Effects of MgO on properties of Li2O–Al2O3–SiO2 glass–ceramics for LTCC applications

Li₂O–Al₂O₃–SiO₂ (LAS) glass–ceramics for low temperature co-fired ceramics (LTCC) application were prepared by melting method, and the effects of MgO on the sinterability, microstructure, dielectric property, thermal expansion coefficient (CTE) and mechanical character of this glass–ceramics have been studied. The X-ray diffraction images represent that the main phase is β-spodumene solid solutions. And some ZrO₂ and CaMgSi₂O₆ phases in LAS glass–ceramics are detected. The LAS glass–ceramics without additive (MgO) sintered at 800° had the dielectric properties: dielectric constant (ε_r) of 5.3, dielectric loss (tanδ) of 2.97 × 10^?3 at 1 MHz, CTE value of 1.06 × 10^?6 K^?1, bulk density of 2.17 g/cm³, and flexural strength of 73 MPa. 5.5 wt% MgO-added LAS glass–ceramic achieves densification at 800° exhibited excellent properties: low dielectric constant and loss (ε_r = 7.1, tanδ = 2.02 × 10^?3 at 1 MHz), low CTE (2.89 × 10^?6 K^?1), bulk density = 2.65 g/cm³ as well as high flexural strength (145 MPa). The results indicate that the addition of MgO is helpful to improve the dielectric and mechanical properties. The formation of CaMgSi₂O₆ crystal phase with higher CTE leads to the increase of CTE value of LAS glass–ceramics due to the increasing MgO content, and the increase of CTE is favourable for matching with silicon (3.1 × 10^?6 K^?1). The prepared LAS glass–ceramics have the potential for LTCC application.     

The Magnetic and Structural Properties of SiC-Doped MgB2 Bulks Prepared by the Standard Ceramic Processing

According to general formula MgB_2?x SiC _x (x=0,0.05,0.1,0.2), MgB₂ and SiC-doped bulk superconductors were prepared by the standard ceramic processing. The mixtures of the corresponding powders were sintered at 750?°C for 0.5 h under pressure of 8 bar Argon. X-ray diffraction patterns show that all the samples have MgB₂ as the main phase with a very small amount of MgO; further, with SiC-doped, the presence of Mg₂Si is also noted. The magnetization-temperature measurements showed a transition temperature of 37.5 K for the undoped sample which indicates the typical transition temperature of MgB₂. When the content of SiC increased in the sample, the transition temperatures decreased to the lower temperatures systematically. The M?CH loops measured using a VSM showed very large magnetization value at low temperature for SiC doped samples. The largest M?CH loops were taken from the sample contains 5% SiC. The critical current density of samples calculated from M?CH loops indicated a value of around 4×10⁵ A/cm², which is in good agreement with the literature.     

Thermal expansion of cross-ply and woven carbon fibre–copper matrix composites

This paper presents thermal expansion data for cross-ply and woven copper matrix–carbon fibre composites (Cu–C_f MMCs) that were prepared by diffusion bonding. Thermal expansion was measured in two perpendicular in-plane directions of plate samples. For cross-ply samples (57 vol.%fibres) the mean coefficient of thermal expansion (CTE) between −20 and 300°C changed from approximately 6.5×10⁻⁶/°C to 3.5×10⁻⁶/°C during heating/cooling. The in-plane CTE increases with decreasing fibre content. Composites with woven arrangement of carbon fibres show a slightly higher CTE at elevated temperature.     

Influence of cryogenic thermal cycling treatment on the thermophysical properties of carbon/carbon composites between room temperature and 1900 °C

Influence of cryogenic thermal cycling treatment (from ?120 °C to 120 °C at 1.3 × 10^?3 Pa) on the thermophysical properties including thermal conductivity (TC), thermal diffusivity (TD), specific heat (SH) and coefficient of thermal expansion (CTE) ranging from room temperature to 1900 °C of carbon/carbon (C/C) composites in x-y and z directions were studied. Test results showed that fiber/matrix interfacial debonding, fiber pull-out and microcracks occurred after the cryogenic thermal treatment and they increased significantly with the cycle number increasing, while cycled more than 30 times, the space of microdefects reduced obviously due to the accumulation of cyclic thermal stress. TC, TD, SH and CTE of the cryogenic thermal cycling treated C/C composites were first decreased and then increased in both directions (x-y and z directions) with the increase of thermal cycles. A model regarding the heat conduction in cryogenic thermal cycling treated C/C composites was proposed.     

