对H.323标准进展的思考

VoIP目前得到突飞猛进的发展,标准的成熟是发展的必要条件。现在对于VoIP的语音包传送都采用RTP／RTCP,而VoIP信令有H．323与SIP两种,电信运营商广泛采用的是H．323。H．323采用“对等”模式,任何实体都认为是“端点”,在端点之间交互H.225(改进的Q．931)呼叫接续信令、H．245控制信令。为实现与PSTN的互连,VoIP中引入网关,网关也是一种端点,目前的网关既完成媒体格式转换也完成信令转换,这与电信的信令与电路相分离的原则不符。     

H.323-SIP信令网关的实现

H.323和会话初始化协议（SIP）都是基于IP网络的多媒体通信协议,采用实时传送协议（RTP）传送实时的音频视频传输,二者之间可以通过设置信令网关互通,完成信令消息的翻译和转换功能。要实现H.323与SIP网络之间的互通,必须解决地址格式的转换、消息映射和终端能力协商等方面的问题。H.323-SIP信令网关在H.323和SIP互通中占有得要的地位,它能够使位于不同网络的用户直接和对端进行媒体交换,实现点到点、点到多点之间的通信。H.323-SIP信令网关的功能会越来越完善,也会越来越适应用户更加广泛的业务需要。     

浅析SIP-H．323信令网关的实现

H．323和SIP是基于IP网络的多媒体通信的两大主流技术．实现二者的互通是当前要解决的一个迫切问题。本文通过比较H．323与SIP协议,分析出互通过程中需要处理的主要问题．并提出采用SIP-H．323信令网关来实现这两个协议之间的映射．其中涉及到地址转换、消息映射和终端能力协商。     

SIP和H.323协议互通的研究

目前VoIP领域主要有两个信令标准：IETF的SIP协议和ITU-T的H．323协议．文中主要是对SIP和H．323协议的互通进行研究，简要介绍了SIP和H．323协议互通的基本原理，并讨论了VOCAL中SIP和H．323互通的实现．     

基于SIP和H.323的IP电话网互通研究

会话发起协议(SIP)和H.323是VoIP体系结构的两大主流信令协议,它们占有极其重要的地位,但两者的互通尚未解决。两者互通对VoIP系统更方便地提供多媒体业务有重要的实际意义。文中首先简单描述基于H.323和SIP的IP电话系统体系结构,提出了H.323和SIP互通的信令网关概念,然后着重讨论两种IP电话网络互通涉及的关键问题,包括地址解析、消息映射和终端能力协商等,最后分别以SIP和H.323侧发起呼叫为例,模拟SIP和H.323互通的实现。     

软交换IP信令互通研究与实现

目前,如何实现下一代网络(NGN)软交换技术中4种关键的协议,即H.323、会话初始协议(SIP)、媒体网关控制协议(MGCP)和H.248的互通有着十分重要的意义.文章在对这些协议进行简要阐述的基础上,提出了软交换信令互通的解决方案,并根据呼叫状态的变迁给出了部分主要的信令映射关系,最后,通过具体实例说明了互通的实现方法.     

H.323协议穿越NAT/防火墙

文章对网络地址转换(NAT)类型以及防火墙特性进行了介绍和分类,指出由于H 323协议本身没有考虑NAT的应用,在NAT设备进行地址转换时发生了困难,产生了内、外网难以互通的问题.为了解决问题,文章探讨了H 323协议穿越NAT的6种方式:H.323代理方式、应用层网关方式、中间盒通信(MIDCOM)方式、隧道方式、扩展协议方式、STUN方式,并对不同的穿越方式进行了分析.     

