Ga^3＋掺杂对纳米氧化锌粉体导电性能的影响

采用液相共沉淀方法,以ZnSO4·7H2O为原料,GaCl3为掺杂化合物,NH4HCO3为沉淀剂合成碱式碳酸锌前驱体,通过在H2气氛下煅烧,制得Ga3+均匀掺杂的纳米氧化锌导电粉体.利用SEM,TEM,XRD,XPS和BET等分析手段对粉体的性能进行表征.结果表明,这种方法合成的导电氧化锌粉体材料颗粒尺寸较小、粒度分布均匀(约在20 nm～40 nm的范围内),颗粒呈类球状形貌,具有较好的分散性能.研究了Ga3+掺杂对氧化锌粉体导电性能的影响.结果表明,在Ga3+掺杂量为2.2mol%时,制得的氧化锌粉体的导电性能最好,体积电阻率达到2.0Ω·cm.     

ZnO掺杂纳米CeO2的共沸蒸馏法合成

采用化学共沉淀法结合正丁醇共沸蒸馏处理前驱体合成了ZnO掺杂纳米CeO2颗粒,通过XRD,DSC/TG,IR,TEM,原子吸收光谱以及紫外透过率分析等方法对其结构和性能进行了表征;并根据XRD线宽法,由Scherrer公式计算其晶粒尺寸,研究了共沸蒸馏、ZnO掺杂、以及焙烧温度和时间对CeO2纳米晶粒尺寸的影响.结果表明正丁醇共沸蒸馏法能有效脱除前驱体凝胶中的水分,防止干燥和焙烧过程中硬团聚的形成,从而得到粒径更小、分布更均匀、分散性更好的纳米CeO2颗粒;2 mol%～10 mol%掺杂ZnO能与纳米CeO2形成固溶体,且掺入量增加引起纳米CeO2晶粒有所增大;随焙烧温度提高,ZnO掺杂纳米CeO2晶粒显著长大,而高温下随焙烧时间延长,其晶格进一步趋于完整,晶粒尺寸增加;纳米CeO2具有良好的可见光透过和紫外光吸收能力,ZnO掺杂不会影响纳米CeO2的紫外遮蔽效果.     

ZnO掺杂纳米CeO2的共沸蒸馏法合成

采用化学共沉淀法结合正丁醇共沸蒸馏处理前驱体合成了ZnO掺杂纳米CeO2颗粒,通过XRD,DSC/TG,IR,TEM,原子吸收光谱以及紫外透过率分析等方法对其结构和性能进行了表征;并根据XRD线宽法,由Scherrer公式计算其晶粒尺寸,研究了共沸蒸馏、ZnO掺杂、以及焙烧温度和时间对CeO2纳米晶粒尺寸的影响.结果表明:正丁醇共沸蒸馏法能有效脱除前驱体凝胶中的水分,防止干燥和焙烧过程中硬团聚的形成,从而得到粒径更小、分布更均匀、分散性更好的纳米CeO2颗粒;2 mol%～10 mol%掺杂ZnO能与纳米CeO2形成固溶体,且掺入量增加引起纳米CeO2晶粒有所增大;随焙烧温度提高,ZnO掺杂纳米CeO2晶粒显著长大,而高温下随焙烧时间延长,其晶格进一步趋于完整,晶粒尺寸增加;纳米CeO2具有良好的可见光透过和紫外光吸收能力,ZnO掺杂不会影响纳米CeO2的紫外遮蔽效果.     

直流磁控溅射法在PET基板上制备AZO薄膜

室温下用直流磁控溅射法在PET塑料基板上制备氧化锌薄膜及掺铝氧化锌AZO(ZnO∶Al)薄膜.通过X射线衍射仪(XRD)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)、四点探针仪、霍尔效应仪及光谱仪等装置,考察了氧分率、溅射功率及铝掺杂量等工艺参数对薄膜微观结构和光电性能的影响.结果表明:AZO薄膜晶体结构为纯ZnO的六角纤锌矿结构.随着Al掺杂量增多,AZO薄膜导电性增加,透光率下降.在氧分率为8.2％,ZnO(40 nm)/Al(6 nm)三层膜条件下,得到电阻率为5.66×10-2Ω·cm,可见光范围内透光率约为80％的AZO薄膜.     

