磁控溅射W-T-iN/MoS_2薄膜及其摩擦学性能研究

采用W靶、Ti靶及MoS2靶,先制备W-T-iN薄膜,然后再在其上面沉积MoS2纳米薄膜得到W-T-iN/MoS2纳米双层薄膜,通过多次实验得到溅射W-T-iN/MoS2薄膜的最佳工艺如下:溅射气压1.0 Pa,靶基距为100 mm,溅射功率为:W靶,Ti靶均为200W,MoS2靶为150 W;制备W-T-iN薄膜溅射时间为1 h,样品台加热600℃;制备MoS2纳米层时间为0.5 h。使用X射线衍射仪,扫描电子显微镜对薄膜的成分和结构进行分析。采用纳米压痕测试系统测试薄膜的纳米硬度和弹性模量,采用VEECOWYKONT1100非接触光学表面轮廓仪测试薄膜的表面及磨痕粗糙度;UMT-3摩擦磨损试验机在大气、室温、无润滑条件下对薄膜摩擦磨损性能分析,结果表明:在大气环境中,W-T-iN/MoS2薄膜摩擦性能要优于纯W-T-iN薄膜。     

英寸级少层MoS2薄膜的低温可控制备

大面积二硫化钼(MoS2)薄膜的可控制备是其走向应用的关键环节,尤其是少层及P型电导的MoS2,对于器件应用具有重要意义,但鲜有文献报道.本工作采用室温射频(RF)磁控溅射法,在玻璃衬底上制备了英寸级的少层MoS2薄膜,并经低温退火,实现了大面积较高质量的MoS2薄膜可控制备.原子力显微镜(AFM)、拉曼光谱(Raman)、X射线光电子能谱(XPS)、高分辨透射电子显微镜(HRTEM)和紫外可见吸收光谱(UV-vis)分析结果表明:所制得的大面积超薄薄膜为3层的多晶膜,厚度约2.2 nm,且均匀、平整、可控,薄膜结晶性好、稳定性高.使用同样的工艺在Si/SiO2基片上制备少层MoS2薄膜,并将其制成背栅场效应晶体管(TFT),电学表征表明该薄膜呈现P型导电特征,载流子迁移率为0.183 cm2·V-1·s-1.本工作提供了一种大面积少层MoS2薄膜的可控制备方法,而且制备温度低,工艺简单且兼容性强,易实现大规模工业化生产.     

磁控反应溅射MoS2/Ti/C复合薄膜的组织结构及摩擦磨损性能

为了提高MoS2薄膜在室温潮湿大气条件下的摩擦磨损性能,通过磁控反应溅射制备了MoS2/Ti/C复合薄膜.采用能谱仪(EDS)、X射线衍射仪(XRD)、场发射扫描电子显微镜(FESEM)对薄膜的成分、相组成和形貌进行表征,采用纳米压痕仪测试薄膜的结合力、纳米压痕硬度,采用多功能微摩擦磨损试验机测试薄膜的摩擦系数,并采用...     

磁控溅射MoS2＋Sb2O3防冷焊薄膜性能研究

MoS2溅射膜具有在潮湿大气中容易发生氧化而失去润滑作用的缺点.为了解决这个问题,将Sb2O3添加于MoS2中,用磁控溅射法制备了MoS2+Sb2O3薄膜,并利用球-盘式磨损试验机考察了它对薄膜摩擦特性的影响.通过XRD、XPS、AFM对MoS2+Sb2O3薄膜的微观结构和形貌及其化学状态进行了分析.实验结果表明薄膜的微观结构致密、晶粒小、分布均匀,有良好的润滑性、防冷焊性,特别适用于卫星活动部件的固体润滑.     

