垂直外腔面发射半导体激光器的热管理方法研究

垂直外腔面发射半导体激光器在高功率运转的同时可以保持良好的光束质量,近年来一直成为研究的热点。本文介绍了垂直外腔面发射半导体激光器的结构及运行原理。由于热管理是其高功率运行的主要限制因素之一,分析了垂直外腔面发射半导体激光器的热管理方法。使用反向生长的外延片通过化学湿法腐蚀去掉砷化镓衬底,得到了约6μm左右的外延片,最后利用808nm的泵浦光进行抽运获得了200mW的连续激光输出。     

光抽运垂直外腔面发射半导体倍频绿光激光器

光抽运垂直外腔面发射半导体激光器(VECSELs)综合了传统面发射半导体激光器和光抽运固体激光器的优点,既能获得近衍射极限的圆形TEM00模,又能产生数瓦量级甚至更高的功率,实现了高光束质量和高输出功率的完美统一.     

半导体激光器叠阵无输出耦合镜光栅外腔光谱合束

宽面发射半导体激光器的光谱合束技术对发展高功率直接半导体激光光源具有重要意义。光栅外腔光谱合束基于光栅的波长选择特性和外腔半导体激光技术,实现单个合束单元的光谱锁定和所有合束单元的合束输出,输出光束质量与单个合束单元相当,亮度和功率得到很大提高。基于两个半导体激光器短阵列叠阵,进行了无输出耦合镜光栅外腔光谱合束实验研究,实现了12个半导体激光器短阵列的光谱合束。分析了光谱合束的输出光谱、输出功率和光束质量,在70 A的抽运电流下,连续输出功率为578 W,光谱带宽为10.26 nm,电光转换效率46.5%。     

半导体抽运铷蒸气输出2.8W线偏振铷激光

半导体抽运碱金属蒸气激光器(DPAL)是一种具有广阔应用前景的激光器,近年来发展迅速。使用碱金属铷所需要的中心波长为780nm的半导体激光器线阵作抽运源,采用平面衍射光栅搭建Littrow外腔将线宽压窄至0.13nm,并使用斩波器将半导体激光变为脉冲输出形式。采用透镜组合对窄线宽半导体激光进行光束扭转整形,整形后光斑近似为方形。半导体激光经线宽压窄和光束整形后,被聚焦进铷蒸气泡,泡内充入79kPa甲烷作为缓冲气体。控制铷蒸气泡温度为145℃,注入谐振腔的抽运光峰值功率为最高13W时,获得了峰值功率2.8W的线偏振铷激光输出,光-光转换效率达21%。     

高亮度半导体激光器无输出耦合镜光栅外腔光谱合束

宽面发射半导体激光器的光谱合束技术对发展高功率直接半导体激光光源具有重要意义。光栅外腔光谱合束基于光栅的波长选择特性和外腔半导体激光技术,实现单个合束单元的光谱锁定和所有合束单元的合束输出,输出光束质量与单个合束单元相当,而亮度和功率得到很大的提高。基于无输出耦合镜光栅外腔光谱合束结构,实现了单个半导体激光短阵列的光谱合束,分析了光谱合束的输出光谱、输出功率和光束质量的特性,获得了70 A工作电流下40.8 W的连续输出功率,快轴和慢轴方向的光束质量分别为0.41 mmmrad和9.16 mmmrad （包含95%能量）,相应的电光转换效率为38.4%,亮度高达67.90 MW/（cm2sr）。     

基于外腔光谱合束的650 nm半导体激光器EI北大核心CSCD

高功率650~660 nm波段激光器在可见光光电对抗领域具有重要作用,目前该波段光源由固体激光器通过半导体激光器泵浦并倍频输出,输出功率高、光束质量近衍射极限,但转换效率低。半导体激光器的转换效率高,但输出功率低,需要通过增加激光单元的方法提升功率,并通过激光合束的方式提升光束质量。文中提出外腔光谱合束的650 nm波段半导体激光器结构,通过实验验证可实现连续功率为7.3 W、光谱线宽为6.45 nm、电光转换效率为23.4%的650 nm波段激光输出,光束质量为M_(X)^(2)=1.95,M_(Y)^(2)=11.11,接近固体激光器,未来通过增加合束的激光单元数量并结合偏振合束可以获得更高功率的650 nm波段激光。     

高稳定度光泵浦腔内倍频488 nm半导体薄片激光器

设计了一种性能稳定、结构紧凑的光泵浦腔内倍频488 nm半导体薄片激光器。为获得光束质量好、输出性能稳定的488 nm激光器,利用808 nm LD从顶面垂直泵浦半导体增益介质芯片获得976 nm基频光,通过在腔内置入I类相位匹配的LBO晶体进行倍频获得488 nm激光输出。半导体增益介质芯片具有13量子阱和808 nm/976 nm双反射带反射镜,其双面键合金刚石散热片。在泵浦功率为9.2 W时,获得111 mW 488 nm激光输出,光谱线宽为1.3 nm,光-光效率为1.2%,光束质量Mx2、My2分别为1.03和1.02,连续工作3 h激光输出功率不稳定度为0.6%。     

