In1-xGaxAsyP1-y/InP异质界面晶格失配对外延晶体质量的影响

用X-射线双晶衍射,双晶形貌术和光致发光方法综合研究了In1-xGaxAsyP1-y/InP异质界面晶格失配对LPE晶体质量的影响。实验表明,异质界面晶格失配是导致外延层中位错和缺陷增多,杂质凝聚和辐射复合深中心增多的重要因素。     

Growth, structural, spectral, mechanical and dielectric characterization of RbCl-doped l-alanine hydrogen chloride monohydrate single crystals

Pure (undoped) and RbCl-doped LAHC single crystals were grown successfully by the solution method with the slow evaporation technique at room temperature. The grown crystals were colourless and transparent. The solubility of the grown samples were found out at various temperatures. The lattice parameters of the grown crystals were determined by the single crystal X-ray diffraction technique and the diffracting planes were indentified by recording the powder X-ray diffraction pattern. UV-visible transmittance studies were carried out for the grown samples. Chemical analysis and atomic absorption studies indicate the presence of rubidium in the doped LAHC crystals. Nonlinear optical studies reveal that the SHG efficiency increases when the LAHC crystal is doped with rubidium chloride (RbCl). From microhardness studies, it is observed that the RbCl-doped LAHC crystal is harder than the pure sample. It is observed that the dielectric properties of the LAHC crystal are altered when it is doped with rubidium chloride.     

GaP layers grown on GaN with and without buffer layers

The growth of GaP layer on GaN with and without buffer layers by metal-organic chemical vapour deposition (MOCVD) has been studied. Results indicate that the GaP low temperature buffer layer can provide a high density of nucleation sites for high temperature (HT) GaP growth. These sites can promote the two-dimensional (2D) growth of HT GaP and reduce the surface roughness. A GaP single crystal layer grown at 680°C is obtained using a 40-nm thick GaP buffer layer. The full-width at half-maximum (FWHM) of the (111) plane of GaP layer, measured by DCXRD, is 560 arcsec. The GaP layer grown on GaN without low temperature GaP buffer layer shows a rougher surface. However, the FWHM of the (111) plane is 408 arcsec, which is the indication of better crystal quality for the GaP layer grown on GaN without a low temperature buffer layer. Because it provides less nucleation sites grown at high growth temperature, the three-dimensional (3D) growth is prolonged. The crystalline quality of GaP is lightly improved when the surface of GaN substrate is pretreated by PH3 , while it turned to be polycrystalline when the substrate is pretreated by TEGa.     

Lasing characteristics and growth of CdS epitaxial thin-films excited by second harmonic Nd: YAG laser radiation at 473 nm

The first experimental study on CdS epitaxial thin-film lasers with ZnS substrates is reported. For the first time single crystal layers of CdS have been grown on the (111) faces of ZnS substrate by the hydrogen transport method. Laser emission at 491.8 nm has been observed from these layers cooled near liquid-nitrogen temperature. Optical pumping is performed by the second harmonic of a Q-switched Nd: YAG laser operated at 473 nm, the energy of which exceeds slightly the band-gap energy of the cooled epitaxial CdS layer. The measured optical gain for these CdS thin-films compared with that for platelet CdS single crystals reveals that the optical confinement inside the epitaxial layer increases the optical gain by a factor of about two.     

Enhancement of second harmonic generation efficiency: Cs(I)-doped tris(thiourea)zinc(II) sulphate crystals

The effect of dopant cesium (Cs(I)) over a concentration range from 1 to 10 mol% on the growth process, morphology, thermal and optical properties of tri(thiourea)zinc(II) sulfate (ZTS) single crystals grown by slow evaporation solution growth technique has been investigated. Incorporation of Cs(I) into the crystal lattice was well confirmed by energy dispersive X-ray spectroscopy (EDS). The lattice parameters of the as-grown crystals were obtained by single crystal X-ray diffraction analysis. The reduction in the intensities observed in powder X-ray diffraction patterns of doped specimen and slight shifts in vibrational frequencies in fourier transform infrared spectra (FT-IR) indicate the lattice stress as a result of doping. Thermal studies reveal the purity of the material and no decomposition is observed up to the melting point. High transmittance is observed in the visible region and the cut-off λ is ～280 nm. The surface morphology of the as-grown specimens was studied by scanning electron microscopy (SEM). The second harmonic generation (SHG) efficiency of the host crystal is enhanced greatly in the presence of high concentrations of the dopant.     

