Electrical Conductivity of Phenoxazine-Iodine (2:3) and Phenothiazine-Iodine (2:3) Crystals

Abstract

Single crystals of phenoxazine-iodine (2 : 3) and phenothiazine-iodine (2 : 3) salts are found to be highly conducting ([sgrave] _R.T. = 5–20 ohm^?1 cm^?1). The observed deviation from the exponential temperature dependence of the conductivities is ascribed to the degenerate semiconducting phases or alternatively to the metallic phases with impurities. However, phenoxazine-iodine and phenothiazine-iodine are perfect semiconductors below 220° K with activation energies of 0.12 eV and 0.14 eV, respectively. The absorption features related with (phenoxazine)⁺ ₂ and (phenothiazine); cations are observed in the infrared spectra of the salts.     

Electronic and Ionic Conductivity in Polyiodine Complexes of Benzophenones and Coumarin

Abstract

Complexes of benzophenone, benzophenone derivatives, or coumarin with alkali or ammonium iodides and iodine have been prepared and their conductivities studied. The organic sub-lattices involve six- or four-coordinate cation clathrated by the carbonyl compounds. The iodine sub-lattices consist of I_n chains in which I₃ ^? and I₅ ^? ions can be identified. AC (1 KHz) conductivities at room temperature vary from 10^?1 to 10^?6 Ω^?1 cm^?1, and are of a mixed ionic and electronic type. The most likely transport mechanism involves hopping processes in the polyiodine sub-lattice.     

Highly Conductive TCNQ Salts of Cu Chelates

Abstract

Cu(II) chelates with ethylenediamine, 2,2′-bipyridine, 1,10-phenanthroline and their analogues form highly conductive TCNQ salts CuL_n(TCNQ)₂. The powder conductivity at room temperature amounts to 7 × 10^?4-1.9 Ω_?1cm^?1, depending on the coordinating ligands. The ESR and magnetic susceptibility studies indicate that the Cu atoms of the complexes have incomplete oxidation states.     

Triplet Excitions in Crystalline Trans-Stilbene I. Spectroscopy of the So → T1 Transition

Abstract

The first singlet → triplet absorption of trans-stilbene has been studied between 10 and 300 K. The triplet exciton energy (energy of the lowest 0–0 line) is 17380 cm^?1 at 10 K, and does not change significantly with temperature. Vibrational A_g modes of 206. 1250 and 1570 cm^?1 are active. The Franck-Condon factor of the origin region is small. The low temperature spectra of the 0–0 and 206 cm^?1 regions show a doublet structure with a splitting of 82 ± 1 cm^?1 which is attributed to the site splitting. Further structure shown by the lines is discussed. The lines are approximately lorentzian. From curve fitting, line-widths and exciton-phonon coupling constants, increasing linearly with T, are deduced. Exciton-phonon coupling appears to be different on the two sites. The product of absorption coefficient at 4880 Å, α, by the total triplettriplet interaction rate constant has been measured at 295 K: αγ=2.3 ± 0.3. 10^?15 cm² sec^?1, corresponding for γ_total to a value of a few 10^?12 cm³ sec^?1.     

Conductivity and Optical Properties of a Polyiodine Canal Complex (Benzophenone)9(KI)2I7, CHCl3

Abstract

(Benzophenone)₉(KI)₂I₇, CHCl₃ single crystals have a golden metallic reflection on the surfaces parallel to the polyiodine chain axis. The compound is a member of a large class of channel-like inclusion compounds in which isolated iodine atom chains are the only possible conducting strands in an otherwise insulating matrix. The (contactless) microwave conductivity is ～ 10 Ω^?1 cm^?1 at room temperature with an activation energy of ～0.03 eV down to 70°K, while the dc conductivity is ～10^?-⁶. Conductivity is strongly frequency dependent and contact problems are severe.     

Measurement of Singlet Exciton Diffusion Coefficient in the C′-Direction in Crystalline Naphthalene

Abstract

The diffusion coefficient of singlet excitons in the c¹ direction in crystalline naphthalene has been deduced from the temporal analysis of fluorescence quenching at the surface by an Al layer, D_C ¹ = 5 × 10^?5 cm² s^?l, corresponding to a diffusion length A_C ¹ = 230 Å.     

