高温热循环对LP-15聚酰亚胺复合材料界面性能的影响

研究热循环对LP-15/G827聚酰亚胺复合材料界面及其力学性能的影响。结果表明:LP-15浇铸体的热膨胀系数在45×10-6/℃左右,远大于LP-15/G827聚酰亚胺复合材料的热膨胀系数(0.1×10-6/℃～0.3×10-6/℃)。复合材料的层间剪切强度和界面剪切强度均随热循环次数的增加而迅速降低,当热循环次数达到30次以后,层间剪切强度仅能维持在50%左右,而当热循环次数达到80次以后,界面剪切强度仅能维持在20%左右。经扫描电镜研究表明,可能主要是由于上浆剂和树脂基体的降解以及纤维与树脂的热膨胀系数不匹配,导致界面处发生破坏,力学性能下降。     

纳米SiO2/玄武岩纤维增强环氧树脂复合材料的制备和耐久性能研究

首先,利用上浆法,将改性纳米SiO_2与玄武岩纤维复合;然后利用手工铺料法,制备了纳米SiO_2/玄武岩纤维增强环氧树脂层状复合材料(S-BF/EP)。利用SEM对改性玄武岩纤维和玄武岩纤维/环氧树脂层状复合材料的表面形貌和界面形貌进行了研究;利用FT-IR、TGA和万能力学试验机对复合材料的分子结构、热解性能和耐久性能进行了研究。结果表明,纳米SiO_2成功被偶联剂改性,并均匀附着在玄武岩纤维表面,玄武岩纤维表面的粗糙度被有效地改善;S-BF/EP层状复合材料内纳米SiO_2对应的Si-O-Si键收缩振动,使得S-BF/EP层状复合材料比空白EP样品多出1 107和803 cm~(-1)两个振动峰;S-BF/EP层状复合材料降解温度比EP材料高10℃,其在建筑材料应用方面更有优势;S-BF/EP层状复合材料的抗拉强度和抗弯强度分别为489和987 MPa,均高于环氧树脂材料样品的368和795 MPa;经过95℃湿热老化后,S-BF/EP层状复合材料抗拉强度和抗弯强度性能损失分别为23.9%和9.6%,明显低于空白EP样品的32.9%和36.6%;断裂面SEM分析表明,S-BF/EP层状复合材料中纤维与环氧树脂基体结合紧密,未发现裂纹或者缝隙。     

纳米铜/石蜡复合相变蓄热材料的导热性能研究

采用HotDisk热分析仪测试了Cu/石蜡体系在不同纳米颗粒质量分数、温度和热循环次数下的导热系数。研究表明,Cu/石蜡体系的固、液态导热系数随纳米Cu颗粒含量的增加呈非线性增加;温度变化对相变材料导热系数的影响并不明显,但当温度升高至相变温度区间时,相变材料的导热系数急剧增加;复合材料在经历100次热循环后,材料的导热系数值仍较稳定。     

纳米SiO_2包覆提高填充方钴矿热电材料热稳定性

采用熔融结合放电等离子体烧结制备了单相Ba0.3In0.2Ni0.05Co3.95Sb12块体材料,并用湿化学包覆处理方法制备了纳米SiO2包覆的Ba0.3In0.2Ni0.05Co3.95Sb12/SiO2纳米复合材料,重点研究了两种(Ba,In)双原子填充方钴矿基块体材料在300~723~300K范围热循环2000次过程中其显微结构、化学成分和热电性能的演变特征.结果发现,纳米SiO2包覆可以显著提高(Ba,In)双原子填充方钴矿块体材料的热稳定性,单相Ba0.3In0.2Ni0.05Co3.95Sb12块体材料晶界处的显微结构和化学成分发生显著变化,Ba0.3In0.2Ni0.05Co3.95Sb12/SiO2纳米复合材料几乎没有影响,纳米SiO2起着稳定晶界和抑制晶内元素扩散与挥发的作用.热循环过程中,两种材料在300和500K时的综合热电性能ZT值相近,变化很小;800K时,单相块体材料的ZT值呈逐渐降低趋势,纳米复合材料由于受热导率的复杂变化影响其ZT值,随淬火次数增加而逐渐增大,淬火1800次时ZT值达到1.12,甚至高于未淬火的Ba0.3In0.2Co3.95Ni0.05Sb12/SiO2纳米复合材料(1.08)和淬火1800次后的单相Ba0.3In0.2Co3.95Ni0.05Sb12块体材料(1.10)的ZT值.     

