A STUDY ON HOT-CARRIER-INDUCED GATE OXIDE BREAKDOWN IN PARTIALLY DEPLETED SIMOX MOSFET’S

The hot-carrier-induced oxide regions in the front and back interfaces are systematic-cally studied for partially depleted SOI MOSFET‘s .The gate oxide properties are investigated for channel hot-carrier effects.The hot-carrier-induced device degradations are analyzed using stress experiments with three typical hot-carrier injection,i.e.the maximum gate current, maximum substrate current and parasitic bipolaf transistor action.Experiments show that PMOSFET‘s degradation is caused by hot carriers injected into the drain side of the gate oxide and the types of trapped hot carrier depend on the bias conditions, and NMOSFET‘s degradation is caused by hot holes.This paper reports for the first time that the electric characteristics of NMOSFET‘s and PMOSFET‘s are significantly different after the gate oxide breakdown, and an extensive discussion of the experimental findings is provided.     

沟道热载流子导致的 PDSOI NMOSFET's击穿特性

对热载流子导致的 SIMOX衬底上的部分耗尽 SOI NMOSFET's的栅氧化层击穿进行了系统研究 .对三种典型的热载流子应力条件造成的器件退化进行实验 .根据实验结果 ,研究了沟道热载流子对于 SOI NMOSFET's前沟特性的影响 .提出了预见器件寿命的幂函数关系 ,该关系式可以进行外推 .实验结果表明 ,NMOSFET's的退化是由热空穴从漏端注入氧化层 ,且在靠近漏端被俘获造成的 ,尽管电子的俘获可以加速 NMOSFET's的击穿 .一个 Si原子附近的两个 Si— O键同时断裂 ,导致栅氧化层的破坏性击穿 .提出了沟道热载流子导致氧化层击穿的新物理机制     

SIMOX结构退化的卢瑟福背散射研究

在高温外延气氛下，ＳＩＭＯＸ结构会被损伤、退化。本文用卢瑟福背散射技术分析了这种退化，指出这种退化主要是高温下氢对表层硅的反应剥蚀及氢经表层硅中穿透性位错使埋层ＳｉＯ２分解。     

SIMOX技术及CMOS／SIMOX器件的研究与发展

SIMOX技术是最具有发展前途的SOI技术之一。在发展薄硅层、深亚微米OMOS/SOI集成电路中,SIMOX技术占有极其重要的地位。本文综述了SIMOX基片的形成、高质量SIMOX基片的制备方法。阐述了薄硅层OMOS/SIMOX器件的工艺特点以及器件的性能特点。本文也就SIMOX技术及GMOS/SIMOX器件的研究现状及发展趋势进行了讨论。     

SIMOX：氧离子注入隔离技术

过去十多年,SIMOX技术应用已得到证实。本文着重介绍了SIMOX技术及SIMOX结构的基本形成规律,论述了SIMOX技术在集成电路中,尤其是超薄层亚微米CMOS集成电路中的应用及其发展前景。     

衬底热空穴导致的薄栅介质经时击穿的物理模型研究1

该文定量研究了热电子和空穴注入对薄栅氧化层击穿的影响,讨论了不同应力条件下的阈值电压变化,首次提出了薄栅氧化层的经时击穿是由热电子和空穴共同作用的结果,并对上述实验现象进行了详细的理论分析,提出了薄栅氧化层经时击穿分两步。首先注入的热电子在薄栅氧化层中产生陷阱中心,然后空穴陷入陷阱导致薄栅氧击穿。     

Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut

We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII) for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO₂ interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force which is sufficient to overcome the silicon fracture resistance.     

