On The General Relation Between /spl alpha/ and Q (Correspondence)

The relation between the quality factor Q and the attenuation constant /spl alpha/ of a transmission line has been known as follows: /spl alpha/ = /spl beta/ / /2Q where /spl beta/ is the phase constant. Recently from the following relation of propagation constant at resonance /spl Gamma/(/spl omega//sub 0/) + /spl part//spl Gamma/ / /spl part//spl omega/ /spl Delta//spl omega//spl cong/ i/spl beta/(/spl omega//sub 0/), where /spl Gamma/(/spl omega//sub 0/) = /spl alpha/(/spl omega//sub 0/) + i/spl beta/(/spl omega//sub 0/). Yeh derived a general relation between Q and /spl alpha/, namely, /spl alpha/ = /spl upsi//sub p/ / /spl upsi//sub g/ /spl beta/ / /2Q where /spl upsi//sub p/, and /spl upsi//sub g/ are the phase velocity and group velocity of the wave respectively. This general relation can be derived very simply from the generally accepted definition of /spl alpha/ and Q.     

Characterization of accumulation layer capacitance for extracting data on high-/spl kappa/ gate dielectrics

A new parameter extraction technique has been outlined for high-/spl kappa/ gate dielectrics that directly yields values of the dielectric capacitance C/sub di/, the accumulation layer surface potential quotient, /spl beta//sub acc/, the flat-band voltage, the surface potential /spl phi//sub s/, the dielectric voltage, the channel doping density and the interface charge density at flat-band. The parallel capacitance, C/sub p/(=C/sub sc/+C/sub it/), was found to be an exponential function of /spl phi//sub s/ in the strong accumulation regime, for seven different high-/spl kappa/ gate dielectrics. The slope of the experimental lnC/sub p/(/spl phi//sub s/) plot, i.e., |/spl beta//sub acc/|, was found to depend strongly on the physical properties of the high-/spl kappa/ dielectric, i.e., was inversely proportional to [(/spl phi//sub b/m/sup *//m)/sup 1/2/K/C/sub di/], where /spl phi//sub b/ is the band offset, and m/sup */ is the effective tunneling mass. Extraction of /spl beta//sub acc/ represented an experimental carrier confinement index for the accumulation layer and an experimental gate-dielectric direct-tunneling current index. /spl beta//sub acc/ may also be an effective tool for monitoring the effects of post-deposition annealing/processing.     

A new binary sequence family with low correlation and large size

For odd n=2l+1 and an integer /spl rho/ with 1/spl les//spl rho//spl les/l, a new family S/sub o/(/spl rho/) of binary sequences of period 2/sup n/-1 is constructed. For a given /spl rho/, S/sub o/(/spl rho/) has maximum correlation 1+2/sup n+2/spl rho/-1/2/, family size 2/sup n/spl rho//, and maximum linear span n(n+1)/2. Similarly, a new family of S/sub e/(/spl rho/) of binary sequences of period 2/sup n/-1 is also presented for even n=2l and an integer /spl rho/ with 1/spl les//spl rho/相似文献   

RF HBT oscillators with low-phase noise and high-power performance utilizing a (/spl lambda//4/spl plusmn//spl delta/) open-stubs resonator