MoS2/Zr复合薄膜的制备及性能研究

采用新型中频磁控溅射技术及多弧离子镀相结合的复合镀膜工艺，在硬质合金YT14基体上制备了MoS2／Zr复合薄膜。采用扫描电子显微镜（SEM）考察MoS2／Zr复合薄膜表面及截面的形貌，利用能谱分析（EDX）薄膜的成分组成。测试涂层的厚度、显微硬度及涂层与基体之间的结合力等性能参数。结果表明：制备的MoS2／Zr复合薄膜结构致密，结合力约为60N，厚度约为2．6μm，硬度约为HV800。     

磁控溅射MoS2/WS2复合薄膜的工艺与摩擦学性能研究

采用MoS2/WS2复合靶材在不锈钢和硅基片上溅射MoS2/WS2纳米薄膜,通过多次实验,得到溅射MoS2/WS2薄膜的最佳工艺如下:溅射气压4.0Pa,靶基距为70mm,溅射功率为150W,溅射时间为3h.使用X-射线衍射仪,能谱仪,扫描电子显微镜对薄膜的成分和结构进行分析.采用HH-3000薄膜结合强度划痕试验仪,纳米压痕测试系统,UNT-3摩擦磨损试验机对薄膜进行机械性能和摩擦磨损性能分析,结果表明:在大气环境中,WS2/MoS2 复合薄膜摩擦性能要优于纯MoS2薄膜.     

磁控溅射MoS2/W复合薄膜的微结构与摩擦学性能研究

采用磁控溅射法,用纯MoS2/W双靶在模具钢Cr12和硅基片上溅射MoS2/W复合纳米薄膜,通过X射线衍射仪、能谱仪、扫描电子显微镜对薄膜的成分和结构进行分析.采用UMT-2型微摩擦磨损试验机在大气(相对湿度30％～ 45％)和室温(20～25℃)环境下评价薄膜的摩擦磨损性能.结果表明:MoS2/W复合薄膜组织致密,主要生长晶向为(002)晶向,摩擦因数低,摩擦学性能优于纯MoS2膜,且耐磨寿命高、摩擦稳定性好、承载能力大.     

磁控溅射MoS2/Sb2O3复合膜的润滑失效分析

磁控溅射法制备了MoS2 /Sb2 O3 固体润滑复合膜 ,用CSEM摩擦试验机、CSEM纳米划痕仪和PHI- 5 70 2XPS/AES多功能电子能谱仪 ,考察了其摩擦磨损性能、抗损伤性能和抗氧化性能 ,侧重分析了薄膜失效的原因 ,探讨了该固体润滑复合膜润滑失效的微观机理     

磁控溅射MoS2／Sb2O3复合膜的润滑失交分析

磁控溅射法制备了MoS2/Sb2O3固体润滑复合膜，用CSEM摩擦试验机，CSEM纳米划痕仪和PHI－5702ZPS／AES多功能电子能谱仪，考察了其摩擦磨损性能，抗损伤性能和抗氧化性能，侧重分析了薄膜失效的原因，探讨了该固体润滑复合膜润滑失效的微观机理。     

Al-Ti共掺杂MoS2复合涂层润滑性能研究北大核心CSCD

采用磁控射频(RF)与磁控直流(DC)分别溅射金属铝靶,制备了润滑RF-Al-Ti/MoS2和DC-Al-Ti/MoS2复合涂层,并在真空条件下对制备涂层进行热处理以提高涂层耐磨损性能。结果表明,RF-Al-Ti/MoS2复合涂层中S/Mo原子比为1.55,有利于MoS2(002)面的形成,涂层平均摩擦系数低至0.1;由于RF-Al-Ti/MoS2复合涂层原子沉积效率更大,导致涂层结构致密,且RF-Al-Ti/MoS2复合涂层中Al原子含量高,有利于提升涂层抗氧化能力及耐磨损性能。对RF-Al-Ti/MoS2和DC-Al-Ti/MoS2复合涂层进行真空热处理,Ti和Al间扩散形成Ti-Al中间相进一步提升了涂层抗氧化性能,DC-Al-Ti/MoS2复合涂层磨痕形貌显示其耐磨损能力得到了明显提升;经500℃处理后,RF-Al-Ti/MoS2和DC-Al-Ti/MoS2复合涂层平均摩擦系数分别降低至0.08和0.07。总体上,射频溅射更有利于提升Al-Ti/MoS2复合涂层摩擦学性能。     

