电极结构对高分子电阻型湿度传感器性能的影响

本文以聚苯乙烯磺酸钠为湿敏材料,制备了以金叉指电极为基底的高分子电阻型湿度传感器。研究了电极基片材料和叉指电极构型对传感器湿敏响应特性的影响。研究表明,采用多孔结构的基片材料可降低传感器电阻,增强湿敏膜与基片的结合能力从而提高传感器的稳定性;叉指电极构型对传感器的电阻大小有一定影响,增加电极中心线间距离使传感器的稳定性提高。     

有机/无机层状类钙钛矿(C12 H25 NH3)2 PbI4晶体及薄膜的制备与结构表征

介绍了有机/无机类钙钛矿(C12H25NH3)2PbI4的晶体和薄膜的制备,并采用了XRD、SEM、AFM和PL表征材料的结构、形貌及光学特性等.XRD实验表明制备的(C12 H25NH3)2PbI4晶体结晶度高.探索旋涂法制备工艺参数对薄膜结构的影响,在薄膜XRD中几乎只能观察到(0021)晶面的衍射峰,表明有机/无机类钙钛矿层沿平行与基片方向择优生长,SEM和AFM表明薄膜致密性较好,表面粗糙度较小.     

不同电极形式对掺镧钛酸铅铁电薄膜的介电性能的影响

采用射频磁控溅射技术在Si(100) 基底和Pt/Ti/SiO2/Si(100)基底上生长了掺镧钛酸铅[(Pb0.9,La0.1)TiO3, PLT10]铁电薄膜.用X射线衍射技术(XRD)研究了PLT10薄膜结晶性能.使用光刻工艺在Si(100) 基底的PLT10薄膜上制备了叉指电极,测试了PLT10薄膜的介电性能.在室温下,测试频率为1kHz时,PLT10薄膜的介电常数为386.而采用相同工艺条件制备的具有平行电极结构的PLT10薄膜, 其介电常数为365.但利用叉指电极测试的PLT10薄膜的介电常数和介电损耗随频率的下降比利用平行电极测试的PLT10薄膜的快些.这是因为叉指电极结构引入了更多的界面态影响的缘故.     

聚乙二醇-碳纳米管(PEG-CNTs)共聚物膜的制备及其微摩擦行为的研究

制备了聚乙二醇接枝碳纳管共聚物(PEG-CNTs)。通过红外光谱(FT-IR)。荧光光谱(FS)和透射电子显微镜(TEM)对共聚物进行了表征。利用旋涂技术以云母为基片制备了共聚物薄膜,采用原子力显微镜／摩擦力显微镜(AFM／FFM)研究了薄膜表面的形貌及微摩擦学行为。复合薄膜内的聚合物组分保证了膜的表面平整,坚硬的碳纳米管组分增强了薄膜的承载能力。     

纳米多孔PtTiCu催化剂的制备及其电化学性能的研究

采用单辊旋淬方法制备了成分和结构均匀的铂钛铜合金条带,通过脱合金方法进行选择性腐蚀得到了具有三维双连续孔洞结构的纳米多孔铂钛铜(np-PtTiCu)催化剂。将np-PtTiCu作为三电极测试体系中的工作电极,利用循环伏安法表征了其对甲酸、乙醇和甲醇的电催化氧化性能以及抗CO中毒能力,利用恒电位极化方法表征了其电催化稳定性。结果表明,np-PtTiCu催化剂比Pt/C催化剂具有更高的电催化活性,更好的抗CO中毒能力和稳定性,这些性能的改善与电极材料的多孔结构有关。     

化学气相沉积制备聚羟基功能化3,4-乙烯二氧噻吩膜及其性能研究

羟基功能化3,4-乙烯二氧噻吩(EDOT-OH)是3,4-乙烯二氧噻吩(EDOT)的重要衍生物.将EDOT-OH化学气相沉积在不同旋涂FeCl3氧化剂膜上,制备了系列PEDOT-OH膜.通过显微红外、拉曼光谱及场发射扫描电镜对PEDOT-OH膜结构及形貌进行了表征,考察了FeCl3旋涂溶液浓度与氧化剂膜的厚度、PEDOT-OH膜的厚度的对应关系,还将EDOT-OH沉积在金叉指电极上制备了有机磷传感器,并对其性能进行了初步评价,结果表明,在实验条件下,PEDOT-OH膜的厚度随着旋涂溶液浓度的增加而增加,其掺杂程度也随之增长.所制备的传感器具有良好的响应性、灵敏性和重复性.     

