一种实现中红外非对称传输的手征超表面设计

为了研究手征超表面在中红外波段的非对称传输特性,设计了一种基于L型结构的手征超表面单元。利用CST电磁软件进行仿真分析,结果表明在68.92~88.68 THz范围内非对称传输参数大于0.8,在73.25 THz处非对称传输参数达到极值为0.88,由此可知该结构在中红外波段具有良好的非对称传输特性;通过分析表面电流分布和透射场相位分布,阐明了该手征超表面的极化选择性反射和交叉极化透射机理;对单元结构手征强弱和非对称传输特性的关系进行了讨论,并研究了介质层、金属层的厚度以及电磁波入射角度对非对称传输特性的影响。     

各向异性超材料中太赫兹波的偏振转换

各向异性超材料可以控制太赫兹波的偏振态,实现入射太赫兹波的偏振转换。为了获得非手性各向异性超材料的透射响应与本征偏振复透射系数的关系及其入射偏振依赖性,在太赫兹时域光谱系统中测量了等臂长L形结构超材料在不同偏振角下的正入射透射谱,获得并分析了透射太赫兹波的偏振转换率和偏振态,所得结果与基于琼斯矩阵和坐标变换计算的结果一致。在0.7 THz~1.3 THz频率范围内可实现约20%的偏振态能量转换效率。在L结构和双L结构的偏振转换透射谱中分别观察到了宽带响应和多频共振响应,表明结构改变对太赫兹波透过特性的敏感性和可操控性。所得到的结果可用于太赫兹功能器件的设计、表征和优化。     

基于频率选择表面的太赫兹双通带滤波器研究

目前双频带频率选择表面(Frequency Selective Surface,FSS)结构存在的通带选频性能有限。为了提高太赫兹频段通带滤波器件的性能,设计了一种基于频率选择表面的太赫兹双通带滤波器。该器件主要由三层正四边形的同心金属铜环组成,中间加载了介质衬底。金属层与衬底的厚度均为0.04λ,其中λ为低频波段的波长,单元尺寸为0.15λ。根据等效电路法分析了该结构产生双频通带的原因,并对设计的结构优化作了进一步的讨论。通过改变等效电路元件的参数等价地调整了原始结构的几何参数。仿真结果与理论计算基本吻合,优化后的器件可在2.74 THz和8.17 THz两个中心频率处实现通带滤波。低频处的-1 dB通带范围为2.24～3.25 THz,插入损耗为-0.05 dB;高频处的-1 dB通带范围为7.63～8.71 THz,插入损耗为-0.12 dB。滤波特性曲线的陡峭度好且相对带宽均超过10%。该结构尺寸小,频率选择性好,角度稳定性高,可用于太赫兹频段的宽频带滤波,对未来的太赫兹通信具有重要的应用价值。     

基于石墨烯的网格型宽带可调谐太赫兹吸波器

该文提出了一种基于石墨烯的宽带可调谐吸波器,该器件是由网格型石墨烯结构、介质层及金属地板组成。采用CST软件对器件的性能进行了仿真分析,仿真结果显示,当石墨烯费米能级时,在2.97~3.74 THz内,器件对电磁波吸收率达90%。另一方面,器件的工作频率可通过改变石墨烯的费米能级进行动态调控。当石墨烯的费米能级从0.3 eV变到0.8 eV时,器件的工作频率在2.60~4.55 THz内调谐,相对调谐带宽为56%,且在整个调谐频率范围内,器件对电磁波的吸收率始终高于90%。此外,器件的工作性能对入射电磁波的偏振方向和入射角不敏感,因此,该器件在太赫兹成像、太赫兹检测和隐身技术等领域有潜在的应用价值。     

宽带调谐光子晶体光纤多功能太赫兹器件

基于液晶分子的指向矢随外加电场改变而变化的特点,设计了一种新型电场调制液晶太赫兹器件。利用全矢量平面波展开法和光束传播法分别研究了光子晶体光纤的带隙位置和传输光谱的电场分布。同时,利用时域有限差分法计算了液晶分子指向矢随外电场的变化关系。结果显示该器件不仅可以在0.55 THz的宽带范围内实现开关功能,且具有耦合损耗低、消光比高等优点,消光比为30.78 dB。当太赫兹波的入射频率满足光纤的单偏振条件时,该器件还具有偏振控制功能,能够改变传输模式的偏振状态。     

太赫兹矩形波导与共面波导耦合结构设计

太赫兹（THz）波位于微波与红外光波之间,现有微波和光波段波导技术应用正在向THz波段拓展。但是,由于水汽对THz波的强吸收及制造工艺等原因,THz器件主要是平面结构,而THz源及其传输需要用矩形波导。因此,矩形波导与共面波导之间的转换结构成为决定元件和系统性能的关键部分。该设计利用脊波导进行阻抗匹配及电磁场模式转换,实现THz波矩形波导到共面波导的高效率耦合。结果表明,在0.2~0.4 THz频段内,该转换结构的传输系数(S₂₁)高于?3 dB,可以对THz电磁场进行高效率转换。该结果可用于太赫兹分子探测、太赫兹通信等领域,为0.2 THz以上太赫兹的模式转换提供了一种可行方案。     

