High-frequency, low-crosstalk modulator arrays based on FTC polymersystems

A novel electro-optic polymer Furan TetraCyano Indane (FTC) has been utilised in the fabrication of low V_π, high-speed travelling-wave Mach-Zehnder modulator arrays. The modulators were realised with microstrip transmission lines that were optimised resulting in a line loss of 3.64 dB/cm at 40 GHz. Mach-Zehnder modulators based on this design with 1.6 cm interaction length resulted in devices with V_π<5 V and a reasonably fiat frequency response up to 40 GHz. Electrical crosstalk measurements were also conducted on adjacent modulators separated by 400 μm in a modulator array. Without the implementation of any crosstalk reduction techniques, the measurement results indicated a crosstalk level of <-40 dB in the frequency band between 0 and 40 GHz. These impressive results were a consequence of the low dielectric constant of the polymer material at microwave frequencies and of the small lateral dimensions of the microstrip lines     

Ultrashort laser: Lasing in MBE GaAs layer with perpendicular-to-film optical excitation and emission

Lasing was observed in a 4.5 μm thick GaAs MBE-grown heterostructure (0.2 μm Al0.42Ga0.58As, 4.1 μm GaAs, 0.21 μm AlGaAs). The laser was driven by pulses from a mode-locked Ar laser (514.5 nm) with a maximum of 20 W peak power in 100 ps long pulses focused to 25 μm. The lasing occured along the pump axis within a cavity defined by the coated AlGaAs surfaces.     

Fourier transformation using an electroabsorptive CCD spatial light modulator

The use of a GaAs CCD as a spatial light modulator is described and its application to coherent optical Fourier transformation is analyzed. In this device, the transmission through the two-dimensional buried-channel CCD may be electroabsorption modulated near the GaAs cutoff wavelength since the electric field in each storage well is controlled by the transferred charge. One of the primary advantages of this modulator is the ability to electrically address the device at high speed. Analysis of the two-dimensional modulator with a silicon CCD detector array yields a projected dynamic range approximately equal to the number of modulator array elements. For arrays containing greater than 1000 elements, detector performance and nonuniformities can limit the maximum range to 30-40 dB. The device can also be optically addressed, and in this mode of operation it has a comparable dynamic range to the electrically addressed structure with an optical write energy an order of magnitude lower than liquid crystal or photorefractive light valves. An alternative mode of device operation is a waveguide mode in which the light propagates along an epitaxial layer and is modulated as it passes under a one-dimensional CCD. The detection is done by a second linear CCD. The higher modulation efficiency results in a dynamic range approximately one hundred times the number of elements but is again limited to 30-40 dB because of detector response and nonuniformities.     

Efficient electrooptic modulator in InGaAlAs/InP optical waveguides

A single heterostructure InGaAlAs/InP phase modulator utilizing the quadratic electrooptic effect (QEO) is reported for the first time. The calculated value of the QEO coefficient from the measurements is 3.7×10^-19 m²/V² at 80 meV below the band edge. In addition, the linear electrooptic effect (LEO) coefficient is estimated to be 1.2×10^-12 m/V, which is comparable to that of GaAs. The propagation loss of a single mode ridge waveguide is in the range of 1.5-1.7 dB/cm, which is better than the previously reported value in this material system. The measured single mode phase shifts are 5.5 and 2.8°/V mm for TE and TM polarizations, respectively. These values are the largest reported so far in an InGaAlAs system     

A high-frequency GaAs optical guided-wave electrooptic interferometric modulator

The characteristics and frequency response of a GaAs monolithic guided-wave interferometric modulator operating at 1.3 μm are presented. The interfetometer consists of three-guide coupler input and output sections and single-mode p+-n--n+ slab-coupled rib-waveguide active arms. The measured electrical bandwidth of an interferometer with 2 mm long active arms was 2.2 GHz and limited by parasitics. This corresponds to a small signal optical bandwidth of ≈ 3.0 GHz when the interferometer is biased in a linear portion of the optical output versus voltage characteristics. Reduction of parasitics should result in a substantial increase in the bandwidth of these devices.     

All-optical photonic switches using integrated inverted asymmetricFabry-Perot modulators and heterojunction phototransistors

InGaAs/GaAs(100) multiple-quantum-well-based inverted cavity asymmetric Fabry-Perot modulators are vertically integrated with GaAs/AlGaAs heterojunction phototransistors to yield all-optical photonic switches. The photonic switches using `normally on' modulator pixels exhibit an output on-off ratio of 12:1 with internal optical gain of 4 dB. The photonic switches using `normally off' modulator pixels yield similar contrast and gain, but exhibit intrinsic bistable behavior. The inverted cavity modulators employed permit utilizing the transparency of the GaAs substrate at the operating wavelength and offer advantages for fabricating large arrays for optical signal processing     

Electroabsorption waveguide modulators at 1.3 /spl mu/m fabricated on GaAs substrates

An InGaAs-InAlAs multiple-quantum-well (MQW) electroabsorption (EA) waveguide modulator fabricated on a GaAs substrate has been designed and characterized at 1.3-/spl mu/m wavelength for microwave signal transmission on an analog fibre-optic link. The modulator structure with a lattice constant 2.5% larger than that of GaAs is grown upon a 0.7-/spl mu/m-thick three-stage compositionally step-graded In/sub z/Al/sub 1-z/As relaxed buffer. The waveguide modulator exhibits a high-electrooptic slope efficiency of 0.56 V/sup -1/, a 3-dB electrical bandwidth of 20 GHz, and a large optical saturation intensity in excess of 17 mW. These high-speed optoelectronic modulators could potentially be integrated with on-chip GaAs electronic driver circuits.     