气相、沉淀、稻壳SiO2/聚氨酯复合材料的力学性能和吸水性比较

比较了气相、沉淀和稻壳SiO2的物理性质,并利用上述3种SiO2与聚氨酯(PU)复合,考察了SiO2含量(1wt%,3wt%,5wt%)和种类对SiO2/PU复合材料的拉伸性能和吸水性的影响。结果表明:3种SiO2均能够提高SiO2/PU复合材料的力学性质,复合材料的拉伸强度、模量和断裂伸长率均随SiO2含量增加而增加。当SiO2含量相同时,拉伸强度和断裂伸长率的变化顺序为:气相SiO2/PU>沉淀SiO2/PU>稻壳SiO2/PU,拉伸模量的变化顺序为:气相SiO2/PU>稻壳SiO2/PU>沉淀SiO2/PU.对于同一种SiO2/PU复合材料,吸水性随SiO2含量和温度增加而增加,含量相同时,3种SiO2/PU复合材料的吸水性由低到高的顺序是:稻壳SiO2/PU<沉淀SiO2/PU<气相SiO2/PU。     

钛酸钾晶须增强铝基复合材料的热循环尺寸稳定性

用挤压铸造工艺制备了钛酸钾晶须增强铝基复合材料,研究了其热膨胀系数和热循环尺寸稳定性。复合材料的热膨胀系数低于ZL109合金且随晶须含量的增加而降低。50℃~280℃热循环实验中,ZL109合金和复合材料中都观察到应变滞后现象。ZL109合金的热循环曲线具有最大的应变滞后和残余塑性应变,而30 vol%复合材料热循环前后几乎没有尺寸变化,具有很高的尺寸稳定性。最后,我们认为可以用热循环曲线来分析工作在变温环境下的结构材料的尺寸稳定性和失效。     

SiO2含量对新型PA6/EP/SiO2纳米材料体系聚合反应的影响

采用廉价的环氧树脂(EP)与正硅酸乙酯(TEOS)反应生成改性前驱体,然后水解,再将水解液与熔融己内酰胺混匀,通过原位生成法制备出新型PA6/EP/SiO2纳米复合材料。研究了SiO2无机粒子的加入对PA6聚合反应的影响。端基分析和高效液相色谱仪(HPLC)测试结果表明:随SiO2加入量的增加,PA6分子量及低聚物含量有下降趋势。     

纤维素纳米晶改性及其环氧树脂复合材料的制备与性能研究

采用酸水解法从微晶纤维素中提取纤维素纳米晶(CNC),再分别用硅烷偶联剂和2,2,6,6-四甲基哌啶氧化物(TEMPO)氧化剂对纤维素纳米晶进行改性，然后采用浇铸成膜法制备纯环氧树脂膜、含量为5%CNC、偶联改性CNC(K-CNC)及其TEMPO氧化改性CNC(T-CNC)/环氧树脂(EP)复合材料。利用扫描电子显微镜、透射电子显微镜、紫外-可见分光光度计、热重分析仪和万能材料试验机对试样表面薄膜形貌结构、透光性能、热学性能、机械性能进行测试。结果表明：加入T-CNC及其K-CNC的EP复合材料，断面比纯EP膜更加粗糙，裂纹增加。加入CNC及改性后的CNC,EP复合材料的透光率有所降低，T-CNC/EP复合膜的透光率为83.9%,降低幅度最小，K-CNC/EP膜的拉伸强力为38.37MPa,拉伸强力最大，K-CNC/EP膜弹性模量为513.89MPa,和纯EP膜相比，其弹性模量增加了36.8%,T-CNC/EP及K-CNC/EP复合膜的热分解温度分别增加了7℃和10℃,热稳定性得以改善。     

有机硅烷偶联剂对聚丙烯酸酯/纳米SiO_2复合材料性能的影响

同步采用无皂乳液聚合法和溶胶-凝胶法制备了聚丙烯酸酯/纳米SiO2复合材料,通过TEM、力学性能、DSC、TG和XRD等检测手段研究了不同有机硅烷偶联剂对聚丙烯酸酯/纳米SiO2复合材料性能的影响.结果表明,分别采用3-甲基丙烯酸氧丙基三甲氧基硅烷(MEMO)和乙烯基三甲氧基硅烷(VTMO)制备的纳米复合材料,力学性能随其用量的增加而同步增强增韧;TEM结果表明,采用MEMO和VTMO制备的聚丙烯酸酯/纳米SiO2复合材料中的纳米SiO2的粒径约20nm,且分布均匀;热性能结果表明,采用乙烯基三乙氧基硅烷(VTEO)制备的纳米复合材料的玻璃化温度(-8.1℃)和热裂解温度(350℃)最高;XRD结果表明,有机硅烷偶联剂的加入降低了纳米复合材料的结晶度.     

