共查询到20条相似文献,搜索用时 93 毫秒
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结合硅片低温键合和中等剂量的氢离子注入,用智能剥离技术成功地制备了φ76mm的SOI材料,用原子力显微镜(AFM)测得表面粗糙度约为7nm,比普通的抛光硅片约大一个数量级。SOI上层硅膜存在表面缺陷,包括未转移区和气泡等,这是由剥离前硅片键合界面存在的空洞引起。通过改进低温键合工艺,提高键合质量,可得到基本无宏观表面缺陷的SOI材料。 相似文献
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超净硅片表达化学清洗工艺的优化研究 总被引:5,自引:3,他引:2
本采用正交试验设计法优化硅片化学清洗工艺,由X光电子能谱(XPS)检测清洗后的硅表面沾污杂质,结果表明,硅表面上主要沾污杂质氧和碳的最低含量 1.6×10^13/和3.1×10^13/cm,均达到超净的水平。本还研究了I号和Ⅱ液对硅片表面沾污的影响 相似文献
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本文分析了硅/玻璃静电键合过程中硅表面SiO2钝化膜的作用.SiO2膜的存在使键合过程中的静电力减弱,键合工艺所选择的电压上限受SiO2膜击穿电压的控制,对于商用抛光硅片与玻璃,要完成良好的键合,一般SiO2厚度要小于0.5μm. 相似文献
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采用自组装(SA)技术制备了对甲苯基硫脲、对氯苯基脲和2,4,6-三溴苯基硫脲Au表面的自装单分子膜(SAMs)。在Au-溶液界面,硫脲S原子与Au-S键诱导吸附分子形成取向在序排列的单分子膜。用原子力显微镜(AFM)对单分子膜进行了直接观察,AFM所获得的结构信息与椭圆偏振测量、接触角测量和X-射线光电子能谱(XPS)分析结果一致。 相似文献
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报道了以正硅酸乙酯(TEOS)为源,采用等离子体增强化学汽相淀积(PECVD)技术在InP表面低温生长SiO2钝化膜。对SiO2/InP界面态进行了X射线光谱(XPS)分析和C-V特性研究。 相似文献
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直接光CVD类金刚石碳膜的初期成膜结构 总被引:2,自引:1,他引:1
以微波激励氙(Xe) 发射的真空紫外光(VUV) 作光源,乙炔(C2H2) 作反应气体,采用直接光化学汽相淀积(CVD) 工艺,在硅(Si) 、钼( Mo) 及玻璃衬底上,120 ℃的低温下进行了类金刚石碳(DLC) 膜的试生长。用X 射线光电子能谱(XPS) 、扫描电子显微镜(SEM) 等手段进行了初期成膜结构的测试分析。测试结果表明,在所有三种衬底上均能淀积生成DLC 膜。其中C1s 态原子的含量在69 .98 % ~74 .60 % 之间,相应的键合能为285 .0 ~285 .6 eV。淀积膜是以SP2 键结构为主的DLC膜。实验结果也表明,氧在成膜过程中是影响最大的因素。 相似文献
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清洗后硅片表面的电子结构 总被引:1,自引:0,他引:1
介绍了一种含表面活性剂和螯合剂的新型半导体清洗剂和清洗工艺。利用红外吸收谱、X射线光电子谱和原子力显微镜等 ,把它和标准 RCA清洗工艺的清洗效果做了比较。测试结果表明 ,经清洗过的硅片表面主要是由硅、氧和碳三种元素组成 ,它们分别以 Si-O键、C-O键和 Si-C键的形式存在。两种清洗技术都在硅片表面产生氧化硅层 ,在硅片表面都存在有机碳污染 ,但新型半导体清洗工艺产生的有机碳污染少于标准 RCA清洗。在对硅片表面的粗糙化影响方面 ,新型半导体清洗技术清洗明显优于标准 RCA清洗技术 相似文献
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Two inner salt carbocyanines were filmed chemically on the Si surface through Si-O-C bond.The structures were characterized by SERS and XPS.And the spectral response and surface photovoltage spectrum were measured.These results show that the Si wafer can be sensitized by dyes.and the filmed Si wafers have photovoltage effect. 相似文献
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The effect of low-temperature electron charge redistribution at the Si/SiO2 interface between the interphase states and the conduction band of an n-Si crystal on the temperature behavior of conductance, photovoltage, and photocurrent in Si barrier structures with edge surface electron channels was studied in the temperature range of 77–300 K. The dynamics of the channel-current response to the voltage changes in the dark and under illumination can be explained qualitatively by dispersive hopping transport of holes in SiO2, which induces electron transfer to, and accumulation at, the Si surface near the barrier contact. The leveling off of the photovoltage at low temperatures and the nonmonotonic temperature dependence of the photocurrent are attributed to the nonmonotonically increasing, localized hole density at the Si/SiO2 interface and the free electron density at the Si surface with decreasing temperature, which reflects changes in the valence of oxygen complexes. 相似文献
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采用电容耦合法,在18~300K 温度范围内测量了一系列 Ge_xSi_(1-x)/Si应变层多量子阱和 Ge/Si 超薄超晶格在不同温度下的红外光电压谱。实验结果表明,在长波段有强的光电压信号。文中还对 Ge_xSi_(1-x)/Si 量子阱和超晶格的能带排列和光伏效应作了讨论。 相似文献
