engine requires an integrated fuel-metering device in order to implement on-board engine control. Graded fuel control can be achieved with an array of on/off valves. Each valve in the array must withstand an annealing temperature of 1100/spl deg/C during fabrication and open against 1 MPa of supply pressure at 400/spl deg/C operating temperature. This paper presents the design, fabrication and testing of an electrostatic, on/off silicon prototype valve. Tested with nitrogen at room temperature, the valve opened against a differential pressure of 0.9 MPa with 136 V and delivered a mass flow rate of 45 sccm (3.38 g/h). At 0.1y MPa upstream pressure, the helium leak-rate was measured to be 6/spl times/10/sup -3/ sccm. The valve showed no sign of failure after being continuously actuated for more than 10/sup 5/ cycles. The prototype valve will serve as the base-line design for the engine fuel valve array.     

IR uncooled bolometers based on amorphous Ge/sub x/Si/sub 1-x/O/sub y/ on silicon micromachined structures

In this work, we present the fabrication of bulk micromachined microbolometers made of amorphous germanium-silicon-oxygen compounds (Ge/sub x/Si/sub 1-x/O/sub y/) grown by reactive sputtering of a Ge/sub 0.85/Si/sub 0.15/ target. We describe the complete procedure for fabricating thermally isolated microbolometers consisting of Ge/sub x/Si/sub 1-x/O/sub y/ sensing films deposited on sputtered silicon dioxide membranes suspended over a silicon substrate. The electrical properties of the sensitive material are set by controlling the deposition parameters of the sputtering technique. Under optimum deposition conditions, Ge/sub x/Si/sub 1-x/O/sub y/ layers with moderate electrical resistivity and thermal coefficient at room temperature as high as -4.2% /spl middot/ K/sup -1/ can be obtained. Isolated structures measured at atmospheric pressure in air have a thermal conductance of 3 /spl times/ 10/sup -6/ W /spl middot/ K/sup -1/ and a thermal capacitance of 6/spl middot/10/sup -9/ W /spl middot/ s /spl middot/ K/sup -1/, yielding a response time of 1.8 ms. Bolometers with an IR responsivity of 380 V /spl middot/ W/sup -1/ and a NEDT of 3.85 K at 100 nA bias current are obtained. The use of sputtered films allows designing a fully low-temperature fabrication process, wholly compatible with silicon integrated circuit technologies.     

The critical role of environment in fatigue damage accumulation in deep-reactive ion-etched single-crystal silicon structural films

The importance of service environment to the fatigue resistance of n/sup +/-type, 10 /spl mu/m thick, deep-reactive ion-etched (DRIE) silicon structural films used in microelectromechanical systems (MEMS) was characterized by testing of electrostatically actuated resonators (natural frequency, f/sub 0/, /spl sim/40 kHz) in controlled atmospheres. Stress-life (S-N) fatigue tests conducted in 30/spl deg/C, 50% relative humidity (R.H.) air demonstrated the fatigue susceptibility of silicon films. Further characterization of the films in medium vacuum and 25% R.H. air at various stress amplitudes revealed that the rates of fatigue damage accumulation (measured via resonant frequency changes) are strongly sensitive to both stress amplitude and, more importantly, humidity. Scanning electron microscopy of high-cycle fatigue fracture surfaces (cycles to failure, N/sub f/>1/spl times/10/sup 9/) revealed clear failure origins that were not observed in short-life (N/sub f/<1/spl times/10/sup 4/) specimens. Reaction-layer and microcracking mechanisms for fatigue of silicon films are discussed in light of this empirical evidence for the critical role of service environment during damage accumulation under cyclic loading conditions.     

Scanning micromirrors fabricated by an SOI/SOI wafer-bonding process

MEMS scanning micromirrors have been proposed to steer a modulated laser beam in order to establish secure optical links between rapidly moving platforms. An SOI/SOI wafer-bonding process has been developed to fabricate scanning micromirrors using lateral actuation. The process is an extension of established SOI technology and can be used to fabricate stacked high-aspect-ratio structures with well-controlled thicknesses. Fabricated one-axis micromirrors scan up to 21.8/spl deg/ optically under a dc actuation voltage of 75.0 V, and have a resonant frequency of 3.6 kHz. Fabricated two-axis micromirrors scan up to 15.9/spl deg/ optically on the inner axis at 71.8 V and 13.2/spl deg/ on the outer axis at 71.2 V. The micromirrors are observed to be quite durable and resistant to shocks. Torsional beams with T-shaped cross sections are introduced to replace rectangular torsional beams in two-axis MEMS micromirrors, in order to reduce the cross-coupling between the two axial rotations. Fabricated bidirectional two-axis micromirrors scan up to /spl plusmn/7/spl deg/ on the outer-axis and from -3/spl deg/ to 7/spl deg/ on the inner-axis under dc actuation.     