Effect of interface on mid-infrared photothermal response of MoS2 thin film grown by pulsed laser deposition

This study reports on the mid-infrared (mid-IR) photothermal response of multilayer MoS2 thin films grown on crystalline (p-type silicon and c-axisoriented single crystal sapphire) and amorphous (Si/SiO2 and Si/SiN) substrates by pulsed laser deposition (PLD).The photothermal response of the MoS2 films is measured as the changes in the resistance of the MoS2 films when irradiated with a mid-IR (7 to 8.2 μm) source.We show that enhancing the temperature coefficient of resistance (TCR) of the MoS2 thin films is possible by controlling the film-substrate interface through a proper choice of substrate and growth conditions.The thin films grown by PLD are characterized using X-ray diffraction,Raman,atomic force microscopy,X-ray photoelectron microscopy,and transmission electron microscopy.The high-resolution transmission electron microscopy (HRTEM) images show that the MoS2 films grow on sapphire substrates in a layer-by-layer manner with misfit dislocations.The layer growth morphology is disrupted when the films are grown on substrates with a diamond cubic structure (e.g.,silicon) because of twin growth formation.The growth morphology on amorphous substrates,such as Si/SiO2 or Si/SiN,is very different.The PLD-grown MoS2 films on silicon show higher TCR (-2.9％ K-1 at 296 K),higher mid-IR sensitivity (△R/R =5.2％),and higher responsivity (8.7 V·W-1) compared to both the PLD-grown films on other substrates and the mechanically exfoliated MoS2 flakes transferred to different substrates.     

离子束辅助沉积MoS2复合膜的XPS和ESR特性分析

通过IBAD技术制备了MoS2 Ag(Cu)复合膜 ,并利用XPS和ESR考察了复合膜的氧化情况。发现在RH为 6 0 %的大气环境下 ,Cu的掺入加速了MoS2 的氧化 ,相反Ag的加入却使MoS2 的氧化受到抑制 ;XPS发现MoS2 Cu复合膜中存在Mo6 ,ESR却并没发现中间态Mo5 ;而XPS没有检测到MoS2 Ag膜中有Mo6 ,ESR却发现Mo5 。这说明Mo5 受化学环境影响较大     

Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates

The two-dimensional layer of molybdenum disulfide (MoS(2)) has recently attracted much interest due to its direct-gap property and potential applications in optoelectronics and energy harvesting. However, the synthetic approach to obtain high-quality and large-area MoS(2) atomic thin layers is still rare. Here we report that the high-temperature annealing of a thermally decomposed ammonium thiomolybdate layer in the presence of sulfur can produce large-area MoS(2) thin layers with superior electrical performance on insulating substrates. Spectroscopic and microscopic results reveal that the synthesized MoS(2) sheets are highly crystalline. The electron mobility of the bottom-gate transistor devices made of the synthesized MoS(2) layer is comparable with those of the micromechanically exfoliated thin sheets from MoS(2) crystals. This synthetic approach is simple, scalable, and applicable to other transition metal dichalcogenides. Meanwhile, the obtained MoS(2) films are transferable to arbitrary substrates, providing great opportunities to make layered composites by stacking various atomically thin layers.     

射频溅射MoS2,WS固体润滑膜在脂润滑下的摩擦学特性

用球－盘试验机研究了射频溅射ＭｏＳ２，ＷＳ２固体润滑膜在脂润滑下的摩擦学特性，并用ＸＰＳ，ＳＥＭ和ＥＤＸ等方法进行了分析．结果指出，在锂基脂润滑下，表面溅射ＭＯＳ２薄膜后摩擦系数降低，擦伤载荷成几倍或几十倍增长，尤其在高滑动速度下效果更加明显，可在一定载荷范围内代替２＃主轴油进行润滑，摩擦中ＭＯＳ２膜表层组织很容易剥落，摩擦中与基体结合较牢的主要是表面下的有效膜厚。因而在本试验条件下两种厚度ＭＯＳ２膜的摩擦学性能基本无差别，溅射ＷＳ２膜中含氧量很高，且在整个膜层中均以ＷＯ３存在，因此减摩效果不理想。     

