C波段磁控管注入锁相的实验研究

为了对C波段磁控管进行大功率功率合成,须进行单管锁相研究,本文主要对单管磁控管进行注入锁相实验研究,并讨论了不同注入功率大小对磁控管输出频谱带宽的影响.实验结果表明,通过注入外部信号的方式对C波段磁控管是能够锁相成功的,锁相后输出功率稳定.在实验过程中取得了大量的试验数据,为下一步功率合成实验提供了实验基础.     

C波段高稳定度磁控管微波源实验研究

由于物理机制和工艺结构的固有限制,各种微波源均有其功率极限,而以锁相技术为基础的功率合成技术是获得大功率微波的一条重要途径。主要研究了以磁控管为基本单元的注入式锁相方案,并且采用注入锁相方法对现有的c波段磁控管进行了锁相实验验证,研制出频率、相位、幅度可调的高稳定度磁控管微波源,并结合实验分析了系统的性能指标。     

S波段1 kW连续波磁控管拓展注入锁频带宽

注入锁频技术是实现多只磁控管相干功率合成的关键技术。对S波段1 k W连续波磁控管输出信号频谱的改善进行研究,分析了灯丝电流对磁控管输出特性的影响,通过降低灯丝电流使磁控管自由振荡下的输出微波频带宽度由10 MHz降低至300 k Hz。通过提高参考信号的注入功率,有效地拓展了连续波磁控管的注入锁频带宽,最终获得了高达14 MHz的注入锁频带宽。在不同注入功率比的情况下,该连续波磁控管的外观品质因数QE为52~72。     

清华大学X波段兆瓦级同轴磁控管的研制进展

在过去的十余年中,清华大学加速器实验室致力于X波段同轴磁控管的研发。自2012年成功研制出X波段1.5 MW同轴磁控管(XM-2012)以来,坚持在物理设计、加工工艺和老炼测试等环节进行深入研究,在原有基础上迭代优化出MGT3、MGT4等型号的同轴磁控管,最新样管峰值功率达到1.7 MW以上,与新研发的X波段加速管集成,研制出高稳定性紧凑型加速器系统,剂量率达到800 cGy/min(1 m)以上,达到与S波段加速器系统同等水平;同时对磁控管锁相理论和功率合成进行了大量研究,并在此基础上发展出平行阴极磁控管,将X波段磁控管的输出功率提升到S波段磁控管水平,为进一步拓展X波段高功率磁控管的应用打下了坚实的基础。     

高功率相对论磁控管注入式锁相条件的研究

在经典锁相理论Adler 条件基础上,考虑到相对论磁控管互作用空间内高度非线性的束波互作用,用粒子模拟方法得出了磁控管注入式锁相模型的注入比和频率差的参数区域图,研究了注入比和频率差对锁相的影响。模拟结果表明,在相对论磁控管的谐振频率为2.4667GHz 情况下,当注入比为0.25、频率差为35MHz 或20MHz、注入比为0.15 都可以实现稳定锁相。在此基础上对经典的Adler 条件引入了非线性参数修正,其取值与器件工作时的非线性程度有关,基于本文模型得到的非线性参数约为7,可见修正后的理论结果比经典理论结果允许有更大的锁相范围。     

S波段大功率注入锁频磁控管的输出特性

在多路注入锁频大功率连续波磁控管的相干功率合成实验中,输出特性分析有利于提升合成效率。搭建了一款S波段20 kW连续波磁控管注入实验系统,该系统包含幅频可调的微波源和移相器,由磁控管信号发生系统、注入锁定系统以及相位差检测系统3个小系统组成。利用外部注入信号,分别对磁控管输出信号的相位稳定度、频谱和相位噪声进行实验分析,实现了对实际磁控管在外部注入前后的特性分析。其中,相位差波动最小不足4°,最大17°,锁频带宽在2.9~13 MHz之间变化,在偏移频率1 MHz内对相位噪声抑制超过40 dB;并对注入锁频信号与输出信号之间的关系进行了总结,为多路大功率磁控管的功率合成提供理论依据。     

已调信号注入磁控管的仿真研究

为克服磁控管本身固有的频谱较宽、相位噪声大等缺点,注入锁频技术被广泛地应用以获得较稳定的频率和相位差,并有效地降低相位噪声。在以往的注入锁频理论中,外部注入信号通常为一个单频信号,其频率接近磁控管自由振荡频率。而本文将一个幅度调制信号注入磁控管来取代单频信号,此时,磁控管既作为一个振荡器,又作为一个放大器。仿真结果证明,当幅度调制信号的载波频率与磁控管自由振荡频率满足Adler条件时,同样能够实现锁频。此时,磁控管输出信号可以看作为一个包络受外部注入调幅信号控制的被放大的已调信号。在此过程中,实现锁频的同时也实现了信息的传输,有望应用于携能通信中。     

