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1.
Y3+取代Bi3+的Bi2O3-ZnO-Nb2O5基陶瓷的结构与介电性   总被引:3,自引:0,他引:3  
周焕福  黄金亮 《材料导报》2004,18(11):84-86
研究了Y3 取代的Bi2O3-ZnO-Nb2O5(BZN)基陶瓷(Bi1.5-xYxZn0.5)(Zn0.5Nb1.5)O7(0≤x≤1.5,BYZN)的结构和介电性能.采用传统的固相反应法制备陶瓷样品,XRD分析样品的相结构,SEM分析样品的微观形貌.结果表明:BZN陶瓷的结构为立方焦绿石单相;当Y3 取代量较少(0<x≤0.3)时,样品的相结构仍然保持立方焦绿石单相;随着Y3 取代量的进一步增加(x≥0.6),样品由立方焦绿石相向YNbO4和ZnO复相过渡.同时,样品的介电性能随结构的变化而呈现有规律的变化.  相似文献   

2.
采用半化学法制备微波介电陶瓷(Bi2-xNdx)(Zn1/3Nb2/3)2O7(0≤x≤0.6),系统地研究了陶瓷的相结构及低频介电性能。结果表明:当Nd^3+取代量较少伍≤0.25)时,样品的相结构仍然保持单斜焦绿石单相,随着Nd^3+取代量的进一步增加,样品中出现立方焦绿石相,样品结构呈现单斜相与立方相的共存。同时,样品的介电性能随Nd^3+取代量的变化为:介电常数先增大后减小,而介电损耗先减小后增大,在X=0.25处取得最佳电性能,分另1是εr=83,tanδ=0.0029(100kHz)。  相似文献   

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研究了Bi4Ti3O12掺杂对(Bi1.5Zn0.5)(Zn0.5Nb1.5)O7(BZN)陶瓷烧结特性、相结构和介电性能的影响.采用传统的固相反应法制备样品,X射线衍射技术分析相结构,SEM观察表面形貌.结果表明,Bi4Ti3O12掺杂能有效地促进烧结,提高介电常数ε,降低介电损耗tgδ,优化介电频率温度系数αε.1000℃烧结8%(摩尔分数) Bi4Ti3O12掺杂的BZN陶瓷具有较好的介电性能ε=192,tgδ= 4.21×10-4,αε=-3.37×10-4/℃.  相似文献   

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采用固相反应法制备了Ba4Sm9.33Ti18O54(简称BST)xwt%Al2O3(x=0~1.5)微波介质陶瓷.研究了掺杂Al2O3对BST陶瓷的显微结构和介电性能的影响.扫描电镜和能谱分析结果显示:未掺杂的BST陶瓷中有少量Sm2Ti2O7相,随着增加Al2O3掺入量,Sm2Ti2O7相消失,BST陶瓷中先后产生了BaTi4O9(x≥0.6)和BaAl2Ti5O14(x≥1.0)两种新相.介电性能测试结果表明Sm2Ti2O7相的消失以及少量BaTi4O9相的形成,能显著提高BST陶瓷的Qf值,但会降低陶瓷的介电常数.当Al2O3的掺入量从0.6wt%增加到1.0wt%时,BaTi4O9相的量逐渐增加,引起BST陶瓷的Qf值略微下降.BaAl2Ti5O14相的产生会同时降低BST陶瓷的介电常数和Qf值.掺入0.6wt%Al2O3的BST陶瓷在1340℃烧结3 h后具有最佳的介电性能:εr=74.7,Qf=10980 GHz,τf=–11.8×10-6/℃.  相似文献   

