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1.
This paper presents designs and measurements of Ka-band single-pole single-throw (SPST) and single-pole double-throw (SPDT) 0.13-CMOS switches. Designs based on series and shunt switches on low and high substrate resistance networks are presented. It is found that the shunt switch and the series switch with a high substrate resistance network have a lower insertion loss than a standard designs. The shunt SPST switch shows an insertion loss of 1.0 dB and an isolation of 26 dB at >35 GHz. The series SPDT switch with a high substrate resistance network shows excellent performance with 2.2-dB insertion loss and isolation at 35 GHz, and this is achieved using two parallel resonant networks. The series-shunt SPDT switch using deep n-well nMOS transistors for a high substrate resistance network results in an insertion loss and isolation of 2.6 and 27 dB, respectively, at 35 GHz. For series switches, the input 1-dB compression point (1P1) can be significantly increased to with the use of a high substrate resistance design. In contrast, of shunt switches is limited by the self-biasing effect to 12 dBm independent of the substrate resistance network. The paper shows that, with good design, several 0.13- CMOS designs can be used for state-of-the-art switches at 26-40 GHz. 相似文献
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本文介绍了单片集成GaAs MESFET微波开关的设计方法和制作工艺.利用空气桥和通孔接地等工艺技术,研制成的调配型宽带单刀单掷开关在0.01~7GHz内,插损为2~3.5dB,隔离度不小于32dB;分布型宽带单刀双掷开关在4.5~7GHz内,插损为1~2dB,隔离度不小于21dB,5GHz下的最大功率容量为3瓦.实验也证实电路的开通时间小于0.6ns. 相似文献
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《Electron Device Letters, IEEE》1980,1(8):156-158
The use of GaAs FETs as microwave switches is discussed, and the feasibility of such devices for applications requiring ultra low dc power consumption, low insertion loss, and bidirectionality is demonstrated. A discrete SPST switch consisting of two parallel-resonated single-gate GaAs FETs exhibited 0.5 db insertion loss with 25 db isolation at 8.5 GHz. The first monolithic SPDT switch incorporating parallel-resonated GaAs FETs is also reported. 相似文献
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采用滤波器综合分析方法, 基于分立式AlGaAs/GaAs异质结PIN二极管, 根据其等效寄生参数, 综合出单刀二掷开关集总参数滤波器模型, 以此分析其等效分布参数电路, 设计出了118 GHz星载辐射计用单刀二掷开关准单片, 开关电路尺寸6×2.5×0.1 mm3.通过开关模块封装用波导-微带过渡和键合金带插损的分析研究, 研制出了低插损的118 GHz开关模块, 在110~120 GHz, 测得开关插损小于3.0 dB, 插损典型值2.6 dB;开关隔离度大于22 dB;开关响应时间、导通时间、关断时间、恢复时间分别小于18 ns、20 ns、10 ns、18 ns, 该准单片作为通道切换开关可集成应用于118 GHz收发组件中. 相似文献
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采用76.2mm(3英寸)GaAs PIN二极管工艺设计和制作了大功率毫米波单刀双掷开关单片。采用并联结构的单刀双掷开关以获得较高的功率特性。在片测试表明,在30~36GHz工作频段,开关导通支路插损1.0dB,驻波优于1.5,开关关断端口隔离度大于34dB。开关在导通态下输入功率0.5dB压缩点P-0.5 dB大于5W。 相似文献
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《Electron Devices, IEEE Transactions on》1981,28(2):198-204
Several designs of monolithic switches for X-band applications have been fabricated and tested. These switches, which consist of two parallel-resonated GaAs FET's in a series SPDT configuration, have very low dc power dissipation, low insertion loss, and are bidirectional. An insertion loss of 0.7 dB with 28-dB isolation at 10.2 GHz has been measured for these devices. A simple equivalent circuit model is presented which explains reasonably well the basic features of resonated GaAs FET switches. The tradeoffs between performance and bandwidth, and the important design criteria, particularly with respect to the layout of monolithic inductors, are investigated. 相似文献
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Wu Y. C. Chang E. Y. Lin Y. C. Hsu H. T. Chen S. H. Wu W. C. Chu L. H. Chang C. Y. 《Microwave and Wireless Components Letters, IEEE》2007,17(2):133-135
Copper metallized AlGaAs/InGaAs pseudomorphic high-electron-mobility transistor (PHEMT) single-pole-double-throw (SPDT) switches utilizing platinum (Pt, 70nm) as the diffusion barrier is reported for the first time. In comparison with the Au metallized switches, the Cu metallized SPDT switches exhibited comparable performance with insertion loss of less than 0.5dB, isolation larger than 35dB and the input power for one dB compression (input P1dB ) of 27dBm at 2.5GHz. These switches were annealed at 250deg for 20h for thermal stability test and showed no degradation of the dc characteristics after the annealing. Also, after 144h of high temperature storage life (HTSL) environment test, these switches still remained excellent and reliable radio frequency (RF) characteristics. It is successfully demonstrated for the first time that the copper metallization using Pt as the diffusion barrier could be applied to the GaAs monolithic microwave integrated circuits switch fabrication with good RF performance and reliability 相似文献
