氮掺杂和SnO_2纳米粒子负载对全固态对称型石墨烯超级电容器性能的影响（英文）

电极材料是影响超级电容器性能的主要因素。本研究采用溶剂热法合成石墨烯和氮掺杂石墨烯,通过简单的化学法在其表面负载SnO2纳米粒子。利用刮涂工艺在FTO玻璃表面制备石墨烯、SnO2/石墨烯、氮掺杂石墨烯和SnO2/氮掺杂石墨烯薄膜,并经400℃热处理。分别以制备的石墨烯基薄膜和PVA/H3PO4为电极和电解质组装对称型全固态超级电容器。测试结果表明,与石墨烯相比,氮掺杂石墨烯具有较大的晶粒尺寸、较高的比表面积和较高的超电容性能;SnO2纳米粒子负载可显著提高石墨烯和氮掺杂石墨烯的超电容性能。     

石墨烯/MnO2纳米片复合薄膜的制备及其超级电容性能研究

采用两步界面组装法制备石墨烯/MnO₂纳米片(GMTF)三维复合薄膜电极，研究了复合薄膜的电化学性能。结果表明，MnO₂的赝电容和石墨烯的双电层电容相互协调，使得GMTF复合薄膜材料比单一的MnO₂纳米片或者石墨烯材料具有更佳的电化学性能。在三电极体系中，GMTF电极的比电容在5mV/s时达156.54mF/cm²,远高于石墨烯(40.24mF/cm²)和MnO₂纳米片(69.03mF/cm²)。此外，在两电极体系中，基于GMTF复合薄膜的固态超级电容器也显示出较高的面积比电容(120.49mF/cm²)和质量比电容(204.22F/g)、优良的循环性能。在功率密度为39mW/cm³时，能量密度能够达到1.735mWh/cm³。     

Ag/TiO2纳米粒子的制备及其光催化降解苯酚的性能研究

采用溶胶-凝胶法制备了TiO₂和Ag/TiO₂纳米粒子,采用涂覆法制备了TiO₂和Ag/TiO₂纳米粒子光催化剂基板样品。使用XRD、SEM和拉曼光谱等手段,对TiO₂和Ag/TiO₂纳米粒子进行了晶格结构和表面形貌研究;通过UV-Vis,研究了TiO₂和Ag/TiO₂纳米粒子光催化剂基板样品在光催化反应器中对苯酚的光催化降解性能。结果表明,制备的TiO₂和Ag/TiO₂纳米粒子均为纯净的金红石相,二者表面形貌并没有明显区别,Ag单质粒子成功负载在TiO₂纳米材料上;Ag单质粒子的负载,明显增强了TiO₂纳米粒子对可见光的吸收,且Ag/TiO₂纳米粒子薄膜对苯酚的光催化降解性能明显优于TiO₂纳米粒子薄膜;在光催化降解1 h后,TiO₂纳米粒子薄膜仅催化降解了溶液中30%(质量分数)的苯酚,且光催化降解出现了饱和趋势,而Ag/TiO₂纳米粒子薄膜可催化降解溶液中50%(质量分数)的苯酚,且在光催化降解3 h后,仍未出现饱和趋势。     

对苯二酚增强纤维素/石墨烯电极的制备

目的 以纳米纤维素气凝胶为骨架,对苯二酚为增强相,并加入还原氧化石墨烯,制备纳米纤维素/还原氧化石墨烯复合电极薄膜,将其应用于超级电容器。方法 采用超声处理制备纳米纤维素/氧化石墨烯混合溶液;在高温高压的环境下,加入对苯二酚,采用水热合成法和冷冻干燥法制备纳米纤维素/还原氧化石墨烯气凝胶,并最终制成电极膜。结果 在纳米纤维素/还原氧化石墨烯复合气凝胶中,石墨烯可将纳米纤维素均匀包裹,形成三维多孔网络结构;纳米纤维素/还原氧化石墨烯复合电极具有良好的电化学性能,在1 mol/L的H2SO4溶液中,当电流扫描速率为1 mA/cm2时,超级电容器比面积电容高达1.621 F/cm2,且在2000次循环测试后,电容保留率为88.3％。结论 以纳米纤维素为基体制备的纳米纤维素/还原氧化石墨复合电极具有良好的电化学性能,可以用作超级电容器电极。     

