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1.
随着网络传输数据的爆炸式增长,传统集成电路芯片面临着难以进一步提升交换速率及继续扩大容量等挑战。相较于传统电子芯片,硅基光子器件具有交换速度快、功耗低、带宽大和与CMOS工艺兼容性好等优点,可满足下一代全光交换网络、数据中心和高性能计算光互连的迫切需求,被视为在后摩尔时代突破芯片容量最具前途的解决方案,受到日益广泛关注。文章介绍了硅基光子芯片中光开关单元及阵列的技术原理和发展现状,重点论述了MZI型、MRR型开关单元,以及常见阵列拓扑结构,介绍了近年来大规模光开关阵列的国内外研究进展,讨论了未来硅基光开关及阵列研究中面临的主要问题和解决方法。  相似文献   

2.
硅基光波导及光波导开关的研究进展   总被引:10,自引:1,他引:9  
SiO2 光波导、重掺杂光波导、SOI光波导、合金光波导及聚合物光波导等低损耗硅基光波导的研究已取得了很大的进展,随着这些波导的硅基光开关不断研制出来,各种光开关结构也不断提出来了。为了解决硅的线性电光系数为零的问题,采用了多种方法,以获得强的线性电光效应,实现高速光开关。文章回顾了近十年来硅基光波导及光开关的研究进展。  相似文献   

3.
随着科技的发展,光纤通信大量使用,硅基光开关阵列的使用场景越来越多,当前基于硅基的光开关阵列技术得到了发展.但由于技术还不够成熟,光开关阵列中每个开关节点的控制参数还不能做到一致,需要的电压在4~6 V.为了能够准确控制和使用硅基光开关阵列,必须对硅基光开关阵列中的每个开关节点控制参数进行准确标定,标定其控制电压或电流.为了实现控制参数的高效标定,设计一种高效的硅基光开关阵列参数标定控制器.  相似文献   

4.
周攻艺  张彤  崔一平   《电子器件》2007,30(3):790-793
阐述了光波导真延时器件的工作原理及其在相控阵雷达中的应用,通过氟化聚酰亚胺聚合物条形光波导和光开关阵列的集成,提出了一种集成光波导开关阵列真延时模块的设计方案,将光波导和开关阵列集成在一个基片上,具有集成度高、体积小、成本低、一致性好、插入损耗小等诸多优点.并根据光开关的种类分析了光学真延时模块的拓扑结构,改进了光开关和光波导的组合模式.  相似文献   

5.
简要评述硅基光波导的结构,工艺及其器件,包括低损耗的硅基光波导,电光波导器件,红外波导探测器,氧化硅光回路等。  相似文献   

6.
评述硅基光子材料和器件的进展,包括硅二极管的受激发射、具有量子结构的RCE(谐振腔增进型)光电二极管、MOS高频光调制器、SOI光开关阵列和可调谐波长滤波器,重点介绍低插入损耗、快响应的SOI基热光波导开关阵列的最新结果.以SOI为基片,成功地研制出带有全内反射(TIR)镜的重排无阻塞型光开关阵列,并首次研制出16×16阻塞型光开关阵列.在1.55μm波段,插入损耗和偏振相关性随着器件长度的增加而略微增大.如果器件的末端镀上抗反射膜,插入损耗会降低2~3dB,这些器件的上升和下降时间分别为2.1和2.3μs.  相似文献   

7.
评述硅基光子材料和器件的进展,包括硅二极管的受激发射、具有量子结构的RCE(谐振腔增进型)光电二极管、MOS高频光调制器、SOI光开关阵列和可调谐波长滤波器,重点介绍低插入损耗、快响应的SOI基热光波导开关阵列的最新结果.以SOI为基片,成功地研制出带有全内反射(TIR)镜的重排无阻塞型光开关阵列,并首次研制出16×16阻塞型光开关阵列.在1.55μm波段,插入损耗和偏振相关性随着器件长度的增加而略微增大.如果器件的末端镀上抗反射膜,插入损耗会降低2~3dB,这些器件的上升和下降时间分别为2.1和2.3μs.  相似文献   

8.
光开关和光开关阵列技术的发展研究   总被引:4,自引:0,他引:4  
光开关与光开关阵列是DWDM光网络的关键器件,主要用来实现光层的路由选择、波长选择和淆交叉连接等功能,文中全面论述比较了光开关和光开关阵列技术。  相似文献   