基于石墨烯的太赫兹透明吸波器设计

透明太赫兹吸波器既可在太赫兹波段实现吸波功能,又对可见光透明,隐蔽性高,因此其在电磁隐形等领域具有广泛应用。文中设计了一种基于石墨烯的太赫兹双频吸波器,它由方形加枝节的石墨烯上层宽带吸波结构和石墨烯-ITO 嵌套形下层窄带吸收结构构成,实现了独立可调的双频吸波功能。经仿真调试,该吸波器能够通过改变石墨烯费米能,分别在1.98~3.64 THz 范围内调节实现90%以上宽频带吸收率和在4.6~4.9 THz 范围内调节实现96%以上吸收率。经验证,该吸波器具有极化不敏感、宽入射范围等优点。     

低损耗传输太赫兹波的Topas多孔纤维设计

以新型聚合物材料Topas环烯烃共聚物（COC）为基质,设计了一种能够低损耗传输太赫兹波的多孔纤维。应用全矢量有限元方法对传输特性的研究结果表明,该Topas多孔纤维在太赫兹波段具有宽带低损耗、低色散的特性:0.4~1.5 THz范围内的损耗小于0.2 cm-1;0.48~1.5 THz范围内的色散为1.80.3 psTHz-1cm-1。所设计的多孔纤维兼顾了结构简单、易于制备的特点。研究结论为Topas太赫兹波导的制备提供了理论指导。     

基于超材料的太赫兹1/4波片设计及特性分析

提出了一种基于超材料的透射式太赫兹1/4波片,将传统的开环谐振型结构改进为“叉指”型结构,实现了线极化波向圆极化波的有效转换。测试表明,在0.818~0.973THz内,透射波的轴比小于3dB,椭圆度χ＞0.81,器件将线极化波转换为圆极化波的效率为50%~75%。与现有的太赫兹1/4波片相比,该器件极化转换效率高、结构简单,仅由一层介质层和两层金属层组成。所提出的太赫兹1/4波片在太赫兹无线通信、太赫兹成像等领域具有重要的应用前景。     

光子晶体直接耦合结构双波长THz波调制器

THz波调制器是太赫兹波通信系统中的关键器件之一。提出了一种基于复式晶格光子晶体直接耦合结构的双波长THz波调制器。该调制器通过在一个点缺陷中引入非线性材料GaAs(砷化镓),可实现仅通过一个点缺陷对双波长THz波的光控调制。仿真结果表明:当两个不同的THz波入射时,调制器插入损耗小、消光比高、调制速率快。与同类侧耦合结构调制器相比,该调制器具有更高的消光比。     

Spectrum manipulation of a dual-stop-band metamaterial terahertz filter based on unit cell dimension changes

We numerically and experimentally proposed a dual-stop-band terahertz filter based on standard microelectronic fabrication method. The stop bands locate at 0.32 THz and 1.02 THz with 3 dB bandwidths of 0.26 THz and 0.55 THz, respectively. The resonance characteristics of the proposed device were discussed with the help of surface current maps and field density maps extracted from computer simulation software to better understand the working principle of the proposed device. On top of that, a total of seven devices with different dimensions were fabricated to fully discuss the dimension effects on the resonant frequency shift and bandwidth changes. This fabrication process is applicable for related integrated metamaterial devices and provides essential experiment evidences for effective ways of manipulating the transmission spectrum of the proposed filter.     

Creation and optimization of vertical-cavity X-modulators

We have developed a photon conserving, reversible optoelectronic intensity modulator. The device works by using quantum wells in a slightly asymmetric InGaAs-AlGaAs QW Fabry-Perot cavity to direct an incident optical beam to transmit through the device or to be reflected from the device depending upon the state of the switching element. The first experimental device simultaneously switches reflectivity and transmission from 6% to 60% and 60% to 6%, respectively. We also examine the cavity design parameter space and effects of incident angle on device performance. Furthermore, experimental results from combinations of stacked devices are discussed. A theoretical analysis of the X-modulator design parameter space is given as is an analysis of the system response of our two element stacked devices. Finally, a thorough theoretical treatment of crossbar switches using symmetric X-modulators is provided     