This paper presents a new type of transmission-line resonator and its application to RF (microwave and millimeter-wave) heterojunction bipolar transistor (HBT) oscillators. The resonator is a parallel combination of two open stubs having length of /spl lambda//4/spl plusmn//spl delta/(/spl delta//spl Lt//spl lambda/), where /spl lambda/ is a wavelength at a resonant frequency. The most important feature of this resonator is that the coupling coefficient (/spl beta//sub C/) can be controlled by changing /spl delta/ while maintaining unloaded Q-factor (Q/sub u/) constant. Choosing a small value of /spl delta/ allows us to reduce /spl beta//sub C/ or equivalently to increase loaded Q-factor (Q/sub L/). Since coupling elements such as capacitors or electromagnetic gaps are not needed, /spl beta//sub C/ and Q/sub L/ can be precisely controlled based on mature lithography technology. This feature of the resonator proves useful in reducing phase noise and also in enhancing output power of microwave oscillators. The proposed resonator is applied to 18-GHz and 38-GHz HBT oscillators, leading to the phase noise of -96-dBc/Hz at 100-kHz offset with 10.3-dBm output power (18-GHz oscillator) and -104-dBc/Hz at 1-MHz offset with 11.9 dBm (38-GHz oscillator). These performances are comparable to or better than state-of-the-art values for GaAs- or InP-based planar-circuit fundamental-frequency oscillators at the same frequency bands.     

Entropy and the law of small numbers

Two new information-theoretic methods are introduced for establishing Poisson approximation inequalities. First, using only elementary information-theoretic techniques it is shown that, when S/sub n/=/spl Sigma//sub i=1//sup n/X/sub i/ is the sum of the (possibly dependent) binary random variables X/sub 1/,X/sub 2/,...,X/sub n/, with E(X/sub i/)=p/sub i/ and E(S/sub n/)=/spl lambda/, then D(P(S/sub n/)/spl par/Po(/spl lambda/)) /spl les//spl Sigma//sub i=1//sup n/p/sub i//sup 2/+[/spl Sigma//sub i=1//sup n/H(X/sub i/)-H(X/sub 1/,X/sub 2/,...,X/sub n/)] where D(P(S/sub n/)/spl par/Po(/spl lambda/)) is the relative entropy between the distribution of S/sub n/ and the Poisson (/spl lambda/) distribution. The first term in this bound measures the individual smallness of the X/sub i/ and the second term measures their dependence. A general method is outlined for obtaining corresponding bounds when approximating the distribution of a sum of general discrete random variables by an infinitely divisible distribution. Second, in the particular case when the X/sub i/ are independent, the following sharper bound is established: D(P(S/sub n/)/spl par/Po(/spl lambda/))/spl les/1//spl lambda/ /spl Sigma//sub i=1//sup n/ ((p/sub i//sup 3/)/(1-p/sub i/)) and it is also generalized to the case when the X/sub i/ are general integer-valued random variables. Its proof is based on the derivation of a subadditivity property for a new discrete version of the Fisher information, and uses a recent logarithmic Sobolev inequality for the Poisson distribution.     

A critical analysis on global convergence of Hopfield-type neural networks

This paper deals with the global convergence and stability of the Hopfield-type neural networks under the critical condition that M/sub 1/(/spl Gamma/)=L/sup -1/D/spl Gamma/-(/spl Gamma/W+W/sup T//spl Gamma/)/(2) is nonnegative for any diagonal matrix /spl Gamma/, where W is the weight matrix of the network, L=diag{L/sub 1/,L/sub 2/,...,L/sub N/} with L/sub i/ being the Lipschitz constant of g/sub i/ and G(u)=(g/sub 1/(u/sub 1/),g/sub 2/(u/sub 2/),...,g/sub N/(u/sub N/))/sup T/ is the activation mapping of the network. Many stability results have been obtained for the Hopfield-type neural networks in the noncritical case that M/sub 1/(/spl Gamma/) is positive definite for some positive definite diagonal matrix /spl Gamma/. However, very few results are available on the global convergence and stability of the networks in the critical case. In this paper, by exploring two intrinsic features of the activation mapping, two generic global convergence results are established in the critical case for the Hopfield-type neural networks, which extend most of the previously known globally asymptotic stability criteria to the critical case. The results obtained discriminate the critical dynamics of the networks, and can be applied directly to a group of Hopfield-type neural network models. An example has also been presented to demonstrate both theoretical importance and practical significance of the critical results obtained.     