Crystallographic, thermoelectric, and mechanical properties of polycrystalline type-I Ba8Al16Si30-based clathrates

Crystallographic, thermoelectric, and mechanical properties of polycrystalline Ba₈Al₁₆Si₃₀-based samples with type-I clathrate structure prepared by combining arc melting and spark plasma sintering methods were investigated. The major phase of the samples was a type-I clathrate with an actual Al/Si ratio of ~15/31, strongly suggesting that framework deficiency was absent or was present in very low concentration in the samples. The Hall carrier concentration n of the samples was approximately 1 × 10²¹ cm^?3, which is lower than the values reported so far for the Ba₈Al₁₆Si₃₀ system. Other important material parameters of the samples were as follows: the density-of-states effective mass m* = 2.3m ₀, Hall mobility μ = 7.4 cm² V^?1 s^?1, and the lattice thermal conductivity κ _L = 1.2 W m^?1 K^?1. The thermoelectric figure of merit ZT reached approximately 0.4 (900 K) for a sample with n = 9.7 × 10²⁰ cm^?3. Simulation using the experimentally determined values of material parameters showed that ZT reached values >0.5 if the carrier concentration is optimized at about 3 × 10²⁰ cm^?3. Young’s, shear, and bulk moduli were estimated to be approximately 98, 39, and 117 GPa, respectively, and Poisson’s ratio was found to be 0.25 from the longitudinal and transverse velocities of sound, v _L = 6038 m/s and v _T = 3503 m/s, respectively, for a sample with ZT = 0.4. The coefficient of thermal expansion (CTE) ranged from approximately 8 × 10^?6 K^?1 to 10 × 10^?6 K^?1 (330–690 K), which is smaller than the values reported for Ba₈Ga₁₆Ge₃₀ and Sr₈Ga₁₆Ge₃₀ clathrates.     

The thermal expansion coefficient as a key design parameter for thermoelectric materials and its relationship to processing-dependent bloating

The coefficient of thermal expansion (CTE) is a key design parameter for thermoelectric (TE) materials, especially in energy harvesting applications since stresses generated by CTE mismatch, thermal gradients, and thermal transients scale with the CTE of the TE material. For the PbTe–PbS-based TE material (Pb_0.95Sn_0.05Te)_0.92(PbS)_0.08—0.055 % PbI₂ over the temperature ranges of 293–543 and 293–773 K, a CTE, α_avg, of 21.4 ± 0.3 × 10^?6 K^?1 was measured using (1) dilatometry and (2) high-temperature X-ray diffraction (HT-XRD) for powder and bulk specimens. The CTE values measured via dilatometry and HT-XRD are similar to the literature values for other Pb-based chalcogenides. However, the processing technique was found to impact the thermal expansion such that bloating (which leads to a hysteresis in thermal expansion) occurred for hot pressed billets heated to temperatures >603 K while specimens fabricated by pulsed electric current sintering and as-cast specimens did not show a bloating-modified thermal expansion even for temperatures up to 663 K. The relationship of bloating to the processing techniques is discussed, along with a possible mechanism for inhibiting bloating in powder processed specimens.     

A study on La2Mo2O9 decomposition process

The present paper reports the first stage of the study by the present group on the thermal decomposition of La₂Mo₂O₉ under lower oxygen partial pressure. The stability of La₂Mo₂O₉ at 1473 K in an oxygen partial pressure $ (p_{{{\rm O}_{2} }} ) $ ranges from 2.44 × 10^?5 to 4.33 × 10^?9 Pa was studied by XRD. The results showed that La₂Mo₂O₉ could remain stable in a $ p_{{{\rm O}_{2} }} $ range greater than 2.44 × 10^?5 Pa. While below this $ p_{{{\rm O}_{2} }} $ , the formation of several reduced and crystallized molybdates were found. By means of XRD, TEM, SAED, and EDS, the decomposition process of La₂Mo₂O₉ at 1473 K under $ p_{{{\rm O}_{2} }} $ of 9.75 × 10^?7 Pa was investigated. The intermediate and final products formed during the thermal decomposition were characterized. It was found that the La₂Mo₂O₉ decomposition consisted of two steps. La₂Mo₂O₉ first decomposed to intermediate products like LaMo₂O₅, La₅Mo₄O₁₄, and La₁₂Mo₆O₃₅ and then to final products like La₅Mo₃O₁₆ and a new Mo-rich compound. Tilt series of SAED patterns of this new structure were recorded. These measurements were used for the reconstruction of the reciprocal space. The cell attained was monoclinic with parameters: a ≈ 1.195 nm, b ≈ 4.133 nm, c ≈ 1.314 nm, and β ≈ 95°.     