Silicon-carbide microfabrication by silicon lost molding for glass-press molds

This paper describes two silicon carbide (SiC) microfabrication processes for SiC glass-press molds. One is silicon lost molding combined with SiC chemical-vapor deposition (CVD) and SiC reaction sintering (RS). The other is silicon lost molding combined with SiC CVD and SiC solid-state reaction bonding (SSRB). In both of these processes, an original pattern on a silicon substrate is transferred to a CVD SiC film, and then the film is backed by bulk SiC to obtain rigidity and robustness against pressing force. Finally, the silicon substrate is etched away to release a SiC mold. In the process using SiC CVD and RS, an original pattern on a silicon substrate was transferred to a SiC mold, but the surface roughness of the SiC mold was 0.05-0.08 /spl mu/m Ra, and worse than required by the glass-press mold. This was caused by the transformation of amorphous SiC to polycrystalline SiC in RS, which was confirmed by the X-ray diffraction (XRD) data of the CVD SiC film before and after RS. In the process using SiC CVD and SSRB, the surface of the SiC mold was smooth (0.004-0.008 /spl mu/m Ra) without the crystallization of the amorphous CVD SiC film. The SiC mold was pressed to Pyrex glass to demonstrate its high-temperature strength. The Pyrex glass was deformed by the SiC mold at 850 /spl deg/C without a void, and no significant deformation of the SiC mold was observed.     

Three-dimensional thin-film Li-ion microbatteries for autonomous MEMS

Autonomous MEMS require similarly miniaturized power sources. In this paper, we present the first working three-dimensional (3-D) rechargeable Li-ion thin-film microbattery technology that is compatible with MEMS requirements. The technology has been developed, and full 3-D cells have been manufactured on both glass and silicon substrates. Our 3-D microbatteries have a sandwich-like structure of conformal thin-film electrodes, electrolyte and current collectors. The films are deposited sequentially on all available surfaces of a perforated substrate (e.g., silicon or a glass microchannel plate or "MCP") using wet chemistry. The substrate has thousands of high-aspect ratio holes per square cm, thereby providing more than an order of magnitude increase in surface area per given footprint (original 2-D substrate area). The full 3-D cell consists of a Ni cathode current collector, a MoO/sub y/S/sub z/ cathode, a hybrid polymer electrolyte (HPE) and a lithiated graphite anode that also serves as anode current collector. One 3-D cell with a roughly 1-/spl mu/m-thick cathode ran at C/10 to 2C charge/discharge rates and room temperature for 200 cycles with 0.2% per cycle capacity loss and about 100% Faradaic efficiency. The cell exhibited a capacity of 2 mAh/cm/sup 2/, about 30times higher than the capacity of a similarly built planar (2-D) cell with the same footprint and same cathode thickness.     

A wireless microsystem for the remote sensing of pressure, temperature, and relative humidity

This work presents a microsystem that utilizes inductive power and data transfer through a backscatter-modulated carrier and a transducer interface that monitors its environment through embedded capacitive transducers. Formed on a single chip, transducers for temperature, pressure, and relative humidity are realized using a silicon-on-glass process that combines anodic bonding and a silicon-gold eutectic to realize vacuum-sealed cavities with low-impedance (6 /spl Omega/) electrical feedthroughs. Temperature is sensed capacitively using a row of Si/Au bimorph beams that produce a sensitivity of 15 fF//spl deg/C from 20 to 100/spl deg/C. The absolute pressure sensors have a sensitivity of 15 fF/torr and a range from 500 to 1200 torr, while the relative humidity sensor responds with 39 fF/%RH from 20 to 95%RH. A relaxation oscillator implements low-power capacitance-to-frequency conversion on a second chip with a sensitivity of 750 Hz/pF at 10 kHz, forming a 341 /spl mu/W transducer interface. The system is remotely powered by a 3-MHz carrier and has a volume of 32 mm/sup 3/, including the hybrid antenna wound around the perimeter of the system.     