The effects of oxygen,hydrogen and fluorine on the conductivity of high purity evaporated amorphous silicon films

Electron bombardment evaporation was used to deposit amorphous silicon (α-Si) films in an evaporator with a base pressure of 2 × 10^?10 Torr. Rutherford backscattering analysis was used to establish the conditions necessary for deposition of pure films.The DC conductivity was measured as a function of temperature (? 150°C to + 140°C). Pure films, which were deposited between room temperature and 400°C, were found to have a room temperature conductivity (σ_RT) in the region of 10^?3μ^?1cm^?1 and a log $\text{σα}\text{T}{}^{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}$ dependence. The value of σ_RT could be reduced by annealing reaching a minimum of 2 × 10^?7μ^?1 cm^?1 for an anneal temperature (T_A) of 520°C, but activated conduction was not observed.The implantation of hydrogen or fluorine (or contamination with oxygen) had the effect of reducing σ_RT, with a minimum value of less than 10^?8μ^?1cm^?1 (T_A = 400°C) for fluorine implantation to a dose of ≈ 10¹⁶ cm² (≈ 0.4 at% concentration). These films had high temperature (50°C) activation energies typical of activated conduction in extended states on the edge of the mobility gap. Implantation of fluorine to a dose of 1.5 × 10¹⁷ resulted in a rise of σ_RT (T_A = 400°C) to nearly 10⁴μ^?1 cm^?1 and log $\text{σα}\text{T}{}^{\mathrm{<mtext>?1</mtext><mtext>4</mtext>}}$ behaviour.X-ray analysis revealed that some crystallization occurred in films annealed at 600°C. This is correlated with a rise in σ_RT of the pure films and the disappearance of the effects of the introduced impurities.     

In Situ Raman and Epr Investigations of A Cis-(Ch)X Electrode

Abstract

In situ Raman and EPR experiments have been performed on a cis-(CH)_x electrode in an electrochemical cell {(CH)_x/1M L1C10₄ in THF/Li}. After a n-type doping with Li, the Raman spectra exhibit new features at = 1600 cm^?1 and 1270 cm^?1, comparable to those obtained with [CH)_X films Li doped via a chemical treatment. The evolution of the EPR signal is followed in a doping-dedoping cycle, showing both the reversibility of the process as well as the evidence for a metallic behavior at the maximum doping concentration.     

The field effect in amorphous chalcogenides: An investigation of localized states and electronic transport

The temperature dependence of the field effect response permits an unambiguous determination of the identity of those states responsible for electrostatic screening in the amorphous chalcogenides. We observe (1) in As₂Te₃, field effect screening by localized states at the Fermi level at low temperatures (～ 10¹⁹ cm^?3 eV^?1) and by mobile charge carriers (～ 10¹⁸ cm^?3 at 300 K) at high temperatures, and a transition from p-type to two-carrier (primarily n-type) conductivity as the temperature is raised above ～320 K; (2) in As₂SeTe₂, screening by mobile charge carriers (～ 10¹⁸ cm^?3 at 300 K) with strongly type conductivity; (3) in As₂Se₂Te, screening by localized states at the Fermi level (～ 10¹⁹ cm^?3 eV^?1) with strongly p-type conductivity; and (4) in Sb₂Te₃, a very high density of localized states at the Fermi level (～ 2 × 10²⁰ cm^?3 eV^?1) with both electron and hole contributions to the conductivity. Correlation with thermoelectric power results suggests that the p-type conductivity in As₂Te₃ is due to near-equal contributions from two processes: hopping in localized states plus extended state conduction. Aging and annealing behavior is described with the aid of a “chaotic potential model” that appears to be able to account for large changes in mobile carrier density that leave the conductivity unaltered.     

