Life cycle assessment of thin‐film GaAs and GaInP/GaAs solar modules

This paper presents an environmental comparison based on life cycle assessment (LCA) of the production under average European circumstances and use in The Netherlands of modules based on two kinds of III–V solar cells in an early development stage: a thin‐film gallium arsenide (GaAs) cell and a thin‐film gallium‐indium phosphide/gallium arsenide (GaInP/GaAs) tandem cell. A more general comparison of these modules with the common multicrystalline silicon (multi‐Si) module is also included. The evaluation of the both III–V systems is made for a limited industrial production scale of 0·1 MW_p per year, compared to a scale of about 10 MW_p per year for the multi‐Si system. The here considered III–V cells allow for reuse of the GaAs wafers that are required for their production. The LCA indicates that the overall environmental impact of the production of the III–V modules is larger than the impact of the common multi‐Si module production; per category their scores have the same order of magnitude. For the III–V systems the metal‐organic vapour phase epitaxy (MOVPE) process is the main contributor to the primary energy consumption. The energy payback times of the thin‐film GaAs and GaInP/GaAs modules are 5·0 and 4·6 years, respectively. For the multi‐Si module an energy payback time of 4·2 years is found. The results for the III–V modules have an uncertainty up to approximately 40%. The highly comparable results for the III–V systems and the multi‐Si system indicate that from an environmental point of view there is a case for further development of both III–V systems. Copyright © 2006 John Wiley & Sons, Ltd.     

InGaP//GaAs//c‐Si 3‐junction solar cells employing spectrum‐splitting system

In this work, we practically demonstrated spectrum‐splitting approach for advances in efficiency of photovoltaic cells. Firstly, a‐Si:H//c‐Si 2‐junction configuration was designed, which exhibited 24.4% efficiency with the spectrum splitting at 620 nm. Then, we improved the top cell property by employing InGaP cells instead of the a‐Si:H, resulting in an achievement of efficiency about 28.8%. In addition, we constructed 3‐junction spectrum‐splitting system with two optical splitters, and GaAs solar cells as middle cell. This InGaP//GaAs//c‐Si architecture was found to deliver 30.9% conversion efficiency. Our splitting system includes convex lenses for light concentration about 10 suns, which provided concentrated efficiency exceeding 33.0%. These results suggest that our demonstration of 3‐junction spectrum‐splitting approach can be a promising candidate for highly efficient photovoltaic technologies. Copyright © 2016 John Wiley & Sons, Ltd.     

17.9% Metal‐wrap‐through mc‐Si cells resulting in module efficiency of 17.0%

We obtained 17.9% cell efficiency on thin and large mc‐Si REC wafers using ECN's metal‐wrap‐through (MWT) concept. Optimization of several cell processing steps led to an increase of more than 2% absolute in cell efficiency. With these cells 36‐cell modules were manufactured at 100% yield in our industry scale module pilot line. The highest module efficiency obtained (as independently confirmed by JRC‐ESTI) was 17%. In this module the average cell efficiency was 17.8%; this shows a small difference between cell and module efficiency. Copyright © 2011 John Wiley & Sons, Ltd.     

Life‐cycle greenhouse gas effects of introducing nano‐crystalline materials in thin‐film silicon solar cells

Solar PV is widely considered as a “green” technology. This paper, however, investigates the environmental impact of the production of solar modules made from thin‐film silicon. We focus on novel applications of nano‐crystalline Silicon materials (nc‐Si) into current amorphous Silicon (a‐Si) devices. Two nc‐Si specific details concerning the environmental performance can be identified, when we want to compare to a‐Si modules. First, in how far the extra (and thicker) silicon layer (s) affects upstream material requirements and energy use. Second, in how far depositing an extra silicon layer may increase emissions of greenhouse gases as additional emissions of Fluor gases (F‐gases) are associated to this step. The much larger global warming potential of F‐gases (17 200–22 800 times that of CO₂) may lead to higher environmental burdens. To date, no study has yet analyzed the effect of F‐gas usage on the environmental profile of thin‐film silicon solar modules. We performed a life‐cycle assessment (LCA) to investigate the current environmental usefulness of pursuing this novel micromorph concept. The switch to the new micromorph technology will result in a 60–85% increase in greenhouse gas emissions (per generated kWh solar electricity) in case of NF₃ based clean processing, and 15–100% when SF₆ is used. We conclude that F‐gas usage has a substantial environmental impact on both module types, in particular the micromorph one. Also, micromorph module efficiencies need to be improved from the current 8–9% (stabilized efficiency) toward 12–16% (stab. eff.) in order to compensate for the increased environmental impacts. Copyright © 2010 John Wiley & Sons, Ltd.     