Study on properties of forsterite/cordierite ceramic composites

The forsterite/cordierite ceramic composites are prepared by standard ceramic method, which properties and microstructures are characterized by X-ray diffraction and Scanning electron microscopy. It is found that the values of volume resistivities rapidly decline from 1 × 10¹³ to 10³ Ω cm as the testing temperatures increase from 20 to 600 °C and the resistivity transition temperatures of forsterite, cordierite and their composites are at about 300, 200 and 250 °C, respectively. The values of ε _r and tan δ are somewhat independent of the temperatures between 20 and 200 °C, but increase rapidly between 200 and 600 °C. The thermal expansion coefficient of ceramic composites decline with the cordierite content increasing and could change from about 2.5 × 10^?6–10.5 × 10^?6 °C^?1, in which the major phases are Mg₂SiO₄ and Mg₂Al₄Si₅O₁₈.     

Structural and electrical properties of V-doped ZnO prepared by the solid state reaction

This paper reports the synthesis, crystal structure and electrical conductivity properties of vanadium (V)-doped zinc oxide (ZnO) powders (i.e. Zn_1?2X V _X O binary system, x = 0, 0.0025, 0.005, 0.0075 and in the range 0.01 ≤ x ≤ 0.15). I-phase samples, which were indexed as single phase with a hexagonal (wurtzite) structure in the V-doped ZnO binary system, were determined by X-ray diffraction (XRD). The limit solubility of V in the ZnO lattice at this temperature is 3 mol % at 950 °C. The impurity phase at 950 °C was determined as ZnV₂O₆ when compared with standart XRD data. The research focused on single I-phase ZnO samples which were synthesized at 950 °C because of the limit of the solubility range is widest at this temperature. It was observed that the lattice parameters a and c decreased with V doping concentration. The electrical conductivity of the pure ZnO and single I-phase samples were studied using the four-point probe dc method at temperatures between 100 and 950 °C in an air atmosphere. The electrical conductivity values of pure ZnO and 3 mol % V-doped ZnO samples at 100 °C were 2.75 × 10^?6 and 7.94 × 10^?5 Ω^?1 cm^?1, and at 950 °C they were 3.4 and 54.95 Ω^?1 cm^?1, respectively. In other words, the electrical conductivity increased with V doping concentration.     

Bi2MoO6 dielectric thin films fabricated by thermal oxidation of Bi/Mo thin films at ultra-low temperature

Bi/Mo multilayer thin films are deposited on Si/SiO₂/Pt substrates by direct current magnetron sputtering. The effect of annealing temperature on the microstructure, dielectric and electrical properties of the as-sputtered films is characterized systematically. X-ray diffraction data indicate that the films annealed at 450–600 °C are a mixture of diphase with the main phase Bi₂MoO₆ and secondary phase Bi₂Mo₂O₉. Results of scanning electron microscope observation show that the films annealed at 500–550 °C are dense and uniform, in particular the films annealed at 500 °C exhibit optimal dielectric and electrical properties with dielectric constant as high as 37.5, dielectric loss 1.06 %, temperature coefficient of dielectric constant ?10.86 ppm °C^?1 at 1 kHz, and leakage current density of 1.46 × 10^?7 A mm^?2 at an electric field of 18.2 kV mm^?1. With the advantages of ultralow densification temperature (500 °C) and very high sputtering deposition rate (76 nm min^?1), it is anticipated that thermal oxidation method of the sputtered Bi/Mo thin films could be a promising technique for fabrication of Bi₂MoO₆ ceramic thin film embedded-capacitors.     

