A novel high-speed polymeric EO Modulator based on a combination of a microring resonator and an MZI

A Mach-Zehnder interferometer with an electrooptic polymer mircroring resonator adjacent to one of its branches is realized in a polymer layer stack. The microresonator is defined by reactive ion etching in the nonlinear PMMA-DR1 polymer and waveguide definition is done without etching, by using a negative photoresist (SU8) as waveguide layer. Electrooptic coefficients of 10 pm/V and modulation frequencies of 1 GHz were measured.     

Research and Design of Ge0.6Si0.4／Si Strained—layer Superlattice Planar Optical Waveguide

Calculation shows that the refraction index of Ge0.6Si0.4/Si strained-layer superlattice n≈3.64,when Lw=9 nm and Lb=24 nm.An algorithm of numerical iteration for effective refraction index is emploted to obtain different effective refraction indexes at different thickness(L) .As a result, the thickness of Ge0.6Si0.4/Si strained-layer superlattice optical waveguide,L≤363 nm, can be determlned, which is very important for designing waveguide devices.An optical waveguidecan be madeinto a nanometer device by using Ge0.6Si0.4/Si strained-layer superlattice.     

Optical study of porous silicon buried waveguides fabricated from p-type silicon

The realisation of optical buried waveguides fabricated from porous silicon layers is presented. The refractive index of porous silicon layer varies according to its porosity and its oxidisation process conditions. So either step or graded index waveguides are achieved. These waveguides are formed by a localised anodisation of heavily doped p-type silicon wafers. Measurements at a wavelength of 1.3 μm yield waveguide losses below 4 dB/cm. The waveguides are also characterised by the near-field-guided mode profile at 1.3 μm. This study deals with the modulation of the waveguiding-layer refractive index and the losses on waveguides fabricated from p⁺.     

Bending properties in oxidized porous silicon waveguides

The greatest limit in high-speed communications between different circuit blocks is due to the delays introduced by metal interconnections. Knock-down wire communication bottleneck is, therefore, one of the best goals that current research could reach in the field of fast electronics. A possible solution is to build fast optical links and even better if the technology is based on silicon. To attain these ends, we have made studies into possibility to fabricate optical waveguide based on oxidized porous silicon. In the last few years, such a device was realized and characterized. Waveguiding in the visible and in the near infrared was demonstrated, with propagation losses of about 3–5 dB/cm for a light with a wavelength of 632.8 nm. Moreover, a design feature of an integrated waveguide based on oxidized porous silicon is that it offers a spontaneous bending of the waveguiding layer at its ends. The edge bending is provided by a convex camber of a leading edge of forming porous silicon. This bending can be exploited to promote a vertical light output with no use of any additional devices. The paper discusses the properties of edge bending, evaluation of the light losses depending on the radius of curvature, and analysis of possibilities to reduce these losses.     

On the route towards Si-based optical interconnects

We have developed and fabricated a prototype of optical interconnects on a Si substrate. The original device design includes an aluminum–porous silicon light-emitting diode connected with a photodetector by an alumina waveguide. In order to minimize optical losses, the waveguide has been realized by subsequent deposition of three aluminum layers among which the intermediate one was doped with a titanium large refractive index layer. This multilayer structure was then anodically oxidized to form an Al₂O₃/Al₂O₃+TiO₂/Al₂O₃ layered waveguide. In the integrated optoelectronic unit it provides up to 50% increase of the detector response with respect to a waveguide of pure Al₂O₃. Optical losses in the visible range have been estimated to be about 1 dB/cm. Another method for increasing the detector response through the use of a microcavity is discussed.     

Polymeric digital optical modulator based on asymmetric branch

A digital optical modulator based on an asymmetric Y-branch waveguide is proposed and fabricated by using an electro-optic polymer. The operating point is initially shifted to the off-state utilising the asymmetry in the branch to provide an initial zero-state with no electrical bias. It has been confirmed that the high extinction ratio can be obtained with a low drive voltage. An extinction ratio of 25 dB is demonstrated for a drive voltage of 20V using a polymer PMMA-DR1 with r_ss of 5 pm/V at 1.3 μm     

多孔硅/聚合物复合膜光学各向异性的研究

首次用二维圆柱孔模型研究了多孔硅/聚合物复合膜的光学各向异性,求出了光学各向异性参数。实验上制备出了多孔硅/PMMA复合膜平面波导,采用棱镜耦合m线方法测量了复合膜的折射率。理论分析与实验结果基本相符。研究结果表明,多孔硅膜呈现出正单轴晶体的特征,由TE和TM模射所确定的折射率分别对应寻常光折射率和非寻常光折射率。多孔硅/PMMA复合膜光学各向异性随聚合物嵌入率的增加而减小。光学各向异性也随孔隙率的不同而变化,当初始孔隙率为73%时,光学各向异性参数β取最大值。     