溶胶-凝胶法制备Ge/SiO2微晶复合薄膜

采用Ｓｏｌ－ｇｅｌ方法制备了ＧｅＯ２－ＳｉＯ２复合薄膜,并用Ｈ２／Ｎ２还原使得ＧｅＯ２转变成Ｇｅ微晶而镶嵌在ＳｉＯ２的玻璃网格中,其平均晶粒尺寸小于４ｎｍ 。随着热处理时间的增加,２４０ｎｍ 处吸收峰的强度随之增大,并且其吸收边产生红移,说明Ｇｅ 微晶的含量及晶粒尺寸都在增大     

The influence of the local atomic packing of thin MoS x films on their electrocatalytic properties in hydrogen reduction

Technical Physics Letters - We have studied the characteristics of the structure, composition, and electrocatalytic properties of thin MoS x films obtained by pulsed laser deposition using an Mo...     

氮氧化硅薄膜制备方法的研究

氮氧化硅薄膜综合了ＳｉＯ２膜和Ｓｉ３Ｎ４膜的优点,具有优秀的光电性能,力学性能和稳定性能,已经在光电领域获得了广泛地应用,此外在材料改性方面也有广阔的应用前景。本文综合评述了几种氮氧化硅薄膜的制备方法,比较了各自的优缺点,并指出了今后制备方法的发展趋势。     

Experimental obviousness of the necessity for a thin Ni interfacial layer to obtain highly ordered photoconductive MoS2 films

It is shown that photosensitive films can be obtained by solid state reaction, induced by annealing, between the constituents Mo and S sequentially deposited in thin film form if the substrate is coated with a thin (10–20 nm) NiCr layer. The thin Mo and S layers are deposited in the atomic ratio Mo : S=1 : 3. The substrates used are mica sheets. An annealing at 1073 K for 30 min under argon flow allows one to obtain highly 2H–MoS2 crystallized films. The thickness of the crystallites is similar to that of the films; they have their c-axes perpendicular to the plane of the substrate. After crystallization, X-ray photoelectron spectroscopy (XPS) depth profiles show that Ni is diffused all over the thicknesses of the films and that 1 at% of Ni is visible at the surfaces of the films. The direct current (d.c.) conductivity of these films is nearly similar to that of single crystals. The films are photosensitive. The room temperature photoconductivity, which results from interband transitions, allows one to measure the direct band gap that is similar to that of a single crystal. When bare mica substrates (without Ni) are used MoS2 films are obtained but they are poorly crystallized and not photoconductive, which shows an NiCr interfacial layer is necessary. Probably a melting phase NiSx forms, which increases the mobility of the atom at grain boundaries. This revised version was published online in November 2006 with corrections to the Cover Date.     

反应溅射制备非晶Al2O3薄膜的介电特性

在氧气、氩气的混合气氛中,利用反应射频磁控溅射制备了厚度在100到10纳米的非晶氧化铝薄膜.通过Al-Al2O3-Al电容器研究了此非晶薄膜的介电性质.     

粘结MoS2基钼固体润滑膜的抗承载能力和耐速度性能研究

为了探讨粘结MoS2基固体润滑膜在干摩擦条件下的抗承载能力和耐速度性能,使用国产的环一块摩擦磨损试验机在干摩擦下对粘结MoS2基固体润滑膜在不同载荷和不同速度试验条件下的摩擦磨损性能进行了研究.试验结果表明:粘结MoS2基固体润滑膜的承载能力有高达2100N,在0.512～3.84m/s的滑动速度范围内具有良好的抗磨减摩性能.对转移膜的研究结果表明高载高速试验条件有利于促进对偶表面生成高质量的转移膜.粘结MoS2基固体润滑膜具有良好的抗承载能力和耐速度性能的机理应归结于在摩擦过程中对偶表面高质量转移膜的生成.