Infrared spectra of glassy Se containing small amounts of S,Te, As,or Ge

The infrared transmission spectra of glassy Se containing 2.5 and 5.0 at % S, Te, As or Ge as well as pure Se were measured in the wavenumber region 400-60 cm^?1 at room temperature. Besides the absorption bands reported already for pure Se, well-defined bands were founds at 355 cm^?1 and 168 cm^?1 for the addition of S, and at 205 cm^?1 for Te. These new absorption bands attributed to Se₃S₅ and Se₅Te₃ mixed rings, respectively. For As, a strong absorption band appeared at 240 cm^?1. The band near 135 cm^?1 began to broaden and shift to lower frequency with As content. Two shoulder bands near 307 cm^?1 and 278 cm^?1 and a separated band at 195 cm^?1 were found for Ge. With increasing Ge concentration the band at 135 cm^?1 broadened and shifted to lower frequency. An interpretation for the new bands is presented on the basis of a molecular model.     

Raman Investigation of Alkali-Doped (Ch)x films

Abstract

Resonance Raman spectra induced by (CH)_x films chemically or electrochemically doped with alkali metals are reported. At low doping levels, Raman bands characteristic of the trans isomer are observed. The Raman spectra can be well fitted using the theory developped by Mulazzi based on a bimo-dal distribution of long and short trans segments respectively. At the same time, typical results obtained for a cis-rich (CH)_x sample, as well as its behavior during a thermal isomerization, are recalled in the frame of the Mulazzi model. When the polymer is highly doped with Li (or Na) atoms, new features at ? 1600 cm^?1 and 1270 cm^?1 appear and could be an indication that n-doped films are less disordered than p-doped systems.     

Electrochemical characterizations and the effect of glycerol in biopolymer electrolytes based on methylcellulose-potato starch blend

ABSTRACT

Polymer electrolytes have been prepared by blending methylcellulose (MC)-potato starch, doped with lithium perchlorate (LiClO₄) and plasticized with glycerol. The blend of 60 wt% MC-40 wt% starch was found to be the most suitable ratio to serve as polymer host. Fourier transform infrared (FTIR) spectroscopy analysis proved the interaction among the components. X-ray diffraction (XRD) analysis indicated that the conductivity enhancement is due to the increase in amorphous content. The highest ionic conductivity obtained at room temperature was (4.25 ± 0.82) × 10^?4 S cm^?1 for MC-starch-LiClO₄-20 wt% glycerol. The highest conducting samples in both systems were found to obey Arrhenius rule. Dielectric study further strengthens the conductivity result.     

Raman Scattering From TMTSF-Salts

Abstract

Experimental results for Raman scattering from TSeF, TMTSF-D12, (TMTSF)₂PF₆ and (TMTSF)₂AsF₆ excited with blue-green laser light at liquid nitrogen temperature are reported. A strong resonance effect for excitation of TMTSF with 4579 Å was observed and an assignment for the a_g modes was obtained by comparison with results from TTF. Methyl group modes were identified at 328 cm^?1, 472 cm^?1 and 916 cm^?1, respectively. Charging the TMTSF molecule resulted in a strong frequency shift of -122 cm^?1 and -76 cm^?1 for the a_gu₂ mode, respectively. A study of the temperature dependence of the scattering from molecular modes between 2 K and 300 K did not reveal any correlation with the phase transitions in the conducting compounds.     

Spectres de vibration du Cristal de Biphényle à Basse Température

Abstract

Low-temperature infrared and Raman spectra of Crystalline biphenyl have been investigated in the 3100–25 cm^?1 range, and those of biphenyl-D₁₀ between 200 and 25 cm^?1. The infrared dichroism of an Oriented crystal at 77°K has been measured in the 3100–400 cm^?1 region. The assignment for the internal modes V ₅(B_2u), v ₆ (B_2u), v ₁(B_1u), v ₁₀(B_1g), v ₂(B_2g) et v ₃ (B_3g) is given.

The band splitting is analized and hte components due ot the correlation effect in the fundamentals are separated from the components due to combinations. Isotopic shifts are used to assign the nine external vibrations as well as the torsional mode. The temperature effect on the frequencies occuring below 500 cm^?1 is discussed.     

“Polyaniline”: Interconversion of Metallic and Insulating Forms

Abstract

“Polyaniline” has been synthesized in various forms both chemically and electrochemically in aqueous media. The qulnoid-benzenoid-diimine form, an insulator, is doped by dilute aqueous protonic acids to the metallic regime ([sgrave] = 5 ohm^?1cm^?1; compressed pellet) to give the corresponding iminium salt. This represents a new type of p-doping phenomenon in a conducting polymer. Both these forms are stable in the presence of air and/or water. The doping process is reversed by treatment with aqueous alkali. Cyclic voltammetry studies in an aqueous electrolyte show excellent reversibility between selected reduced and oxidized forms of polyaniline.     