燃烧法制备的Y掺杂ZnO纳米片的气敏性能（英文）

以硝酸锌和酒石酸为原料,采用液体燃烧法制备钇(Y)掺杂的氧化锌纳米片。利用XRD和SEM对其微观结构进行表征,并研究Y掺杂量对ZnO气敏性能的影响。结果表明:所制备的ZnO为纤锌矿结构且表面粗糙,呈纳米片状,直径为20~100nm。以Y掺杂量为2%(摩尔分数)的氧化锌制成的传感器在300℃时对体积分数为100×10~(-6)的乙醇的灵敏度高达17.50,其最佳工作温度(300℃)低于未掺杂ZnO(330℃)。当乙醇气体的体积分数低至5×10~(-6)时,ZnO传感器也有明显的灵敏度值(约为2.5),且在300℃工作时响应时间仅为2s。相比于其他气体,该种传感器对乙醇表现出极好的选择性。     

钕掺杂氧化锌粉末的光性能和光催化性能(英文)

为了提高氧化锌(ZnO)的光催化性能,通过水热法制备了不同钕(Nd)掺杂量的ZnO。X射线衍射分析(XRD)和光电子能谱(XPS)测试说明钕原子成功地掺杂进入了ZnO晶格。XRD图谱还说明了粉末具有各向异性。光致发光(PL)图谱在可见光区域出现较宽范围的强峰。Nd掺杂使得可见光发射强度增强。光催化性能通过降解甲基橙溶液进行测试。研究发现Nd掺杂使得氧化锌的光催化性能得到提高,当掺杂Nd的摩尔分数为3%时,其光催化性能最佳。Nd掺杂引起的电子空穴对的增加以及诱导产生的置换氧缺陷(OZn)和间隙氧缺陷(Oi)使得可见光发射增强和光催化性能得到提高。     

纳米氧化锌对镍氢电池电化学性能的影响

采用均匀沉淀法制备纳米氧化锌,将其作为添加剂掺杂制备MH/Ni电池正极,研究正极中添加不同质量分数的纳米ZnO对电极电化学性能的影响,初步探讨纳米氧化锌在电极内部的反应机制。结果表明,掺杂后氢氧化镍电极的导电性提高,电化学活性增强,有效地提高了活性物质的利用率,改善了电极反应的传质和传荷条件,使电极中电活性粒子具有合理的分布,因而显示出良好的电化学性能。经过比较,添加质量分数为4%的纳米ZnO电化学性能最佳,在60周和80周时放电容量仍有282和272mAh·g-1,而且放电平台较高。     

低氮气压下燃烧合成Al掺杂β-SiC粉体的微波介电性能

以硅粉(Si)和炭黑(C)为原料、聚四氟乙烯(PTFE)为助燃剂、铝粉(Al)为掺杂源,在低压氮气气氛中通过燃烧合成的方法制备出Al掺杂β-SiC粉体.用XRD、SEM和EDS对其进行了表征,同时在频率8.2～12.4 GHz范围内对其进行介电常数的测试.结果表明未掺杂Al时生成富碳β-SiC粉体;当掺杂Al时并未生成AlN-SiC固溶体,而是Al原子进入到碳化硅晶格中占据硅的位置形成了Al/SiC固溶体,引起β-SiC晶格常数的逐渐增大.当Al掺杂含量为5 mol%时晶粒最小,同时出现了Al_2O_3杂质相,但是其介电常数实部和介电损耗达到最大值,同时对Al对β-SiC介电损耗的影响进行了讨论.     

