浅谈陀螺仪的寿命预测

陀螺仪的可靠性寿命预测对整个惯导系统的可靠性估计非常重要．本文首先给出了陀螺寿命以及陀螺寿命预测的基本概念，接着对陀螺寿命预测的可行性进行了简单分析，随后对陀螺寿命预测的发展现状做了介绍，最后提出了对陀螺寿命预测的几点看法。     

微波反射光电导衰退技术在InGaAs台面结器件工艺中的应用

微波反射光电导衰退法是一种非接触式的半导体材料少子寿命表征手段，本文用微波反射光电导衰减法测试了台面InGaAs光电器件制备中各单项工艺（刻蚀、腐蚀、硫化）中InCaAs样品的少子寿命分布，结果表明，离子刻蚀使得样品少子寿命降低，非均匀性增大，而湿法腐蚀能够在一定程度上修复离子刻蚀带来的损伤，损伤区域中心的少子寿命增大，寿命分布也更加均匀，硫化钝化能够进一步提高损伤区域少子的寿命，却使寿命分布均匀性变差。可见，微波反射光电导衰减法可以简单无损地得到样品少子寿命分布，对工艺改进具有重要的指导意义。     

InP中皮秒快速现象

利用测量瞬态反射谱的方法，探索了掺硫、铁、锌以及非掺杂的ＩｎＰ中载流子寿命，观察到非掺杂ＩｎＰ中载流子寿命最长约６０ｐｓ，掺锌ＩｎＰ中载流子寿命３８ｐｓ居中，掺硫和掺铁的寿命最短约１ｐｓ掺硫、铁和锌的ＩｎＰ中载流子寿命下降，是由于掺杂引入了复合中心，这一结果已被喇曼光谱所证实。     

微波反射光电导衰退技术在InGaAs台面结器件工艺中的应用

微波反射光电导衰退法是一种非接触式的半导体材料少子寿命表征手段，本文用微波反射光电导衰减法测试了台面InGaAs光电器件制备中各单项工艺(刻蚀、腐蚀、硫化)中InCaAs样品的少子寿命分布，结果表明，离子刻蚀使得样品少子寿命降低，非均匀性增大，而湿法腐蚀能够在一定程度上修复离子刻蚀带来的损伤，损伤区域中心的少子寿命增大，寿命分布也更加均匀，硫化钝化能够进一步提高损伤区域少子的寿命，却使寿命分布均匀性变差。可见，微波反射光电导衰减法可以简单无损地得到样品少子寿命分布，对工艺改进具有重要的指导意义。     

武器装备的全寿命周期可靠性预计

阐述了周全地考虑武器装备寿命周期可靠性的必要性，给出了全寿命周期可靠性预计方法和模型。以某机载武器为例，预计其全寿命周期可靠性，并分析、改进了原设计方案，使其满足规定的可靠性指标。     

He—Ne激光器寿命的研究

本文阐述了影响Ｈｅ－Ｎｅ激光管寿命的各种因素，以及延长器件寿命的措施。文中特别提出了低熔点玻璃封接的结构和工艺，试验表明激光器的存放寿命可达４年以上。     

加热炉管剩余寿命红外热像评估系统

研制了一套建立在Larson-Millcr参数外推剩余寿命估算方法和红外热像温度检测基础上的快速、非接触在线估算炉管剩余寿命的软件系统，用于炉管的规范管理与在线剩余寿命评估。该系统建立了炉管的温度、剩余寿命、材料常数、工艺参数、壁厚和外径等数据库。不仅可以快速在线估算炉管的剩余寿命，而且可以对加热炉的工作状态进行在线评估与诊断，为及时制定加热炉的故障排除方案提供了一种新方法。     

影响He-Ne激光器寿命的因素和铟过渡密封工艺

（一）多年来我们在He-Ne激光管的寿命问题上做了一些研究工作，对影响寿命的一些因素我们做了一些实验研究，并结合兄弟单位的情况，对影响激光器寿命的各主要因素进行了探讨，提出了一些合理的结构和有关数据。     