A 2 kbit array of symmetric self-electrooptic effect devices

A 64×32 array of symmetric self-electrooptic effect devices, each of which can be operated as a memory element or logic gate, is discussed. The required optical switching energies of the devices were ~800 fJ and ~2.5 pJ at 6 and 15 V bias, respectively, and the fastest switching time measured was ~1 ns. Either state of the devices could be held with continuous or pulsed incident optical signals with an average optical incident power per input beam of ~200 nW or less than 1 mW for the entire array. Photocurrent and reflectivity were measured for all 2048 devices. Only one device failed to have the negative resistance required for bistability, and only nine of the devices fell outside a band of ±20% of the mean. Additionally, over 200 devices in the array were operated in parallel using low-power semiconductor laser diodes     

基于石墨烯超材料的三频段可调谐完美吸收器

为进一步降低太赫兹频率下高性能调控器件的结构复杂度,提出一种三频段可调谐超材料完美吸收器. 该吸收器由图案化的石墨烯层和经Si介质层隔开的Au接地平面组成,利用太赫兹下的石墨烯表面等离子体共振以及图案化石墨烯与电场耦合提供的电偶极子共振形成多个吸收峰. 数值仿真结果表明,在0.489 THz、1.492 THz和2.437 THz处实现了对入射波的共振吸收,各峰值处的幅值均大于99.9%. 由于吸收峰处的幅值可以通过外部施加的偏置电压改变石墨烯的费米能级进行控制,因而所提出的吸收器结构的工作状态可在反射器和吸收器之间灵活切换. 同时,通过对吸收器单元结构的对称设计实现了对极化角度的不敏感特性,且在宽入射角范围内仍能保持良好的吸收性能. 因此,所设计的基于石墨烯的太赫兹超材料功能器件在调制和传感方面具有巨大的潜力.     

Metasurface Patch for Wireless Power Transfer in Implantable Devices

Wireless power transfer (WPT) systems enable the long-term operation and miniaturization of implantable devices by eliminating the need for battery replacement and wired power supplies. Although wireless power transfer systems for implantable devices are extensively studied, their practical application is still challenging owing to the constraints and requirements of the human body, such as reflection loss owing to differences in the tissue dielectric properties, mm-sized devices, and electromagnetic (EM) wave attenuation of the tissue. Here, a phase-gradient metasurface patch is presented to achieve 5.8 GHz EM power focusing at a focal point of depth 10 mm in the tissue via EM wavefront modulation at the skin–air interface. The proposed metasurface patch is fabricated by arranging subwavelength-thickness (<λ/10) unit cell structures composed of four metallic layers separated by dielectric substrates that exhibit high-Q resonance properties and a sufficient phase modulation range with enhanced transmission. By applying the fabricated metasurface patch to a wireless power transfer system for implantable devices, it is experimentally confirmed that the transmission coefficient (S₂₁) is improved by 6.37 dB compared with that of a wireless power transfer system without the metasurface patch. Furthermore, it is confirmed that the transmission coefficient can be maintained for an incident angle variation up to 30° from the transmitter to the metasurface patch, resulting in a stable power delivery of the proposed wireless power transfer system.     

Optical effects based on intersub-band-transitions in quantum wells

Unipolar devices based on intersub-band-transition have been developed in the last decade [Appl. Phys. Lett. 65 (1994) 2901]. However, this technique will not be directed applicable for the longer wavelengths corresponding to Tetrahertz frequencies. In this work we analyze a THz device based on the intersub-band-transitions of an asymmetric double quantum well. We first study the intersub-band optical absorption in superlattice made of asymmetric double quantum wells tailored as a three level system. By applying an external electric field we obtain the Wannier-Stark ladder and can tune the transition energies between the sub-bands to reach the THz absorption between the two excited sub-bands. Although the dipole moments are big, the relative THz absorption to the other frequencies is small. However, reported lifetimes for this system encourage the possibility of getting population inversion, which is the main condition to design a laser. With this goal, it is presented a detailed study of the geometric design of the asymmetric double quantum well by performing an accurate calculation of the energies and wave functions, the dipole moments and the electron-LO-phonon interaction form factors, which are important ingredients of the scattering rates results. Furthermore, we analyze the role of electron-LO-phonon scattering in THz devices.     

Characterization of Sub-THz Photonic-Transmitters Based on GaAs–AlGaAs Uni-Traveling-Carrier Photodiodes and Substrate-Removed Broadband Antennas for Impulse-Radio Communication

A novel photonic transmitter for wireless terahertz (THz) impulse-radio (IR) communication is realized by monolithic integration of a GaAs-AlGaAs-based uni-traveling-carrier (UTC) photodiode with a substrate-removed broadband antenna. The device can radiate strong sub-THz pulses (20-mW peak-power) with a narrow pulsewidth (<2 ps) and wide bandwidth (100 ~ 250 GHz). The maximum average power emitted by our device, under the same THz time-domain spectroscopic setup, is around ten times higher than that of the low-temperature-grown GaAs-based photoconductive antenna, while with a much lower dc bias (9 versus 35 V). The bias-dependent peak output powers of our devices suggest their suitability for application as a data modulator/emitter for photonic THz IR communication.