Cyclic codes over GR(4/sup m/) which are also cyclic over /spl Zopf//sub 4/

Let GR(4/sup m/) be the Galois ring of characteristic 4 and cardinality 4/sup m/, and /spl alpha/_={/spl alpha//sub 0/,/spl alpha//sub 1/,...,/spl alpha//sub m-1/} be a basis of GR(4/sup m/) over /spl Zopf//sub 4/ when we regard GR(4/sup m/) as a free /spl Zopf//sub 4/-module of rank m. Define the map d/sub /spl alpha/_/ from GR(4/sup m/)[z]/(z/sup n/-1) into /spl Zopf//sub 4/[z]/(z/sup mn/-1) by d/spl alpha/_(a(z))=/spl Sigma//sub i=0//sup m-1//spl Sigma//sub j=0//sup n-1/a/sub ij/z/sup mj+i/ where a(z)=/spl Sigma//sub j=0//sup n-1/a/sub j/z/sup j/ and a/sub j/=/spl Sigma//sub i=0//sup m-1/a/sub ij//spl alpha//sub i/, a/sub ij//spl isin//spl Zopf//sub 4/. Then, for any linear code C of length n over GR(4/sup m/), its image d/sub /spl alpha/_/(C) is a /spl Zopf//sub 4/-linear code of length mn. In this article, for n and m being odd integers, it is determined all pairs (/spl alpha/_,C) such that d/sub /spl alpha/_/(C) is /spl Zopf//sub 4/-cyclic, where /spl alpha/_ is a basis of GR(4/sup m/) over /spl Zopf//sub 4/, and C is a cyclic code of length n over GR(4/sup m/).     

The inequalities of quantum information theory

Let /spl rho/ denote the density matrix of a quantum state having n parts 1, ..., n. For I/spl sube/N={1, ..., n}, let /spl rho//sub I/=Tr/sub N/spl bsol/I/(/spl rho/) denote the density matrix of the state comprising those parts i such that i/spl isin/I, and let S(/spl rho//sub I/) denote the von Neumann (1927) entropy of the state /spl rho//sub I/. The collection of /spl nu/=2/sup n/ numbers {S(/spl rho//sub I/)}/sub I/spl sube/N/ may be regarded as a point, called the allocation of entropy for /spl rho/, in the vector space R/sup /spl nu//. Let A/sub n/ denote the set of points in R/sup /spl nu// that are allocations of entropy for n-part quantum states. We show that A~/sub n/~ (the topological closure of A/sub n/) is a closed convex cone in R/sup /spl nu//. This implies that the approximate achievability of a point as an allocation of entropy is determined by the linear inequalities that it satisfies. Lieb and Ruskai (1973) have established a number of inequalities for multipartite quantum states (strong subadditivity and weak monotonicity). We give a finite set of instances of these inequalities that is complete (in the sense that any valid linear inequality for allocations of entropy can be deduced from them by taking positive linear combinations) and independent (in the sense that none of them can be deduced from the others by taking positive linear combinations). Let B/sub n/ denote the polyhedral cone in R/sup /spl nu// determined by these inequalities. We show that A~/sub n/~=B/sub n/ for n/spl les/3. The status of this equality is open for n/spl ges/4. We also consider a symmetric version of this situation, in which S(/spl rho//sub I/) depends on I only through the number i=/spl ne/I of indexes in I and can thus be denoted S(/spl rho//sub i/). In this case, we give for each n a finite complete and independent set of inequalities governing the symmetric allocations of entropy {S(/spl rho//sub i/)}/sub 0/spl les/i/spl les/n/ in R/sup n+1/.     