Economic competitiveness of III–V on silicon tandem one‐sun photovoltaic solar modules in favorable future scenarios

Tandem modules combining a III–V top cell with a Si bottom cell offer the potential to increase the solar energy conversion efficiency of one‐sun photovoltaic modules beyond 25%, while fully utilizing the global investment that has been made in Si photovoltaics manufacturing. At present, the cost of III–V cells is far too high for this approach to be competitive for one‐sun terrestrial power applications. We investigated the system‐level economic benefits of both GaAs/Si and InGaP/Si tandem modules in favorable future scenarios where the cost of III–V cells is substantially reduced, perhaps to less than the cost of Si cells. We found, somewhat unexpectedly, that these tandems can reduce installed system cost only when the area‐related balance‐of‐system cost is high, such as for area‐constrained residential rooftop systems in the USA. When area‐related balance‐of‐system cost is lower, such as for utility‐scale systems, the tandem module offers no benefit. This is because a system using tandem modules is more expensive than one using single‐junction Si modules when III–V cells are expensive, and a system using tandem modules is more expensive than one using single‐junction III–V modules when III–V cells are inexpensive. Copyright © 2016 John Wiley & Sons, Ltd.     

Comparative life‐cycle energy payback analysis of multi‐junction a‐SiGe and nanocrystalline/a‐Si modules

Despite the publicity of nanotechnologies in high tech industries including the photovoltaic sector, their life‐cycle energy use and related environmental impacts are understood only to a limited degree as their production is mostly immature. We investigated the life‐cycle energy implications of amorphous silicon (a‐Si) PV designs using a nanocrystalline silicon (nc‐Si) bottom layer in the context of a comparative, prospective life‐cycle analysis framework. Three R&D options using nc‐Si bottom layer were evaluated and compared to the current triple‐junction a‐Si design, i.e., a‐Si/a‐SiGe/a‐SiGe. The life‐cycle energy demand to deposit nc‐Si was estimated from parametric analyses of film thickness, deposition rate, precursor gas usage, and power for generating gas plasma. We found that extended deposition time and increased gas usages associated to the relatively high thickness of nc‐Si lead to a larger primary energy demand for the nc‐Si bottom layer designs, than the current triple‐junction a‐Si. Assuming an 8% conversion efficiency, the energy payback time of those R&D designs will be 0.7–0.9 years, close to that of currently commercial triple‐junction a‐Si design, 0.8 years. Future scenario analyses show that if nc‐Si film is deposited at a higher rate (i.e., 2–3 nm/s), and at the same time the conversion efficiency reaches 10%, the energy‐payback time could drop by 30%. Copyright © 2010 John Wiley & Sons, Ltd.     

InGaP/GaAs‐based multijunction solar cells

The conversion efficiency of InGaP/(In)GaAs/Ge ‐based multijunction solar cells has been improved up to 29–30% (AM0) and 31–32% (AM1·5G) by technologies, such as double‐hetero wide band‐gap tunnel junctions, combination with Ge bottom cell with the InGaP first hetero‐growth layer, and precise lattice‐matching to Ge substrate by adding 1% indium to the conventional GaAs lattice‐match structure. Employing a 1·95 eV AlInGaP top cell should improve efficiency further. For space use, radiation resistance has been improved by technologies such as introducing of an electric field in the base layer of the lowest‐resistance middle cell, and EOL current matching of sub‐cells to the highest‐resistance top cell. A grid structure and cell size have been designed for concentrator applications in order to reduce the energy loss due to series resistance, and 38% (AM1·5G, 100–500 suns) efficiency has been demonstrated. Furthermore, thin‐film structure which is InGaP/GaAs dual junction cell on metal film has been newly developed. The thin‐film cell demonstrated high flexibility, lightweight, high efficiency of over 25% (AM0) and high radiation resistance. Copyright © 2005 John Wiley & Sons, Ltd.     

GaAs solar cells grown on Si substrates for space use

GaAs single‐junction and InGaP/GaAs multi‐junction thin‐film solar cells fabricated on Si substrates have great potential for high‐efficiency, low‐cost, lightweight and large‐area space solar cells. Heteroepitaxy of GaAs thin films on Si substrates has been examined and high‐efficiency GaAs thin‐film solar cells with total‐area efficiencies of 18·3% at AM0 and 20·0% at AM 1·5 on Si substrates (GaAs‐on‐Si solar cells) have been fabricated. In addition, 1‐MeV electron irradiation damage to GaAs‐on‐Si cells has been studied. The GaAs‐on‐Si cells are found to show higher end‐of‐life efficiency than the conventional GaAs cells fabricated on GaAs substrates (GaAs‐ on‐GaAs cells) under high‐fluence 1‐MeV electron irradiation of more than 1 × 10¹⁵ cm⁻². The first space flight to make use of them has been carried out. Forty‐eight 2 × 2 cm GaAs‐on‐Si cells with an average AM0 total‐area efficiency of 16·9% have been evaluated in the Engineering Test Satellite No.6 (ETS‐VI). The GaAs‐on‐Si cells have been demonstrated to be more radiation‐resistant in space than GaAs‐on‐GaAs cells and 50, 100 and 200‐μm‐thick Si cells. These results show that the GaAs‐on‐Si single‐junction and InGaP/GaAs‐on‐Si multi‐junction cells have great potential for space applications. Copyright © 2001 John Wiley & Sons, Ltd.     