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采用传统固相烧结法制备Pb_(0.92)Sr_(0.06)Ba_(0.02)(Sb_(2/3)Mn_(1/3))_(0.05)Zr_(0.48)Ti_(0.47)O_3∶xCeO_2(简称PSBSM-PZT)压电陶瓷样品。研究不同CeO_2掺杂含量对PSBSM-PZT基陶瓷样品的物相结构、微观形貌、压电及介电性能的影响。结果表明:当CeO_2掺杂量x≤0.5%(质量分数,下同)时,陶瓷样品均为纯的钙钛矿结构。随着CeO_2掺杂含量的增加,陶瓷样品中四方相结构逐渐向三方相结构转变。随着CeO_2掺杂含量的进一步增加,陶瓷中出现焦绿石相,虽然陶瓷中已经出现焦绿石相,但是样品仍没有完全转变为三方相陶瓷;CeO_2掺杂具有细化晶粒的作用,当x=0.25%时样品晶粒晶界清晰,晶粒之间的结合相对致密,晶界处气孔率低,陶瓷断裂方式以沿晶断裂为主;当x=0.25%时,陶瓷样品获得最佳的压电与介电性能:d_(33)=346pC/N,k_p=0.60,Q_m=1396,ε_r=1309,tanδ=0.474%。  相似文献   

6.
研究了A位La^3+替代对Bi2O3-ZnO-Nb2O5(BZN)陶瓷结构和介电性能的影响。当La替代量X〈0.5时,陶瓷相结构为单一的立方焦绿石相。随着La替代量的增加,陶瓷样品的晶粒尺寸和密度逐渐减小。低温下的介电弛豫现象随着La替代量的增加也发生有规律的变化,介电常数逐渐减小,弛豫峰峰形逐渐宽化,峰值温度向低温方向移动。与La替代量为0.1、0.15、0.3和0.5相对应的弛豫峰的峰值温度分别为-95℃、-99℃、-109℃和-112℃。  相似文献   

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研究了La3+取代的(Bi1.5Zn0.5)(Ti1.5Nb0.5)O7基陶瓷(Bi1.5-xLaxZn0.5)(Ti1.5Nb0.5)O7(0.0≤x≤1 2,BLZNT)的结构与介电性能。采用传统的固相反应法制备了陶瓷样品,用XRD、SEM分析了样品的组织。在整个取代范围内,La3+取代的样品基本保持单一烧绿石相,稳定范围由容忍因子(RA/RB值)来确定;同时,随着La3+取代量的增加,晶胞常数先增后减。介电性能随结构变化而变化,其中介电性能为:ε=130~170,tanδ=~0.9×10-3(1MHz),并且掺杂La优化了BLZNT x样品高频端(>100kHz)的频谱特性。  相似文献   

8.
研究了Nd3+离子A位置换改性(Pb0.5Ca0.5)(Fe0.5Nb0.5)O3陶瓷的微波介电性能.[(Pb0.5Ca0.5)1-xNdx](Fe0.5Nb0.5)O3(PCNFN)陶瓷的微波介电性能得到改善是由于少量过剩的Nd3+与(Pb,Ca)2+的固溶能够消除氧空位.当x=0.02时,能够形成单相的钙钛矿相,随着Nd3+置换量的增加,过剩的Nd3+将导致第二相焦绿石的形成,焦绿石会恶化PCNFN的微波介电性能.PCNFN介电性能随x的增加而下降是由于焦绿石相随x增加的结果.当x=0.02-0.05,PCNFN陶瓷有很好的微波介电性能,介电常数K>100,Qf值为5385-5797GHz,频率温度系数TCF随Nd3+含量的增加从正的变为负的.  相似文献   

9.
研究了NbzO5和Sm2O3复合掺杂对Ba0.9Sr0.1TiO3陶瓷微观结构和介电性能的影响。结果表明:Nb2O5、Sm2O3复合掺杂Ba0.9Sr0.1TiO3陶瓷1510℃致密烧结,Nb5+、Sm3+共同占据钛位,形成稳定的、单相的钙钛矿结构。随着添加量X的增加,介电常数ε,和击穿电压Eb先增加后降低,介质损耗tanδ先降低后增大。掺杂适量的Nb2O5和Sm2O3,可明显提高材料的ε,降低tanδ。x=0.04时,获得了较好的介电性能(εr=6168、tanδ=0.0024、Eb=14.3MV·m^-1、绝缘电阻率ρ〉10^12Ω·cm)的高压电容器陶瓷。  相似文献   