光敏纳米SiO2制备及在光致抗蚀材料中的应用

经溶胶-凝胶法制得纳米SiO2,用不同结构的双键硅烷偶联剂对其表面进行原位接枝改性,得到两种光敏纳米SiO2(M70SiO2和M50SiO2),并将其添加到紫外光固化丙烯酸酯预聚物中,制得杂化光致抗蚀材料。通过测定光敏参数(D0n.5)考察其光敏性知,杂化光致抗蚀材料光敏性明显增加,当光敏纳米SiO2的质量分数增至13.7%～15.8%时,光敏参数达25 mJ/cm2～27 mJ/cm2;用差示扫描量热仪(DSC)及热机械分析(TMA)考察抗蚀材料的热性能,结果显示,随光敏纳米SiO2用量增加Tg升高,热膨胀系数减小,同时分辨率和精密性并未因光敏纳米SiO2的加入而降低。     

Structural and optical properties of AlxOy/Pt/AlxOy multilayer absorber

We report on the microstructure and optical properties of Al_xO_y–Pt–Al_xO_y interference-type multilayer films, deposited by electron beam (e-beam) deposition onto corning 1737 glass, silicon (1 1 1) and copper substrates. The structural properties were investigated by Rutherford backscattering spectrometry, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and atomic force microscopy. The optical properties were extracted from specular reflection/transmission, diffuse reflectance and emissometer measurements. The stratification of the coatings consists of a semi-transparent middle Pt layer sandwiched between two layers of Al_xO_y. The top and bottom Al_xO_y layers were non-stoichiometric with no crystalline phases present. The Pt layer is in the fcc crystalline phase with a broad size distribution and spheroidal shape in and between the rims of Al_xO_y. The surface roughness of the stack was found to be comparable to the inter-particle distance. The optical calculations confirm a high solar absorptance of ∼0.94 and a low thermal emittance of ∼0.06 for the multilayer stack, which is attributed not only to the optimized nature of the multilayer interference stacks, but also to the specific surface morphology and texture of the coatings. These optical characteristics validate the spectral selectivity of the Al_xO_y–Pt–Al_xO_y interference-type multilayer stack for use in high temperature solar-thermal applications.     

Synthesis of a new perovskite Pb(Li14Nb34)O3

A high-pressure technique was adopted to obtain perovskite-type $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$. A new perovskite $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$ was characterized to have a cubic symmetry with $\text{a}{}_{\mathrm{<mtext>o</mtext>}}\text{= 4.069}\text{A}\text{?}$; Li and Nb ions in the B-site of perovskite lattice may be in a random arrangement.     

Bulk crystalline BaPb34Bi14O3: A ceramic superconductor

The preparation conditions of the high T_C ceramic superconductor Ba(Pb,Bi)O₃ is correlated with the superconducting transition. Transition onsets of all materials are similar, but transition widths and transition completeness is strongly dependent on firing temperature. Only materials prepared over a narrow temperature range, resulting in a nearly ideal weight loss, have a complete and narrow transition.     

Optimization of AlxOy/Pt/AlxOy multilayer spectrally selective coatings for solar-thermal applications

Spectrally selective Al_xO_y/Pt/Al_xO_y multilayer absorber coatings were deposited onto corning 1737 glass, Si (111) and copper substrates using electron beam (e-beam) vacuum evaporator at room temperature. The employment of ellipsometric measurements and optical simulation was proposed as an effective method to optimize and deposit multilayer solar absorber coatings. The optical constants (n and k) measured using spectroscopic ellipsometry, showed that both Al_xO_y layers, which used in the coatings, were dielectric in nature and the Pt layer was semi-transparent. The optimized multilayer coatings exhibited high solar absorptance α ∼ 0.94 ± 0.01 and low thermal emittance ? ∼ 0.06 ± 0.01 at 82 °C. The Rutherford backscattering spectroscopy (RBS) data of Al_xO_y/Pt/Al_xO_y multilayer absorber indicated the Al_xO_y layers present in the coating were nearly stoichiometry. The scanning electron microscope analysis (SEM) result indicated that the average diameter and inter-particles distance of Pt grains were statistically about 146 ± 0.17 nm and 6-10 ± 0.2 nm respectively.     

