氮对金刚石缺陷发光的影响

利用低温显微荧光光谱研究了IIa型、Ib型、Ia型金刚石的缺陷发光性质. 研究发现, 随着氮含量增加, 间隙原子及空位逐渐被氮原子所束缚, 从而使得GR1中心、533.5 nm及580 nm中心等本征缺陷发光减弱, 而氮-空位复合缺陷(NV中心)及523.7 nm中心等氮相关缺陷发光增强. 高温退火后, 间隙原子与空位可以自由移动, IIa型金刚石中出现了NV⁰中心, Ib型金刚石中只剩下了NV中心, Ia型金刚石中氮原子之间发生团聚, 出现了H3中心及N3中心. 另外, 氮作为施主原子, 有利于负电荷缺陷的形成, 如3H 中心、NV^- 中心.     

高温高压下氮氢协同掺杂对{100}晶面生长宝石级金刚石的影响

在压力为5.5–6.2 GPa, 温度为1280–1450 ℃的条件下, 利用温度梯度法详细考察了氮氢协同掺杂对100晶面生长宝石级金刚石的影响. 实验结果表明伴随合成腔体内氮、氢浓度的升高, 合成条件明显升高, 金刚石生长V形区间上移; 晶体的红外光谱中与氮相关的吸收峰急剧增强, 氮含量可达2000 ppm, 同时位于2850 cm^-1和2920 cm^-1对应于 sp³杂化 C–H 键的对称伸缩振动和反对称伸缩振动的红外特征峰逐渐增强, 表明晶体中既有高的氮含量, 同时又含有氢. 对晶体进行电镜扫描发现, 氮氢协同掺杂对晶体形貌影响明显, 出现拉长的{111}面, 且晶体表面上有三角形生长纹理. 拉曼测试表明, 晶体的峰位向高频偏移、半峰宽变大, 说明氮、氢杂质的进入对晶体内部产生了应力. 本文成功地以{100}晶面为生长面合成出高氮含氢宝石级金刚石单晶, 在探究氮氢共存环境下金刚石生长特性的同时, 也可为理解天然金刚石的形成机理提供帮助.     

硼硫协同掺杂金刚石的高压合成与电学性能研究

FeNiMnCo-C体系中,在压力6.5 GPa、温度1280—1300℃的极端物理条件下,采用温度梯度法成功合成了硼(B)、硫(S)协同掺杂金刚石大单晶.通过傅里叶红外光谱测试对高温高压所制备金刚石中的杂质进行了表征.借助霍尔效应对典型金刚石样品的电输运性能进行了测试,测试结果表明:硼硫协同掺杂有利于提高p型金刚石的电导率,而且硼硫在合成体系中的添加比例可以决定金刚石的p, n特性.此外,第一性原理计算结果表明,合成体系中不同比例的硼硫协同掺杂对金刚石的p, n特性以及电导率有着直接的影响,计算结果与实验测试结果相吻合.     

Effects of Mg on diamond growth and properties in Fe–C system under high pressure and high temperature condition

Diamond crystal crystallized in Fe–Mg–C system with Archimedes buoyancy as a driving force is established under high pressure and high temperature conditions. The experimental results indicate that the addition of the Mg element results in the nitrogen concentration increasing from 87 ppm to 271 ppm in the diamond structure. The occurrence of the {100}plane reveals that the surface character is remarkably changed due to the addition of Mg. Micro-Raman spectra indicate that the half width of full maximum is in a range of 3.01 cm~(-1)–3.26 cm~(-1), implying an extremely good quality of diamond specimens in crystallization.     