Evaluation of the Green's function for the mixed potential integral equation (MPIE) method in the time domain for layered media

In the use of the time-domain integral equation (TDIE) method for the analysis of layered media, it is important to have the time-domain layered medium Green's function computed for many source-to-field distances /spl rho/ and time instants t. In this paper, a numerical method is used that computes the mixed potential Green's functions G/sub v/(/spl rho/,t) and G/sub A/(/spl rho/,t) for a multilayered medium for many /spl rho/'s and t's simultaneously. The method is applicable to multilayered media and for lossless or lossy dispersive media. Salient features of the method are: 1) the use of complex /spl omega/ so that the surface wave poles are lifted off the real k/sub /spl rho// axis such that pole extractions are not required; 2) the use of half-space extraction so that the integrand for the Sommerfeld integral decays exponentially along the k/sub /spl rho// axis to obtain fast convergence of the integral; and 3) the use of the fast Hankel transform so that the Green's function is calculated for many values of /spl rho/ simultaneously. For a four-layer medium, we illustrate the numerical results by a three-dimensional plot of /spl rho/G/sub v/(/spl rho/,t) versus /spl rho/ and t and demonstrate the space-time evolution of these Green's functions. For a maximum frequency range of 8 GHz, the method requires only a few CPU minutes to compute a table of 100 (points in /spl rho/) /spl times/ 168 (points in t) uniformly spaced values of G/sub v/(/spl rho/,t) on an 867-MHz Pentium PC.     

On the theory of 1/f noise of semi-insulating materials

The 1/f noise phenomena associated with devices involving semi-insulating materials, for instance GaAs MESFET's on semi-insulating GaAs, has long been a perplexing problem. In this particular case the 1/f noise corner frequency can be up to 100 MHz before the mean square noise current at the drain is dominated by the Nyquist noise associated with the channel conductance. No reasonable explanation has ever been given, although there are many different theories. 1/f noise is a common phenomena in nature and other devices involving semi-insulating materials. We propose here that this 1/f noise is a bulk phenomena associated with localized high frequency variations and long range low frequency fluctuations, the lowest frequency being limited only by the volume of the material. Specifically the proposal here is that injection of a current I into a semi-insulating material will result in a mean square noise voltage at the point of injection given by v/sub n//sup 2/~=2(kT/q)q/spl Delta/fR(/spl omega//sub c///spl omega/) Volts/sup 2/ where /spl omega//sub c/=1/t/sub t/, for the radian frequencies, /spl omega/, larger than /spl omega//sub c/ which is the reciprocal of the transit time of the carriers. For a long sample and long transit times then this 1/f noise voltage due to current injection will be larger than the Nyquist mean square noise of the sample alone as long as the DC voltage developed across the semi-insulating sample exceeds ((2kT/q)l/sup 2/(/spl omega///spl mu/))/sup 1/2/. This theory then gives the 1/f or 1//spl omega/ frequency dependence. The dc current I might be injected for instance by the substrate current in a GaAs MESFET being injected into the semi-insulating substrate, or gate current in an IGET being injected into the gate insulator.<>     

A class of 1-generator quasi-cyclic codes

If R = F/sub q/[x/spl rceil/]/(x/sup m/ - 1), S = F/sub qn/[x]/(x/sup m/ - 1), we define the mapping a_(x) /spl rarr/ A(x) =/spl sigma//sub 0//sup n-1/a/sub i/(x)/spl alpha//sub i/ from R/sup n/ onto S, where (/spl alpha//sub 0/, /spl alpha//sub i/,..., /spl alpha//sub n-1/) is a basis for F/sub qn/ over F/sub q/. This carries the q-ray 1-generator quasicyclic (QC) code R a_(x) onto the code RA(x) in S whose parity-check polynomial (p.c.p.) is defined as the monic polynomial h(x) over F/sub q/ of least degree such that h(x)A(x) = 0. In the special case, where gcd(q, m) = 1 and where the prime factorizations of x/sub m/ 1 over F/sub q/ and F/sub qn/ are the same we show that there exists a one-to-one correspondence between the q-ary 1-generator quasis-cyclic codes with p.c.p. h(x) and the elements of the factor group J* /I* where J is the ideal in S with p.c.p. h(x) and I the corresponding quantity in R. We then describe an algorithm for generating the elements of J*/I*. Next, we show that if we choose a normal basis for F/sub qn/ over F/sub q/, then we can modify the aforementioned algorithm to eliminate a certain number of equivalent codes, thereby rending the algorithm more attractive from a computational point of view. Finally in Section IV, we show how to modify the above algorithm in order to generate all the binary self-dual 1-generator QC codes.     