InGaAs／GaAs应变量子阱中的激子发光动力学

本文详细测量并分析了ＩｎＧａＡｓ／ＧａＡｓ应变量子阱中的激子发光衰退特性，研究了激子发光寿命与Ｉｎ组分和阱宽的关系．发现Ｉｎ组分增大时，激子寿命变短，而发光寿命与阶宽的关系不大．文章分析了影响发光寿命的诸多因素，指出在ＩｎＧａＡｓ／ＧａＡｓ量子阱中，由合金无序造成的散射对激子发光寿命有重要的影响．     

氦氖激光管的工作寿命特性的研究

本文在理论上从电子元器件的特征寿命η所服从的逆幂律，分析导出了描述氦氖激光管工作寿命的以时间ｔ为自变量的威布尔分布函数；用图估和最好线性无偏估计（ＢＬＵＥ）两种方法处理寿命试验数据，结果都证实了氦氖激光管的工作寿命（特征寿命）服从逆幂律；最后给出了这种氦氖激光管的逆幂律方程式。     

基于点割集的无线带状传感网分布式寿命预测算法

无线带状传感网是一种典型传感网应用模式,现有的网络生存时间模型大多面向特定的布设模型和工作模式,不能直接应用于带状传感网寿命预测。该文提出一种基于点割集的带状网分布式寿命预测算法。该算法仅利用邻居节点的位置和剩余生存时间等局部信息求解点割集及局部网络生存时间,通过相邻节点间交互包含局部网络生存时间的信令,估计整个网络的剩余生存时间。仿真结果表明,与现有基于梯度的网络生命估计算法相比,该文算法能准确且实时地估计网络的生存时间。     

非均匀数据产生率的传感器网络的节能算法

无线传感器网络中的能量洞问题是影响网络寿命的关键因素之一.在基于环模型的多跳传感器网络中,通过优化所有环的传输距离可以有效地延长网络寿命.针对非均匀数据产生率的传感器网络,用建立环关系表的方式以搜索近似最优的传输距离从而延长网络寿命,在降低搜索(算法)复杂度的同时得到与最优解近似的结果.模拟实验证明了采用此节能算法的网...     

The Influence of Parasitic Effects on Injection-Level-Dependent Lifetime Data

A circuit simulation approach is employed to investigate the influence of various parasitic effects on injection-level-dependent lifetime data of samples containing p-n junctions. Simulations of the influence of shunts, localized recombination, edge recombination, and a combination of these on lifetime data are presented. The simulation shows that the nature of the parasitic effects can be qualitatively identified due to their different lifetime behaviors at various injection levels. It is demonstrated that the parasitic effects start to dominate the lifetime data at injection levels , and the lifetime behavior can look similar to Shockley-Read-Hall recombination in some cases. A range of case studies with experimental data and data fitting are presented. The case studies show that parasitic effects can interfere with lifetime-based experiments. In some cases, the understanding of the influence of parasitic effects leads to a reinterpretation of the lifetime behavior of the test devices.     

阵列化互连LED模组寿命分布的蒙特卡洛模拟

利用蒙特卡洛方法对阵列化互连LED模组的可靠寿命进行了模拟,假设分档后的大功率白光LED的正向电压符合正态分布,额定电流下的寿命符合对数正态分布,且寿命和电流、温度的关系符合Eying模型,研究了n×n(6≤n≤12)LED阵列的寿命分布.模拟结果表明,对于n×n LED阵列,寿命随LED数目的增加没有下降反而略有增加...     

An electromigration failure model for interconnects under pulsedand bidirectional current stressing

An electromigration failure model which can be used to project the electromigration lifetime under pulsed DC and AC current stressing has been reported. The experimental results indicate that different metallization systems (Al-2%Si, Al4%Cu/TiW, and Cu) show similar failure behaviors, which can be explained and predicted by this model. The pulsed DC lifetime is found to be longer than DC lifetime, and the AC lifetime is found to be very much longer. This recognition can provide significant relief to circuit designs involving metals carrying pulsed DC and AC currents, and allow a more aggressive design to improve circuit density and speed     

Impact of laterally non‐uniform carrier lifetime on photoconductance‐based lifetime measurements with self‐consistent calibration