Sb_2O_3,SiO_2和MgO复合掺杂的高梯度氧化锌压敏陶瓷材料

研究了对ZnO压敏陶瓷微观结构和压敏电压梯度的影响。研究发现,Sb_2O_3掺杂可有效提高ZnO压敏陶瓷的压敏电压梯度,但Sb_2O_3掺杂太多会使材料的非线性特性劣化。SiO+2掺杂也可显著提高ZnO压敏陶瓷的压敏电压梯度,除了提高压敏电压梯度外,SiO_2掺杂还可改善材料的电压非线性特性。MgO掺杂可进一步提高材料的压敏电压梯度。当Sb_2O_3,Si O2和Mg O掺杂量分别为2.8 mol%,0.3 mol%和0.2 mol%时,获得了压敏电压梯度、电压非线性系数和漏电流分别为470 V/mm,89和0.12μA的高梯度压敏陶瓷材料,该材料可承受峰值电流密度为2.7 k A/cm2的8/20μs波脉冲电流冲击。     

稀土Pr6O11掺杂水平对ZnO-Pr6O11-Co3O4-TiO2压敏电阻材料的微观结构和电学性能的影响

通过传统陶瓷工艺,在1350℃下烧结得到了不同稀土Pr6O11掺杂水平的ZnO-Pr6O11-Co3O4-TiO2压敏电阻材料,研究了Pr6O11掺杂水平对压敏电阻材料微观结构和电学性能的影响。结果表明:随着Pr6O11掺杂水平的变化,样品相组成没有发生变化,样品由ZnO、Pr6O11、Zn2TiO4和PrTiO34种相组成;Pr6O11掺杂既能促进样品烧结致密,还可抑制ZnO晶粒的生长;在Pr6O11掺杂量不超过2.0mol%时,Pr6O11掺杂水平提高可提高样品压敏电压,在Pr6O11掺杂量不超过1.5mol%时,Pr6O11掺杂水平提高可提高样品非线性系数,降低漏电流。     

Hydrothermal synthesis and conductive properties of Al-doped ZnO rod-like whiskers

The Al-doped ZnO rod-like whiskers were synthesized by a simple hydrothermal method. The resistivity of Al-doped ZnO whisker (AZO_w) samples significantly decreased with the increase of Al³⁺ concentration, and showed a minimum when Al³⁺ doping concentration was 2.0%. If Al³⁺ concentration continued to increase, namely more than 2.0%, the resistivity of Al-doped ZnO samples would increase. So, in this study the optimum Al doping concentration was 2.0%, and the lowest electric resistivity (3.959 × 10⁴ Ω cm) was obtained.     

Doping and annealing effects on ZnO:Cd thin films by sol-gel method

In this article, ZnO:Cd films were successfully deposited on glass substrates by a sol-gel technique. The influence of doping concentration and annealing temperature effects was carefully investigated. All films exhibited c-axis preferential orientation and optical transparency with visible transmittance >80%. The minimum room temperature resistivity of 0.0341 Ω cm was obtained with 10 at.% Cd doping under 600 °C annealing temperature. The optical band gap of ZnO:Cd film was reduced as Cd doping concentration increased, while the band gap increased with the increase of annealing temperature.     