A minimum cost heterogeneous sensor network with a lifetime constraint

We consider a heterogeneous sensor network in which nodes are to be deployed over a unit area for the purpose of surveillance. An aircraft visits the area periodically and gathers data about the activity in the area from the sensor nodes. There are two types of nodes that are distributed over the area using two-dimensional homogeneous Poisson point processes; type 0 nodes with intensity (average number per unit area) /spl lambda//sub 0/ and battery energy E/sub 0/; and type 1 nodes with intensity /spl lambda//sub 1/ and battery energy E/sub 1/. Type 0 nodes do the sensing while type 1 nodes act as the cluster heads besides doing the sensing. Nodes use multihopping to communicate with their closest cluster heads. We determine them optimum node intensities (/spl lambda//sub 0/, /spl lambda//sub 1/) and node energies (E/sub 0/, E/sub 1/) that guarantee a lifetime of at least T units, while ensuring connectivity and coverage of the surveillance area with a high probability. We minimize the overall cost of the network under these constraints. Lifetime is defined as the number of successful data gathering trips (or cycles) that are possible until connectivity and/or coverage are lost. Conditions for a sharp cutoff are also taken into account, i.e., we ensure that almost all the nodes run out of energy at about the same time so that there is very little energy waste due to residual energy. We compare the results for random deployment with those of a grid deployment in which nodes are placed deterministically along grid points. We observe that in both cases /spl lambda//sub 1/ scales approximately as /spl radic/(/spl lambda//sub 0/). Our results can be directly extended to take into account unreliable nodes.     

Compression mappings on primitive sequences over Z/(p/sup e/)

Let Z/(p/sup e/) be the integer residue ring with odd prime p/spl ges/5 and integer e/spl ges/2. For a sequence a_ over Z/(p/sup e/), there is a unique p-adic expansion a_=a_/sub 0/+a_/spl middot/p+...+a_/sub e-1//spl middot/p/sup e-1/, where each a_/sub i/ is a sequence over {0,1,...,p-1}, and can be regarded as a sequence over the finite field GF(p) naturally. Let f(x) be a primitive polynomial over Z/(p/sup e/), and G'(f(x),p/sup e/) the set of all primitive sequences generated by f(x) over Z/(p/sup e/). Set /spl phi//sub e-1/ (x/sub 0/,...,x/sub e-1/) = x/sub e-1//sup k/ + /spl eta//sub e-2,1/(x/sub 0/, x/sub 1/,...,x/sub e-2/) /spl psi//sub e-1/(x/sub 0/,...,x/sub e-1/) = x/sub e-1//sup k/ + /spl eta//sub e-2,2/(x/sub 0/,x/sub 1/,...,x/sub e-2/) where /spl eta//sub e-2,1/ and /spl eta//sub e-2,2/ are arbitrary functions of e-1 variables over GF(p) and 2/spl les/k/spl les/p-1. Then the compression mapping /spl phi//sub e-1/:{G'(f(x),p/sup e/) /spl rarr/ GF(p)/sup /spl infin// a_ /spl rarr/ /spl phi//sub e-1/(a_/sub 0/,...,a_/sub e-1/) is injective, that is, a_ = b_ if and only if /spl phi//sub e-1/(a_/sub 0/,...,a_/sub e-1/) = /spl phi//sub e-1/(b_/sub 0/,...,b_/sub e-1/) for a_,b_ /spl isin/ G'(f(x),p/sup e/). Furthermore, if f(x) is a strongly primitive polynomial over Z/(p/sup e/), then /spl phi//sub e-1/(a_/sub 0/,...,a_/sub e-1/) = /spl psi//sub e-1/(b_/sub 0/,...,b_/sub e-1/) if and only if a_ = b_ and /spl phi//sub e-1/(x/sub 0/,...,x/sub e-1/) = /spl psi//sub e-1/(x/sub 0/,...,x/sub e-1/) for a_,b_ /spl isin/ G'(f(x),p/sup e/).     