Growth and Crystallization Habit of a Novel Substrate Crystal LiGaO_2

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Multiphysical simulation analysis of the dislocation structure in germanium single crystals

To grow high-quality germanium crystals is one of the most important problems of growth industry. The dislocation density is an important parameter of the quality of single crystals. The dislocation densities in germanium crystals 100 mm in diameter, which have various shapes of the side surface and are grown by the Czochralski technique, are experimentally measured. The crystal growth is numerically simulated using heat-transfer and hydrodynamics models and the Alexander–Haasen dislocation model in terms of the CGSim software package. A comparison of the experimental and calculated dislocation densities shows that the dislocation model can be applied to study lattice defects in germanium crystals and to improve their quality.     

籽晶尺寸对宝石级金刚石单晶生长的影响

本文在国产六面顶压机上,在5.6 GPa, 1250—1450℃的高压高温条件下,分别选用边长0.8, 1.5和2.2 mm三种尺寸的籽晶,系统开展了Ib型宝石级金刚石单晶的生长研究.文中系统考察了籽晶尺寸对宝石级金刚石单晶生长的影响.首先,考察了籽晶尺寸变化对宝石级金刚石单晶裂晶问题带来的影响.研究得到了籽晶尺寸变大,裂晶出现概率增加的晶体生长规律.其次,在25 h的生长时间内,考察了上述三种尺寸籽晶生长金刚石单晶时,生长时间与单晶极限生长速度的关系.得到了选用大尺寸籽晶,可以提高优质单晶合成效率、降低合成成本的研究结论.借助扫描电子显微镜和光学显微镜,对三种尺寸籽晶生长金刚石单晶的表面形貌进行了标定.最后,傅里叶微区红外测试,对三种尺寸籽晶生长宝石级金刚石单晶的N杂质含量进行了表征.研究得到了选用大尺寸籽晶实现快速生长金刚石的同时,晶体的N杂质含量会随之升高的晶体生长规律.     

Studies on optical,mechanical, dielectric properties of bisthiourea nickel bromide NLO single crystal

Bisthiourea nickel bromide (BTNB) single crystal has been grown by solution growth technique at room temperature. The crystal structure and lattice parameters were determined for the grown crystal by single crystal X-ray diffraction studies. Optical constants like band gap, refractive index, reflectance, extinction coefficient and electric susceptibility were determined from UV–vis-NIR spectrum. Nonlinear optical property was discussed to confirm the SHG efficiency of the grown crystal. The mechanical strength of the grown crystal was analyzed using Vickers microhardness tester. The dielectric constant and dielectric loss of bisthiourea nickel bromide are measured in the frequency range of 50 Hz to 5 MHz at different temperatures. The ac conductivity studies were carried out on bisthiourea nickel bromide crystals. In order to investigate the growth mechanism and surface features, etching studies are carried out for the crystal. Photoconductivity studies were carried out on bisthiourea nickel bromide crystals.     

Anisotropic surface stress in polymer crystals: Example of polyethylene

The model of sharp folds at the surface of lamellar single crystals of polymers lead to high surface stress. The layer of folds is analogous to an epitaxial layer. Weak strains of the crystalline layers, when they are possible, relax these surface stresses. The principal properties of the most studied polymer, polyethylene, which are not observed in nonpolymeric materials, are shown to be deformation modes for relaxing the surface stress. From experimental observations it is inferred that in polyethylene, in the (110) and (100) fold domains, there are, respectively, an extension and a contraction along the growth faces. The observed twinning and martensitic modes appearing in polyethylene single crystals are the modes activated by the tensile surface stress due to the intrafold interaction. The idea proposed in this paper that surface stress activates some deformation modes can be easily extended to other lamellar polymer crystals.     

Effects of high-concentration phosphorus doping on crystal quality and lattice strain in SiGe HBTs

A high-concentration in-situ phosphorus-doping technique for silicon low-temperature epitaxial growth with Si₂H₆ has been developed. Growth temperature has an impact on the crystal quality and on lattice strain of phosphorus-doped silicon layers. Resistivity, micro-Raman spectroscopy, and high-resolution X-ray diffraction indicated that good crystal quality was achieved at a growth temperature of 525 °C. On the other hand, growth pressure has little influence on crystal quality or on lattice strain except for surface morphology. By optimizing epitaxial growth conditions, an extremely high concentration of phosphorous doping was achieved without a high-temperature activation annealing, and the resultant good crystal quality of the phosphorus-doped silicon layer gave a very low resistivity. Accordingly, the high-concentration in-situ phosphorus doping is a powerful technique to fabricate future ultra-high-speed SiGe HBTs.     