高温高压处理对褐色CVD钻石谱学特征的影响

目前CVD法合成单晶钻石是超硬材料科学和宝石学关注的热点之一,该方法合成的单晶钻石常带有褐色调。通常采用高温高压法（HPHT）提高褐色CVD钻石的色级和透明度,在前期HPHT处理褐色CVD钻石实验基础上,选出颜色改善明显的三颗样品,对其处理前后谱学特征进行对比。采用紫外-可见吸收光谱、红外光谱、光致发光光谱、三维荧光光谱、激光拉曼光谱以及X射线摇摆曲线进行分析。结果表明,褐色和深褐色样品褪色温度较高,处理后样品紫外-可见吸收光谱吸收系数明显减小,透明度明显提高。样品中红外与近红外光谱显示,在1 332 cm-1处的吸收峰与N+中心有关,该中心是褐色CVD钻石常见特征。在3 124 cm-1处吸收峰与NVH0缺陷中心有关,该峰在CVD钻石和HPHT处理钻石中常见。另外在2 700~3 200 cm-1范围变化的一组吸收峰,与C-H键伸缩振动有关。高温对CVD钻石含H基团影响较大,在5~6 GPa压力下处理温度在1 500~1 700 ℃范围,会在近红外波段4 673,6 352,7 354,7 540,7 804和8 535 cm-1出现一组吸收峰,可指示样品经过较高温度处理。目前针对CVD钻石以及经过HPHT处理的CVD钻石近红外波段的论述较少,该研究可以为鉴定CVD钻石及HPHT处理CVD钻石提供依据。综合光致发光光谱和三维荧光光谱分析,处理后样品NV-缺陷比例减小,SiV-中心缺陷比例增加。在5~6 GPa压力下,仅当处理温度高于1 500 ℃时,样品三维荧光光谱在λ_ex/λ_em=500 nm/575 nm处荧光峰增强,在λ_ex/λ_em=490 nm/550 nm处荧光峰消失,从某种意义上该峰位变化可指示样品经过较高温度处理。物相分析结果显示,HPHT处理后CVD钻石在1 332 cm-1处拉曼位移半高宽和XRD摇摆曲线半高宽均减小,表现出了较好的一致性,说明经HPHT处理的褐色CVD钻石结晶质量变优。     

改色处理紫红色钻石的光谱学特征及鉴定方法

以市场上销售的国内改色紫红色圆刻面型钻石为研究对象,通过对其光谱学特征进行分析,确定了此类紫红色改色处理钻石的鉴定。样品颜色呈现不同饱和度的紫红色,净水称重法测试比重为3.52,放大观察,样品DR-2与DR-3的部分刻面光泽较弱,显示了未被重新抛光的严重烧蚀区域,石墨化沿内应力断裂明显,其表面可能经过高温高压处理。365nm长波紫外下,均呈现蓝色、橙红色、黄色和绿色混合的白垩状荧光外观,无磷光现象,而天然紫红色钻石为蓝色荧光或无荧光。宽频诱导发光图像仪GV5000深紫外下均呈现橙红色和蓝色混合荧光,无磷光现象。红外光谱中红外区均显示集合体氮相关的A中心和B中心,归类为IaAB型,且具有H1a辐照退火相关的特征峰,红外光谱近红外区均显示H1b,H1c辐照退火相关的特征峰与H₂中心的特征峰。紫外可见近红外分光光度计均显示明显的NV-中心,H₂中心和806 nm吸收峰,400～460和570 nm宽带处反射率的变化分别与N₃中心和NV0中心相关,明显的NV-中心在天然紫红色钻石中极少发现,H₂中心指示可能经过高温高压处理,可见光范围内对红光和蓝光的吸收较弱,所以呈现为紫红色外观。三维荧光光谱和光致发光光谱均显示出N₃,H₃,H₄,NV0, NV-相关的发光中心,N₃贡献蓝色荧光,H₃和H₄贡献黄绿色荧光,NV0与NV-贡献橙红色荧光。综合分析,三颗样品均为天然成因的钻石,后期经过高温高压,辐照,退火等多重处理,其紫红色主要由N₃中心,NV0中心与NV-中心共同贡献。     

