集成微光机械振动传感器芯片制作工艺研究

介绍了一种新型集成微光机械振动传感器的工作原理和芯片制作工艺。以聚甲基丙烯酸甲酯为结构材料，采用旋涂和干法刻蚀技术，实现了光波导集成光路和悬臂梁-质量块微机械结构在硅基底上的集成。详细讨论了高分子聚合物微器件制作工艺中的关键技术、工艺难点以及解决措施。     

硅光子器件及其集成技术的研究

主要探讨了偏振分集光路、可调光衰减器、波导耦合型锗光电探测器等硅光器件的研究进展,分析了其结构及技术参数,随后探讨了VOA-PD单片集成技术以及VMUX单片集成技术两种硅基单片集成技术,指出硅光子器件的性能指标已经能满足现代光纤通信系统的要求。     

质子辐射对铌酸锂多功能集成光路器件的影响

利用模拟软件SRIM2008计算了质子辐射对铌酸锂多功能集成光路器件(MIOC)的影响,结合质子辐射效应地面模拟试验的结果,分析比较了不同的质子辐射能量和注量对多功能集成光路器件的影响,给出了多功能集成光路器件质子辐射试验的数据和分析,讨论了多功能集成光路器件抗质子辐射的能力。     

集成光路在光纤通信中的应用

目前尚处于研究阶段的集成光路是发展光纤通信的一个重要方面。本文结合国内外这方面的发展动向,重点讨论用于光纤通信的若干集成光路新技术、集成光路器件与光纤系统无源器件的兼容性、光复用技术以及相干光纤通信的集成光路接收机等。     

干涉式光纤陀螺的偏振噪声分析

针对采用LiNbO3集成光器件的干涉式光纤陀螺结构特点,利用琼斯矩阵和相干矩阵建立了此类光纤陀螺光路传输系统数学模型。在此基础上进行了光路偏振噪声的理论分析,通过计算得出最大偏振误差表达式,讨论了光路器件的性能对陀螺偏振噪声的影响,得出消光比是影响结果的关键因子,并阐述了主要有效措施。     

聚合物纳米光子器件

控制光信号在亚波长或纳米尺度的波导巾传输对实现超紧凑的光子学器件和高密集的集成光路十分重要,因为它代表着集成光学向集成纳米光子学的迈进.人们已用光刻技术制作出基于金属材料的表面等离子体纳米波导、基于平面介质材料的纳米光子线波导、光了晶体波导等,也通过自组装等方法或技术制作出基于半导体材料或有机聚合物材料的纳米结构等.聚合物纳米线由于具有良好的机械性能,尤其是其弹性和柔韧性非常好,而且可以通过化学设计改变其材料的特性.因而,是构筑超紧凑光子学器件和微型化集成光路的最佳选择之一.借助化学合成法、激光烧蚀法、静电纺丝法、微纳吸管法、近场探针拉制法、尖端阵列法等制作出的各种聚合物纳米纤维也有报道.     

八路高速光电耦合器的研制

研制了一种独特的八路高速光电耦合器.器件采用混合集成电路方式,将24个芯片运用二次集成技术封装在20引线双列直插陶瓷管座中.设计中采用独立腔体分隔技术,将8个光路完全从物理上分离,彻底杜绝多路光信号间的相互干扰.文章重点描述了器件的结构特性、工作原理、参数设计以及特性曲线分析,并简要概括了在研制过程中采用的一些技术方法和制作工艺.     

InP的化学腐蚀

一、前言在半导体材料的衬底或外延片上用化学腐蚀法对样品进行腐蚀是集成光学中制作集成光路器件的一种途径。例如:分束器、反射器,分布反馈激光器,分布布拉格反馈激光器,脊形波导以及各种特种形状的激光器等,根据各种器件的不同要求选择不同的腐蚀液是制作器件必须了解的第一步。如制备分布反馈激光器,由于要求分辨率高,腐蚀面光亮,结构精细,需要严格控制,应当选择慢腐蚀液,而在脊形波导中,由于条宽、大面积腐蚀,选择快腐蚀液。最近几年,随着光纤通讯事业的发展,     

三维集成光路用的印刷电路板

目前集成光路已有很大发展,然而某些光学器件仍难以进行单片集成,例如作在半导体材料上的光源和探测器、作在晶体上的光开关和调制等就是如此.它们只作为分立器件被使用.为了解决这一问题,已经制成了三维集成光路用的印刷电路板.三维集成光路的基本形式,是将一个光学印刷电路板和光学器件组合起来,而光学印刷电路板则是由光波导和垂直的光输入和输出部分组成的,各种光学器件在     

新型红外探测器可动薄膜微腔的腐蚀工艺研究

基于气体直接吸收机理、微机械技术实现的气动红外探测器是对中远波段实现室温探测的新型红外探测器。该探测器的关键结构———微气腔和可动薄膜的腐蚀工艺研究对整个器件的制作有重要意义。根据探测器结构提出了对腐蚀工艺的要求,采用EPW湿法腐蚀的工艺,通过实验研究器件结构制作的最佳腐蚀条件和腐蚀速度,保证了工艺的可控性和器件结构的质量。     

Highly compact integrated optical set-reset memory pixels forparallel processing arrays

An integrated optoelectronic device with a single-mesa structure, which functions as an optical set-reset memory or an optical inverter, is reported. The device is composed of two heterojunction phototransistors and a light-emitting diode vertically integrated on an InGaAsP/InGaAs/InP wafer grown by gas source molecular beam epitaxy. The set and reset beams are incident on a single optical window on each device and are separated by wavelength. The prototype device has shown a large on/off control ratio (27) with relatively low input optical power levels (tens of microwatts). This device concept is extendable to large integrated arrays which are capable of directly processing spatial light signals     