The growth and domain structure of YBa2Cu3Ox films on neodymium gallate substrates with a deviation of the normal to the surface from the [110] direction in NdGaO3

The growth, crystal structure, and electrophysical properties of YBa₂Cu₃O_x (YBCO) epitaxial films grown with and without a CeO₂ epitaxial sublayer on NdGaO₃ (NGO) substrates with the normal to the surface deviating from the [110] axis by 5° to 26.6° around the [001] axis are investigated. It is shown that the orientation of YBCO epitaxial films grown on such substrates is determined by the existence of symmetry-equivalent directions in the substrate and in the CeO₂ layer, as well as by the rate of film deposition. For a high deposition rate, YBCO films grow on the CeO₂ sublayer in the [001] orientation irrespective of the orientation of the substrate and the sublayer. It was found that when the angle of deviation of the substrate plane is from the (110) NGO plane, twinning of one or both twinning complexes in YBCO may be suppressed.     

基于MOCVD三步生长的GaAs/Si外延技术EI北大核心CSCD

在硅(Si)上外延生长高质量的砷化镓(GaAs)薄膜是实现硅基光源单片集成的关键因素。但是,Si材料与GaAs材料之间较大的晶格失配、热失配等问题对获得高质量的GaAs薄膜造成了严重影响。本文利用金属有机化学气相沉积(MOCVD)技术开展Si基GaAs生长研究。通过采用三步生长法,运用低温成核层、高温GaAs层与循环热退火等结合的方式,进一步降低Si基GaAs材料的表面粗糙度和穿透位错密度。并利用X射线衍射(XRD)ω-2θ扫描追踪采用不同方法生长的样品中残余应力的变化。最终,在GaAs低温成核层生长时间62 min(生长厚度约25 nm)时,采用三步生长、循环热退火等结合的方式获得GaAs(004)XRD摇摆曲线峰值半高宽(FWHM)为401″、缺陷密度为6.8×10^(7) cm^(-2)、5μm×5μm区域表面粗糙度为6.71 nm的GaAs外延材料,在材料中表现出张应力。     

The amount and location of amorphous component in polyethylene single crystals

Polyethylene single crystals from dilute solutions usually have a density ρ which is less than that of the ideal crystal lattice (ρ_c = 1.000 g/cm³). This density defect can be formally assigned to an “amorphous” component (1-α) = (ρ_c-ρ)/(ρ_c-ρa) and may be caused by vacancies in the crystal lattice and/or by the surface disorder connected with chain folds. The two-phase concept of single crystal structure assumes a very nearly ideal lattice core and two amorphous layers on the fold-containing surfaces. It is supported by density and heat content data of annealed samples, by small-angle X-ray scattering, by wide-line NMR investigations, and by the results of fuming nitric acid treatment.

The maximum thickness of the amorphous surface layer as a function of temperature may be estimated from the free energy requirement of such a layer. With regular chain folds one has a high concentration of gauche conformations yielding a high surface energy. The need for such a concentration disappears in the amorphous layer with loose loops. This gain in energy may be spent for surface melting. Still more important is the gain in entropy caused by the random distribution of loop lengths.     

Nanoscale observations of the epitaxial growth of hashemite on barite (0 0 1)

The heteroepitaxial growth of hashemite BaCrO₄ on barite BaSO₄(0 0 1) from supersaturated aqueous solutions was observed in situ using an atomic force microscope (AFM). It was shown that the first hashemite layer grows via two-dimensional nucleation easily forming a complete epitaxial layer, which is likely to have a low level of intrinsic stress. Two-dimensional nucleation of the second and subsequent layers proceeds with significantly lower rates, and growth occurs with lower step velocities. These layers seem to have significant level of intrinsic stress and tend to reduce it via the formation of free surface normal to the growth layer (holes in the layer, dendrite-like shape of nuclei and steps, preferable formation of nuclei at the step edges). As a result, the initially flat surface becomes rough. The process described corresponds to the Stranski-Krastanov epitaxial growth mode, which is well known for growth of semiconductor and metal films but not previously recognised for crystals grown from aqueous solutions.     