添加Fe(C5H5)2合成氢掺杂金刚石大单晶及其表征

在Ni₇₀Mn₂₅Co₅-C体系中添加含氢化合物Fe(C₅H₅)₂作为新型氢源, 利用温度梯度法, 在压力为5.5-6.0 GPa、温度为1280-1400 ℃的条件下, 成功合成出氢掺杂的宝石级金刚石大单晶. 通过傅里叶显微红外光谱发现, 随着Fe(C₅H₅)₂添加量的增加, 合成晶体中与氢相关的对应于sp³杂化C-H键的对称伸缩振动和反对称伸缩振动的红外特征峰2850和2920 cm^-1逐渐增强, 而晶体中氮含量却逐渐减少. 通过合成晶体的拉曼光谱分析发现, 金刚石的拉曼峰伴随Fe(C₅H₅)₂的添加向高频偏移, 这表明氢的进入在金刚石内部产生了压应力. 观察扫描电子显微镜图像发现, 在低含量Fe(C₅H₅)₂添加时晶体表面平滑, 而高含量添加时晶体表面缺陷增多, 且呈现出气孔状. 使用新的添加剂Fe(C₅H₅)₂作为氢源, 合成出含氢宝石级金刚石单晶, 丰富了金刚石单晶中对氢的研究内容, 也可为理解天然金刚石的形成机理提供帮助.     

蓝宝石中子辐照色心的研究

研究了中子辐照对蓝宝石(α-Al2O3)单晶体缺陷形成及光学性能的影响,对采用提拉法与温度梯度法生长的蓝宝石晶体进行中子辐照,通过对比辐照前后的吸收及荧光光谱变化,发现辐照使得蓝宝石晶体内形成F、F^ 和F2^ 色心缺陷,但不同方法生长的晶体样品中色心浓度差异明显。其中提拉法样品的F心浓度要高于温度梯度法样品,而温度梯度法样品中F^ 色心浓度要高于提拉法样品。分析表明,这与两种方法生长的晶体中杂质含量差异有关。通过研究辐照后晶体的热致发光谱发现提拉法与温度梯度法生长的蓝宝石晶体分别在145℃与150℃有明显的热致发光出现,采用初始上升法计算出两种方法生长的晶体的热致发光陷阱深度分别为1．15eV及1．05eV。     

掺Yb硅酸盐玻璃的热漂白性能研究

采用传统高温熔融法制备了掺Yb硅酸盐玻璃, 玻璃组成为 60SiO₂-12Al₂O₃-28CaO-1.0 mol%Yb₂O₃. 将玻璃分成两组, 一组经总剂量3 kGy的Co⁶⁰γ辐射源辐射, 另一组做空白对照. 然后测试了玻璃未辐射、辐射后及热漂白后的吸收谱和近红外发光谱. 实验结果表明: 一定的热处理会使得玻璃在辐射过程中产生的色心缺陷发生分解, 即辐射后的玻璃在300–900 nm波段的吸收系数显著地降低了, 在400 nm处未经辐射、经3 kGy辐射以及热漂白后的玻璃吸收系数分别是0.93, 2.9, 1.89 cm^-1. 另外, 玻璃的近红外发光强度明显增强, 在1028 nm处未经辐射、经3 kGy辐射以及热漂白后的玻璃近红外发光相对强度分别是588, 261, 436, 从而极大地改善了玻璃的光学性能. 所以一定的热处理可以使辐射后的玻璃产生热漂白的现象. 研究结果为进一步发展抗辐射玻璃材料提供了新的实验依据.     

硼氢协同掺杂Ib型金刚石大单晶的高温高压合成与电学性能研究

在压力6.0 GPa和温度1600 K条件下, 利用温度梯度法研究了(111)晶面硼氢协同掺杂Ib型金刚石的合成. 傅里叶红外光谱测试表明: 氢以sp³杂化的形式存在于所合成的金刚石中, 其对应的红外特征吸收峰位分别位于2850 cm^-1和2920 cm^-1处. 此外, 霍尔效应测试结果表明: 所合成的硼氢协同掺杂金刚石具有p型半导体材料特性. 相对于硼掺杂金刚石而言, 由于氢的引入导致硼氢协同掺杂金刚石电导率显著提高. 为了揭示硼氢协同掺杂金刚石电导率提高的原因, 对不同体系进行了第一性原理理论计算, 计算结果表明其与实验结果符合. 该研究对金刚石在半导体领域的应用有重要的现实意义.     