背面多孔硅对SIMOX中铜杂质的吸除作用

在SIMOX材料的背面成功地制备了多孔硅层,再在正面故意注入1×1015cm-2剂量的铜杂质。经900℃退火,二次离子质谱（SIMS）测试表明钢杂质能穿过理层SiO2并在背面多孔硅处富集。用剖面投射电子显微镜（XTEM）分析了埋层SiO2和背面多孔硅层的微观结构,背面多孔硅层及其多孔硅层同硅衬底之间“树技状”的过渡区被认为是铜杂质有效的吸除中心。     

Characterization of an Oxidized Porous Silicon Layer by Complex Process Using RTO and the Fabrication of CPW‐Type Stubs on an OPSL for RF Application

This paper proposes a 10‐µm thick oxide layer structure that can be used as a substrate for RF circuits. The structure has been fabricated using an anodic reaction and complex oxidation, which is a combined process of low‐temperature thermal oxidation (500 °C, for 1 hr at H₂O/O₂) and a rapid thermal oxidation (RTO) process (1050 °C, for 1 min). The electrical characteristics of the oxidized porous silicon layer (OPSL) were almost the same as those of standard thermal silicon dioxide. The leakage current density through the OPSL of 10 µm was about 10 to 50 nA/cm² in the range of 0 to 50 V. The average value of the breakdown field was about 3.9 MV/cm. From the X‐ray photo‐electron spectroscopy (XPS) analysis, surface and internal oxide films of OPSL prepared by a complex process were confirmed to be completely oxidized. The role of the RTO process was also important for the densification of the porous silicon layer (PSL) oxidized at a lower temperature. The measured working frequency of the coplanar waveguide (CPW) type short stub on an OPSL prepared by the complex oxidation process was 27.5 GHz, and the return loss was 4.2 dB, similar to that of the CPW‐type short stub on an OPSL prepared at a temperature of 1050 °C (1 hr at H2O/O2). Also, the measured working frequency of the CPW‐type open stub on an OPSL prepared by the complex oxidation process was 30.5 GHz, and the return was 15 dB at midband, similar to that of the CPW‐type open stub on an OPSL prepared at a temperature of 1050 °C (1 hr at H₂O/O₂).     

Low-loss CaxBa1−xNb2O6 ridge waveguide for electro-optic devices

Optical ridge waveguide using calcium barium niobate (CBN) on silicon substrate for the first time is designed, fabricated and characterized for future integrated electro-optic devices. To obtain single-mode propagation, the CBN thin strip is designed to be surrounded by thick silicon dioxide layer forming a ridge waveguide. Deposition of CBN film on profiled silicon dioxide introduces spatial separation which solves the CBN etching problem. Fabrication, edge polishing and near-field mode profile measurement of the waveguide are carried out. The measurement is in good agreement with the simulation and an exact loss as low as 2.15 dB/cm was obtained for the fabricated waveguide.     

用电化学腐蚀法制备氧化多孔硅波导定向耦合器

用一种聚合物材料薄膜作为掩膜 ,通过在电化学腐蚀过程中控制腐蚀电流和时间 ,首次制备出了氧化多孔硅波导定向耦合器。实验中用波长为 980nm的激光作为信号光源 ,观测到了样品的耦合光信号。给出了耦合器耦合系数不确定的因素 ,同时也分析了多孔硅波导传输损耗形成的原因。     

Evaluation of the influence of an embedded porous silicon layer on the bulk lifetime of epitaxial layers and the interface recombination at the epitaxial layer/porous silicon interface

Porous silicon plays an important role in the concept of wafer‐equivalent epitaxial thin‐film solar cells. Although porous silicon is beneficial in terms of long‐wavelength optical confinement and gettering of metals, it could adversely affect the quality of the epitaxial silicon layer grown on top of it by introducing additional crystal defects such as stacking faults and dislocations. Furthermore, the epitaxial layer/porous silicon interface is highly recombinative because it has a large internal surface area that is not accessible for passivation. In this work, photoluminescence is used to extract the bulk lifetime of boron‐doped (10¹⁶/cm³) epitaxial layers grown on reorganised porous silicon as well as on pristine mono‐crystalline, Czochralski, p⁺ silicon. Surprisingly, the bulk lifetime of epitaxial layers on top of reorganised porous silicon is found to be higher (~100–115 µs) than that of layers on top of bare p⁺ substrate (32–50 µs). It is believed that proper surface closure prior to epitaxial growth and metal gettering effects of porous silicon play a role in ensuring a higher lifetime. Furthermore, the epitaxial layer/porous silicon interface was found to be ~250 times more recombinative than an epitaxial layer/p⁺ substrate interface (S ≅ 10³ cm/s). However, the inclusion of an epitaxially grown back surface field on top of the porous silicon effectively shields minority carriers from this highly recombinative interface. Copyright © 2013 John Wiley & Sons, Ltd.     

