千兆以太网与ATM

在高速互连领域中，千兆以太网作为一种新兴技术具有较好的可扩展性、兼容性和较低的价格。在对该技术的关键问题进行分析的基础上，将它详ＡＴＭ技术作了详细比较。     

新世纪新科技新研发设计

进入新世纪已有两年，世界电子技术究竟将怎样发展？在设计时代里，研究设计工作将如何进行？《新世纪新科技新研究设计》一文试图粗线条的回答上述问题。文章从电子工业三大领域——投资类、消费类、元器件分别作了一些技术展望，提出了一些重要发展技术。对今后开发工作具有重大意义的突破技术(disruptivetechnology)特别作了定义性解释和举例说明。文后对科研管理工作的发展也作了介绍。     

MEMS技术用于红外器件制作

MEMS技术是一项新兴的微细加工技术，已开始在各领域有了广泛应用。它可将信息获取、处理和执行等功能集成为一体化的微电子机械系统(MEMS)或微光电子机械系统(MO-EMS)，具有微小、智能、可执行、可集成、工艺兼容性好、成本低等特点，因此也开始被红外技术领域所采用，为该领域研究提供了一条新途径。文中简要介绍了MEMS技术的主要特点和工艺，并对MEMS技术在红外器件研制方面的应用作了详细叙述。     

相扫雷达中二级全并行查表馈相技术的应用研究

文章就二维相扫雷达布相时存在的计算量大、时间要求高、硬件复杂等问题提出了一种解决方法，特别对二级查表技术的具体实现作了较深入的讨论和分析，并且给出了部分数据，对查表技术在实时领域的应用也作了简单的阐述。     

光纤光栅、全光纤器件及其集成与光纤通信

光纤光栅技术的发展将可能在光纤通信、光纤传感等诸多高技术领域引起一场新的技术革命。为此，本文对光纤光栅的机制、制作工艺以及基于光纤光栅的全光纤光子线路与器件等作了简要介绍，并进一步提出和阐述了全光纤一维光子集成的构思。本文认定，光纤光栅技术的出现将是光纤通信领域继光纤放大器之后又一个具有里程碑意义的伟大事件。由此产生的全光纤光子线路及其集成将对光纤通信的发展产生巨大的推动作用。     

高亮度GaN基蓝色LED的研究进展

超高亮度GaN基蓝色LED的发展将会引起照明技术的一场革命，它是目前全球半导体领域研究和投资的特点。本文综合分析了GaN材料的特性及相应的材料生长和欧姆接触、刻蚀工艺等关键技术，并对GaN基蓝色LED器件的进一步改进及应用前景作了展望。     

微研磨技术

近年来，随着仪器类微型化技术的发展，针对工业和医用领域狭窄的地方作业困难这一问题，研究人员正在研究开发适用的微机械，对此，微机械的微型结构部件研制技术显得非常重要。本文将对微机械部件的加工方法一微研磨技术作以介绍。     

无源定位技术综述

在电子对抗领域中，无源定位已经得到人们的高度重视。本文力图对无源定位技术作一个总的介绍，使人们对这个领域内的基本技术有一个比较科学、全面的了解。根据本文的观点，人们在无源定位这个领域内将可能构造形式繁多的不同定位体制，实现比目前我们已有的实际设备好很多的设备。     

无线充电技术及其特殊应用前景

对无线充电技术及发展历程作了阐述,并对电磁感应式、磁共振式、无线电波式和电场耦合式等技术原理进行了分析。在目前无线充电技术面临的挑战和机遇状况下,展望了无线充电技术的应用前景,将在医用植入设备、无线传感网和防水密封电子设备等特殊领域将会有更广阔的应用。     

适用于牵引的功率变换器

列车牵引驱动器的发展主要取决于列车的重量、何种和削减成本的需求，功率模块是牵引驱动领域的关键因素之一。本文针对此关键因素，对建立在功率模块基础上的现行IGBT技术作了重要分析，并指出其技术发展趋势。     

Enhancing IC repairs by combining laser direct-writing of Cu and FIB techniques

The aim of this work was to demonstrate the combination of laser direct-writing of Cu and FIB techniques. Preliminary electrical resistivity measurements and a comparison between the pros and cons of both methods have been carried out. Some IC repair cases are presented where an FIB device has been used in combination with the laser deposition device developed in the microelectronics laboratory. Also, particular attention has been given to problems which are insoluble by the FIB technique but readily resolved by the laser system.     

Low voltage FE-STEM for characterization of state-of-the-art silicon SRAM

Low voltage (30 kV) field emission scanning transmission electron microscopy (FE-STEM) has been employed in the characterization of state-of-the-art semiconductor static random access memory (SRAM) using specimens prepared at several different thicknesses (70-180 nm). A focused ion beam (FIB) system, a FIB-SEM compatible specimen holder and an in-lens FE-SEM have been employed for alternating between FIB milling and SEM/ STEM imaging. As a result, ion implanted atom damage during manufacturing, grains in aluminium interconnects, poly silicon gates, thin metal barriers and a thin gate oxide layer were observed by low voltage FE-STEM. STEM, in-lens FESEM, FIB     

液态金属离子源聚焦离子束系统在微米/纳米技术中的应用

随着微米／纳米科学技术的发展,微细加工微区分析所用的主要技术之一－聚焦离子束技术引人注目。本文简述了具有液态金属离子源的聚焦离子束技术的主要功能,着重报道了近来该技术下述领域中的应用。     

