声表面波传感器Q值改善的理论分析与实验结果

报道了带变迹叉指换能器（IDT）和倾斜金属反射栅的高Q值Y型声表面波（SAW）质量沉积传感器。用P矩阵方法分析了三种不同传感器的通带纹波。分别在振荡和非振荡模式下比较了这些传感器的通带纹波和Q值。分析了获得高Q值的原因。理论和实验结果表明：均匀孔径无反射栅的传感器旁瓣抑制为10dB，振荡模式下其Q值为5289；通过孔径变迹设计，传感器的旁瓣抑制和Q值分别改善到25dB和8689；而对孔径变迹并加入倾斜反射栅的传感器，这两个参数提高到25dB和12477。非振荡模式下带反射栅的传感器比没有反射栅器件的通带纹波约低2dB。因此，变迹IDT和金属反射栅的应用是SAW质量传感器Q值的改善的两个重要因素。由于Q值改善，质量沉积灵敏度达到5.24GHz?cm2/g     

硅基AlN椭圆形IDT-SAW滤波器的设计

在已知的压电材料中,AlN薄膜的声表面波传播速度是最快的。本设计采用硅基AlN薄膜作为压电材料,利用变迹加权的方法来优化设计IDT,改进型δ函数模型为椭圆形结构IDT的建模工具。通过建模仿真并根据仿真结果设计SAW带通滤波器版图,在实验室制作了中心频率为300MHz,带内插损11dB的SAW带通滤波器样品,测试结果表明其仿真结果与试验结果一致性较好,具有实际应用意义     

用于气体传感器的声表面波振荡器频率稳定性分析

作为声表面波(SAW)气体传感器的关键元件,SAW振荡器的频率稳定性直接影响到传感器的灵敏度和检测下限.因此,提高SAW振荡器的频率稳定度是传感器研究的关键.这里在ST石英基片上研制了一种具有低插入损耗(在10dB以内)、单一模式控制的SAW双延迟线型振荡器,并分析了作为频控元件的延迟线Q值以及系统温度对振荡器频率稳定性的影响,提出了改善方法.另外还研究了高频SAW延迟线型振荡器的频率稳定性,研制了一种300MHz频段上的SAW双延迟线型振荡器,其频率稳定度达到了0.066×10-6量级.     

声表面波器件的反射特性及性能

为了准确分析反射型声表面波器件参数对其性能的影响,基于耦合模理论和P矩阵方法建立了器件的耦合模模型,分析得到器件的电反射特性即反射系数S11曲线,并在128°Y-X LiNbO3压电基片试制了频率为90 MHz的多种参数的器件,分析与测试结果表明:单个叉指换能器器件的S11中心频率为91.26 MHz,幅值为-20.58 dB,与理论分析结果91.44 MHz和-19.21 dB相近;带有反射栅的器件比单个叉指换能器件在中心频率处S11幅值增大约8.5 dB,谐振峰增多,时域曲线有明显的反射峰信号,验证了反射栅的反射特性;叉指换能器叉指对数减小使器件中心频率处的S11幅值减小,时域中的回波信号更尖锐,信噪比明显增大,表明对数较多的IDT具有较强的反射特性,对回波信号干扰较大,过小的叉指对数对器件声电转换效率影响很大,会使器件性能下降;较大的反射栅指条数对回波信号影响不大,但过小的指条数会降低反射栅反射系数,使得回波信号信噪比减小,纹波增多.     

声表面波质量传感器

在128°Y切割X传播方向上的LiNbO3基片上设计并研制了新型声表面波(SAW)质量传感器.它将输入叉指换能器激发的SAW中心对称分成两路并由各自的输出叉指换能器检测输出.由于环境温度对SAW延迟线振荡器的振荡频率影响较大,传感器的输出不仅决定于质量沉积区所沉积的质量,还决定于测量时所处的环境温度.为此,在SAW质量传感器测量时,同时监测传感器的输入信息质量沉积区的质量和环境温度及其输出频率信息,采用多传感器信息融合技术进行融合处理,质量传感器的温度灵敏度分别从α s0.2=0.8007/℃,α s0.6=0.2488/℃提高到α' s0.2=1.71×10-2/℃,α‘ s0.6=3.28×10-3/℃.     

基于超支化聚合物的声表面波化学毒剂传感器

基于声表面波（SAW）技术的化学毒剂传感器在检测下限、响应速度以及减小温度、湿度交叉敏感等方面还需进一步提高。提出了在SAW双端口谐振器上涂敷超支化聚合物的方法提高传感器的检测下限和灵敏度。通过建立Van Dyke模型,分析了敏感膜对SAW化学毒剂传感器Q值、插入损耗以及电路阻抗匹配的影响。利用谐振器代替延迟线,确保了器件具有插入损耗、高Q值的特点。实验证实,在谐振器的中心栅结构上涂覆聚合物可以减小粘弹性聚合物对谐振器插损、Q值以及输入输出阻抗的影响。对设计的化学毒剂传感器进行了沙林毒剂检测实验,采用315MHz的SAW谐振器结合超支化聚合物膜,检测沙林气体浓度为5．0mg／m^3。实验表明：这种传感器的灵敏度可达到600Hz／mg／m^3,响应时间为50s,恢复时间约为60s。     