石墨烯负载花球状二氧化锰复合材料制备及其电容性能研究

利用高锰酸钾与乙醇之间的氧化还原反应,在多孔石墨烯表面沉积纳米二氧化锰花球,获得了一种新型的复合电极材料。通过XRD,TG,SEM,TEM等分析手段确定了材料的晶体结构、化学成分、微观形貌特征。电化学性能测试表明:纳米二氧化锰花球具有优异的比电容,但是倍率性能和循环性能不足。通过在石墨烯表面负载纳米二氧化锰花球,能够显著增加石墨烯的比电容,同时改善纳米二氧化锰花球的倍率性能和循环性能。采用0.5mol/L K_2SO_4电解液,进行三电极循环伏安测试,复合电极材料在2mV·s^-1扫速下的比电容高达295F·g^-1,在1000mV·s^-1扫速下,比电容仍然可达102F·g^-1,同时100mV·s^-1,1000次循环后,电容循环保持率可达96.3%。这表明石墨烯负载花球状二氧化锰材料是一种极具潜力的超级电容器电极材料。     

表面活性剂对NiCo2S4纳米薄膜的电化学性能影响的研究

通过水热法在泡沫镍上成功制备了纳米结构的NiCo₂S₄薄膜, 主要包括前驱体制备及硫化过程。研究表明, 制备过程中添加不同种类的表面活性剂会对NiCo₂S₄薄膜的形貌、结构和电化学性能产生影响。添加表面活性剂后, NiCo₂S₄会自组装逐渐形成三维纳米片网状结构。在所有的NiCo₂S₄薄膜中, 添加SDS表面活性剂的薄膜表现出最高的比电容(在0.5 A/g电流密度下达到2893 F/g)、出色的倍率特性(在10 A/g电流密度下达到1890.6 F/g)和良好的循环稳定性(1000次循环后保持率为96.1%)。研究结果表明纳米网状的NiCo₂S₄是一种极具潜力的超级电容器电极材料。     

以MoS2修饰的3D打印还原石墨烯气凝胶制备微型超级电容器电极(英文)

微型超级电容器(MSCs)具有高的功率密度和卓越的循环性能,广泛的潜在应用,因而受到诸多关注。然而,制备具有高表面电容和能量密度的MSCs电极仍然存在挑战。本研究使用还原石墨烯气凝胶(GA)和二硫化钼(MoS₂)作为材料,结合3D打印和表面修饰方法成功构建了具有超高表面电容和能量密度的MSCs电极。通过3D打印技术,获得具有稳定宏观结构和GA交联微孔结构的电极。此外,采用溶液法在3D打印电极表面加载MoS₂纳米片,进一步提高了材料的电化学性能。具体而言,电极的表面电容达3.99 F cm^-2,功率密度为194μW cm^-2,能量密度为1 997 mWh cm^-2,表现出卓越的电化学性能和循环稳定性。这项研究为制备具有高表面电容和高能量密度的微型超级电容器电极提供了一种简单高效的方法,在MSCs电极领域具有重要的参考意义。     

碳布/聚吡咯储能包装膜材料的制备及表征

目的以甲壳素纳米纤维、多壁碳纳米管、碳布、吡咯为原料,制备柔性超级电容器复合电极薄膜。方法先利用化学氧化法提高碳布的表面粗糙度,再通过真空抽滤在碳布表面附着甲壳素纳米纤维和多壁碳纳米管,以增加碳布的负载空间,最后通过原位聚合吡咯来增加复合薄膜的电容性能。同时制备氧化碳布/聚吡咯复合薄膜作为对照组。结果制成的氧化碳布/甲壳素纳米纤维/多壁碳纳米管/聚吡咯复合薄膜在扫描速率为5 mV/s时,质量比电容达到了307 F/g,是氧化碳布/聚吡咯质量比电容(175 F/g)的1.75倍;在电流密度为2 A/g时,经过2000次循环后电容保留率为72.3%,库仑效率为73.8%。结论制备的氧化碳布/甲壳素纳米纤维/多壁碳纳米管/聚吡咯薄膜具有较高的比电容和循环稳定性,可以作为超级电容器电极材料应用于物联网行业的有源储能包装。     