The impact of laterally non‐uniform carrier lifetime on the determination of the lifetime from photoconductance‐based measurements, based on the self‐consistent method proposed by Trupke and Bardos, is investigated using a simple model. It is shown that the method can result in an overestimation of the mean lifetime, with the magnitude of the error mainly dependent on the distribution of the effective lifetime across the area sensed by the photoconductance coil. Although in many cases the error introduced will be relatively small (in the order of 5% or less), much larger errors can result in some cases, such as for samples that feature small areas with a significantly higher than average lifetime. The error can be eliminated through independent measurement of the sample optical properties. Experimental measurements confirm the model predictions. Copyright © 2012 John Wiley & Sons, Ltd.     

一种快速推算栅极氧化膜TDDB寿命的方法

提出了一种快速推算栅极氧化膜TDDB寿命的新方法.该方法可以用于对工艺的实时监控.通常情况下,为了得到栅极氧化膜在器件使用温度下的TDDB寿命,必须得到三个在一定温度下的不同电压下的TDDB寿命.然后使用一定模型(E模型或者1/E模型)和这个三个寿命推算出氧化膜在器件使用温度下的寿命.比较常用的是E模型.但是为了保证使用E模型推得的寿命的准确性,必须尽量使用较低电压下的寿命来推算想要的寿命.显然,为了获得低电压下的TDDB寿命,必须花费相当长的测试时间(甚至1个月).这对于工艺的实时监控来说,是不能接受的.文中提出一种新的推算栅氧化膜TDDB寿命的方法.运用该方法,可以快速、准确获得栅氧化膜的TDDB寿命,而花费的测试时间不到普通方法的1/1000000.在该方法中,巧妙地同时利用了1/E模型和E模型.     

One Method for Fast Gate Oxide TDDB Lifetime Prediction

提出了一种快速推算栅极氧化膜TDDB寿命的新方法.该方法可以用于对工艺的实时监控.通常情况下,为了得到栅极氧化膜在器件使用温度下的TDDB寿命,必须得到三个在一定温度下的不同电压下的TDDB寿命.然后使用一定模型(E模型或者1/E模型)和这个三个寿命推算出氧化膜在器件使用温度下的寿命.比较常用的是E模型.但是为了保证使用E模型推得的寿命的准确性,必须尽量使用较低电压下的寿命来推算想要的寿命.显然,为了获得低电压下的TDDB寿命,必须花费相当长的测试时间(甚至1个月).这对于工艺的实时监控来说,是不能接受的.文中提出一种新的推算栅氧化膜TDDB寿命的方法.运用该方法,可以快速、准确获得栅氧化膜的TDDB寿命,而花费的测试时间不到普通方法的1/1000000.在该方法中,巧妙地同时利用了1/E模型和E模型.     

A framework for optimal battery management for wireless nodes

The focus of this paper is to extend the lifetime of a battery powered node in wireless context. The lifetime of a battery depends on both the manner of discharge and the transmission power requirements. We present a framework for computing the optimal discharge strategy which maximizes the lifetime of a node by exploiting the battery characteristics and adapting to the varying power requirements for wireless operations. The complexity of the optimal computation is linear in the number of system states. However, since the number of states can be large, the optimal strategy can only be computed offline and executed via a table lookup. We present a simple discharge strategy which can be executed online without any table lookup and attains near maximum lifetime.     

Dynamic NBTI lifetime model for inverter-like waveform

In this paper, a simple yet accurate NBTI lifetime model has been formulated for a pMOSFET working in dynamic AC condition. The model is based on detailed dynamic NBTI (DNBTI) characterization for inverter-like waveform stress. The fitting parameters of the model can be readily obtained from the calibration of one-time DNBTI lifetime measurement for a small set of frequency/duty cycle matrix. After that, it can be employed to estimate the NBTI lifetime for a pMOSFET under any AC operating condition with reasonably good agreement. Additionally, it is shown that the lifetime enhancement by a shorter duty cycle is even more significant than that by a higher frequency. The application of the model to the lifetime estimation of circuits with multiple operation modes is also discussed.