Electrostriction in Pb (Zn13Nb23)O3

The electrostriction in $\text{Pb (Zn}{}_{\mathrm{<mtext>1</mtext><mtext>3</mtext>}}\text{Nb}{}_{\mathrm{<mtext>2</mtext><mtext>3</mtext>}}\text{)}\text{O}{}_3$ crystals has been investigated using a strain gauge method. In the ferroelectric phase below 140 C, the strain vs the electric field shows a hysteresis, which is ascribed to the effect of ferroelectric domains. A quadratic relation holds between the strain x and the electric polarization P as x = QP² above about 170 C in the paraelectric phase. Values of the electrostrictive Q coefficients are determined from the measurements near 190 C, as Q₁₁ = 1.6·10^?2m⁴/C², Q₁₂ = ?0.86·10^?2m⁴/C², and Q₄₄ = 0.85·10^?2m⁴/C².     

Magnetic,electrical and thermal studies on the V1−xMox02

The monoclinic-to-tetragonal structure transition of oxides V_1?xMo_x0₂ with $\text{0≤}\text{x}\text{≤0.20}$ has been studied by means of DTA, X-ray diffraction, magnetic susceptibility (powder samples) and electrical conductivity (single crystals) measurements within the temperature region 80 K to 400 K. A linear decrease of the transition temperature of 11 K per atom % Mo was observed. The magnetic susceptibility of the low temperature phase was found to be temperature independent paramagnetic for all preparations. Electrical conductivity measurements on the same phase showed crystals with $\text{x}\text{? 0.04}$ to be semiconducting, while a metallic behavior was observed in the region $\text{0.10 ?}\text{x}\text{? 0.14}$.     

n-PbTep+−Pb1−xSnxTe heterojunctions prepared by a modified hot wall technique

$\text{n-PbTe}\text{p}{}^{\mathrm{+}}\text{?}\text{Pb}{}_{\mathrm{1?x}}\text{Sn}{}_{\mathrm{x}}\text{Te}$ heterojunctions with a long wavelength spectral cutoff (λ_c ≈ 6 μm) were prepared using the double-channel hot wall technique. The electrical and photoelectrical properties of the heterojunctions at 77, 197 and 300 K were investigated. Detectors with R_oA equal to 170 Ω cm² and a quantum efficiency of 25–40% were obtained. Reasons for the shift of the long wavelength spectral cutoff of the heterojunctions towards shorter wavelengths are given.     

Reactive plasma deposited SixCyHz films

Si_xC_yH_z films have been prepared at 200°C by reactive plasma deposition from SiH₄ and CH₄ diluted in helium in a tubular reactor. These films have a ratio s (equal to $\text{Si}\text{(}\text{Si+C}\text{))}$ ranging from 0.2 to 0.8, a refractive index ranging from 1.96 to 2.6 and an optical energy band gap in the range 2.7-2.2 eV. The total quantity of hydrogen in the film is 40% when s=0.5. Infrared analysis shows that these films have large fractions of homonuclear bonds and that this material is best described as a polymer. Mass spectrometric measurements of the gaseous products formed in the SiH₄-CH₄-He plasma have been performed and the results are related to the composition of the deposited layers.     

Core-current-enhanced domain-wall pinning in nanocrystalline Fe/sub 73.5/Cu/sub 1/Nb/sub 3/Si/sub 15.5/B/sub 7/ ribbon

We have studied the influence of surface fields H/sub p/ (generated by either direct or alternating core current) on soft magnetic properties of amorphous and nanocrystalline Fe/sub 73.5/Cu/sub 1/Nb/sub 3/Si/sub 15.5/B/sub 7/ ribbon. While in an amorphous ribbon the coercive field H/sub c/ decreases with H/sub p/, in the same optimally annealed ribbon (H/sub c/=1.3 A/m, M/sub m//spl ap/M/sub s/) H/sub c/ increases with H/sub p/ for all the explored types of H/sub p/ (static and dynamic with different phases with respect to that of the magnetizing field H). The unexpected increase of H/sub c/ in nanocrystalline ribbon is associated with the influence of H/sub p/ on the surface and main (inner) domain structure. Here, we develop a model that takes into account this influence and explains the experimental results.     

Interfacial microstructure of NiSix/HfO2/SiOx/Si gate stacks

Integration of NiSi_x based fully silicided metal gates with HfO₂ high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi_x film. Ni content varies near the NiSi/HfO_x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi_x/HfO₂ interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi_x/HfO_x was found higher than that of poly-Si/HfO₂, likely due to compositional non-uniformity of NiSi_x. No intermixing between Hf, Ni and Si beyond interfacial roughness was observed.