Optoelectronic integrated tristable device with opticallycontrolled set and reset functions

An optical tristable device with optically controlled set and reset functions is developed. The device structure is a vertical and direct integration of four heterojunction phototransistors (HPTs) and a laser diode (LD). Two HPTS (HPT-A and HPT-B) integrated just above the LD stripe are utilized to achieve the set operation. The internal optical feedback from the LD to the HPTs takes an important role in the operation. On the other hand, another HPT (HPT-C or HPT-D) integrated slightly away from the position for the set operation is used to achieve the reset operation. The optical feedback from the LD to the HPT-A and HPT-B is suppressed by the current bypass through the HPT-C connected to both ends of the LD. Theoretical calculations are also made to explain these operations     

光学多层介质膜与多量子阱集成器件

本文采用光学传输矩阵元的方法设计了一种集成型反射式多量子阱器件,并给出了理论计算结果。采用MOCVD生长方法制作了该器件,它由n型多层增透介质膜、i型多量子阱、p型多层高反射率介质膜所组成。测试了该器件的光电流谱和反射率谱,并与理论结果作了比较,二者附合得很好。这种器件可以发展成兼具调制、开关、双稳复合功能的反射式集成器件。     

选择性填充光子晶体光纤应变特性研究

微结构的光子晶体光纤,通过填充光敏等功能材料,具有可调谐、全光纤结构和易于集成等优点,是光纤光子器件发展的重要方向.毛细管法将高折射率的匹配液,填充到空心光子晶体光纤中邻近纤芯的空气孔中,两端熔接单模光纤,制成高灵敏的应变传感器.实验表明,当填充30mm长,折射率为1.508的匹配液时,测得应变灵敏度约为每应变4.36pm.实验结果与仿真结果相符,这种装置可用于高灵敏的应变传感.     

Model GC1312S Multifunction Integrated Optical Circuit Devices

Model GC1312S multifunction integrated optical circuit device (MIOC) used in inertial-grade interferometric fiber optics gyroscopes(IFOGs) is fabricated by annealing and proton exchange process(APE) 。The unique feature of the device is the incorporation of the beat detection circuit besides all the features the conventional single Y-branch multifunction integrated optical circuit devices have.The device structure ,operation principle and typical characteristics, etc, are briefly presented in this paper.     

Scanning near-field optical microscope for the characterization ofoptical integrated waveguides

A scanning near-field optical microscope for the characterization of optical integrated devices has been developed. Compatible with a normal optical characterization setup the experimental setup allows a tapered uncoated optical fiber to scan the optical device with constant height by means of a shear force control using a tuning fork, and to obtain the evanescent field emerging from it. In this way, images showing simultaneously the topography with lateral resolution better than 10 nm and vertical resolution of 1 nm, and the optical field distribution have been obtained. Images obtained over rib waveguides show the guided mode intensity distribution, allowing characterization of the propagation of the light in the device for up to 1 mm. Identification of the guided mode propagation has been achieved by comparing the images with computer simulations. Measurement of the experimental decay lengths of the evanescent field obtained by the microscope allows a determination of the effective refractive index of the structure to be made     

Measurement and Characterization of Microwave Interaction between Integrated Distributed Feedback Laser Diode and Electro-Absorption Modulator

Integrated electro-absorption-modulated distributed feedback laser diodes (EMLs) are attracting much interest in optical communications for the advantages of a compact structure, low power consumption, and high-speed modulation. In integrated EML, the microwave interaction between the distributed feedback laser diode (DFB-LD) and the electro-absorption modulator (EAM) has a nonnegligible influence on the modulation performance, especially at the high-frequency region. In this paper, integrated EML was investigated as a three-port network with two electrical inputs and a single optical output, where the scattering matrix of the integrated device was theoretically deduced and experimentally measured. Based on the theoretical model and the measured data, the microwave equivalent circuit model of the integrated device was established, from which the microwave interaction between DFB-LD and EAM was successfully extracted. The results reveal that the microwave interaction within integrated EML contains both the electrical isolation and optical coupling. The electrical isolation is bidirectional while the optical coupling is directional, which aggravates the microwave interaction in the direction from DFB-LD to EAM.     

共振隧穿二极管型光探测器和光调制器

将共振隧穿二极管(RTD)的核心结构——双势垒系统与光探测器和调制器的原理相结合可构成共振隧穿光探测器和共振隧穿光调制器。这些器件既保持了RTD高频、高速的特点,同时又具备了光探测器和光调制器原有的功能,可用于光电集成电路。介绍了这种具有代表性的RTD型光电器件的工作原理、器件结构、制造工艺、器件参数测试等,为此类器件在国内的设计和研制奠定基础。     

基于热光效应的1×4聚合物数字光开关

提出了基于热光型聚合物的集成有S弯曲光衰减器的1×4 Y分叉数字光开关.利用开关与光纤阵列耦合用的S弯曲,将其设计成可变光衰减器,这使得器件更紧凑,并获得低串扰和大分叉角.在小于200mW的驱动功耗下,器件串扰可低至-35dB.     

Improved light coupling efficiency of organic light- emitting diode and polymer optical waveguide integrated device by grating coupler

In this work, the light coupling efficiency of organic light-emitting diode (OLED) and polymer optical waveguide integrated device was improved by the grating coupler. To maximize light coupling efficiency, the grating coupler was optimized by finite-difference time-domain (FDTD) method. Based on the simulation results, the grating coupler was fabricated via laser interference lithography process and an OLED was integrated on the surface of it. Comparing the integrated devices without and with grating coupler, light coupling efficiency of the grating-based integrated device was improved by about 5%. The proposed integrated device has the potential application for low-cost and flexible monolithic optical sensors.