A novel biosensor with enhanced sensitivity based on grating coupled double-layered porous silicon waveguide

The enhanced sensitivity of a guided mode biosensor is analyzed by employing double-layered porous silicon grating structures. The grating-coupled waveguide structure consists of two porous silicon grating layers with different refractive indices. simulations are carried out by changing the refractive index, which is due to the binding of biological molecules on the porous silicon pore can increase the refractive index of porous silicon. The numerical results show that this novel guided mode biosensor with a double-layered grating can provide not only a very high sensitivity but also a better reflectivity characteristic.     

Isolation of silicon film grown on porous silicon layer

We have investigated a new technology for dielectric isolation of a Si film grown epitaxially on a porous silicon layer. After oxidation of the porous silicon layer, a Si on Ohcidized Porous Silicon(SOPS) structure can be obtained. It is proposed that micropores pinch off quickly in the interfacial region between the porous silicon layer and the epitaxial film. A minimum yield calculated from Rutherford backscattering spectra of the epitaxial silicon film is 5.3%, and an electron Hall mobility of 600cm²/V.s is obtained in the film with a carrier concentration of 1 x 10¹⁷ /cm³. MOSFETs were fabricated on the SOPS structure.     

Numerical Spectral Model Based on BPM for Er-doped Waveguide Amplifiers

A spectral numerical analysis method to analyze the Er-doped waveguide amplifiers（EDWA） in wavelength division multiplexing is presented. This model is based on finite difference beam propagation method modified by Douglas scheme, which can efficiently reduce the truncation error and time consumption. By superposing the Lorentzian function for the experimental curves, the spectral properties of EDWA can be investigated. Results show that the pump efficiency of EDWA pumped at 980 nm is higher than that at 1 480 nm. Meanwhile, by rationally increasing the pump length and the erbium concentration, larger signal gains can be acquired. Taking account of the up-conversion and cross-relaxation effects of cooperation, the spectrum analysis of highly doped EDWA is carried out over a wider frequency band.     

360-nm Photoluminescence from Silicon Oxide Films Embedded with Silicon Nanocrystals

Si-rich silicon oxide films were deposited by RF magnetron sputtering onto composite Si/SiO2 targets. After annealed at different temperature, the silicon oxide films embedded with silicon nanocrystals were obtained. The photoluminescenee（PL） from the silicon oxide films embedded with silicon nanocrystals was observed at room temperature. The strong peak is at 360 nm, its position is independent of the annealing temperature. The origin of the 360-nm PL in the silicon oxide films embedded with silicon nanoerystals was discussed.     

低阻硅衬底上形成的低损耗共平面波导传输线

在厚膜多孔硅 (PS) /氧化多孔硅 (OPS)衬底上 ,结合聚酰亚胺涂层改善表面 ,研制低损耗、高性能射频 (RF) /微波 (MW)共平面波导CPW(CoplanarWaveguide) .通过在N和P型硅上形成不同厚度PS膜 ,并对其上的CPW进行分析比较 ,厚膜PS与石英的共面波导插入损耗非常接近 ,远小于在 2 0 0 0Ω·cm高阻硅上形成的多晶硅 -氧化硅组合衬底 :在 0 33GHz范围 ,插入损耗小于 5dB/ 1.2cm ;33 4 0GHz范围 ,小于 7.5dB/ 1.2cm .     

偏振不灵敏硅基二氧化硅阵列波导光栅设计

以深刻蚀和热氧化工艺为基础,提出了一种新的阵列波导光栅(AWG)制备技术.这一工艺可使AWG中的波导侧向留有一硅层.采用有限元法和有限差分束传播法分别计算了存在这一硅层时的波导应力分布和有效折射率.结果表明由于这一侧向硅层的存在,使AWG中波导在水平和垂直方向的应力趋于一致,AWG的偏振相关波长明显减小.     

一种硅基选择性外延生长的锗波导光探测器

制作了一种硅接触侧向PIN型Ge波导光探测器,叙述了Si基选择性Ge外延层的制作流程,介绍了Ge波导光控测器的整体结构及制作流程。对该Ge波导光探测器的响应度、暗电流、带宽等参数进行了测试。结果表明,该Ge波导光探测器在-1 V偏压下的暗电流为8.3 nA,在1 550 nm处的响应度为0.85 A/W,3 dB带宽为29 GHz。     

多孔硅发光—纳米硅量子海绵中的量子约束

多孔硅的发光是源自其最表面层,该层是非晶态的。本研究揭示其结构是随机分布在此表面的纳米尺度的硅。多孔硅的微结构好象量子海绵,没有观察到“线”状结构,是一种无序材料。多孔硅的发光极象是由于这种纳米硅原子簇中的量子限制。