基于消息的高可靠IP电话网关系统原理与实现

综合比较正在发展的H.323IP电话网关的几种实现高可靠性的方法后,提出了一种基于消息传送实现两个信令实体热备份的方案及其具体实现,并指出了今后的IP网上应用层协议冗余备份的实现可能方向。     

IP-PCA H.323模块设计

IP－PCA（protocol converter A）是一个协议转换器，主要实现中国七号信令IP协议的转换，其会话协议使用H323协议，本论文主要介绍H323协议呼叫处理流程，H．323模块实现的功能。     

VoIP网络中H.323与SIP的比较与互通研究

在VoIP网络中,H.323协议在SIP协议出现之前就已经得到了广泛使用,因此,要实现H.323协议和SIP协议的互通是当前需要解决的一个重要问题。通过简要介绍这两种协议的体系结构,进一步分析互通过程中需要处理的主要问题,提出了实现H.323与SIP互通的网络结构模型,同时对互通所必须的信令网关进行了初步研究,从而解决了两种协议之间的地址转换与映射、消息转换与映射、媒体能力协商等。经实践证明,该互通方案是可行的。     

Switching in m.i.s.m. and m.i.s.i.m. structures

Switching has been observed in metal?thin-insulator?n-p+ structures, where the thin insulator is SiO2, or polycrystalline silicon. In this letter two alternative structures are discussed in which the n-p+ junction is replaced by a Schottky barrier. In the second device proposed two thin-insulator structures back-to-back are shown to exhibit bidirectional switching.     

GaAs m.a.o.s.f.e.t. memory transistor

A new non-volatile memory device is reported. This device is a GaAs m.o.s.f.e.t. with charge storage in the gate in which is a double oxide structure of aluminium oxide and GaAs native oxide, both oxides are grown anodically. The fabrication of the device is described and the results of initial measurements on the charging and charge retention properties are presented.     

Noise behaviour of the m.o.s.f.e.t. at v.h.f. and u.h.f.

The optimum noise figures of an m.o.s.f.e.t. at u.h.f. and at pinch-off are calculated using a simplified equivalent circuit. The noise parameters are also determined experimentally. Theory and experiment are shown to be in good agreement. Noise parameters of the m.o.s.f.e.t. for the frequency range 0.1?0.8 GHz are given.     

U.H.F. low-noise GaAs m.e.s.f.e.t. amplifier for colour t.v. broadcasting translator

Low-noise amplifiers for u.h.f. colour t.v. broadcasting translator use have been successfully developed by using 1 ?m gate GaAs m.e.s.f.e.t.s. The obtained performances revealed that a GaAs m.e.s.f.e.t. has low-noise and low intermodulation distortion characteristics, even in the 500?800 MHz frequency range, compared with a Si bipolar transistor.     

Current-kink noise of n-channel enhancement e.s.f.i.-m.o.s. s.o.s. transistors

An experimental study of the low-frequency-noise properties of n-channel epitaxial silicon films on insulator m.o.s. s.o.s. transistors has been performed. The measurements show an excessive noise contribution at drain voltages corresponding to the current-kink effect for temperatures ranging from 4.2 to 300 K.     

Wide-range monolithic bipolar?j.f.e.t. c.c.o.

A new monolithic current-controlled oscillator (c.c.o.) has been realised in a j.f.e.t.-bipolar technology. Its main advantages are a highly-linear seven decade frequency range and easy temperature compensation for frequency and output voltage.     

V.H.F. and u.h.f. Gunn-effect oscillators

In this letter, the use of the Gunn device as a broadband negative resistance, somewhat analogous to a tunnel diode, is explored. v.h.f. and u.h.f. oscillators are described; the frequency is determined by an external resonant circuit and is very nearly independent of the parameters of the Gunn-effect sample.     

Power m.o.s.f.e.t. linear h.f. amplifiers

N-channel silicon m.o.s. transistors for h.f. power applications have been fabricated which are optimised for linear amplification. These devices exhibit 2 W output power and 11 dB power gain at 630 MHz in class-A operation. The intercept point for third-order intermodulation distortion is 48dBm, which is considerably more than the same data obtainable with bipolar transistors.     

More active RC filters using the d.v.c.c.s./d.v.c.v.s.

Novel configurations using a differential-voltage-controlled current source, differential-voltage-controlled voltage source (d.v.c.c.s./d.v.c.v.s.) as the active building block are described. The configurations assume that the active building block is divided into two independent parts initially.     

New n-channel m.o.s.f.e.t.s

By using plasma c.v.d. and lift-off, an n-channel m.o.s.f.e.t. with effective channel length of 0.4 ?m has been fabricated. Its main fabrication processes and obtained electrical characteristics are described.