掺氮金刚石的光学吸收与氮杂质含量的分析研究

研究了金刚石光学特性与氮杂质及其含量的关系,从传统的金刚石氮含量标定方法出发,修正了金刚石氮含量的计算方法,并且用添加叠氮化钠的原料在六面顶压机上进行了高氮含量金刚石的制备研究.随着体系中叠氮化钠的添加,金刚石红外吸收谱在800—1400 cm^-1范围的吸收强度相对于基线不断升高,这表明金刚石中存在的氮含量在随着叠氮化钠添加而升高,金刚石在单声子区域吸收强度大大增强.用含叠氮化钠的原料制备的金刚石呈现绿色、墨绿色甚至黑色,颜色的深浅依赖于叠氮化钠添加的多少.傅里叶红外光谱测试结果表明 关键词： 金刚石 光学材料 杂质 红外     

Synthesis of N-type semiconductor diamonds with sulfur,boron co-doping in FeNiMnCo-C system at high pressure and high temperature

A series of diamonds with boron and sulfur co-doping were synthesized in the Fe Ni Mn Co-C system by temperature gradient growth(TGG) under high pressure and high temperature(HPHT). Because of differences in additives, the resulting diamond crystals were colorless, blue-black, or yellow. Their morphologies were slab, tower, or minaret-like. Analysis of the x-ray photoelectron spectra(XPS) of these diamonds shows the presence of B, S, and N in samples from which N was not eliminated. But only the B dopant was assuredly incorporated in the samples from which N was eliminated. Resistivity and Hall mobility were 8.510 ?·cm and 760.870 cm~2/V·s, respectively, for a P-type diamond sample from which nitrogen was eliminated. Correspondingly, resistivity and Hall mobility were 4.211×10~5 ?·cm and 76.300 cm~2/V·s for an N-type diamond sample from which nitrogen was not eliminated. Large N-type diamonds of type Ib with B–S doping were acquired.     

钼酸铅晶体中F型色心电子结构的理论计算

运用相对论性的密度泛函离散变分(DV-Xα)方法模拟计算PbMoO₄晶体中可能存在的F型色心的电子结构.结果表明,F,F⁺心在PbMoO₄晶体的禁带中引入了施主能级,其光学跃迁能分别是2.141,2.186 eV,即F,F⁺心能分别引起PMO晶体中581,567 nm的吸收,该吸收与PbMoO₄晶体中580 nm的吸收峰对应.因此,可推断F型色心能引起PMO晶体中由光色效应引起的580 nm吸收.     

Photoemission from diamond and fullerene films for advancedaccelerator applications

The photoemission properties of thin diamond and fullerene films were investigated for advanced accelerator applications, using subpicosecond laser pulses at three different wavelengths (650, 325, and 217 nm). The quantum efficiency (QE) obtained at 217 nm with a boron-doped, p-type, (111) polycrystalline diamond film (2.6·10 ^-4) was only five times smaller than the QE obtained with a mirror polished copper sample (1.3·10^-3) but more than nine times larger than the QE obtained with a pure diamond film or with natural diamond monocrystals. Similar results were obtained for the two-photon electron yields at 325 mm. The electron yields obtained with pure fullerene films were small and comparable to the ones observed with the pure diamond samples. With 650 mn pulses, the damage threshold of the (110) Type IIa natural diamond monocrystal (9.38·10⁴ μJ cm^-2), defined here as the fluence leading to an onset of ion emission, was 25 times larger than the damage threshold for a copper sample (3.75·10³ μJ cm^-2). The damage threshold of the boron-doped sample at the same wavelength was two times larger than that of copper. Damage thresholds with 325 nm pulses were lower, and with 217 mn pulses ion emission was observed at all fluences probably attributed to ablation of surface hydrocarbon contaminants. Results show that high-quality high-boron concentration diamond films could be a good candidate for high-RF electron guns     

Different effect of NiMnCo or FeNiCo on the growth of type-Ⅱa large diamonds with Ti/Cu as nitrogen getter