Studies on the growth,structural, optical,thermal and electrical properties of nonlinear optical cadmium mercury thiocyanate glycol monomethyl ether single crystal

Single crystals of cadmium mercury thiocyanate glycol monomethyl ether (CMTG) were grown from a mixed solvent of glycol monomethyl ether (GME):water (1:1) by slow evaporation method. The crystal structure and morphology were confirmed by single crystal X-ray diffraction analysis. Presence of functional groups and the coordination of glycol monomethyl ether (GME) and thiocyanate (SCN⁻) in the CMTG compound were confirmed by FT-IR analysis. Optical transparency of the grown crystal was studied by UV–Vis spectroscopy. Thermal stability and decomposition process were studied by means of TGA and DTA analysis. Dielectric measurement on CMTG single crystal was carried out for various frequency and temperatures. The surface studies by scanning electron microscopy reveals the formation of layer growth pattern indicative of 2D nucleation mechanism. From the second harmonic output power measurement by Kurtz powder method, it is observed that CMTG is a potential material for nonlinear optical applications among the bimetallic thiocyanate adducts series.     

Transition of 3D to 2D growth modes of InAs grown on GaAs

We report a method to grow thin strain-released InAs layer on GaAs (1 0 0) substrates by molecular beam epitaxy. We have shown that by controlling the growth parameters, a thin 2D InAs layer can be grown during initial stages, which eventually serves as a buffer layer to trap dislocations and epitaxial regrowth of InAs on this buffer results in high crystal quality. The size dependence of the InAs islands formed during initial stages with growth time has been studied by atomic force microscopy. With continuous short-time epitaxial growth during various stages, the InAs growth mode transfers from 3D to 2D. The introduction of dislocations into InAs epitaxial islands and their behavior during initial growth stage has been theoretically studied. The theoretical results are in remarkable agreement with the experimental results and shows that once the film is formed, the film strain is totally relaxed. The 200 nm thick InAs epilayer grown on this buffer shows a narrow X-ray diffraction peak. Such InAs strain-released buffer layer would be useful for regrowth of high In content based materials on top of it for electronics and optoelectronics device applications.     

Bi-Sr-Ca-Cu-O2212相超导单晶的定向生长

用定向凝固法已成功地生长出Bi-Sr-Ca-O2212相的超导大单晶,最大的单晶尺寸达到19×3×2mm³。定向生长的单晶(001)面平行于生长方向,[100]方向为单晶的定向生长方向。劳厄像表明大晶体确为单晶,其质量比其它方法生长的单晶要高。氧气中退火后的单晶电阻测量和交流磁化率测量表明,零电阻温度T_c(0)=81.5k。 关键词：     

Solid source MBE growth of quantum cascade lasers

High material quality is the basis of quantum cascade lasers (QCLs). Here we report the solid source molecular beam epitaxy (MBE) growth details of realizing high quality of InGaAs/InAlAs QCL structures. Accurate control of material compositions, layer thickness, doping profile, and interface smoothness can be realized by optimizing the growth conditions. Double crystal x-ray diffraction discloses that our grown QCL structures possess excellent periodicity and sharp interfaces. High quality laser wafers are grown in a single epitaxial run. Room temperature continuous-wave (cw) operation of QCLs is demonstrated.     

单晶金刚石边缘表面倾斜角度对同质外延生长的影响

利用微波等离子体化学气相沉积法,对单晶金刚石(100)晶面边缘进行精细切割抛光处理,形成偏离(100)晶面不同角度的倾斜面,在CH_4/H_2反应气体中进行同质外延生长,研究单晶金刚石边缘不同角度倾斜面对边缘金刚石外延生长的影响.实验结果表明,边缘倾斜面角度对边缘的单晶外延生长质量有影响,随着单晶金刚石边缘倾斜面角度的增大,边缘多晶金刚石数量先减少后增多,在倾斜角3.8°时边缘呈现完整的单晶外延生长特性.分析认为,边缘不同角度的倾斜面会改变周围电场强度和等离子体密度,导致到达衬底表面的含碳前驱物发生改变,倾斜面台阶表面的含碳前驱物浓度低于能形成层状台阶生长的临界浓度是减弱单晶金刚石生长过程中边缘效应的主要原因.