Microwave dielectric properties of Li2ZnTi3O8 ceramics prepared by reaction-sintering process

Li₂ZnTi₃O₈ (LZT) microwave dielectric ceramics prepared by reaction-sintering process were investigated. Li₂CO₃, ZnO and TiO₂ powders were mixed, pressed and sintered directly into ceramic pellets without any calcination stage involved. Pure LZT phase was obtained after sintering at temperatures above 1,100 °C for 2 h. LZT ceramic with the maximum bulk density of 3.81 g/cm³ (96.2 % of the theoretical value) and excellent microwave dielectric properties of ? _r  = 25.8, Q × f = 78,216 GHz and τ _f  = ?10.5 ppm/°C was obtained after sintering at 1,100 °C for 2 h. The results show that the reaction-sintering process is a simple and effective method to produce LZT ceramics.     

Microwave dielectric properties of Bi(Sc<Subscript>1/3</Subscript>Mo<Subscript>2/3</Subscript>)O<Subscript>4</Subscript> ceramics for LTCC applications

A novel microwave dielectric ceramics Bi(Sc_1/3Mo_2/3)O₄ with low firing temperature were prepared via the solid reaction method. The specimens have been characterized using scanning electron microscopy, X-ray diffraction, Raman spectroscopy and DC conductivity. The Bi(Sc_1/3Mo_2/3)O₄ ceramics showed B-site ordered Scheelite-type structure with space group C2/c. Raman analysis indicated that prominent bands were attributed to the normal modes of vibration of MoO₄ ^2? tetrahedra. The dielectric loss of Bi(Sc_1/3Mo_2/3)O₄ ceramics can be depended strongly the bulk conductivity by DC measurement. The superior microwave dielectric properties are achieved in the Bi(Sc_1/3Mo_2/3)O₄ ceramic sintered at 875 °C/4 h, with dielectric constant?~?25, Q?×?f ~?51,716 GHz at 6.4522 GHz and temperature coefficient of resonance frequency ~???70.4 ppm/°C. It is a promising microwave dielectric material for low-temperature co-fired ceramics technology.     

Thermal expansion behaviour of plasma sprayed Al–SiCp composites

Abstract

Al with 55 and 75 vol.-%SiC powders were free mechanically mixed or ball milled as feedstock. The powder feedstock was deposited onto a graphite substrate to form near net shape of Al/SiC composites by air plasma spraying. The pores and the gaps at the Al/SiC interface as well as at the boundary of Al grains exist extensively in the as sprayed composites. Coefficient of thermal expansion (CTE) of the sprayed composites was measured in the temperature range of 25–300°C. The composites plasma sprayed with Al–75SiC powder feedstock can reach a low CTE value of 8 × 10^?6 °C^?1. The effect of pore on the CTE of the composites has been discussed. The gap at Al/SiC interface has an influence on thermal expansion behaviour only at lower test temperatures. Reduction and elimination of the gap with temperature can offset the thermal expansion of the as sprayed composites, resulting in lower CTE at the beginning of the CTE test. Roughly quantitative consideration of the effect of the interfacial gaps between Al and SiC on CET was given. Linear rule of mixture (ROM), Turner and Kerner's models were used to estimate the CTE of the sprayed composites. It was found that ROM and Kerner's model give closer CTE prediction for the present composites.     

Role of diffusion-annealing time on the superconducting, microstructural and mechanical properties of Cu-diffused bulk MgB2 superconductor

In this study, the effect of various annealing time (0.5, 1, 1.5 and 2 h) on microstructural, mechanical and superconducting properties of the Cu-diffused bulk MgB₂ superconducting samples is investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), Vickers microhardness (H _v ) and dc resistivity measurements for the first time. The critical transition temperature, grain size, phase purity, lattice parameter, surface morphology, crystallinity and room temperature resistivity values of the bulk samples prepared are compared with each other. Electrical-resistivity measurements show that the sample (annealed at 850 °C for 1 h), exhibiting the highest room temperature resistivity, obtains the maximum zero resistivity transition temperature (T _c ). From the XRD results, all the samples contain MgB₂ as the main phase with a very small amount of Mg₂Cu phase. Moreover, SEM investigations conducted for the microstructural characterization illustrate that not only does the grain size of the samples studied enhance gradually, but the surface morphology and grain connectivity also improve with the increase in the diffusion-annealing time up to 1 h beyond which all the properties obtained start to degrade. Indeed, the worst surface morphology is observed for the Cu-diffused bulk MgB₂ superconductor exposed to 2 h annealing duration. At the same time, Vickers microhardness, elastic modulus, load independent hardness, yield strength, fracture toughness and brittleness index values are calculated separately for the pure and Cu-diffused samples. It is found that the microhardness values depend strongly on the diffusion-annealing time. Furthermore, the diffusion coefficient of the Cu ion in the bulk MgB₂ superconductor is obtained to change from 1.63 × 10^?7 to 2.58 × 10^?7 cm² s^?1. The maximum diffusion coefficient is observed for the sample prepared at 850 °C for 1 h whereas the minimum one is noted for the sample annealed at 850 °C for 2 h, confirming that the annealing-time of 1 h is the best ambient to improve the mechanical, microstructural and superconducting properties of the samples produced.     