In order to synthesize high-quality type-Ⅱa large diamond, the selection of catalyst is very important, in addition to the nitrogen getter. In this paper, type-IIa large diamonds are grown under high pressure and high temperature(HPHT) by using the temperature gradient method(TGM), with adopting Ti/Cu as the nitrogen getter in Ni_(70)Mn_(25)Co_5(abbreviated as NiMnCo) or Fe_(55)Ni_(29)Co_(16)(abbreviated FeNiCo) catalyst. The values of nitrogen concentration(N_c) in both synthesized high-quality diamonds are less than 1 ppm, when Ti/Cu(1.6 wt%) is added in the FeNiCo or Ti/Cu(1.8 wt%) is added in the NiMnCo. The difference in solubility of nitrogen between both catalysts at HPHT is the basic reason for the different effect of Ti/Cu on eliminating nitrogen. The nitrogen-removal efficiency of Ti/Cu in the NiMnCo catalyst is less than in the FeNiCo catalyst. Additionally, a high-quality type-Ⅱa large diamond size of 5.0 mm is obtained by reducing the growth rate and keeping the nitrogen concentration of the diamond to be less than 1 ppm, when Ti/Cu(1.6 wt%) is added in the FeNiCo catalyst.     

山东产大颗粒高温高压合成钻石的多种谱学方法研究

山东济南中乌新材料有限公司利用六面顶油压机生产出大颗粒钻石,为了掌握这些合成钻石的品质及与天然钻石的区分方法,采用宽频诱导发光光谱仪（GV5000）、红外光谱仪、钻石特征光谱检测仪（PL5000）、激光诱导击穿光谱仪和X射线能谱仪,对该公司生产的225粒无色、蓝色和黄色高温高压（HPHT）合成钻石进行检测,并与天然钻石对比。HPHT合成钻石样品的晶形以（111）晶面和（100）晶面共存的聚形为主导。原石切磨成圆钻形成品的出成率在20%~67%之间,净度级别为VVS-P,颜色级别为D-H。通过GV5000分析,三种颜色样品均可观察到立方八面体生长结构发光图案,无色HPHT合成钻石为强蓝色荧光和磷光,发光峰位于495 nm,与晶格中的顺磁氮有关;蓝色HPHT合成钻石为蓝-绿蓝色荧光和蓝色磷光,发光峰位于501 nm,与晶格中的顺磁氮、硼有关;黄色HPHT合成钻石为弱绿色荧光和磷光,显示556和883 nm Ni+相关发光峰,这些特征可与天然钻石相区分。红外光谱分析表明,无色HPHT合成钻石在1 332~1 100 cm-1无明显氮相关吸收,在2 802 cm-1有B0相关吸收,为含有少量硼的Ⅱa型;蓝色HPHT合成钻石位于1 294 cm-1有与B-相关的强吸收,归属为Ⅱb型;黄色HPHT合成钻石位于1 130和1 344 cm-1有与孤氮相关的明显吸收,归属为Ⅰb型。PL5000光致发光光谱显示,三种颜色HPHT合成钻石可检测到659,694,707,714和883 nm等镍相关缺陷发光峰。相比之下,无色和黄色天然钻石通常为Ⅰa型,具有1 282和1 175 cm-1等聚合氮的红外光谱吸收,光致发光光谱通常可检测到415 nm（N₃）零声子线,由孤氮、硼和镍等缺陷导致的光谱特征极为罕见。因此,红外光谱和光致发光光谱特征可作为重要的鉴别依据。激光诱导击穿光谱仪检测到无色HPHT合成钻石的出露包裹体主要成分为Fe。X射线能谱分析显示,对于含包裹体较多的样品,无色和蓝色HPHT合成钻石可检测到Fe,黄色HPHT合成钻石可检测到Fe和Ni,为其中包裹体的成分,这可作为HPHT合成钻石鉴定性特征。综上所述,通过GV5000超短波紫外荧光和磷光测试,配合红外光谱和光致发光光谱特征,结合包裹体成分特征,可以有效区分该研究的合成钻石和天然钻石。     