氮掺杂碳纤维包覆石墨烯纳米片的构建及电容特性

以石墨烯纳米片为骨架,聚吡咯为碳源,设计构建氮掺杂碳纤维包覆石墨烯纳米片（NFGNs）复合材料。采用SEM,XRD,Raman,FTIR,XPS和BET对材料进行表征,结果表明：相互连通的氮掺杂碳纳米纤维均匀地包覆生长在石墨烯纳米片层表面;NFGNs-800复合材料的氮原子分数为11.53%,比表面积为477.65 m²·g^-1。电容特性测试结果表明：NFGNs-800电极材料的比电容为323.3 F·g^-1（1.0 A·g^-1）,且具有良好的倍率特性;NFGNs-800超级电容器在功率密度为10500 W·kg^-1时,能量密度为87.1 Wh·kg^-1;经过10000次恒流充放电循环后,比电容保持率95.9%,库仑效率保持在99%以上。     

智能包装系统用石墨烯基超级电容器的制备

目的 制备具有优异电化学性能的石墨烯/纳米纤维素/二氧化锰复合纤维水系超级电容器。方法 采用超声波分散处理制备氧化石墨烯/纳米纤维素/二氧化锰混合纺丝液;运用湿纺纺丝工艺制备氧化石墨烯/纳米纤维素/二氧化锰杂化纤维电极;通过氢碘酸还原和冷冻干燥处理构建具有多孔结构的石墨烯/纳 米纤维素/二氧化锰复合纤维电极;最后,将其组装成两电极水系超级电容器。结果 在石墨烯/纳米纤维素/二氧化锰复合纤维中,纳米纤维素的添加有效抑制了石墨烯片层的自聚集,并显著提升了复合纤维的亲水性和拉伸强度。二氧化锰的加入显著提升了纤维电极的电化学性能。得益于精心的实验设计,石墨烯/纳米纤维素/二氧化锰复合纤维的拉伸强度为338 MPa。组装后的水系超级电容器具有优异的电容性能和循环稳定性,在电流密度为0.1 mA/cm2时,面积电容为412.5 mF/cm2,循环1500次后,电容保持率为87%。结论 将切实可行的湿法纺丝策略与精心设计的电极结构相结合,制备的石墨烯/纳米纤维素/二氧化锰水系超级电容器为可穿戴便携式储能设备和智能包装能源供应系统的发展提供了良好的参考。     

A novel transparent pn junction based on indium tin oxides

p-Type indium-doped SnO₂ thin films were successfully fabricated on degenerate n⁺ indium tin oxide glass and quartz glass by sol gel dip-coating method. It was found from the X-ray diffraction results that indium-doped SnO₂ thin films were in the same rutile structure as that of undoped SnO₂. Hall effect measurement results showed that for In/Sn ratio≤0.33 and process temperature approximately 525 °C, the indium-doped tin oxide were p-type. The I–V curve measurement of a prototype transparent pn⁺ junction consisting of a layer of p-type indium-doped SnO₂ and a layer of degenerate n⁺ tin-doped indium oxide showed typical rectifying characteristics.     

Comparison of the electrochemical behavior of CeO2–SnO2 and CeO2–TiO2 electrodes produced by the Pechini method

CeO₂–SnO₂ and CeO₂–TiO₂ thin films were prepared by the Pechini method and their characteristics were compared, using a fractional factorial design to quantify the effect of five preparation variables. It was observed that CeO₂–SnO₂ electrodes show a greater electrochemical response than the CeO₂–TiO₂ films. The best intercalation charge densities were 18.11 and 9.91 mC/cm² for CeO₂–SnO₂ and CeO₂–TiO₂, respectively. Both films were optically inactive with transparencies, in most cases, higher than 90%.     