9.
评述硅基光子材料和器件的进展,包括硅二极管的受激发射、具有量子结构的RCE(谐振腔增进型)光电二极管、MOS高频光调制器、SOI光开关阵列和可调谐波长滤波器,重点介绍低插入损耗、快响应的SOI基热光波导开关阵列的最新结果.以SOI为基片,成功地研制出带有全内反射(TIR)镜的重排无阻塞型光开关阵列,并首次研制出16×16阻塞型光开关阵列.在1.55pm波段,插入损耗和偏振相关性随着器件长度的增加而略微增大.如果器件的末端镀上抗反射膜,插入损耗会降低2~3dB,这些器件的上升和下降时间分别为2.1和2.3μs.  相似文献   

10.
光开关和光开关阵列技术的发展研究   总被引:7,自引:0,他引:7  
光开关与光开关阵列是DWDM光网络的关键器件,主要用来实现光层的路由选择、波长选择和光交叉连接等功能。文中全面论述比较了光开关和光开关阵列技术。  相似文献   

11.
SOI光波导是硅基光波导器件的基础,也是实现其它集成光学器件的基础。文章论述了SOI材料、SOI光波导以及SOI光波导开关的一些特性和研究进展。  相似文献   

12.
Transparent optical multichannel switches composed of liquid-crystal light modulator arrays and polarization beam routers composed of birefringent crystals are reported. For suppressing diffraction loss and stabilizing loss property, lens waveguide arrays are established in the switch body by inserting Fresnel lenslet arrays. The highly improved loss and crosstalk properties of the switch are confirmed  相似文献   

13.
Arrays of thermooptical digital switches for 1300 nm wavelength have been fabricated employing PECVD silica on silicon technology. The switches are based on mode sorting in asymmetric waveguide branches. An asymmetric layout of the waveguide branch/crossing leads to a defined zero-voltage state which is useful for protection switching in optical SDM-networks. The power consumption is reduced by heat flow optimization using silica and silicon microstructuring. The switch arrays are coupled to fiber ribbons  相似文献   

14.
We present the implementation of an optical space switching concept based on thermooptic beam steering in an arrayed waveguide grating. Individual addressing of heaters on the array waveguides enables flexible switching of input signals to output waveguide channels. The switch can be used either as a 1-to-8 switch or as multiple parallel 1-to-4, 1-to-3, or 1-to-2 switches. For the implementation we used high-refractive-index SiON-SiO2 planar waveguide technology, which allows the realization of compact devices using small bending radii. We achieved isolations of the “off'” channels with respect to the “on” channel of up to 29 dB for a 1-to-3 switch or better than 22 dB for all “off” waveguides for a 1-to-8 switch  相似文献   

15.
Optical switching can be performed by using optical amplifiers combined with a passive waveguiding network. Recently, most of the effort in optical amplifier switch modules have been focused on monolithic switches in which the entire device is fabricated on an InP substrate together with the semiconductor optical amplifiers (SOA's). In this paper, we investigate the use of SOA's with passive polymer waveguides to make hybrid switches of varying sizes. The optical amplifiers serve dual purposes, gating the signal and amplifying the signal. Amplification is needed in order to offset the losses associated with the passive waveguide elements as well as the losses from component misalignments in the switch module. Our analysis finds the largest switch module size that can be made with the architecture used. We also calculate the maximum number of switch modules which can be cascaded in order to retain a bit-error rate (BER) under 10-9  相似文献   

16.
A review is presented of electrooptic waveguide switch arrays with strong emphasis on those based on titanium-diffused lithium niobate waveguides. Crosspoint and array design considerations and performance are discussed as are waveguide technology limits. Switch array demonstrations are reviewed. Experimental demonstrations of switch arrays are described and particular parameters of the array, including insertion loss, crosstalk, and switching voltage achieved by several laboratories, are discussed and compared. Results of high-speed switch arrays are also described  相似文献   

17.
A 2×2 cross/bar polymer electro-optic(EO) routing switch is proposed,which is composed of two passive channel waveguides and two active EO polymer microrings with bending radius of only 13.76 μm.Detailed structure,theory and formulation are provided to characterize the output power of the switch.For obtaining fundamental mode propagation,small bending loss and phase-matching between channel waveguide and microring resonator(MRR) waveguide,the structural parameters are optimized under the wavelength of 1550 nm.Analyses and simulations on output power and output spectra indicate that a switching voltage of 5 V is desired to realize the exchange between cross state and bar state,the crosstalk under cross state and that under bar state are about 28.8 dB and 39.9 dB,respectively,and the insertion losses under these two states are about 2.42 dB and 0.13 dB,respectively.Compared with our four EO switches reported before,this device possesses ultra-compact size of 0.233 mm×0.233 mm as well as low crosstalk and insertion loss,and therefore it can serve as a good candidate for constructing large-scale optical routers or switching arrays in photonic network-on-chip(NoC).  相似文献   

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