低相位噪声微波频率源的研究

通过对微波频率源相位噪声的分析,针对一个C波段微波频率源低相位噪声的要求,对比分析了直接倍频、数字锁相以及高频鉴相之后再倍频三种方案之间的相位噪声差别。最终得出采用直接在超高频(UHF)波段对输入信号进行模拟鉴相并锁定之后再倍频才能达到所要求的相位噪声指标。对制成的样品进行了测试,取得了预期的相位噪声指标。该C波段微波频率源的相位噪声可以达到:≤-120 dBc/Hz@1 kHz,≤-125 dBc/Hz@10 kHz,≤-130dBc/Hz@100kHz,≤-140 dBc/Hz@1 MHz。直接在UHF波段进行高频鉴相的技术,通过提高鉴相频率大幅降低了微波锁相频率源的相位噪声。     

S波段15 kW连续波磁控管注入锁频实验研究

注入锁频是磁控管相干功率合成的基础,本文开展了15 kW磁控管的注入锁频实验,研究了注入微波功率与可牵引带宽之间的关系。实现了15 kW磁控管注入锁频,分析了不同注入功率下磁控管可牵引带宽。实验结果表明,磁控管注入锁频牵引带宽随注入功率增大而增加,在165 W注入功率下牵引带宽达到5 MHz。该15 kW磁控管可用于大功率微波相干功率合成,为多支大功率磁控管进行功率合成研究奠定了基础。     

C波段4路磁控管相干功率合成微波源实验研究

针对目前C波段磁控管存在的频率输出不稳定、相位输出随机移动、功率容量的物理限制等一系列问题,设计实现了基于注入锁频和反馈调相技术的C波段4路磁控管相干功率合成微波源。该微波源由三部分构成:4路独立注入锁定的磁控管单元,4路间稳频、锁频、比相的反馈控制单元,测量及显示单元。为更好的对C波段4路磁控管相干功率合成微波源进行研究,在搭建的4路磁控管微波源的平台上,对直流高压源的纹波特性、磁控管的阳极电流、功放的注入功率、4路磁控管之间的相位控制等影响微波源输出特性的相关因素进行了实验研究。最终实现微波源工作带宽:5.788GHz±2MHz;频率稳定度:0.07%;相位调节范围:0°~360°;相位调节精度:±3°;相位噪声:-40dBc/Hz@1kHz;功率合成效率:94.74%;总输出功率>2000W。     

Computer simulation of Adler's generalized equation for the interaction of oscillators with injected signals

A computer simulation that solves Adler's generalized equation describing the interaction of an injected signal with a free running oscillator is presented [1]. The simulation, performed on a digital computer, offers the advantage of a fast turn-around, great flexibility, and a high degree of accuracy. In contrast to analog computer simulations, no scaling is required. The simulation is demonstrated by determining the injection locking properties of an avalanche diode oscillator and of a pulsed magnetron with injected CW signals. The results concerning avalanche diode oscillator injection locking are in good agreement with other computational methods reported in current literature. The injection locking simulation of pulsed magnetrons, the results of the simulation, appear to confirm experimental data reported in the literature.     

Some properties of an injection-locked pulsed magnetron in a coherent-echo-detection system

An injection-locked pulsed magnetron is studied by observing echo pulses from an acoustic-delay medium. Phase coherence at 9.3GHz is observed for injection ratios as high as 40dB. Long-term stabilities better than one part in 105 per hour are measured. Injection-pulse amplification is observed at frequencies outside the locking band.     

一种毫米波宽锁定范围的注入锁定倍频器设计

为提高毫米波段倍频器在低功耗下的工作带宽,采用IHP130 nm SiGe BiCMOS 工艺,设计了一种采用双端注入技术的毫米波宽锁定范围注入(DEI)锁定倍频器。该注入锁定倍频器主要由谐波发生器和带有尾电流源的振荡器构成,由巴伦产生差分信号双端注入振荡器的形式提高三次谐波注入强度,使其在E、W 等波段输出宽锁定范围和良好相位噪声性能的三倍频信号。仿真结果表明,注入锁定倍频器在工作电压为1.2 V,输入信号功率为0 dBm时,其锁定范围在57~105 GHz 内。在相同工作电压和输入信号功率下,输入频率为32 GHz 时,一次、二次和四次谐波抑制大于20 dBc,功耗为9.1 mW。     