Tensile properties of Cu/Sn–58Bi/Cu soldered joints subjected to isothermal aging

The effects of isothermal aging on the tensile properties of Cu/Sn–58Bi/Cu soldered joints were investigated. Experimental results show that the scallop-shaped Cu₆Sn₅ and planar Cu₃Sn formed at the interface between solder and Cu substrate during reflowing and aging. The thickness of the intermetallic compounds (IMCs) increased almost linearly with the square root of aging time, and aging at 120 °C yielded a much faster growth of the IMCs layer than that of samples aged at 100 °C. The IMCs growth rate constants were 6.02 × 10^?18 and 1.85 × 10^?18 m² s^?1 for solder joints aged at 120 and 100 °C, respectively. The tensile strength of the Sn–58Bi/Cu soldered joints decreased slightly with the increasing aging time and temperature. The failure was dominated by the mixed fracturing in both the solder and the Cu₆Sn₅ grains irrespective of their thermal aging conditions. However, the fracture pattern tended to transform from ductile to brittle with increasing aging time and temperature. The Bi segregation and voids were observed around the Cu/Cu₃Sn interface as the long term aging at high aging temperature was carried out, which resulted in reduction of tensile strength of solder joints.     

Low-temperature sintered pollucite ceramic from geopolymer precursor using synthetic metakaolin

In this article, pollucite ceramic with high relative density and low coefficient of thermal expansion (CTE) was prepared from Cs-based geopolymer using synthetic metakaolin. Crystallization and sintering behavior of the Cs-based geopolymer together with thermal expansion behavior of the resulted pollucite ceramic were investigated. On heating at 1200 °C for 2 h, the amorphous Cs-based geopolymer completely crystallized into pollucite based on crystal nucleation and growth mechanism. Selected area diffraction analysis and XRD results confirmed the resulted pollucite ceramic at room temperature was pseudo-cubic phase with superlattice structure. Compared with Cs-based geopolymer using natural metakaolin, geopolymer using synthetic metakaolin in this article showed a much lower viscous sintering temperature range, which started at 800 °C, reached a maximum value of ?7.47 × 10^?4/°C at 1121.9 °C, and ended at 1200 °C. Cesium volatilization appeared only when temperature was above 1250 °C. Therefore, densified pollucite ceramic can be prepared from Cs-based geopolymer using synthetic metakaolin without cesium volatilization. Abnormal thermal shrinkage of pollucite ceramic was observed at temperature range from 25.3 to 54.6 °C because of pseudo-cubic to cubic phase transition, and its average CTE was 2.8 × 10^?6/°C from 25 to 1200 °C.     

Ba(Zn1/3Ta2/3)O3 ceramics reinforced high density polyethylene for microwave applications

The effect of Ba(Zn_1/3Ta_2/3)O₃ (BZT) ceramic filler on the dielectric, mechanical and thermal properties of high density polyethylene (HDPE) matrix have been investigated. The dispersion of BZT particles in the matrix was varied up to 0.45 volume fraction (V_f)_. The SEM images confirmed the increase in connectivity between the filler particles with the increase in filler loading. All the composites showed excellent densification (>99 %) with relatively low moisture absorption (<0.04 wt%). The dielectric properties of the composites were investigated at 1 MHz, 5 GHz and at 10 GHz. The relative permittivity and the dielectric loss were found to increase as a function of BZT loading. Different theoretical models were used to predict the relative permittivity at 10 GHz. Effective medium theory gave the best correlation with the experimental results. An enhancement in the thermal conductivity (TC) and a reduction in the coefficient of linear thermal expansion (CTE) were achieved with filler loading. A slight decrease in the tensile strength was also observed with BZT loading. At 10 GHz, 0.45 V_f BZT reinforced HDPE showed a low relative permittivity (ε_r = 8.2) and a low dielectric loss (tanδ = 1.6 × 10^?3) with good thermal (TC = 1.4 W m^?1 K^?1, CTE = 92 ppm/°C) and mechanical (tensile strength = 18 MPa) properties.     