10.
Bi2O3—ZnO—Nb2O5系中焦绿石结构与相分布   总被引:7,自引:0,他引:7  
根据焦绿石结晶化学原理,研究了Bi2O3-ZnO-Nb2O5(BZN)系中焦绿石的相结构与分布用淬冷技术保持样品的高温相结构,用粉末X-射线衍射技术(XRD)分析相组成与相结构得到了BZN系中两种焦绿名单相(立方相α和正交相β和α-β复相分布的等温相图,并探讨了该系统中焦绿石立方相和正交相之间的α-β位移式相变的机理  相似文献   

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A microstructural study has been carried out of plasma-sprayed Al2O3 and mixed and sintered Al2O3Y2O3. In order to ascertain the degree of metastability achieved by plasma spraying, these results are compared with a similar experiment utilizing a CO2 laser for melting and the hammer-and-anvil technique for quenching of the same materials. X-ray diffraction methods were used to determine the obtained phases and crystal structures. In addition, transmission electron microscopy was used to confirm the phases present and to study their morpology. The porosity was studied with both mercury intrusion porosimetry and small angle neutron scattering. The addition of Y2O3 is shown to decrease the porosity from 15% to 7.5%. Adhesion is likewise related to the addition of Y2O3 and it is seen that adhesion of the mixture is measurably improved over that of pure Al2O3. The implication of these results is discussed.  相似文献   

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ZnO-Al2O3-B2O3-SiO2 (ZABS) glass powder was used as interlayer to join alumina ceramics. The effect of joining temperature on the microstructure and strength of joints was investigated. The results showed that the ZABS glass can react with alumina substrate to form a layer of ZnAl2O4 at Al2O3/glass interface. Bending test exhibited that low joining temperature (1150℃) led to low joint strength due to the formation of pores in the interlayer, originated by high viscosity of the glass. High joining temperature (1250 ℃) also resulted in low joint strength, because of large CTE (coefficient of thermal expansion) mismatch between amorphous interlayer and alumina substrate. Therefore, only when the joining temperature was appropriate (1200℃), defect-free interface and high joint strength can be obtained. The optimum joint strength reached 285 MPa, which was the same as the base material strength.  相似文献   

16.
The surface tensions of xPbO-(100?x) B2O3 (x = 30–80 mol%) and xBi2O3-(100?x) B2O3 (x = 0–100 mol%) melts were measured using the ring method over the temperature range 973 to 1373 K. The compositional and temperature dependences of surface tension were investigated. Addition of PbO and Bi2O3 to B2O3 increased the surface tensions of their respective PbO-B2O3 and Bi2O3-B2O3 melts. The surface tension showed a maximum at 60 mol% PbO in the PbO-B2O3 melts and at 70–80 mol% Bi2O3 in the Bi2O3-B2O3 melts. The temperature coefficient of surface tension was examined on the basis of its relationship to the structure, and it was suggested that the temperature coefficient of surface tension decreases with an increasing content of four-coordinated boron.  相似文献   

17.
Sintering additives were prepared from aluminium hydroxide and yttrium hydroxide. These additives were soluble in water and resulted in a binder. A -SiC powder was mixed with the additive solution and sintered at 2150° C without pressure. The oxides formed from the additive promoted sintering. The sintered body contained no pores. Aluminium, silicon, and yttrium oxide were precipitated in the sintered body.  相似文献   

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Various methods have been used to study the physical properties of the V2O5-Fe2O3 and V2O5-Fe2O3-Li2O systems, including X-ray, electron microscope, Mössbauer effect, NMR and thermogravimetric measurements. The iron ions are approximately equally distributed in substitutional and interstitial sites in the V2O5 lattice. The maximum number of iron ions dissolved in the V2O5 matrix corresponds to 4 mol % Fe2O3. In all the samples a quantity of Fe2O3 which has not been included in lattice is observed. The V2O5-Fe2O3 and V2O5-Fe2O3-Li2O systems are formed from solid solutions mixed with very small Fe2O3 particles. The analysis of the charge compensation of iron ions suggests that V2O5 is a quasi-amorphous semiconductor. Irradiation of V2O5-based samples with an electron beam induces the V2O5 platelets to convert to the VO x phase.  相似文献   

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