Time-frequency localisation of Shannon wavelet packets

It is well known that the 2/spl pi/ minimally supported frequency scaling function /spl phi//sup /spl alpha//(x) satisfying /spl phi//spl circ//sup /spl alpha//(/spl omega/)=/spl chi//sub (-/spl alpha/,2/spl pi/-/spl alpha/)/(/spl omega/), 0相似文献   

The empirical distribution of rate-constrained source codes

Let X = (X/sub 1/,...) be a stationary ergodic finite-alphabet source, X/sup n/ denote its first n symbols, and Y/sup n/ be the codeword assigned to X/sup n/ by a lossy source code. The empirical kth-order joint distribution Q/spl circ//sup k/[X/sup n/,Y/sup n//spl rceil/(x/sup k/,y/sup k/) is defined as the frequency of appearances of pairs of k-strings (x/sup k/,y/sup k/) along the pair (X/sup n/,Y/sup n/). Our main interest is in the sample behavior of this (random) distribution. Letting I(Q/sup k/) denote the mutual information I(X/sup k/;Y/sup k/) when (X/sup k/,Y/sup k/)/spl sim/Q/sup k/ we show that for any (sequence of) lossy source code(s) of rate /spl les/R lim sup/sub n/spl rarr//spl infin//(1/k)I(Q/spl circ//sup k/[X/sup n/,Y/sup n//spl rfloor/) /spl les/R+(1/k)H (X/sub 1//sup k/)-H~(X) a.s. where H~(X) denotes the entropy rate of X. This is shown to imply, for a large class of sources including all independent and identically distributed (i.i.d.). sources and all sources satisfying the Shannon lower bound with equality, that for any sequence of codes which is good in the sense of asymptotically attaining a point on the rate distortion curve Q/spl circ//sup k/[X/sup n/,Y/sup n//spl rfloor//spl rArr//sup d/P(X/sup k/,Y~/sup k/) a.s. whenever P(/sub X//sup k//sub ,Y//sup k/) is the unique distribution attaining the minimum in the definition of the kth-order rate distortion function. Consequences of these results include a new proof of Kieffer's sample converse to lossy source coding, as well as performance bounds for compression-based denoisers.     

More results on the weight enumerator of product codes

We consider the product code C/sub p/ of q-ary linear codes with minimum distances d/sub c/ and d/sub r/. The words in C/sub p/ of weight less than d/sub r/d/sub c/+max(d/sub r//spl lceil/(d/sub c//g)/spl rceil/,d/sub c//spl lceil/(d/sub r//q)/spl rceil/) are characterized, and their number is expressed in the number of low-weight words of the constituent codes. For binary product codes, we give an upper bound on the number of words in C/sub p/ of weightless than min(d/sub r/(d/sub c/+/spl lceil/(d/sub c//2)/spl rceil/+1)), d/sub c/(d/sub r/+/spl lceil/(d/sub r//2)/spl rceil/+1) that is met with equality if C/sub c/ and C/sub r/ are (extended) perfect codes.     