A computationally efficient compact model for fully-depleted SOI MOSFETs with independently-controlled front- and back-gates

In this paper a computationally efficient surface-potential-based compact model for fully-depleted SOI MOSFETs with independently-controlled front- and back-gates is presented. A fully-depleted SOI MOSFET with a back-gate is essentially an independent double-gate device. To the best of our knowledge, existing surface-potential-based models for independent double-gate devices require numerical iteration to compute the surface potentials. This increases the model computational time and may cause convergence difficulties. In this work, a new approximation scheme is developed to compute the surface potentials and charge densities using explicit analytical equations. The approximation is shown to be computationally efficient and preserves important properties of fully-depleted SOI MOSFETs such as volume inversion. Drain current and charge expressions are derived without using the charge sheet approximation and agree well with TCAD simulations. Non-ideal effects are added to describe the I-V and C-V of a real device. Source-drain symmetry is preserved for both the current and the charge models. The full model is implemented in Verilog-A and its convergence is demonstrated through transient simulation of a coupled ring oscillator circuit with 2020 transistors.     

利用STM进行纳米加工的研究

本文对空气中应用扫描隧道显微镜（STM）进行的纳米级加工进行了研究。采用石墨（HOPG）和金薄膜作为样品．通过在STM探针和样品之间施加一定的电压脉冲制造出了具有纳米级尺度的结构。本文对形成的特征结构进行了分析．总结出部分实验规律．认为电场静电力作用使STM针尖或样品产生的机械变形是特征结构形成的主要原因。     

微细EDM技术加工微齿轮的研究

本文通过用微细电火花（ＥＤＭ）方法加工模数为０．０６的微齿轮研究，阐述了微细ＥＤＭ方法加工微齿轮的原理、方法和关键技术。     

A STUDY ON PROBE-BASED MULTICAST ADMISSION CONTROL AND ENHANCEMENT

To provide scalable and simple Quality of Service(QoS) mechanism for multicast services, Probe-Based Multicast Admission Control (PBMAC) scheme was proposed. In this paper, PBMAC is studied and a so-called subsequent request problem is found in PBMAC, which degrades system performance significantly when the network traffic is heavily loaded. Based on the analysis on subsequent request problem, an Enhance PBMAC (EPBMAC) scheme is proposed, in which complementary probing is devised to solve the problem. Using a new metric of normalized requested equivalent link capacity, the performance of PBMAC and EPBMAC is analyzed and evaluated. Two implementations are proposed for incremental deployment. The paper finally introduces evaluation with packet-based simulations. Both analytical and simulation results show the significant improvement in performance.     

基于FPGA的激光雷达恒虚警率控制技术研究

研究了激光雷达中的雪崩光电二极管恒虚警率控制技术,提出了一种基于FPGA的恒虚警率控制电路,通过噪声检测能够有效地根据背景辐射进行自适应调整,保持恒定的虚警率,并使雪崩二极管处于最佳工作偏压.实验结果表明其良好地实现了恒虚警率控制.     

模糊C-球壳聚类算法的研究

通过对基于同一目标函数的两种模糊C-球壳(FCSS)聚类算法性能的比较与分析,提出一种新算法。该算法收敛速度快,聚类结果准确。     

氟化锂晶体F3^＋色心四波混频研究

利用简并四波混频技术观测到LiF晶体中F_3~+色心的非线性光学相位共轭效应,以脉冲染料激光为泵浦光得到最大相位共轭反射率约为0.1%,根据LiF晶体F_3~+色心的能级特点从理论上阐明了F_3~+色心系统非线性饱和吸收和四波混频的物理起源。     

A NOVEL CONSTRUCTION OF QUANTUM LDPC CODES BASED ON CYCLIC CLASSES OF LINES IN EUCLIDEAN GEOMETRIES

The dual-containing (or self-orthogonal) formalism of Calderbank-Shor-Steane (CSS) codes provides a universal connection between a classical linear code and a Quantum Error-Correcting Code (QECC).We pr...     

A PRIORITY-BASED POLLING SCHEDULING ALGORITHM FOR ARBITRATION POLICY IN NETWORK ON CHIP

A solution is imperatively expected to meet the efficient contention resolution schemes for managing simultaneous access requests to the communication resources on the Network on Chip (NoC).Based on th...