退火对Pb辐照Al2O3单晶发光特性的影响

研究了230MeV的²⁰⁸Pb²⁷⁺辐照Al₂O₃样品及随后在600,900,1100K高温条件下退火后的光致发光特性。从辐照样品的测试结果可以清楚地看到在波长为390,450nm处出现了强的发光峰。辐照量为1×10¹³ions/cm²时,样品的发光峰最强。经过600K退火2h后测试结果显示,380nm发光峰剧烈增强,而其他发光峰显示不明显。在900K退火条件下,380nm的发光峰开始减弱,而在360,510nm出现了明显的发光峰,至到1100K退火完毕后380nm的发光峰完全消失,而360,510nm的发光峰相对增强。从被辐照样品的FTIR谱中看到,波数在460~510cm^-1间的吸收是振动模式,经过离子辐照后,吸收带展宽,随着辐照量的增大,Al₂O₃振动吸收峰消失,说明Al₂O₃振动模式被完全破坏。1000~1300cm^-1之间为Al—O—Al桥氧的伸缩振动模式,辐照后吸收带向高波数方向移动,说明其振动模式受到影响。辐照剂量较小的样品,损伤程度相对较低,经退火晶化后,振动模式基本恢复到单晶状态;辐照剂量较高的样品,损伤程度大,退火处理后表面变得较粗糙,振动模式并未出现,说明结构破坏严重。     

LUMINESCENCE OF Bi3+ and Eu2+ DOUBLE CENTERS DOPED IN CaS HOST

In this work, double-center.doped luminescent material CaS:Bi³⁺, Eu²⁺ was made via flux NH₄Cl by sintering in excess sulfur environment. The sample had a purplish red net luminescent color. Excitation spectra at both red, 650 nm and blue, 487 nrn were taken. The red emission from Eu²⁺ center was mainly come from the 4f⁶5d¹ absorption in the CaS host. The blue emission from the Bi³⁺ center on the other hand showed no big difference from the singly doped CaS:Bi³⁺ materials in excitation spectrum. Emission spectra were obtained at excitaton of 270nm and 300nm. Stokes shift was moved about 20-30nm, under different point excitation. Emission peaks of both Bi³⁺ and Eu²⁺ centers appeared at 463nm, 642.5nm by 270nm excitation and 487 nm, 620 nm by 300 nm excitation respectively. After-glow decay cures were also obtained and the shapes of decay curves are similar and it is due to the single hole-trap system by lattice defects.     

Structure and luminescence of a-plane GaN on r-plane sapphire substrate modified by Si implantation

We show the structural and optical properties of non-polar a-plane GaN epitaxial films modified by Si ion implantation. Upon gradually raising Si fluences from 5×10¹³ cm^-2 to 5×10¹⁵ cm^-2, the n-type dopant concentration gradually increases from 4.6×10¹⁸ cm^-2 to 4.5×10²⁰ cm^-2, while the generated vacancy density accordingly raises from 3.7×10¹³ cm^-2 to 3.8×10¹⁵ cm^-2. Moreover, despite that the implantation enhances structural disorder, the epitaxial structure of the implanted region is still well preserved which is confirmed by Rutherford backscattering channeling spectrometry measurements. The monotonical uniaxial lattice expansion along the a direction (out-of-plane direction) is observed as a function of fluences till 1×10¹⁵ cm^-2, which ceases at the overdose of 5×10¹⁵ cm^-2 due to the partial amorphization in the surface region. Upon raising irradiation dose, a yellow emission in the as-grown sample is gradually quenched, probably due to the irradiation-induced generation of non-radiative recombination centers.     

Synthesis and characterizations of boron and nitrogen co-doped high pressure and high temperature large single-crystal diamonds with increased mobility

We synthesized and investigated the boron-doped and boron/nitrogen co-doped large single-crystal diamonds grown under high pressure and high temperature (HPHT) conditions (5.9 GPa and 1290℃). The optical and electrical properties and surface characterization of the synthetic diamonds were observed and studied. Incorporation of nitrogen significantly changed the growth trace on surface of boron-containing diamonds. X-ray photoelectron spectroscopy (XPS) measurements showed good evident that nitrogen atoms successfully incorporate into the boron-rich diamond lattice and bond with carbon atoms. Raman spectra showed differences on the as-grown surfaces and interior between boron-doped and boron/nitrogen co-doped diamonds. Fourier transform infrared spectroscopy (FTIR) measurements indicated that the nitrogen incorporation significantly decreases the boron acceptor concentration in diamonds. Hall measurements at room temperature showed that the carriers concentration of the co-doped diamonds decreases, and the mobility increases obviously. The highest hole mobility of sample BNDD-1 reached 980 cm²·V^-1·s^-1, possible reasons were discussed in the paper.