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本文介绍了全气密陶瓷封装GaAs MMIC开关的设计方法和制造工艺.研制成的GaAsMMIC单刀单掷开关在DC-12GHz频带内,插入损耗为0.3—1.4dB,隔离度为19—27dB,反射损耗大于11dB,开关速度小于1ns,8GHz下功率处理能力大于25dBm. 相似文献
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Ruei Bin Lai Shih Fong Chao Zuo Min Tsai Lee J. Huei Wang 《Microwave Theory and Techniques》2008,56(7):1545-1554
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毫米波GaAs pin单刀单掷开关单片 总被引:1,自引:0,他引:1
采用GaAs pin二极管,完成了15~40GHz的单刀单掷开关单片的设计、制作.GaAs pin二极管SPST开关单片具有低插损、高隔离、高功率的特点,在15~20GHz带内插损0.6dB,驻波优于1.5,隔离度大于40dB;在20~40GHz带内插损小于1.1dB,驻波优于1.35,隔离度大于35dB.pin二极管SPST开关单片的1dB功率压缩点P-1大于2W.GaAs pin二极管开关单片采用MOCVD生长的GaAs 纵向pin二极管材料结构,76mm GaAs圆片工艺加工制作. 相似文献
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DC-40GHzMMIC开关叶禹康,俞土法,伍祥冰(南京电子器件研究所,210016)提要*用微波单片集成电路(MMIC)技术设计制作了高隔离度、超快速DC-40GHzMMIC开关(SPST)。开关采用串联、并联单元MESFET兼用的电路结构。芯片尺... 相似文献
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DC-40GHzMMIC开关叶禹康,俞土法,伍祥冰(南京电子器件研究所,210016)提要*用微波单片集成电路(MMIC)技术设计制作了高隔离度、超快速DC-40GHzMMIC开关(SPST)。开关采用串联、并联单元MESFET兼用的电路结构。芯片尺... 相似文献
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Zhengbin Xu Jian Guo Cheng Qian Wenbin Dou 《Journal of Infrared, Millimeter and Terahertz Waves》2011,32(12):1434-1445
In this paper, a W-band single pole single throw (SPST) switch based on a novel PIN diode model is presented. The PIN diode is modeled using a full-wave electromagnetic (EM) simulator and its parasitic parameters under both forward and reverse bias states are described by a T-network. By this approach, the measurement-based model, which is usually a must for high performance switch design, is no longer necessary. A compensation structure is optimized to obtain a high isolation of the switch. Accordingly, a W-band SPST switch is designed using a full wave EM simulator. Measurement results agree very well with simulated ones. Our measurements show that the developed switch has less than 1.5 dB insertion loss under the ??on?? state from 88 GHz to 98 GHz. Isolation greater than 30 dB over 2 GHz bandwidth and greater than 20 dB over 5 GHz bandwidth can be achieved at the center frequency of 94 GHz under the ??off?? state. 相似文献
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GaAs PIN二极管具有开态电阻小、截止频率高以及功率容量大的特点,采用GaAs PIN二极管制作的开关插入损耗较小、隔离度较高、并且功率的线性较好。基于河北半导体研究所GaAs PIN工艺制造了一款单刀双掷开关芯片。该开关采用单级并联结构。通过微波在片测试,在小信号条件下,6~18 GHz范围内插入损耗小于1.45 dB、隔离度大于28 dB,输入输出反射损耗小于7.5 dB。把开关装入夹具中进行功率特性测试,在连续波输入功率37 dBm,12 GHz条件下测试输出功率仅压缩0.5 dB,具有非常好的功率特性。在4英寸(100 mm)晶圆上开关的成品率较高,具有非常好的工程应用前景。 相似文献
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一种X波段GaAs单片单刀双掷开关 总被引:1,自引:0,他引:1
采用0.2μmGaAsPHEMT工艺设计了一种X波段单刀双掷开关单片集成电路。在片测试结果为8~11GHz范围内,隔离度>30dB,在中心频率9.5GHz能够达到45dB,插损<1.2dB。芯片结构非常简单紧凑,仅用了两个并联的PHEMT管。 相似文献
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1~26.5GHz GaAs PIN单刀单掷开关单片 总被引:1,自引:0,他引:1
采用GaAs PIN二极管,完成1~26.5 GHz的单刀单掷开关单片的设计、制作。SPST开关单片带内插损小于0.5 dB,驻波优于1.1,隔离度大于27 dB,在10~26.5 GHz,隔离度大于37 dB。开关单片采用MOCVD生长的GaAs纵向PIN二极管材料结构,76 mm GaAs圆片工艺加工制作。 相似文献
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The letter reports new results of fin-line PIN-diode attenuators and switches for the 94 GHz range. Design and performance of SPST and SPDT switches?single-pole single-throw and single-pole double-throw, respectively?will be presented. The attenuation of the SPST switch, for example, can be adjusted between 2 and 35 dB over the entire waveguide band from 75 to 110 GHz. 相似文献
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Jung Gil Yang Kyounghoon Yang 《Microwave and Wireless Components Letters, IEEE》2009,19(10):647-649
This letter describes the design and fabrication of a broadband InGaAs PIN traveling wave switch. A new thin-film microstrip line structure integrated with InGaAs PIN diodes has been used to enhance the switch performance at higher frequencies. The developed InGaAs PIN switch has an insertion loss of less than 3.2 dB and an isolation of greater than 40 dB in a broadband frequency range from 25 to 95 GHz. The BCB-based multi-layer technology effectively reduces the chip size of the fabricated SPDT MMIC switch to 1.05 times 0.58 mm2. To our knowledge, this is the first InGaAs PIN traveling-wave switch demonstrated up to 95 GHz. 相似文献