基于凸优化的3D变迹函数水下声呐成像算法

针对水下声呐成像算法中旁瓣电平过高的问题,提出一种基于凸优化的3D变迹函数优化方法,用于成像算法之前,以求在波束形成中获得较低旁瓣电平。利用凸优化算法高效求解满足约束条件的阵元激励权值,将激励权值形成一个3D变迹函数,以幅度变迹的方式作用于各阵元接收的信号,并对幅度变迹后的各阵元接收信号采用延时叠加方法波束形成并成像。以主瓣宽度和峰值旁瓣电平作为衡量波束性能的指标,将所提出方法与切比雪夫窗函数方法和未经变迹函数方法处理进行对比,并进行成像仿真。实验结果表明:所提出方法可以有效地抑制波束峰值旁瓣电平,提高成像对比度。     

一种用于音频信号的Sigma-Delta A/D转换器设计

基于SMIC 180 nm混合信号CMOS工艺,实现了一种应用于音频信号的16 bit四阶级联Sigma-Delta ADC.其过采样率为64,信号带宽为20 kHz.数字滤波器采用CIC抽取滤波器、CIC补偿滤波器及半带滤波器级联实现,其通带纹波小于0.01 dB,阻带衰减达到-100 dB.在1.8V电源电压下,该ADC整体功耗约为2.34 mW.信噪失真比可达95.9 dB.     

SAW化学战剂传感器的研究进展

简要叙述了声表面波(SAW)化学战剂传感器的传感原理和研究进展.详细阐述了高Q低插损SAW振荡电路的设计、敏感膜材料和成膜技术的研究进展,指出了SAW化学战剂传感器发展的趋势.     

基于CPLD的开关电容组式跟踪滤波器设计与实现

针对大动态范围高灵敏度短波接收机射频前端信号处理需要,提出并实现了一种基于CPLD的开关电容组式跟踪滤波器与变容二极管电调谐滤波器串联方案,并对该滤波器性能进行了评估.实验结果表明,该滤波器可以工作于1MHz～30 MHz频段,带宽易调,设计简单,且具有稳定的带宽和很高的温度稳定性.实测的滤波器3 dB带宽为300 kHz～700 kHz,Q值为11.8 dB～25 dB,通带增益为2.5～4.5,能很好地满足接收机设计指标.     

新型抗腐蚀结构声表面波湿度传感器的研究

为解决声表面波(SAW)湿度传感器存在易被污染、不易清洁、稳定性差等问题,提出了一种新的基于改进的单端口SAW谐振器结构用于湿度检测。在此结构中,在ITO材料制作的叉指换能器和反射阵上溅射厚度为5pm Si3N4层以屏蔽各种腐蚀性物质如酸性、碱性等腐蚀性气体对SAW谐振器电极的侵蚀。相比常规谐振器,新结构加大了谐振器叉指换能器与一个反射阵之间距用于涂敷湿敏材料,同时在石英基片背面布设ITO材料脱湿电路。给出了基于此类结构SAW湿度传感器的制作工艺、感湿实验测试结果。实验验证了该结构SAW湿度传感器的可清洁性、耐腐蚀性及该结构的有效性。     

Compact tunable tri-band bandpass filter using varactor diodes for wireless fidelity,wireless local area network,and worldwide interoperability for microwaves access applications

The purpose of this paper is to present a tri-band bandpass filter (BPF) with compact structure. This filter consists of 50 Ω transmission line, varactor diode, positive-intrinsic-negative (PIN) diode, symmetrical square-shaped half-loop resonator pair, and three pairs of rectangular half circle that a T-stub is placed in it. By using the add PIN and varactor diodes in the proposed structure, it is possible to connect and disconnect each band, and change the central frequency up to 400 MHz. In addition, there is a situation to disconnect and connect all three bands simultaneously and asynchronously (unconditionally). This filter contains a low ripple value in all three bands. In this regard, the maximum ripple value does not exceed 0.3 dB and rejection is greater than 25 dB in total stop-band. An experimental tri-band BPF has been developed for wireless fidelity, wireless local area network, and worldwide interoperability for microwaves access applications. The measured results are properly accommodated with simulated results.     

Microstrip patch antenna feed for offset reflector antenna for dual band application

In this article, details of a dual band microstrip patch antenna (MPA) array feed for an offset reflector antenna is presented. The main objective of the proposed structure is to achieve low cross‐polarization at Φ = 90° plane in the reflector pattern. Low cross‐polar levels in the reflector pattern are achieved by illuminating the reflector with fields of the proposed dual band feed structure. A centered circular array as the dual band feed structure is proposed in which the central radiating element is a dual mode circular MPA operating at 6 GHz and the surrounding circular ring of eight circular MPA elements operating at 4 GHz in the dominant mode. The dual mode central antenna uses the concept of conjugate field matching for cross‐polarization reduction. TM₂₁ mode is excited at an appropriate ratio with the TM₁₁ mode to achieve the proper field matching at 6 GHz. The radius of the surrounding circular array is varied to obtain cross‐polarization better than ?30 dB at both the resonant frequencies. The offset reflector gain is found to be better than 37 dB with a 2.5 m parabolic reflector and F/D = 0.8 at both the operating frequencies.     