Excimer laser deposition and characteristics of tin oxide thin films

ArF excimer laser assisted chemical vapor deposition of tin oxide thin films on Si was obtained using SnCl₄ and O₂ as precursors. Experimental measurements revealed that the deposition rate increases with incident laser energy density. The composition, structure and ultraviolet-to-visible spectra of the thin films were investigated by means of XPS, SEM, XRD and a UV–Vis techniques. It was shown that SnO₂ and SnOCl₂ coexisted in the thin films, and SnOCl₂ was almost completely converted into SnO₂ after annealing. The SnO₂ thin films deposited at room temperature were amorphous in structure and the grain size of the films became larger after annealing. The transmittance of the SnO₂ thin films is above 90%, the absorption edge is 355 nm and the energy gap is 3.49 eV.     

Preparation of nanocrystalline SnO2 thin film coated Al2O3 ultrafine particles by fluidized chemical vapor deposition

Fluidized chemical vapor deposition (FCVD) technology was developed for coating SnO₂ thin film on Al₂O₃ ultrafine particles. TEM and HREM analysis found that SnO₂ films with different structures were deposited by controlling the coating temperature, reactant concentration, etc. Nanocrystalline SnO₂ film was coated at 573.15 K by gas phase reaction of SnCl₄ with H₂O. EPMA and EDS studies indicated that the distribution of SnO₂ inner and outer of the agglomerates was uniform. Nucleation and film deposition were coexisted mechanism during the FCVD coating process. The fraction of SnO₂ in the composite particles increased with increasing coating temperature, SnCl₄ concentration, and coating time. The mass fraction of SnO₂ in the composite particles increased strongly with the ratio of P_H2O and P_SnCl4 at low mole ratio of H₂O with SnCl₄, but increased little under the conditions of excess H₂O with respect to SnCl₄.     

Au修饰SnO2复合纳米材料的制备和气敏性能

以氯金酸和乙酰丙酮氯化锡为主要材料,通过一步水热法制备了SnO₂和Au修饰的SnO₂（Au/SnO₂）纳米粒子.使用TEM、EDS、XRD和XPS等手段对样品的形貌、组成及结构进行表征,研究了两种材料对乙醇的气敏性能.结果表明,两种纳米颗粒的尺寸都比较均一,平均直径约为9-12 nm;SnO₂为四方金红石结构,Au为面心立方结构;在Au/SnO₂样品中,Au与SnO₂的重量比为2.6%,Au元素主要以Au⁰的价态存在并含有少量的Au³⁺价态;与纯SnO₂纳米粒子相比,Au修饰可显著提高气敏元件对乙醇响应的灵敏度和选择性。     

异质复合结构纳米纤维SnO2/ZnO的制备及其气敏特性研究

采用静电纺丝法制备了多级中空结构的SnO₂纳米纤维, 然后将SnO₂纳米纤维置于90℃乙酸锌溶液中, 恒温水浴条件下, 在SnO₂纳米纤维上生长了ZnO纳米球, 形成了异质结构的SnO₂/ZnO复合纳米纤维。分别通过XRD、SEM、EDX和XPS等表征手段对异质复合纳米纤维SnO₂/ZnO材料的结构、形貌及元素含量进行了表征分析。异质结构的SnO₂/ZnO复合纳米纤维保持了SnO₂纳米纤维多级中空的纤维结构, SnO₂纳米纤维长度约为300 nm, 依附于SnO₂纤维表面的SnO₂纳米颗粒生长的ZnO纳米球直径为250~300 nm。采用静态气体测试系统对异质复合纳米纤维SnO₂/ZnO气敏元件的气敏性能进行了测试。测试结果表明: 异质复合纳米纤维SnO₂/ZnO气敏元件在最佳工作温度350℃下, 对(0.5~100)×10^-6丙酮具有优异的响应灵敏度、较好的选择性和长期稳定性。异质复合纳米纤维SnO₂/ZnO中存在于ZnO纳米球与SnO₂纳米颗粒间的N-N同型异质结导致复合材料晶界势垒高度的降低, 改善了电子与空穴的输运特性, 促使SnO₂/ZnO异质复合纳米纤维的吸附能力大大增强, 从而改善了SnO₂/ZnO元件的丙酮敏感特性。     

Structural, electrical and optical characteristics of SnO2:Sb thin films by ultrasonic spray pyrolysis