Ionic conductivity of Li2OB2O3 thin films

The ionic conductivity of evaporated Li₂OB₂O₃ thin films has been studied. These thin films were found to show a considerably high ionic conductivity of 1 × 10^?7 Ω^?1 cm^?1 at room temperature. The conductivity increases with increasing Li content and exhibits a maximum value near 3Li₂O·B₂O₃. The structure of these films was determined using infrared absorption and laser Raman scattering spectroscopy. Using the results, the correlation between structure and conductivity is also discussed.     

Crystal Structure of a Non-Conductive Non-Stoichiometric Tetrathiafulvalenium Salt: (TTF)3(BF4)2

Abstract

(TTF)₃(BF₄)₂ crystallizes in the triclinic system, space group P1, a = 8.017(3), b = 8.601(1), c = 11.635(2) Å, α = 108.79(1), β = 100.96(2), γ = 99.09(2)°, Z = 1. The TTF entities are stacked in parallel columns arranged into parallel layers alternating with layers of BF₄ ^? anions. A TTF stack is constituted of (TTF⁺)₂ diads interspersed with TTF° monads; the TTF⁺-TTF⁺ overlap is of the ring-over-ring type while the TTF⁺-TTF⁺ overlap is of the bond-over-ring type. These features explain the low conductivity ([sgrave]_powdcr = 2 × 10^?5 Ω^?l cm^?1) of this apparently non-stoichiometric TTF salt.     

Device quality epitaxial gallium arsenide grown by the metal alkyl-hydride technique

Good vapour-phase epitaxial gallium arsenide on gallium arsenide can readily be obtained using trimethylgallium and arsine. The system is rapid and economical to use. Undoped material can be n or p-type with a carrier concentration of less than 5 × 10¹⁵ cm^?3. The best n-type material had a room temperature mobility of 6260 cm² sec^?1 V^?1, and for the best p-type material it was 385 cm² sec^?1V^?1. Material can be controllably doped n-type with sulphur. Multiple sub-micron n⁺ and n on p layers have been grown and used to fabricate Schottky barrier field effect transistors (FET). Material with good photocathode properties was grown by doping strongly p-type with dimethyl zinc.     

Structural and Electrical Characterization of Ag3Ga5Te9 and Ag3In5Se9 Crystals

X-ray powder diffraction studies revealed that Ag₃Ga₅Te₉ and Ag₃In₅Se₉ crystallize in orthorhombic and tetragonal systems, respectively. The temperature dependent conductivity and Hall effect measurements have been carried out between 65—480 K. Ag₃Ga₅Te₉ exhibits p-type conduction with a room temperature conductivity of 4.3 × 10^—4 (Ω · cm)^—1 and mobility less than 1 cm²/V · s. Ag₃In₅Se₉ was identified to be n-type with room temperature conductivity 7.2 × 10^—5 (Ω · cm)^—1 and mobility 20 cm²/V · s. From temperature dependence of the conductivity three different impurity ionization energies were obtained for both compounds. The anomalous behavior observed in the temperature dependence of mobility was attributed to the different features of the microstructure.     

Photoelectric features of vacuum-deposited a-Si:H/Alq3 blends

Using three electrode vacuum system for glow discharge of 5% SiH₄ + 95% Ar gas mixture together with thermal evaporation of phosphorus or boric aced, the n- and p-type a-Si:H layers have been deposited. By co-evaporation of phosphorus or boric aced the conductivity of a-Si:H layers was changed in 10^?11–10^?3 Ω^?1 cm^?1 or 10^?11 –10^?8 Ω^?1 cm^?1 range, respectively. Blends of a-Si:H and tris-(8-hydroxyquinoline) aluminum (Alq₃) have been vacuum-deposited by simultaneous glow discharge of 5% SiH₄ + 95 % Ar gas mixture and thermal co-evaporation of Alq₃. Photoluminescence spectrum of a-Si:H/Alq₃ blend coincident with one of Alq₃ was observed at room temperature.