SnO2纳米薄膜氢敏特性的研究

采用溶胶-凝胶法制备了SnO2氢敏纳米薄膜.将0.1和0.05mol/L的SnO2溶胶溶液旋涂在Au叉指电极衬底而制得.通过测量在不同温度下SnO2纳米氢敏薄膜的电阻信号来表征其氢敏特性.当温度为250℃时,试样的灵敏度较低,并且响应时间也比较长.温度为300℃时试样的灵敏度较高,响应时间也明显缩短.0.05mol/L溶胶溶液旋涂10层制备的样品在300℃氢气浓度为2.0×10-3时,灵敏度达到了178,响应时间为3.5s.同时实验还发现试样对氢气的响应时间随着氢气浓度的增加先增大再减小.     

六氟异丙醇功能化石墨烯的制备及其在化学传感器上的应用

通过石墨烯的重氮盐反应,将4-(六氟-2-羟基异丙基)苯胺(HFIPA)引入到石墨烯表面,集成到叉指电极上制备得到新型石墨烯基气体传感器,并引入对氨基苯甲酸(PABA)表征接枝密度,通过神经毒剂模拟物——甲基膦酸二甲酯(DMMP)对传感器进行灵敏性检测。结果表明,成功制备的HFIPA功能化石墨烯最低可检测到312 ppb浓度的气体,检测灵敏度和信噪比增强,是一种优良的具有潜在价值的气体传感器。     

碳气凝胶/四氧化三钴复合材料的制备及电化学性能

采用电化学沉积法,以碳气凝胶(CA)为基底沉积氢氧化钴(Co(OH)2),并热处理制备碳气凝胶/四氧化三钴(CA/Co3O4)复合电极材料。采用XRD,SEM对样品的结构和微观形貌进行表征。采用循环伏安,恒电流充放电测试,交流阻抗测试对样品的电化学性能进行了表征和测试。研究结果表明,采用电化学沉积法制备的CA/Co3O4复合电极材料,在电流密度0.5和5 A/g时,其质量比容量分别为1 020和646 F/g。可见Co3O4的复合,能够很大程度的提升电化学性能。     

反应磁控溅射沉积氧化铜薄膜及其电化学性能研究

以金属铜为靶材,氧气为反应气体,采用射频磁控溅射法在不同温度的不锈钢基片上制备了氧化铜薄膜电极.采用X射线衍射(XRD)和原子力显微镜(AFM)分别对薄膜的组成和形貌进行了表征分析.电化学测试表明,在基片温度为室温条件下沉积得到的薄膜电极比300℃基片温度沉积得到的薄膜电极首次放电容量高,达到785μAh/(cm2·μm),但循环100次后后者放电容量较高.用交流阻抗法测得锂离子在氧化铜薄膜中的扩散系数为2.46×10-15cm2/s.     

纳米晶ZnFe2O4薄膜的制备及其丙酮气体敏感性能研究

以尖晶石结构ZnFe2O4材料为研究对象,以可溶性无机盐为原料,利用溶胶-凝胶技术在Al2O3基片上制备了ZnFe2O4薄膜,研究其对低浓度丙酮气体的敏感特性.通过DTA,TG,XRD及SEM分析手段对制膜过程及薄膜形态进行了表征.研究发现,采用柠檬酸作为络合剂的无机盐原料溶液-溶胶-凝胶(ISG)工艺,在700℃烧结温度下,可以得到覆盖良好、结构均匀、晶粒尺寸约在100nm的尖晶石结构ZnFe2O4薄膜.通过该薄膜对丙酮气敏特性测试表明,ZnFe2O4材料对丙酮具有较好的敏感性,在550℃的操作温度下,材料对丙酮气体敏灵敏度为8,响应与恢复时间小于5s.     