Monolithic integration of InGaAsP/InP distributed feedback laser and electroabsorption modulator by vapor phase epitaxy

Monolithic integration of a 1.55-μm InGaAsP/InP distributed feedback (DFB) laser and an electroabsorption (EA) modulator was studied. The difference between the lasing photon energy and the bandgap energy of the modulator waveguide was designed to be 30-40 meV, taking into account the linewidth-enhancement factor and the zero-bias absorption loss. The integrated devices were grown by three-step vapor phase epitaxy (VPE). The CW threshold current at 20°C of the DFB laser part with a buried heterostructure was 30-60 mA and the breakdown voltage of the modulator part with a strip-loaded stripe geometry was 20-40 V, and these values indicated satisfactory crystal quality in the VPE epitaxial layers. The operating voltage of the modulator to give on:off ratios of 10:1 and 100:1 was 1.5- 4 V and 2.5-6.5 V, respectively, depending on the length in the range200-500 mum. A 3-dB bandwidth of about 2.5 GHz and a linewidth-enhancement factor of about 1.6 were obtained for the integrated modulator.     

基于亚波长金属孔阵列的光控太赫兹强度调制器

太赫兹波强度调制器对太赫兹技术的发展至关重要。亚波长金属孔阵列可以激发表面等离子激元,增加入射电磁波的透射效率,极大地提高调制器的调制深度。提出了一种基于表面等离子激元的光控太赫兹波强度调制器。首先给出了器件所依赖的基本原理;其次利用传统的微纳加工技术在半绝缘砷化镓衬底上制作出二维亚波长金属孔阵列;最后搭建了太赫兹时域光谱系统,测试了器件样品对太赫兹波的透过率。结果表明:亚波长金属孔阵列可以引起透射率的异常增强,且透射率随着泵浦光强的增大而减小,在特定频率点实现了较高的调制深度。此研究为实现高调制深度的太赫兹波强度调制器提供了参考。     

15-GHz modulation performance of integrated DFB laser diode EA modulator with identical multiple-quantum-well double-stack active layer

Monolithically integrated InGaAsP 1.55-/spl mu/m ridge waveguide distributed feedback laser diodes with an electroabsorption modulator using an identical active multiquantum-well (MQW) layer structure with two different QW types exhibit low-threshold currents <18 mA. The 3-dBe cutoff frequency of 200-/spl mu/m-long modulators exceeds 15 GHz. 10-Gb/s transmission experiments with a voltage swing of 1.0 V/sub pp/ demonstrate the potential of this novel integration scheme.     

LiNbO3waveguide modulator with 1.2 µm thick electrodes fabricated by lift-off technique

In order to make efficient high-frequency electrooptic modulators, the microwave loss in the electrodes has to be minimized. A lift-off technique using chlorobenzene to harden the top of AZ1350-J photoresist was adopted to fabricate 1.2 μm thick metal electrodes. A 1 cm long, 15 μm wide strip electrode has a dc resistance of 11 Ω, which is substantially less than that of the 2000 Å thick electrodes routinely fabricated. A 1 cm long traveling-wave phase modulator consisting of a single waveguide was tested. The measured -3 dB bandwidth is 3.8 GHz.     

Packaged AlGaAs waveguide modulator array at 830 nm wavelength

We report a fully packaged AlGaAs waveguide modulator array with four individually addressable elements operating at approximately 830 nm wavelength and a clock speed of 1 GHz. The modulators rely largely on the linear electro-optic effect for operation, and have been packaged with an E/D MESFET driver with complementary 3.5 V outputs, and a thick-film ceramic bias network. The device is compact, using multimode interference devices for on-chip splitters and combiners and has a 4 mm electrode length. Extinction ratios in excess of 10 dB have been demonstrated over a temperature range from room temperature to 143°C. The modulator array has been packaged with a remote high power (100 mW) diode laser using stable single mode input coupling, while the modulator output is packaged with a multimode fiber array of 52.5 μm core diameter     

A 1.8-mW CMOS ΣΔ modulator with integrated mixer forA/D conversion of IF signals

In this paper, the design of a continuous-time baseband sigma-delta (ΣΔ) modulator with an integrated mixer for intermediate-frequency (IF) analog-to-digital conversion is presented. This highly linear IF ΣΔ modulator digitizes a GSM channel at intermediate frequencies up to 50 MHz. The sampling rate is not related to the input IF and is 13.0 MHz in this design. Power consumption is 1.8 mW from a 2.5-V supply. Measured dynamic range is 82 dB, and third-order intermodulation distortion is -84 dB for two -6-dBV IF input tones. Two modulators in quadrature configuration provide 200-kHz GSM bandwidth. Active area of a single IF ΣΔ modulator is 0.2 mm² in 0.35-μm CMOS     