Antimony-doped tin oxide (SnO₂:Sb) thin films were fabricated by an ultrasonic spray pyrolysis method. The effect of antimony doping on the structural, electrical and optical properties of tin oxide thin films were investigated. Tin(II) chloride dehydrate (SnCl₂·2H₂O) and antimony(III) chloride (SbCl₃) were used as a host and a dopant precursor. X-ray diffraction analysis showed that the non-doped SnO₂ thin film had a preferred (211) orientation, but as the Sb-doping concentration increased, a preferred (200) orientation was observed. Scanning electron microscopy studies indicated that the polyhedron-like grains observed for the non-doped SnO₂ thin films became rounder and decreased in size with the Sb-doping concentration. The lowest resistivity (about 8.4 × 10^− 4 Ω·cm) was obtained for the 3 at.% Sb-doped films. Antimony-doping led to an increase in the carrier concentration and a decrease in Hall mobility. The transmittance level in the near infrared region was lowered with the Sb-doping concentration.     

功能化石墨烯多层膜载金催化剂的制备及其对肼的电催化氧化

以聚二甲基二烯丙基氯化铵功能化石墨烯(PDDA-GNs)和磷钼酸功能化石墨烯(PMo₁₂-GNs)为原料,利用层层自组装法制备了功能化石墨烯多层膜({PDDA-GNs/PMo₁₂-GNs}),以此多层膜为载体,通过恒电位电沉积法制备功能化石墨烯多层膜载金催化剂(Au/{PDDA-GNs/PMo₁₂-GNs}_n)。采用XRD、XPS和SEM等表征Au/{PDDA-GNs/PMo₁₂-GNs}_n催化剂的组成、结构和形貌。结果表明:实验成功制备了Au/{PDDA-GNs/PMo₁₂-GNs}_n催化剂,且多层膜载体改善了Au粒子的分散性。利用循环伏安(CV)、计时电流(It)和交流阻抗(EIS)等评价催化剂对肼氧化的电催化性能。结果表明,Au/{PDDA-GNs/PMo₁₂-GNs}_n催化剂使肼氧化的电催化活性和稳定性得到很大提高。与Au/玻碳电极(GCE)相比,Au/{PDDA-GNs/PMo₁₂-GNs}_n催化肼氧化反应的峰电流密度从0.46 mA/cm2提高到0.87 mA/cm2,600 s时的稳态电流密度是Au/GCE的2.5倍。      

Transparent conducting F-doped SnO2 thin films grown by pulsed laser deposition

Transparent conducting fluorine-doped tin oxide (SnO₂:F) films have been deposited on glass substrates by pulsed laser deposition. The structural, electrical and optical properties of the SnO₂:F films have been investigated as a function of F-doping level and substrate deposition temperature. The optimum target composition for high conductivity was found to be 10 wt.% SnF₂ + 90 wt.% SnO₂. Under optimized deposition conditions (T_s = 300 °C, and 7.33 Pa of O₂), electrical resistivity of 5 × 10^− 4 Ω-cm, sheet resistance of 12.5 Ω/□, average optical transmittance of 87% in the visible range, and optical band-gap of 4.25 eV were obtained for 400 nm thick SnO₂:F films. Atomic force microscopy measurements for these SnO₂:F films indicated that their root-mean-square surface roughness ( 6 Å) was superior to that of commercially available chemical vapor deposited SnO₂:F films ( 85 Å).     

Ti3C2TX MXenes材料在超级电容器中的应用研究进展

近年来人们对储能设备的需求加大,超级电容器因其优异的性能而受到研究者青睐。二维过渡MXenes材料是一种类似于石墨烯的二维片层材料,具有独特的结构和丰富的官能团,其中Ti₃C₂T_X MXenes材料因其具有优异的导电性、高比面积和高比电容等优点而被广泛用作超级电容器电极材料。然而,Ti₃C₂T_X材料存在易氧化和自堆叠等问题,作为电极材料需要对其性能进行改性和优化。本文主要介绍了Ti₃C₂TX材料常用的制备方法(如HF刻蚀、氟化盐刻蚀、碱刻蚀、电化学刻蚀等)及Ti₃C₂TX在超级电容器应用过程的性能改性研究现状,包括构建Ti₃C₂T_X多孔结构、进行表面修饰及制备Ti₃C₂T_X复合电极,并展望了Ti₃C₂