基于团簇加连接原子模型定量分析阳离子掺杂ZnO电子载流子浓度

目的定量分析阳离子掺杂ZnO材料中最优化阳离子掺杂量及电子载流子浓度。方法基于团簇加连接原子模型,解析并建立阳离子掺杂ZnO材料的团簇式结构,计算最优阳离子掺杂量条件下的电子载流子浓度。根据理论分析结果,设计Sn掺杂ZnO材料,并利用磁控溅射方法制备Sn掺杂ZnO薄膜。通过紫外可见分光光度计、霍尔效应测试仪等分别评价Sn掺杂ZnO薄膜的透光率和电子载流子浓度。结果以纤锌矿ZnO为研究体系,基于团簇加连接原子模型,建立纤锌矿ZnO的团簇式{[Zn-O4]Zn3}。在此基础上,建立纤锌矿ZnO超团簇结构:{中心团簇式}-{第一近邻团簇式}6-{连接团簇式}={[Zn-O4]Zn3}-{[Zn-O4]Zn3}6-{[Zn-O4]Zn3}=Zn32O32。基于纤锌矿ZnO超团簇结构,建立阳离子掺杂ZnO的超团簇结构{[M-O4]Zn3}-{{[M-O4]Zn3}{[Zn-O4]Zn3}5}-{[M-O4]Zn3}=M3Zn29O32,给出最优化元素配比AM︰AZn=10.34%。根据阳离子掺杂ZnO的超团簇结构M3Zn29O32,定量计算出Al3Zn29O32的最优化电子载流子浓度为3.935×10^21 cm^–3,并分析实际应用的AlZn31O32薄膜的电子载流子浓度仅为最优化理论值1/10的原因。最终,设计并制备SnZn31O32薄膜,其在可见光波段(450~800nm)的平均透光率为80.25%±1.74%,电子载流子浓度为(7.72±1.68)×10^20 cm^–3。结论团簇加连接原子模型能够定量解析阳离子掺杂ZnO材料体系中掺杂量与电子载流子浓度,可为设计高性能阳离子掺杂ZnO材料提供理论指导。基于团簇加连接原子模型设计的SnZn31O32薄膜,具备透明导电性质,通过进一步的研究,有望成为具有高电子载流子浓度的新型透明导电氧化物材料。     

Improving color rendering index of Mn-doped ZnO nanorods on silicon-based substrate

Porous silicon pillar array(PSPA) samples which are ideal substantial materials with dominant electronic and luminescence properties were prepared by surface etching method. ZnO nanorods with or without Mn doping grown uniformly and aligned onto PSPA regardless of lattice matching show various photoluminescence(PL)properties. The doped Mn ions in ZnO nanorods were directly observed by X-ray photoelectron spectroscopy(XPS),and ZnO structures were detected by X-ray diffraction(XRD). As the doping concentration increases,XRD peaks of ZnO nanorods shift to low angle. The influences of doping Mn ions on luminescence properties of ZnO nanorods were investigated. Except for the ultraviolet(UV) PL band, the broad PL band is observed at visible region. The band could be divided into three separate bands(orange, green and red) by Lorentzian deconvolution. The intensity of orange PL band firstly increases then decreases, and then gets the maximum at the doping Mn-to-Zn molar ratio of 2.0:100.0 which is the most effective doping concentration. The green PL band is attributed to zinc vacancy of ZnO, the orange PL band to Mn ions recombination of itself, and the red PL band to oxygen vacancy of ZnO, respectively. As the Mn-doped ZnO nanorods could emit yellow green luminescence excited by UV radiation, and doped Mn ions could improve the color rendering index of the luminescence, the nanorods could be used as promising white-light emitters in the future.     

Optical properties and photocatalytic activity of Nd-doped ZnO powders

To improve the photocatalytic activity of zinc oxides, ZnO powders doped with different neodymium (Nd) concentrations were prepared via hydrothermal method. X-ray diffraction (XRD) together with X-ray photoelectron spectroscopy (XPS) patterns revealed that Nd atoms were successfully incorporated into the ZnO lattice. XRD pattern also showed some anisotropy of the powders. The photoluminescence (PL) spectrum demonstrated a strong and broad peak in the visible light region, and the intensity of visible light emission was enhanced by Nd-doping. The photocatalytic activity was evaluated by the degradation of methyl orange solution. It is shown that doping of Nd into ZnO induces an increase of the photocatalytic activity and it attains to optimum at 3% (mole fraction) doping concentration. The intense visible light emission and the enhanced photocatalytic activity were explained by the increase in electron hole pairs and induced defects like antisite oxygen O_Zn and interstitial oxygen O_i, due to the doping of Nd.     