Recent research situation in tin dioxide nanomaterials: synthesis,microstructures, and properties

This review article summarizes the new research in solid-state physical chemistry understanding of the microstructure characteristics of semiconductor tin oxide thin films made in the last years in our group. The work mainly focuses on the fabrication technology of semiconductor tin oxides thin films by using pulsed laser deposition (PLD) as well as the application of this technology on new micro- and nanostructured materials. It is an interdisciplinary work that integrates the areas of physics, chemistry and materials science.     

SiO2层上沉积的纳米多晶硅薄膜及其特性

采用低压化学气相沉积(LPCVD)系统以高纯SiH4为气源,在p型10.16 cm<100>晶向单晶硅衬底SiO2层上制备纳米多晶硅薄膜,薄膜沉积温度为620℃,沉积薄膜厚度分别为30 nm、63 nm和98 nm.对不同薄膜厚度的纳米多晶硅薄膜分别在700℃、800℃和900℃下进行高温真空退火.通过X射线衍射(XRD)、Raman光谱、扫描电子显微镜(SEM)和原子力显微镜(AFM)对SiO2层上沉积的纳米多晶硅薄膜进行特性测试和表征,随着薄膜厚度的增加,沉积态薄膜结晶显著增强,择优取向为<111>晶向.通过HP4145B型半导体参数分析仪对沉积态掺硼纳米多晶硅薄膜电阻I-V特性测试发现,随着薄膜厚度的增加,薄膜电阻率减小,载流子迁移率增大.     

Effect of thickness on nanostructured SnO2 thin films by spray pyrolysis as highly sensitive H2S gas sensor

Nanostructured SnO2 thin films were prepared by spray pyrolysis technique onto glass substrates with different thickness by varying quantity of precursor solution. The structural, optical and electrical properties of these films have been studied. The crystallographic structure of the films was studied by X-ray diffraction (XRD). It is found that the films are tetragonal with (110) orientation. The grain size increases with thickness. Atomic Force Microscopy (AFM) showed that the nanocrystalline nature of the films with porous nature. The grain size increased 14 to 29 nm with increase in film thickness. The studies on the optical properties show that the direct band gap value decreases from 3.75 to 3.50 eV. The temperature dependence of the electrical conductivity was studied. The activation energies of the films are calculated from the conductance temperature characteristics. The nanostructured SnO2 thin films were used as sensing layers for resistive gas sensors. The dependence of gas sensing properties on the thickness of SnO2 thin films was investigated. The gas response of the SnO2 thin films towards the H2S gas was determined at an operating temperature of 150 degrees C. The sensitivity towards H2S gas is strongly depending on surface morphology of the SnO2 thin films.     

Microstructural and transport properties of LaNiO3−δ films grown on Si (111) by chemical solution deposition

Electrically conductive LaNiO_3−δ (LNO) thin films with typical thickness of 200 nm were deposited on Si (111) substrates by a chemical solution deposition method and heat-treated in air at 700 °C. Structural, morphological, and electrical properties of the LNO thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), field-emission scanning electron microscopy (FEG-SEM), and electrical resistivity ρ(T). The thin films have a very flat surface and no droplet was found on their surfaces. The average grain size observed by AFM and FEG-SEM was approximately 100 nm in excellent agreement with XRD data. The ρ(T) data showed that these thin films display a good metallic character in a large range of temperature. These results suggest the use of this conductive layer as electrode in the integration of microelectronic devices.     