双端抽运的30 W光纤激光器实验研究

报道了双端抽运连续输出的掺Yb^3 双包层高功率光纤激光器。实验采用了中心波长在975nm附近的两种输出形式的半导体激光器(LD)作为抽运源，测量了不同抽运条件下的输出功率特性和光谱特性。在仅尾纤输出的半导体激光器抽运下获得了斜率效率为42％，峰值波长为1103．8nm的9．2W激光输出；在仅准直输出的半导体激光器抽运下获得了斜率效率为57％，峰值波长为1104．4nm的20．0W激光输出；当两个半导体激光器在双端同时抽运时，获得光纤激光最大输出功率为30．6W，输出峰值波长为1108．4nm，以及49％的总体光一光转换效率。     

宽带可调谐掺镱双包层光纤激光器

采用高功率975 nm多模半导体激光器(LD)作为抽运源,以大模场掺Yb3+双包层光纤(YDCF)作为激光增益介质,运用能够承受较高功率运行的利特罗(Littrow)光栅外腔调谐结构,实现了宽带可调谐激光输出.实验中,双包层光纤采用最优光纤长度14 m,光栅经仔细调整后有效入纤反馈效率约20%,当入纤抽运功率约1.3 W时,激光器达到阈值并开始振荡.通过连续旋转光栅,激光输出波长能在1046～1121 nm之间实现可调谐,可调范围达75 nm.当入纤抽运功率为48 W时,在1089 nm波长处获得最大输出功率23.7 W,相应斜率效率为53%.最后,基于数值模拟简单地分析了激光输出特性,实验结果与数值模拟结果基本保持一致.     

运用波长与光纤长度关系选择激光波长

推导了掺Yb 光纤激光器中激射波长与掺杂光纤长度、掺杂浓度等的关系式。依据所得到的关系式,在981.5 nm 半导体激光抽运的掺Yb 环形腔石英光纤激光器中,获得了中心波长在1053nm 的激光输出。光抽运阈值功率为1.85 m W。激光半功率宽度(FWHM)为5 nm ,输出功率为104μW,斜率效率为3% 。激光空间模式为基横模。     

外腔面发射激光器自发辐射谱的热特性

热效应是限制外腔面发射激光器(VECSEL)输出功率和光束质量的主要原因。为了优化VECSEL增益芯片有源区量子阱的设计,降低激光器的热效应,提高斜效率和输出功率,采用光致荧光谱方法,对设计波长980nm VECSEL自发辐射谱的热特性进行了实验研究。取得了不同热沉温度下边发射和面发射谱随温度的变化数据。结果表明,反映有源区量子阱自身特性的边发射谱峰值波长随温度升高的红移速率是0.5nm/K,而受到增益芯片多层结构调制的面发射谱峰值波长随温度升高的红移速率只有0.1nm/K;由于受到VECSEL增益芯片中微腔的限制,面发射谱分离为多个模式,分别与微腔的腔模对应。可见对量子阱的发射波长及微腔腔长做预偏置优化处理,可以显著改善激光器的输出性能。     

50-GHz passively mode-locked surface-emitting semiconductor laser with 100-mW average output power

We have developed a passively mode-locked optically-pumped vertical-external-cavity surface-emitting semiconductor laser (VECSEL) which delivers up to 100 mW of average output power at a repetition rate of 50 GHz in nearly transform-limited 3.3-ps pulses at a wavelength around 960 nm. The high-repetition-rate passive mode locking was achieved with a low-saturation-fluence semiconductor saturable absorber mirror (SESAM) incorporating a single layer of quantum-dots. The output power within a nearly diffraction-limited beam was maximized using a gain structure with a low thermal impedance soldered to a diamond heat spreader. In addition, we systematically optimized the laser resonator to accommodate for the strong thermal lens caused by the optical pumping. We measured the thermal lens dioptric power and present a numerical model which is in good agreement with the measurements and is useful for optimizing resonator designs. The experimental setup is very versatile and its design and construction are discussed in detail.     

9.1-W High-Efficient Continuous-Wave End-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Laser

We report the first demonstration of an end-pumped vertical-external-cavity surface-emitting semiconductor laser (VECSEL) with more than 9.1-W continuous-wave output power at a wavelength of 1079 nm. In order to enable the VECSEL to operate in an end-pumping scheme, a liquid capillary bonding method is used to bond the VECSEL chip to the surface of an optically transparent heat spreader. Moreover, a modified distributed Bragg reflector is applied to the VECSEL chip structure to maximize the pump efficiency. These will result in an end-pumped VECSEL that is characterized by high output power with good beam quality without additional antireflection coatings of the samples. In combination with an end-pumped scheme and desirable output beam, the end-pumped VECSEL will prove useful in a variety of applications requiring compact module and efficient source with high output power.     