电化学沉积Nd掺杂ZnO薄膜的结构和光学性质的研究

用电化学沉积方法制备出了Nd掺杂的ZnO薄膜,并研究其结构和光学性质。X-射线衍射谱的结果表明Nd3 替代Zn2 进入到ZnO晶格中,并没有引起杂相的出现。吸收谱的分析表明,随着掺杂浓度的增大,吸收峰向短波长方向移动 ,即发生蓝移。光致发光谱的结果表明随着Nd3 掺杂浓度的增大,紫外峰强度减小,可见光部分强度增大了。     

垂直生长于锌基底的Co掺杂ZnO纳米棒阵列显著室温铁磁性能

通过简单的水热合成法在锌片基底上一步制备了Co掺杂的ZnO纳米棒阵列。纳米棒在基底上均匀分布,取向一致,垂直于基底大面积生长。样品结构均为六方纤锌矿结构,具有高结晶质量,不含其它杂相。随着Co掺杂浓度的增加,紫外发射峰强度逐渐下降,近带隙发射峰的半峰宽也较纯ZnO变宽。拉曼光谱显示Co的掺杂使纳米棒出现了氧空位和锌填隙本征缺陷。随着Co浓度的增加这些缺陷也随之增加。掺杂纳米棒阵列的磁滞回线表明样品具有明显的铁磁特征,并有较大的矫顽力Hc~660 Oe。这种ZnO基稀磁半导体纳米棒阵列是一种在自旋电子器件中具有应用潜力的纳米材料。     

掺铝ZnO纳米粉的制备与气敏特性研究

用可溶性无机盐法(ISG法)制备掺杂Al^3 的ZnO纳米气敏材料，用D／Max0-rB型X-射线粉末衍射仪研究纳米晶的结构。结果表明制备的掺铝ZnO纳米材料属于六方晶系，纤锌矿结构。用Seherrer公式计算得ZnO和掺铝ZnO的平均晶粒分别为40nm和35nm。用掺铝的ZnO纳米粉做成气敏元件，测试了不同铝含量的纳米材料在不同浓度的乙醇气体和氢气下的敏感特性。结果表明随着气体浓度的增加，灵敏度逐渐上升；随着Al含量的减少，材料气敏灵敏性逐渐增强。当铝含量为Al／ZnO=O．5％(mol)时，对O．2％的乙醇气体的灵敏度最大可达到127。并讨论了纳米材料对敏感气体的物理吸附和化学吸附以及纳米氧化物的气敏机理。     

Effect of Co substitution on the structural and optical properties of ZnO nanoparticles synthesized by sol-gel route

Co doped ZnO nanoparticles were synthesized by sol-gel method and characterized by X-ray diffraction (XRD), Transmission electron microscopy (TEM), Energy dispersive X-ray analysis (EDAX), UV-Visible absorption spectroscopy and Fourier transform infrared spectroscopy (FTIR). XRD analysis revealed the formation of single phase structure of all samples which was further supported by FTIR data. With the increase in Co concentration from 0% to 5%, crystallite size was observed to vary from 27.1 to 21.3 nm. It suggests the prevention of crystal growth as a result of Co doping in ZnO. It was also evident from the absorption spectra that the absorbance tends to increase with the increase in dopant concentration. Optical band gap was found to increase slightly with the increase in Co content, confirming the size reduction as a result of Co doping.     

Growth of nitrogen-doped p-type ZnO thin films prepared by atomic layer epitaxy

Nitrogen-doped, p-type ZnO thin films were grown successfully on sapphire (0001) substrates by using atomic layer epitaxy (ALE). Zn(C2H5)2[Diethylzinc,DEZn], H2O and NH3 were used as a zinc precursor, an oxidant and a doping source gas, respectively. The lowest electrical resistivity of the p-type ZnO films grown by ALE and annealed at 1000 ℃ in an oxygen atmosphere for 1 h was 18.3 Ω·m with a hole concentration of 3.71×1017cm-3 . Low temperature-photoluminescence analysis and time-dependent Hall measurement results support that the nitrogen-doped ZnO after annealing is ap-type semiconductor.