Metal-oxide-Semiconductor capacitors fabricated by layer-by-layer nanoassembly and microfabrication

Metal oxide semiconductor (MOS) capacitors were fabricated by electrostatic layer-by-layer self-assembly (LbL-SA) combined with a modified lift-off technique. The MOS capacitors were built on both n-type and p-type silicon substrates. The numbers of silicon dioxide (SiO2) nanoparticle layers were varied to characterize the electrical performance of MOS capacitors. Unlike the conventional process, LbL-SA allows us to deposit the thin films for a semiconductor device with a lower temperature, lower cost, and shorter processing time. The stability of the silica insulation layers was also investigated. Atomic force microscopy (AFM) served to monitor the film quality of the self-assembled thin films.     

Design and synthesis of polymetallic nanoparticles and their catalytic applications

High-temperature hydrogen reduction reactions enable the synthesis and processing of binary metal oxide composite nanoparticles starting from titanium, ruthenium, and silicon, while the use of a surface modifier and an organic surfactant enables the synthesis of catalytic thin films from binary semiconductor oxides. Surface characterization by XRD, SEM, TEM, AFM, Raman spectroscopy, and BET measurements indicate that the incorporation of binary oxide particles into the semiconductor materials altered the surface properties and morphology of the nanoparticles while the surface modifier and organic surfactant loading can be experimentally adjusted to obtain thin films of varying morphological characteristics.     

The gas sensitivity of a metal-insulator-semiconductor field-effect-transistor based on Langmuir–Blodgett films of a new asymmetrically substituted phthalocyanine

Langmuir–Blodgett (LB) films of an amino-tri-tert-butyl-phthalocyanine (AmBuPc) were fabricated as the semiconductor thin layer for a metal-insulator-semiconductor field-effect-transistor (MISFET). The gas sensitivity of the low-conducting LB films MISFET was measured in a NO₂ atmosphere at different concentration. The results showed that the gas concentration and the drain-source current of the AmBuPc gas sensor satisfy Langmuir adsorption isotherm.     

Characteristics of organic-inorganic hybrid plasma polymer thin films for low-κ ILD applications

This study investigated the effects of plasma power and tetraethylorthosilane (TEOS) to cyclohexene ratios on low-κ organic-inorganic hybrid plasma polymer thin films deposited on silicon (100) substrates. These films were deposited using a plasma enhanced chemical vapor deposition (PECVD) method, in addition to the electrical and mechanical properties of the resulting composites. Cyclohexene and TEOS were used as organic and inorganic precursors, respectively, with hydrogen and argon as precursor bubbler gases. Furthermore, additional argon was used as a carrier gas. The as-grown polymerized thin films were analyzed using ellipsometry, Fourier-transform infrared (FT-IR) spectroscopy, atomic force microscopy (AFM), transmission electron microscopy (TEM), and X-ray diffraction (XRD). The ellipsometry results showed the thickness of the hybrid thin film, and the FT-IR spectra showed that the hybrid polymer thin films were completely fragmented and polymerized between cyclohexene and TEOS. AFM results showed that polymer films with a smooth surface could be grown under various deposition conditions, while TEM and XRD showed that the hybrid thin film was an amorphous plasma polymer thin film without porosity. In addition, current-voltage (C-V) curves were prepared to calculate the dielectric constants. Post-annealing was applied to investigate the thermal stability of hybrid plasma polymer thin films in the hardness, Young's modulus, thermal shrinkage, and the dielectric constant at 400 °C.     

Electrical properties of C19H20N2O4SW based molecular-materials thin films prepared by electrodeposited technique

Semiconductor molecular-material thin films of Fischer carbene tungsten(0) have been prepared by electro-deposition in the electrochemical module of the atomic force microscope (AFM). This use of the AFM is proposed as a more efficient way to generate molecular materials, as it permits thin-film synthesis to be monitored and manipulated before characterization. The films thus obtained were characterized by infrared (FTIR), AFM and energy dispersive spectroscopy. The molecular material thin films exhibit the same intra-molecular bonds and the chemistry composition as the original compounds. The effect of temperature on conductivity was also measured in these samples: its behavior found as pertaining to a semiconducting material. The activation energies of thin films are determined from Arrhenius plots with these energies being within the range from 0.4 to 1.82 eV. The electrical transport properties for the thin films were determined by their chemical structure.