基于40 nm CMOS工艺的毫米波注入锁定分频器

设计了一款应用于60 GHz频率综合器的二分频注入锁定分频器。通过优化射频注入和直流偏置网络,降低了注入信号损耗,提高了注入效率;通过优化注入管和交叉管尺寸、减小寄生电容、降低振荡摆幅,提高了注入效率,降低了功耗;电磁仿真毫米波段电感,建立集总等效电路模型,实现了高感值、低串联电阻的差分电感的设计,提高了锁定范围。电路设计采用SMIC 40 nm 1P6M RF CMOS工艺,芯片核心面积为0.016 mm²。仿真结果表明,在0.8 V电源电压下,电路功耗为5.5 mW,工作频率范围为55.2~61.2 GHz,注入锁定范围为6.0 GHz,满足低功耗和宽锁定范围的要求,适用于毫米波段锁相环频率综合器。     

应用于K波段的宽锁定范围低功耗注入锁定三倍频器

This paper presents a wide locking range and low DC power injection-locked frequency tripler for Kband frequency synthesizers application. The proposed ILFT employs a variable current source to decouple the injection signal path and the bias current so that the third harmonic of the injection signal can be maximized to enlarge the locking range. Meanwhile, a 2-bit digital control capacity array is used to further increase the output frequency locking range. It is implemented in a 130-nm CMOS process and occupies a chip area of 0.7 0.8 mm2 without pads. The measured results show that the proposed ILFT can achieve a whole locking range from 18 to21 GHz under the input signal of 4 d Bm and the core circuit dissipates only 4 m W of DC power from a 0.8 V supply voltage. The measured phase noise degradation from that of the injection signal is only 10 d B at 1 MHz offset.     

Wideband Frequency Synthesizer at X/Ku Band by Mixing and Phase Locking of Half Frequency Output of VCO

A wideband low phase noise frequency synthesizer at X/Ku band has been developed by using phase locking and mixing technique at half frequency of voltage controlled oscillator (VCO). The half frequency output signal of the VCO is down converted by a balanced mixer at C band to obtain an intermediate frequency (IF) signal used for phase locking of the VCO. An ultra low phase noise local signal source at 6 GHz is developed with a frequency multiplying chain driven by a 100 MHz oven controlled crystal oscillator (OCXO). Coupling circuit outside the VCO chip to the mixer does not need to be specially designed, which is beneficial to simplify the circuit scheme and improve the phase noise performance. Measurement results show that the phase noise of the output signal at 10.6 GHz to 11.8 GHz and 12.3 GHz to 13.0 GHz is better than −102 dBc/Hz at 10 kHz away form the carrier center. This frequency synthesizer can be used as local signal source or driving source for the development of wideband millimeter-wave frequency synthesizer systems.     

Phase locking and chaos synchronization in injection-locked semiconductor lasers

We theoretically studied synchronization of chaotic oscillation in semiconductor lasers with chaotic light injection. Feedback-induced chaotic light generated from a master semiconductor laser was injected into a solitary slave semiconductor laser. The slave laser subsequently exhibited synchronized chaotic output for a wide parameter range with strong injection and frequency detuning within the injection-locking regime. Our numerical simulation revealed that the synchronized slave laser exhibits remarkable phase locking, even for chaotic light injection. Consequently, synchronization in phase fluctuations becomes dominant over intensity fluctuations. We found that there exists a parameter range where the slave can synchronize in phase only, with no intensity synchronization. However, synchronization can be completely destroyed, both in phase and in intensity, when the phase locking becomes unstable due to four-wave mixing or excited resonance oscillation. The phase locking was studied analytically and the correspondence between numerical and analytical results was shown. We also analytically examined chaos synchronization based on a linear stability analysis from the viewpoint of modulation response of injection-locked semiconductor lasers to a chaotic light signal. As a result, we verified that such injection-locking-induced chaos synchronization results from a quasilinear response of the bandwidth-broadened slave laser due to strong optical injection.     

Generation of a CW Local Oscillator Signal Using a Stabilized Injection Locked Semiconductor Laser

We explore the technique of injection locking a semiconductor laser with a portion of the received optical signal to regenerate a local oscillator for eventual use with a homodyne receiver. In addition, we show that the injection locking process can be electronically stabilized by using the Modulation Transfer Ratio (MTR) of the slave laser as a monitor, given either a DFB or Fabry-Perot slave laser. We show that this stabilization technique maintains injection lock (given a locking range of ~1 GHz) for laser drift much greater than what is expected in a typical transmission system. In addition, we explore the quality of the output of the slave laser, and analyze its suitability as a local oscillator signal for a homodyne receiver.