A low-temperature thin-film electroplated metal vacuum package

This paper presents a packaging technology that employs an electroplated nickel film to vacuum seal a MEMS structure at the wafer level. The package is fabricated in a low-temperature (<250/spl deg/C) 3-mask process by electroplating a 40-/spl mu/m-thick nickel film over an 8-/spl mu/m sacrificial photoresist that is removed prior to package sealing. A large fluidic access port enables an 800/spl times/800 /spl mu/m package to be released in less than three hours. MEMS device release is performed after the formation of the first level package. The maximum fabrication temperature of 250/spl deg/C represents the lowest temperature ever reported for thin film packages (previous low /spl sim/400/spl deg/C). Implementation of electrical feedthroughs in this process requires no planarization. Several mechanisms, based upon localized melting and Pb/Sn solder bumping, for sealing low fluidic resistance feedthroughs have been investigated. This package has been fabricated with an integrated Pirani gauge to further characterize the different sealing technologies. These gauges have been used to establish the hermeticity of the different sealing technologies and have measured a sealing pressure of /spl sim/1.5 torr. Short-term (/spl sim/several weeks) reliability data is also presented.     

A hybrid PZT-silicon microvalve

A low-voltage, low-power microvalve for compact battery-powered portable microfluidic platforms is designed, fabricated and experimentally characterized. The microvalve employs laser-machined piezoelectric unimorphs mechanically linked to surface micromachined nickel structures anchored on corrugated Si/sub x/N/sub y/-Parylene composite membrane tethers. The Parylene layer also serves as a compliant sealing layer on the valve seat for reducing the leakage in the off state. A mechanical linking process to connect the bulk piezoelectric unimorphs to micromachined diaphragms in a self-aligned manner has been developed. The design enables large strokes (2.45 /spl mu/m) at low-actuation voltages (10 V) consuming a comparatively low switching energy (678 nJ). The dependence of the measured flow rates on the modulated clearance over the orifice was found to be in good agreement with the theory of laminar flow in the low (1-100) Reynolds number regime. The microvalve was experimentally characterized for both gas and liquid flows. For example, at 10 V unimorph actuation, a gas flow rate of 420 /spl mu/L/min at a differential pressure of 9.66 kPa was measured. The off-state leakage rate for 0 V actuation is estimated to be 10-20 /spl mu/L/min. Typical flow rates with pulse width modulated (PWM) actuation with 50% duty cycle at 20 V/sub pp/ (1 kHz) were measured to be 770 /spl mu/L/min at 6.9 kPa for gases and 2.77 /spl mu/L/min at 4.71 kPa for liquids.     

Weighted singular value distribution of RRI series applied to the characterization of heat intolerance in humans

A nonlinear scheme was used for the analysis of variability in the heart beat interval [R-R interval (RRI)] data to differentiate heat-intolerant humans from the heat tolerant. All subjects studied had previously suffered exertional heatstroke. Core temperature (T/sub re/) and electrocardiogram data from 11 heat-tolerant (HT) and 6 heat-intolerant (HIT) males were studied, the grouping being based on the distinguishing rate of rise in T/sub re/ versus time up to 39/spl deg/C during submaximal exercise. The RRI data were subjected to wavelet transformation and the transformed data were utilized to generate weighted singular value (WSV) distribution profiles. The normalized WSV profiles merged together for the HT subjects, but remained widely dispersed for the HIT subjects. From WSV profiles of five HT subjects a standard WSV template (w/sub t/) was constructed and with respect to w/sub t/ the cumulative square error (/spl epsiv/) for individual WSV profiles for a cohort of six (additional) HT and six HIT subjects was analyzed. In terms of /spl epsiv/, HT and HIT groups could be differentiated with the sensitivity and the specificity exceeding 83%. The strength of the WSV profiles in characterizing processes is also demonstrated using synthetic data.     

Effect of electrode geometry on performance of an EHD thin-film evaporator

This paper presents details of an optimization process of electrode geometry for an electrohydrodynamically (EHD) driven thin-film evaporator. The operation principle of the device is based on the action of the EHD force on the molecules of a dielectric liquid in a highly convergent electric field. The force starts at the end of a pair of electrodes, where the electric field changes from zero far from the electrodes to a finite value in between the electrodes. This force drives the liquid up into the spacing between the electrodes. The electrodes in this study were deposited thinly on a SiO/sub 2//Si wafer, so the liquid could be held within micrometers of thickness over the surface. Since the performance of the device in removing heat from the surface is a function of its pumping head and consequently its electrode geometry, the performances of different electrodes were evaluated by testing twelve sets of electrode pairs with different geometries. Then the optimum electrode design was incorporated into the design of a large size (32/spl times/32 mm/sup 2/) EHD thin-film evaporator. The device was fabricated, and its pumping and heat transfer performances were tested. A pumping head equal to the full height of the electrodes and a heat transfer coefficient of 1.9 W/cm/sup 2/./spl deg/C was achieved using HFE-7100 liquid.