Temperature dependence of the lasing characteristics of the 1.3 µm InGaAsP-InP and GaAs-Al0.36Ga0.64As DH lasers

We report here our experimental observations on the temperature dependence of threshold current, carrier lifetime at threshold, external differential quantum efficiency, and gain of both the 1.3 μm InGaAsP-InP and GaAs-AlGaAs double heterostructure (DH) lasers. We find that the gain decreases much faster with increasing temperature for a 1.3 μm InGaAsP DH laser than for a GaAs DH laser. Measurements of the spontaneous emission observed through the substrate shows that the emission is sublinear with injection current at high temperatures for the 1.3 μm InGaAsP DH laser. Such sublinearity is not observed for GaAs DH lasers in the entire temperature range 115-350 K. The experimental results are discussed with reference to the various mechanisms that have been proposed to explain the observed temperature dependence of threshold of InGaAsP DH lasers. We find that inclusion of a calculated nonradiative Auger recombination rate can explain the observed temperature dependence of threshold current, carder lifetime at threshold, gain, and also the sublinearity of the spontaneous emission with injection current of the 1.3 μm InGaAsP-InP DH laser. Measurement of the nonradiative component of the carrier lifetime (τA) as a function of injected carrier density (n) shows thattau_{A}^{-1} sim n^{2.1}which is characteristic of an Auger process.     

An AlGaAs/GaAs short-cavity laser and its monolithic integration using microcleaved facets (MCF) process

This paper describes the microcleaved facets (MCF) process developed for AlGaAs/GaAs laser fabrication which can avoid the previous substrate cleavage and therefore be applicable to preparing both discrete short-cavity lasers and optoelectronic integrated circuits (OEIC's). An AlGaAs/GaAs double heterostructure ridge-waveguide laser with an extremely short cavity length, namely 20 μm, was first realized by this process. A threshold current as low as 20 mA and a single longitudinal mode lasing were achieved. The usefulness of this process for integrating a laser and a monitoring photodiode on a GaAs substrate is also demonstrated.     

毫米波矢量调制器及其在有源相控阵天线中的应用

矢量调制器芯片作为一种可以同时对载波进行相位和幅度调制的新型电路,能够替代传统的数字移相器和数字衰减器用在有源相控阵系统中.先设计了一款工作在Ka波段毫米波单片矢量调制器,在片测试结果显示可以实现- 12～-40 dB的幅度调制与360°的相位调制.然后设计了一个Ka波段1×8阵有源相控阵天线,改变矢量调制器的控制电压...     

Low threshold Be implanted (GaAl)As laser on semi-insulating substrate

Be implanted stripe geometry double heterostructure lasers have been fabricated on a semi-insulating GaAs substrate, with threshold currents as low as 15 mA for a cavity length of 100 μm. The laser has been monolithically integrated with a metal-semiconductor field-effect transistor.     

A first-order current-steering sigma-delta modulator

A new architecture is presented for a first-order sigma-delta (ΣΔ) modulator. The system achieves a high sampling frequency, can be used as a building block for higher-order modulators, and uses circuit techniques that are largely independent of a specific technology. The key features of this implementation are that it operates in a continuous-time (as opposed to switched) mode and does not need feedback amplifiers. To test the validity of the concept, the system was realized in 2-μm, n-well, double-metal, single-poly technology. It has a measured resolution of 9 b and a linearity of 13 b at a clock frequency of 20 MHz with an oversampling ratio of 128. It operates from a power supply of ±2.5 V with a power consumption of 3 mW. The circuit occupies an area of 0.92 mm²     

Acoustooptical pulse modulators

A theoretical analysis of acoustooptical pulse modulators is given. Calculations are carried out that yield the intensity and rise time of the scattered light. The optimum relationship between the dimensions of the optical and acoustic beam is given. A fast high-efficiency modulator has been built based on the theoretical results. The modulator is composed of a 350-MHz ZnO transducer sputtered on a quartz acoustic lens and an As2S3glass serving as the modulating material. With 0.6 watt of electrical RF peak power driving the modulator, 70 percent of the light intensity (at 0.63μ) is deflected. The rise time of the scattered light pulse is of the order of 6 ns.     

A push-pull optical amplitude modulator

A push-pull optical amplitude modulator is described, and some experimental results are presented. The modulator is an interferometer with phase modulators in each arm. The design gives good temperature stability and allows a reduced modulating voltage by using a transverse modulating field. The use of a Köster's beamsplitting prism provided a compact practical design for the experimental KDP modulator. The modulator held a null in the output of 20 dB below the input for periods of one hour. The frequency response out to 30 MHz and the pulse response of the modulator were measured. Strong piezoelectric resonances were observed. The advantages of the push-pull modulator design for use with LiNbO3or LiTaO3are pointed out.