共查询到18条相似文献,搜索用时 440 毫秒
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为了满足双目立体视觉以及多通道视频成像等应用场合对微型化的需求,提出了一种双CMOS成像器同步影像传感系统的设计方法。系统同步获取两个通道的CMOS图像并通过一路视频接口以相同帧率输出影像。系统以CPLD为核心器件,采用乒乓操作实现了对双通道视频数据的存储与传输,并对相应通道的图像以奇数帧和偶数帧的方式输出。CMOS成像器的配置以及数据传输采用模块化的结构设计,使系统的稳定性和灵活性大大提高。实验表明,系统具有良好的显示效果。 相似文献
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基于CMOS摄像头与FPGA的位置检测系统设计 总被引:1,自引:1,他引:0
提出采用CMOS数字摄像头采集并提取黑色胶条位置来控制冷却转鼓速度的方法.系统以FPGA作为核心控制器,采用两片SRAM进行乒乓操作,FPGA根据CMOS摄像头输出的同步信号,将采集到的图像信息存储到一片SRAM中,同时读取另一片SRAM中的图像数据并进行图像处理,黑色胶条位置检测采用简单的灰度阈值二值化方法.给出了部分采集图像及仿真结果.采集图像显示,CMOS摄像头成像质量满足工程要求.仿真结果表明,系统实现了SRAM的乒乓操作,并完成了黑色胶条位置检测.系统与冷却鼓连接,实际运行可靠. 相似文献
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高速数字视频处理系统中,为了缓解恒速的视频编解码与变速的DSP图像处理过程之间的矛盾, 常采用乒乓缓存结构作为图像数据输入/输出缓冲器。探讨了乒乓缓存结构的原理及特点,并以高速、大容量的SRAM以及CPLD器件为基础,设计了一种适应于高速DSP图像处理系统的乒乓缓存结构,其特点是速度快、所需器件少,易于与DSP器件接口。 相似文献
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高速DSP图像处理系统中的乒乓缓存结构研究 总被引:16,自引:0,他引:16
高速数字视频处理系统中,为了缓解恒速的视频编解码与变速的DSP图像处理过程之间的矛盾,常采用乒乓缓存结构作为图像数据输入/输出缓冲器。探讨了乒乓缓存结构的原理及特点,并以高速、大容量的SRAM以及CPLD器件为基础,设计了一种适应于高速DSP图像处理系统的乒乓缓存结构,其特点是速度快、所需器件少,易于与DSP器件接口。 相似文献
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针对嵌入式LCD控制器存在读写帧缓存冲突这一关键性问题,在分析比较两种常见解决方案基础上,提出了一种新的解决方案.设计并实现了一种新的嵌入式LCD控制器.引入时分复用技术解决了读写帧缓存的冲突问题;利用状态转移机制实现了读写SRAM操作.对LCD控制器内部SRAM接口模块的组成结构和工作原理进行了分析,并在Quartu... 相似文献
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作为与逐行方式相对应的隔行方式在视频编码中仍有着相当多的应用,通过对隔行方式下xvid开源程序中P帧运动补偿问题的校正,阐述了MPEG-4 P帧运动补偿的一般过程.并对基于帧预测(frame-predicted)的帧间宏块(interMB)运动矢量预测因子的求取进行了介绍,在此基础上,阐明了基于场预测(field-predicted)的帧间宏块上、下半场运动矢量预测因子的计算.给出了帧预测宏块、场预测宏块半象素插值的程序实现,进而对逐行与隔行方式下P帧运动补偿的实现做出较为全面的对比分析. 相似文献
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Cangsang Zhao Bhattacharya U. Denham M. Kolonsek J. Lu Y. Yong-Gee Ng Nintunze N. Sarkez K. Varadarajan H.D. 《Solid-State Circuits, IEEE Journal of》1999,34(11):1564-1570
An 18-Mbit CMOS pipeline-burst cache SRAM achieves a 12.3-Gbyte/s data transfer rate with 1.54-Gbit/s/pin I/O's. The SRAM is fabricated on a 0.18-μm CMOS technology. The 14.3×14.6-mm2 SRAM chip uses a 5.59-μm2, six-transistor cell. Circuit techniques used for achieving high bandwidth include fully self-timed array architecture, segmented hierarchical sensing with separated global read/write bitlines in different metal layers, a high-speed data-capture technique, a reduced-swing output buffer, and a high-sensitivity, high-bandwidth input buffer 相似文献
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A 10000 frames/s CMOS digital pixel sensor 总被引:4,自引:0,他引:4
Kleinfelder S. SukHwan Lim Xinqiao Liu El Gamal A. 《Solid-State Circuits, IEEE Journal of》2001,36(12):2049-2059
A 352×288 pixel CMOS image sensor chip with per-pixel single-slope ADC and dynamic memory in a standard digital 0.18-μm CMOS process is described. The chip performs "snapshot" image acquisition, parallel 8-bit A/D conversion, and digital readout at continuous rate of 10000 frames/s or 1 Gpixels/s with power consumption of 50 mW. Each pixel consists of a photogate circuit, a three-stage comparator, and an 8-bit 3T dynamic memory comprising a total of 37 transistors in 9.4×9.4 μm with a fill factor of 15%. The photogate quantum efficiency is 13.6%, and the sensor conversion gain is 13.1 μV/e-. At 1000 frames/s, measured integral nonlinearity is 0.22% over a 1-V range, rms temporal noise with digital CDS is 0.15%, and rms FPN with digital CDS is 0.027%. When operated at low frame rates, on-chip power management circuits permit complete powerdown between each frame conversion and readout. The digitized pixel data is read out over a 64-bit (8-pixel) wide bus operating at 167 MHz, i.e., over 1.33 GB/s. The chip is suitable for general high-speed imaging applications as well as for the implementation of several still and standard video rate applications that benefit from high-speed capture, such as dynamic range enhancement, motion estimation and compensation, and image stabilization 相似文献