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Yihui Zhao Pieter Westerik Rudi Santbergen Erwin Zoethout Han Gardeniers Anja Bieberle‐Hütter 《Advanced functional materials》2020,30(13)
The photoelectrochemical (PEC) activity of microstructured electrodes remains low despite the highly enlarged surface area and enhanced light harvesting. To obtain a deeper understanding of the effect of 3D geometry on the PEC performance, well‐defined WO3/n‐Si and WO3/pn‐Si micropillar arrays are fabricated and subjected to a quantitative analysis of the relationship between the geometry of the micropillars (length, pitch) and their PEC activity. For WO3/n‐Si micropillars, it is found that the photocurrent increases for WO3/n‐Si pillars, but not in proportion to the increase in surface area that results from increased pillar length or reduced pillar pitch. Optical simulations show that a reduced pillar pitch results in areas of low light intensity due to a shadowing effect. For WO3/pn‐Si micropillar photoelectrodes, the p–n junction enhances the photocurrent density up to a factor of 4 at low applied bias potential (0.8 V vs RHE) compared to the WO3/n‐Si. However, the enhancement in photocurrent density increases first and then decreases with reduced pillar pitch, which scales with the photovoltage generated by the p–n junction. This is related to an increased dead layer of the p–n junction Si surface, which results in a decreased photovoltage even though the total surface area increases. 相似文献
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测量了二氧化锡(SnO2)/多孔硅(PS)/硅(Si)的光电压谱,分析表明:在SnO2/PS/Si材料中存在着两个异质结;当样品吸附还原性气体时,其光电压明显下降。当样品在1%液化石油气的氛围时(相对于空气),光电压减少了16.4%-27.5%;在1%CO氛围时,减少了8.1%-19.4%;在1%H2氛围时,减少了12.1%-14.9%,因此SnO2/PS/Si可作为一种新的敏感元件。文中还对测量结果进行了讨论分析。 相似文献
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《半导体光电》1999,20(5):3
SnO2/PS/Si
heterojunction structure samples are fabricated.The photovoltage spectra of the samples
during prior-and post-adsorption of H2 or liquified petroleum at different
temperature are measured.In combination with the results of XPS measurement,analysis on
the variation mechanism of the photovoltage spectra is made. 相似文献
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Dawei Kang Jiming Bian Yongchang Sang Aimin Liu Jingchang Sun Jun Xuan 《Materials Science in Semiconductor Processing》2013,16(2):520-524
In this work, n-type ZnO nanorods (NRs) were fabricated on a p-type Si substrate to form a ZnO NRs/Si structure using a low-temperature wet chemical bath deposition method. Kelvin-probe-based surface photovoltage (KP-based SPV) technology was used to study the behavior of surface photogenerated charges for the as-grown heterostructure. In general, the KP-based SPV response range of the ZnO NRs/Si structure was significantly expanded compared with the bare Si substrate, due to the incorporation of ZnO NRs. Moreover, the SPV response amplitude for ZnO NRs/Si structure also depended on the length and diameter of the NRs, and the corresponding mechanism was elucidated in terms of O2 adsorption. The photovoltaic application of the ZnO NRs/Si based structure would benefit significantly from these achievements. 相似文献