Computer-Aided Design of Three-Port Waveguide Junction Circulators

The complete performance of a lossless three-port H-plane waveguide junction loaded coaxially with various inhomogeneous ferrite cylanders has been evaluated over the waveguide bandwidth and compared with experiment. Qualitative agreement between the predicted and measured performance was generally good using only the first three modes, n=0/spl plusmn/1. It has been shown theoretically and verified experimentally that if the 4/spl pi/M/sub s/ of a homogeneous rod or the internal field is increased, the circulation frequency f/sub 0/ increases; conversely, if the pemittivity is increased, f/sub 0/ decreases. These conflicting effects are modified when the magnetization 4/spl pi/M/sub s/ and permittivity /spl epsiv/ are inhomogeneous. For example, if the 4/spl pi/M/sub s/(/spl gamma/) is small at the outer surface of the rod (with permittivity held constant), the effect on f/sub 0/ is very small; but if 4/spl pi/M/sub s/(spl gamma) approaches zero for /spl gamma/ small, then f/sub 0/ may decrease significantly. On the other hand, if /spl epsiv//sub/spl gamma//(/spl gamma/) approaches unity near the outer surface of the rod, f/sub 0/ may increase significantly; but if /spl epsiv//sub/spl gamma//(/spl gamma/) approaches unity near the center of the rod, f/sub 0/ is affected relatively little. The inhomogeneous structure has also shown that decreasing the ferrite volume may improve the performance, and high-power applications are suggested. With a conducting pin down the center of the ferrite, relative bandwidths of 40-50 percent are predicted.     

Low-Temperature Materials and Thin Film Transistors for Flexible Electronics

This paper addresses the low-temperature deposition processes and electronic properties of silicon based thin film semiconductors and dielectrics to enable the fabrication of mechanically flexible electronic devices on plastic substrates. Device quality amorphous hydrogenated silicon (a-Si:H), nanocrystalline silicon (nc-Si), and amorphous silicon nitride (a-SiN/sub x/) films and thin film transistors (TFTs) were made using existing industrial plasma deposition equipment at the process temperatures as low as 75/spl deg/C and 120/spl deg/C. The a-Si:H TFTs fabricated at 120/spl deg/C demonstrate performance similar to their high-temperature counterparts, including the field effect mobility (/spl mu//sub FE/) of 0.8 cm/sup 2/V/sup -1/s/sup -1/, the threshold voltage (V/sub T/) of 4.5 V, and the subthreshold slope of 0.5 V/dec, and can be used in active matrix (AM) displays including organic light emitting diode (OLED) displays. The a-Si:H TFTs fabricated at 75/spl deg/C exhibit /spl mu//sub FE/ of 0.6 cm/sup 2/V/sup -1/s/sup -1/, and V/sub T/ of 4 V. It is shown that further improvement in TFT performance can be achieved by using n/sup +/ nc-Si contact layers and plasma treatments of the interface between the gate dielectric and the channel layer. The results demonstrate that with appropriate process optimization, the large area thin film Si technology suits well the fabrication of electronic devices on low-cost plastic substrates.     

Correlating drain-current with strain-induced mobility in nanoscale strained CMOSFETs

The correlation between channel mobility gain (/spl Delta//spl mu/), linear drain-current gain (/spl Delta/I/sub dlin/), and saturation drain-current gain (/spl Delta/Idsat) of nanoscale strained CMOSFETs are reported. From the plots of /spl Delta/I/sub dlin/ versus /spl Delta/I/sub dsat/ and ballistic efficiency (Bsat,PSS), the ratio of source/drain parasitic resistance (R/sub SD,PSS/) to channel resistance (R/sub CH,PSS/) of strained CMOSFETs can be extracted. By plotting /spl Delta//spl mu/ versus /spl Delta/I/sub dlin/, the efficiency of /spl Delta//spl mu/ translated to /spl Delta/I/sub dlin/ is higher for strained pMOSFETs than strained nMOSFETs due to smaller RSD,PSS-to-RCH,PSS ratio of strained pMOSFETs. It suggests that to exploit strain benefits fully, the RSD,PSS reduction for strained nMOSFETs is vital, while for strained pMOSFETs the /spl Delta/I/sub dlin/-to-/spl Delta//spl mu/ sensitivity is maintained until R/sub SD,PSS/ becomes comparable to/or higher than R/sub CH,PSS/.