High-power passively mode-locked semiconductor lasers

We have developed optically pumped passively mode-locked vertical-external-cavity surface-emitting lasers. We achieved as much as 950 mW of mode-locked average power in chirped 15-ps pulses, or 530 mW in 3.9-ps pulses with moderate chirp. Both lasers operate at a repetition rate of 6 GHz and have a diffraction-limited output beam near 950 nm. In continuous-wave operation, we demonstrate an average output power as high as 2.2 W. Device designs with a low thermal impedance and a smooth gain spectrum are the key to such performance. We discuss design and fabrication of the gain structures and, particularly, their thermal properties     

High-Power High-Brightness Operation of a 2.25- $mu$m (AlGaIn)(AsSb)-Based Barrier-Pumped Vertical-External-Cavity Surface-Emitting Laser

We report on the output power performance and beam profile analysis of an optically pumped GaSb-based vertical-external-cavity surface-emitting laser operating at 2.25 mum. The use of a SiC heatspreader and a precise control of the temperature-dependent modal gain allowed for improved high-power operation with a maximum continuous-wave output power of 3.4W at 10degC heatsink temperature. At 0degC, a maximum output power >2.9 W was observed and still more than 1.6 W were obtained at room temperature. Using second-order moments for the definition of the beam diameter, a beam propagation factor M²~5 of was measured at maximum output power. Optimizing the beam quality of the laser resulted in a beam profile close to the Gaussian TEM₀₀ mode (M² ap 1.5) and still more than 2-W output power at 0degC.     

Single transverse mode operation of electrically pumped vertical-external-cavity surface-emitting lasers with micromirrors

We report an electrically pumped vertical-external-cavity surface-emitting laser (VECSEL) that is designed for wafer-scale fabrication. Single-mode continuous-wave operation is demonstrated at a wavelength of 970 nm. The device structure incorporates a curved micromirror output coupler that is produced using a micromolding process. In addition to outlining the VECSEL fabrication process, we quantify its spatial and spectral modal characteristics.     

Compact and Efficient Green VECSEL Based on Novel Optical End-Pumping Scheme

We propose a novel lens-less optical end-pumping scheme and report on the development of a highly efficient and compact green vertical-external-cavity surface-emitting laser (VECSEL). A constant-wave pump-power-limited maximum green output power of 1.1 W and an optical-to-optical conversion efficiency of as high as ~15.7% (=1.1 W/7 W) were achieved using a single chip pump laser diode placed directly behind the VECSEL structure without any beam focusing and shaping optical elements.     

High-power optically pumped 1550-nm VECSEL with a bonded silicon heat spreader

We present an optically pumped 1550-nm vertical-external-cavity surface-emitting laser with improved output power and operating temperature using a bonded heat spreader. The laser comprises an InGaAsP-based gain element, with a resonant periodic gain structure on top of a distributed Bragg reflector, and a high reflectivity spherical mirror as the external reflector. Heat transport is enhanced by a Si heat spreader bonded to the InGaAsP surface by liquid capillary bonding. Optical pumping is achieved using a 1250-nm fiber Raman laser. A maximum continuous output power of 250 mW was obtained under multitransverse mode operation at 240 K. Under operation in the fundamental near-Gaussian mode, we obtained a maximum power of 230 mW with a beam quality factor (M/sup 2/) of 1.22. At room temperature, the output power was limited to 12 mW.     

产生超短脉冲的光泵浦垂直外腔面发射激光器的研究进展

光泵浦半导体垂直外腔面发射激光器（OPS-WCSEL）在产生超短脉冲方面显示了优越的特性，在脉冲宽度、平均输出功率和脉冲重复频率等方面都得到了与传统超短脉冲激光器可比的结果．显出巨大的发展潜力。本文综合分析了用于产生超短脉冲的OPS-VECSE的基本原理和最趣研究进展，并探讨了该领域的发展方向和应用前景。     

Extended Tunability in a Two-Chip VECSEL

We demonstrate a widely tunable vertical-external-cavity surface-emitting laser (VECSEL) with a W-shaped cavity, in which two VECSEL chips serve as fold mirrors and a birefringent filter is inserted at Brewster's angle. These two chips provide much higher modal gain and broader bandwidth of the gain than a single chip does, enhancing the VECSEL tuning range and reducing the variation of tunable output power with the tuned wavelength. This two-chip VECSEL configuration makes it possible to shape the modal gain spectra of the laser or to manipulate the tuning curve of the laser by two different chips with certain gain peak detuning (offset). Multiwatts high-brightness linearly polarized output with a tuning range of 33 nm is demonstrated in such a two-chip VECSEL