Matched feeds for offset reflector antenna using circular microstrip patch antenna

This article presents two designs of matched feed for an offset fed reflector. Circular microstrip patch antennas are used in the proposed designs. Both the matched feeds achieve conjugate field matching by generating TM₂₁ mode at an appropriate ratio to the fundamental TM₁₁ mode. The first matched feed generates the required dual mode field distributions using a dual layer stacked patch antenna. The second matched feed is a novel design using centered circular array with the central element generating the required TM₂₁ mode and the surrounding circular ring antenna elements operating in the TM₁₁ mode. Both the designs are studied analytically using cavity model and are implemented in High frequency System Simulator (HFSS) and Computer Simulation Technology (CST). The matched feed designs are investigated for an offset reflector with the projected diameter, D = 50λ, focal length, F = 30λ and clearance height, H = 5λ operating at 20 GHz. The secondary field patterns of the offset reflector fed by the matched feeds are evaluated numerically using a MATLAB code based on geometrical optics technique and verified by HFSS‐PO results. Offset reflector performance such as cross‐polarization, ?30 dB cross‐polar bandwidth, gain, and first side‐lobe level are investigated for the both matched feeds.     

Investigation of high extraction efficiency flip-chip GaN-based light-emitting diodes

In order to obtain higher light output power, the flip-chip structure is used. We studied the ratio of the light of GaN sides before and after fabricating metal reflector on p-GaN. The SiO₂/SiN _x dielectric film reflectors were deposited through plasma enhance chemical vapor deposition following the fabrication of metal reflector, and then the dielectric film reflectors on the electrodes were etched in order to expose the electrodes to the air. It is found that comparing with the flip-chip GaN-LED without dielectric film reflectors, light output power can be increased by as high as 10.2% after the deposition of 2 pairs of SiO₂/SiN _x dielectric film reflectors on GaN-LEDs, which cover the sidewalls and the areas without the metal reflector. This result indicates that the high reflector formed by multi-layer dielectric films is useful to enhance the light output power of GaN-based LED, which reflects light from step sidewalls and p-GaN without metal reflector to internal, and then light emits from the surface. Supported by the National Basic Research Program of China (Grant No. 2006CB604902), and the Funding Project for Academic Human Resources Development in Institutions of Higher Learning under the Jurisdiction of Beijing Municipality (Grant No. 05002015200504)     

Wideband linear microstrip array antenna with high efficiency and low side lobe level

In this letter, the design and fabrication of the linear microstrip array antenna by series fed are presented. The array antenna consists of 16 reflector slot‐strip‐foam‐inverted patch (RSSFIP) antennas. The gain and efficiency of the linear array antenna is 16.6 dBi and 61% at 10 GHz, respectively. The antenna has a bandwidth (BW) of 45% from 8.1 to 12.8 GHz (S₁₁ < ?10 dB) and side lobe level (SLL) of ?25.6 dB across the BW of 19.2% from 9.4 to 10.4 GHz. These are achieved by using a microstrip series fed with defected ground structure (DGS) to feed the patch array antenna. Good agreement is achieved between measurement and simulation results.     

Reducing anchor loss In thin-film aluminum nitride-on-diamond contour mode MEMS resonators with support tethers based on phononic crystal strip and reflector

In this paper, we report on (1) the proposed support tether configuration based on phononic crystal (PnC) strip to reduce the anchor loss in the thin-film piezoelectric-on-diamond (TPoD) contour mode microelectromechanical systems (MEMS) resonators, namely the \(100^0\) oriented thin-film aluminum nitride (AlN)-on-diamond wine glass (WG) and width shear (WS) mode MEMS resonators, (2) impacts of the geometrical dimensions on the band gaps of the proposed PnC structure, (3) evaluation of the performance of the Q improvement between the proposed support tether configuration and the one based on the reflector presented by B P Harrington and R Abdolvand. The designed resonators operate at approximately 115 and 156 MHz corresponding with the WG and WS modes. The band gap width covering these two operating frequencies is 30.2 and 20.6 MHz, respectively. The maximum Q of the WG mode resonator with five-unit cell PnC strip based support tethers achieves up to 398.5 % over that of the same resonator with reflector based support tethers. Similar to the WS mode one with three-unit cell PnC strip based support tethers, this Q is up to 591.1 %. The average Q of the WG mode resonator with PnC strip based support tethers over the maximum Q of the same one with different reflectors is enhanced about 964.4, 952.9, 364.2 and 4599.5 %. For the WS mode resonator, these Q values are up to 2388.8, 1830.4, 528.2 and 2384.5 %. The finite element (FE) analysis in COMSOL Multiphysics software (COMSOL) is utilized to simulate the proposed PnC strip as well as the WG and WS mode resonators.