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Shyh-Yih Ma Liang-Gee Chen 《Solid-State Circuits, IEEE Journal of》1999,34(10):1415-1418
A complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) camera chip with direct frame difference output is reported in this paper. The proposed APS cell circuit has in-pixel storage for previous frame image data so that the current frame image and the previous frame image can be read out simultaneously in differential mode. The signal swing of the pixel circuit is maximized for low supply voltage operation. The pixel circuit occupies 32.2×32.2 μm2 of chip area with a fill factor of 33%. A 128×98 element prototype camera chip with an on-chip 8-bit analog-to-digital converter has been fabricated in a 0.5-μm double-poly double-metal CMOS process and successfully tested. The camera chip consumes 56 mW at 30 frames/s with 3.3 V power supply 相似文献
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Dosaka K. Konishi Y. Hayano K. Himukashi K. Yamazaki A. Iwamoto H. Kumanoya M. Hamano H. Yoshihara T. 《Solid-State Circuits, IEEE Journal of》1992,27(11):1534-1539
A 4-Mb cache dynamic random access memory (CDRAM), which integrates 16-kb SRAM as a cache memory and 4-Mb DRAM into a monolithic circuit, is described. This CDRAM has a 100-MHz operating cache, newly proposed fast copy-back (FCB) scheme that realizes a three times faster miss access time over with the conventional copy-back method, and maximized mapping flexibility. The process technology is a quad-polysilicon double-metal 0.7-μm CMOS process, which is the same as used in a conventional 4-Mb DRAM. The chip size of 82.9 mm2 is only a 7% increase over the conventional 4-Mb DRAM. The simulated system performance indicated better performance than a conventional cache system with eight times the cache capacity 相似文献
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In this article an object tracking CMOS sensor is presented. The architecture incorporates photo detection devices and pixel level processing elements for capturing and processing the image data and extracting the object's coordinates. The edges of the image scene are extracted by in-pixel edge detectors and the region (object) of interest, selected by the user, is segmented using a switch network. Coordinates of the desired region are obtained by extracting the geometric centre of the region. Tracking of the selected object is then performed by automatic reselection of the region using the updated coordinates. The proposed design presents less sensitivity to threshold adjustments than binarisation techniques. The sensor has been designed as a 64 × 64 pixel VLSI CMOS chip in the 0.35 μm standard CMOS technology. The proposed structure is analysed with regard to its operation in the presence of mismatches and noise. Features of the sensor are reported and compared with some previous object tracking designs. Because the power dissipation is small, the chip is ideal for low-power applications. 相似文献
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McIntyre H. Wendell D. Lin K.J. Kaushik P. Seshadri S. Wang A. Sundararaman V. Ping Wang Song Kim Hsu W.-J. Hee-Choul Park Levinsky G. Jiejun Lu Chirania M. Heald R. Lazar P. Dharmasena S. 《Solid-State Circuits, IEEE Journal of》2005,40(1):52-59
A 4-MB L2 data cache was implemented for a 64-bit 1.6-GHz SPARC(r) RISC microprocessor. Static sense amplifiers were used in the SRAM arrays and for global data repeaters, resulting in robust and flexible timing operation. Elimination of the global clock grid over the SRAM array saves power, enabled by combining the clock information with array select signals. Redundancy was implemented flexibly, with shift circuits outside the main data array for area efficiency. The chip integrates 315 million transistors and uses an 8-metal-layer 90-nm CMOS process. 相似文献