量子线和量子箱激光器—下一代高性能半导体激光器

本文讨论了量子线和量子箱激光器的特性,如呈现非常低的阈值电流、展宽的调制带宽和窄的谱线宽度。还介绍了量子尺寸结构的制造工艺、尺寸起伏和非线性增益对激射特性的影响。最后给出量子微腔激光器的新概念。     

InxGa1—xAs／AlyGa1—yAs多量子阱的高压光致发光研究

用金刚石对顶砧压力装置在浓氮温度下和０～４ＧＰａ的压力范围内测量了不同阱宽（１．７～１１．０ｎｍ）的ＩｎｘＧａ１－ｘＡｓ／ＡｌｙＧａ１－ｙＡｓ（ｘ，ｙ＝０．１５，０；０．１５，０．３３；０，０．３３）多量子阱的静压光致发光谱，发现在Ｉｎ０．１５Ｇａ０．８５Ａｓ／ＧａＡｓ多量子阱中导带第一子带到重空穴第一子带间激子跃迁产生的光致发光峰能量的压力系数随阱宽的增加而减小，在Ｉｎ０．１５Ｇａ０．８５Ａｓ／     

Efficient Organic Multi—quantum Well Electroluminescent Devices Using Aluminum as Cathodes

Organic green light emitting devices(LEDs)with multi-quantum well(MQW)structure were fabricated.Aromatic diamine(TPD)was used as holetransporting layer and potential barrier layer;Tris(8-hydroxyquinoline)aluminunum(Alq3)was acted as electron-transporting emitter and MQW green emitter.Airstable aluinum(Al)was used as electron-injection contact.The influence of the thickness of potential barrier layer and the number of quantum well on the electroluminescent(EL)efficiencies of the devices was investigated.The organic LEDs with two quantum wells showed enhanced EL efficiencies.Maximum external quantum efficiency and brightness were 1.04% and 7000cd/m^2,respectively.     

Tris（8—Hydroxyquinoline）Aluminum／2—（4—Biphenylyl）—5—（4—Tertbutylphenyl）—1,3,3—O—xadiazole Organic Multiple Quantum Wells for Electroluminescent Devices

Organic multiple quantum wells(OMQWs) consisting of alternating layers of organic materials have been fabricated from tris(8-hdroxyquinoline) aluminum(Alq)and 2-(4-biphenylyl)-5-(4-tertbutylphenyl)-1,3,3-oxadiazole(PBD)by a multisource-type high-vacuum organic molecular deposition.From the small-angle X-ray diffraction patterns of Alq/PBD OMQWs,a periodically layered structure is confirmed through the entire stack.The Alq layer thickness in the OMQWs was varied from 1 nm to 4 nm.From the optical aborption, photoluminescence and electroluminescence measurements,it is found that the exciton energy shifts to higher energy with decreasing Alq layer thickness,The changes of the exciton energy could be interpreted as the confinement effects of exciton in the Alq thin layers.Narrowing of the emission spectrum has also been observed for the electroluminescent devices(ELDs)with the OMQWs structure at room temperature.     

非对称耦合双阱P—I—N结构的光伏谱研究

首次报道了GaAs/Al_(0.35)Ga_(0.65)As/GaAs(50(?)/40(?)/100(?))非对称耦合双阱P-I-N结构的室温光伏谱,清楚地观察到双阱的轻、重空穴激子峰,这些激子峰的能量位置与光荧光和光电流谱得到的数据吻合得很好,而且光伏谱谱形非常类似于光电流谱,呈现清晰的台阶状结构。此外,还观察到轻、重空穴激子跃迁对激发光偏振态的依赖,并讨论了产生光伏谱的机制。     

Inx—Ga1—xAs／GaAs应变量子阱光学性质

研究了用分子束外延方法生长在GaAs(100)衬底上的In_xGa_(1-x)As/GaAs(x=0.1)应变多量子阱样品,观察了其光荧光谱和光调制反射谱的光谱结构,讨论了有关基态光跃迁和激发态光跃迁性质.根据实验结果给出了能带偏移比值为Q_c=0.69(Q_v=1-Q_c=0.31),并提出有关轻空穴束缚于GaAs层而形成Ⅱ类超晶格的重要佐证.     

无杂质空穴扩散诱导量子阱无序及在光集成中的应用

综述了近年来新发展的量子阱生长后置无序的无杂质空穴扩散诱导量子阱部分无序的工艺技术，量子阱部分无序的机理，并分析了它在量子阱光电器件中的应用和使用该技术制出的光集成器件的最新结果。并对它的应用前景作了初步展望．     

具有GRIN—SCH量子阱结构激光器光波导及光场特性分析

本文给出了具有ＧＲＩＮ－ＳＣＨ结构量子阱激光器的光波导模型和详细的数值计算方法,并计算分析了ＡｌｘＧａ１－ｘＡｓＧＲＩＮ层中Ａｌ浓度和ＧＲＩＮ层厚度对等效折射率的影响,给出了ＧＲＩＮ层厚的最佳值范围;给出了宽接触ＩｎＧａＡｓ／ＡｌＧａＡｓＧＲＩＮ－ＳＣＨ量子阱激光器的近场分布三维图形,并由近场分布通过快速傅里叶变换求出了远场分布。计算得到的近、远场分布图形与实际器件测试得到的结果相符合。     

线性斜量子阱AlxGa1—xAs中的电子态

采用有效质量方法 ,计算了夹在两无限宽势垒层Al0 4Ga0 6As中的单个斜量子阱AlxGa1 -xAs中的束缚态电子包络函数和能级 ,并讨论了阱宽对能级的影响。