Improvements in performance of focused ion beam cross-sectioning: aspects of ion-sample interaction

A gallium (Ga) focused ion beam (FIB) has been applied increasingly to 'site-specific' preparation of cross-sectional samples for transmission electron microscopy (TEM), scanning TEM, scanning electron microscopy and scanning ion microscopy. It is absolutely required for FIB cross-sectioning to prepare higher-quality samples in a shorter time without sacrificing the site specificity. The present paper clarifies the parameters that impose limitation on the following performances of the FIB cross-sectioning: milling rate, cross-sectioning at a right angle with respect to the sample surface, curtain structures formed on the cross sections, ion implantation and ion damage. All of these are discussed from the viewpoint of ion-sample interaction. Improvements for these performances achieved by diminishing their limiting origins or by correcting the resultants are described. Especially, the FIB scanning speed is significantly utilizable to improve the milling rate. A microsampling method, which allows the FIB incidence in a sidewards or upwards direction as well as downwards with respect to the microsample surface, is very effective to minimize the curtain structures.     

A review of focused ion beam technology and its applications in transmission electron microscopy

The role of focused ion beam (FIB) fabrication in the development of sample preparation techniques for transmission electron microscopy (TEM) has been described in this paper. Since the repeatability of FIB sampling and TEM observations has become important, the microsampling and in situ lift-out methods are currently in wide use. Furthermore, artifacts induced during FIB milling and the consequent difficulties with energy dispersive X-ray spectroscopy are detailed. The remarkably increased capability of scanning ion microscopy and its applications are also discussed.     

Specimen preparation for high-resolution transmission electron microscopy using focused ion beam and Ar ion milling

We have developed a focused ion beam (FIB)-Ar ion-milling technique for high-resolution transmission electron microscopy. A micrometresized specimen was mounted on a cross section of metal foil of a few micrometres thick, using FIB microsampling. Following this, a 2 degrees wedgeshaped part was made in the specimen using FIB. Finally, the specimen was milled using an Ar ion beam to remove the FIB-damaged layers. We applied the FIB-Ar ion milling technique to a CeO(2)/Gd(2)Zr(2)O(7) multilayer specimen, resulting in the crystal lattice fringes of both layers being clearly observable in comparison to a specimen finished using a Ga ion beam at an accelerating voltage of 10 kV.     

一种基于聚焦离子束技术的环境透射电镜 光阑清理方法

光阑是透射电子显微镜电子光学系统的重要部件之一,其对透射电镜的成像质量有着重要的影响,然而原位环境透射电镜由于在使用中经常需要通入气氛并配合加热,因污染累积导致光阑的使用寿命大为降低.本文针对传统真空高温灼烧清理光阑方法需要较强的经验性及成功率低的缺点,提出一种新的光阑清理方法.该方法使用聚焦离子束(FIB)可定点、高效地清理光阑孔边缘的各种污染物,在恢复光阑孔圆度的同时又不会对光阑的其他部分造成损伤而引起失效.最终测试结果表明清理后的光阑满足透射电镜的使用要求,因此这种基于FIB技术的加工手段为电镜工作者提供了一种高效、精确和无损的光阑清理方法.     

聚焦离子束(Focused Ion Beam)原理与其在半导体工业之应用

聚焦离子束被广泛应用于芯片电路修改、研磨、沉积和二次电子/离子成像。FIB对于新原型电路设计的修改以及离子间交互作用的基础研究具有独特之性能。使用极细的聚焦离子束,FIB技术可以进行比从前更加精确的产品失效分析。操作者可以快速地、选择性地去除绝缘层或金属层,以便进行集成电路下层信号的点针探测或材质分析。集成电路的断面切割还可以达到亚微米的精度。     

Application of a focused ion beam mill to the characterisation of a microstructure in tin plating on a Fe 42wt% Ni substrate

The application of a focused ion beam (FIB) mill equipped with a microsampling unit to a tin-plated specimen was reported briefly. Tin-plating has a serious problem: Whiskers are liable to grow on the surface of tinplates. In order to clarify the mechanism of the whisker growth, detail characterisation is conducted using transmission electron microscopy (TEM). However, it is difficult to prepare specimens for TEM observation without the influences of mechanical damages. It was demonstrated that FIB etching was successfully used to observe a three-dimensional microstructure by scanning ion microscopy (FIB-imaging) and to prepare thin films for TEM observation. The observation has revealed the formation of precipitates of Ni(3)Sn(4) that is considered to be strongly related to the whisker growth.     

Transmission electron microscopy on thin film of high density magnetic composite prepared by FIB method

A thin specimen of a high density magnetic composite (HDMC), which is a type of powder magnetic cores was prepared for transmission electron microscopy (TEM) using a focused ion beam (FIB) method. A homogeneous thin film containing an insulator boundary between the constituent Fe powders was obtained successfully. Using this thin film, detailed flow of magnetic flux was visualized by electron holography, and the magnetic flux density was estimated to be 1.73 +/- 0.09 T being consistent with that of a bulk HDMC (1.70 T). Moreover, through Lorentz microscopy, the characteristic magnetization process of HDMC was observed by applying the magnetic field up to approximately 8 kA/m.