Thermal conductivity improvement of copper–carbon fiber composite by addition of an insulator: calcium hydroxide

The effects of adding calcium hydroxide (Ca(OH)₂) to a copper–CF (30 %) composite (Cu–CF(30 %)) were studied. After sintering at 700 °C, precipitates of calcium oxide (CaO) were included in the copper matrix. When less than 10 % of Ca(OH)₂ was added, the thermal conductivity was similar to or higher than the reference composite Cu–CF(30 %). A thermal conductivity of 322 W m^?1 K^?1 was measured for the Cu–Ca(OH)₂(3 %)–CF(30 %) composite. The effects of heat treatment (400, 600, and 1000 °C during 24 h) on the composite Cu–Ca(OH)₂(3 %)–CF(30 %) were studied. At the lower annealing temperature, CaO inside the matrix migrated to the interface of the copper matrix and the CF. At 1000 °C, the formation of the interphase calcium carbide (CaC₂) at the interface of the copper and CFs was highlighted by TEM observations. Carbide formation at the interface led to a decrease in both thermal conductivity (around 270 W m^?1 K^?1) and the coefficient of thermal expansion (CTE (10.1 × 10^?6 K^?1)).     

Effect of sintering temperatures on properties of BaO–B<Subscript>2</Subscript>O<Subscript>3</Subscript>–SiO<Subscript>2</Subscript>–Al<Subscript>2</Subscript>O<Subscript>3</Subscript> glass/silica composites for CBGA package

BaO–B₂O₃–SiO₂–Al₂O₃ (BBSA) glass/silica composites synthesized by solid-state reaction method were developed for CBGA packages, and the effects of sintering temperature (900–950 °C) on the phase transformation, microstructure, thermal, mechanical and electrical properties were investigated. XRD results show that the major phases quartz and cristobalite, and the minor phase BaSi₂O₅ are detected in BBSA composites. Furthermore, it was found that the quartz phase transforms to cristobalite phase at 930–940 °C. The formation of cristobalite phase with higher coefficient of thermal expansion (CTE) led to the increase of CTE value of BBSA composites. However, excessive cristobalite phase content would degrade the mechanical properties and the linearity of thermal expansion of the ceramics. BBSA composites sintered at 920 °C exhibited excellent properties: low dielectric constant and loss (ε_r = 6.2, tanδ = 10^?4 at 1 MHz), high bending strength (179 MPa), high CTE (12.19 ppm/°C) as well as superior linearity of the thermal expansion.     

Synthesis and characterization of borosilicate glass/β-spodumene/Al<Subscript>2</Subscript>O<Subscript>3</Subscript> composites with low CTE value for LTCC applications

Glass?+?ceramic composites based on low-softening-point borosilicate (BS) glass, β-spodumene and Al₂O₃ were produced in this work. The influence of ceramic filler composition on the microstructure, sintering quality, mechanical properties, thermal properties and dielectric properties of composites were studied. XRD and DSC indicated that both kinds of ceramic filler as well as the BS glass maintained their characteristics after sintering. The addition of β-spodumene would decrease the coefficient of thermal expansion (CTE) value of composites to match with silicon well. The better wetting behavior between β-spodumene and BS glass would lead to better sintering quality, microstructure and dielectric properties for composites containing more β-spodumene. With appropriate Al₂O₃ content, the flexural strength of composites could be enhanced. Composite with 45 wt% BS glass, 30 wt% β-spodumene and 25 wt% Al₂O₃ sintered at 875 °C showed good properties which meet the requirements of low temperature co-fired ceramic applications: dense microstructure with high relative density of 96.27%, proper CTE value of 3.57 ppm/°C, high flexural strength of 156 MPa, low dielectric constant of 6.20 and low dielectric loss of 1.9?×?10^?3.