H2 plasma treatment at the p/i interface of a hydrogenated amorphous Si absorption layer for high‐performance Si thin film solar cells

Plasma treatment (PT) of the buffer layer for highly H₂‐diluted hydrogenated amorphous silicon (a‐Si:H) absorption layers is proposed as a technique to improve efficiency and mitigate light‐induced degradation (LID) in a‐Si:H thin film solar modules. The method was verified for a‐Si:H single‐junction and a‐Si:H/microcrystalline silicon (µc‐Si:H) tandem modules with a size of 200 × 200 mm² (aperture area of 382.5 cm²) under long‐term light exposure. H₂ PT at the p/i interface was found to eliminate non‐radiative recombination centers in the buffer layer, and plasma‐enhanced chemical vapor deposition at low radio‐frequency power was found to suppress the generation of defects during the growth of a‐Si:H absorption layers on the treated buffer layers. With optimized H₂ PT of the a‐Si:H single‐junction module, the stabilized short circuit current and fill factor increased, and the stabilized open circuit voltage moves beyond its initial value. The results demonstrate 7.7% stabilized efficiency and 10.5% LID for the a‐Si:H single‐junction module and 10.82% stabilized efficiency and 7.76% LID for the a‐Si:H/µc‐Si:H tandem module. Thus, the growth of an a‐Si:H absorption layer on a H₂ PT buffer layer can be considered as a practical method for producing high‐performance Si thin film modules. Copyright © 2012 John Wiley & Sons, Ltd.     

The potential of III‐V semiconductors as terrestrial photovoltaic devices

III‐V semiconductors, GaAs and in particular InGaP, are used in many different electronic applications, such as high power and high frequency devices, laser diodes and high brightness LED. Their direct bandgap and high reliability make them ideal candidates for the realisation of high efficiency solar cells: in the past years they have been successfully used as power sources for satellites in space, where they are able to produce electricity from sunlight with an overall efficiency of around 30%. Nowadays, the use of arsenides and phosphides as photovoltaic (PV) devices is confined only to space applications since their price is much higher than conventional Si flat panel modules, the leading PV market technology. But with the introduction of multijunction solar cells capable of operating in high concentration solar light, the area and, therefore, the cost of these cells can be reduced and will eventually find an application and market also on Earth. This article will review the situation of semiconductor solar cell materials, focusing on Si, GaAs, InGaP and multijunction solar cells and will discuss future trends and possibilities of bringing III‐V technology from space to Earth. Copyright © 2006 John Wiley & Sons, Ltd.     

Record 12.34% stabilized conversion efficiency in a large area thin‐film silicon tandem (MICROMORPH™) module

Mass‐adoption of thin‐film silicon (TF‐Si) photovoltaic modules as a renewable energy source can be viable if the cost of electricity production from the module is competitive with conventional energy solutions. Increased module performance (electrical power generated) is an approach to reduce this cost. Progress towards higher conversion efficiencies for ‘champion’ large area modules paves the way for mass‐production module performance to follow. At TEL Solar AG, Trübbach, Switzerland, significant progress in the absolute stabilized module conversion efficiency has been achieved through optimized solar cell design that integrates high‐quality amorphous and microcrystalline TF‐Si‐deposited materials with efficient light management and transparent conductive oxide layers in a tandem MICROMORPH™ module. This letter reports a world record large area (1.43 m²) stabilized module conversion efficiency of 12.34% certified by the European Solar Test Installation; an increase of more than 1.4% absolute compared with the previous record for a TF‐Si triple junction large area module. This breakthrough result generates more than 13.2% stabilized efficiency from each equivalent 1 cm² of the active area of the full module. Copyright © 2015 John Wiley & Sons, Ltd.     

Ex‐ante environmental and economic evaluation of polymer photovoltaics

The use of polymer materials for photovoltaic applications is expected to have several advantages over current crystalline silicon technology. In this paper, we perform an environmental and economic assessment of polymer‐based thin film modules with a glass substrate and modules with a flexible substrate and we compare our results with literature data for multicrystalline (mc‐) silicon photovoltaics and other types of PV. The functional unit of this study is ‘25 years of electricity production by PV systems with a power of 1 watt‐peak (W_p)’. Because the lifetime of polymer photovoltaics is at present much lower than of mc‐silicon photovoltaics, we first compared the PV cells per watt‐peak and next determined the minimum required lifetime of polymer PV to arrive at the same environmental impacts as mc‐silicon PV. We found that per watt‐peak of output power, the environmental impacts compared to mc‐silicon are 20–60% lower for polymer PV systems with glass substrate and 80–95% lower for polymer PV with PET as substrate (flexible modules). Also in comparison with thin film CuInSe and thin film silicon, the impacts of polymer modules, per watt‐peak, appeared to be lower. The costs per watt‐peak of polymer PV modules with glass substrate are approximately 20% higher compared to mc‐silicon photovoltaics. However, taking into account uncertainties, this might be an overestimation. For flexible modules, no cost data were available. If the efficiency and lifetime of polymer PV modules increases, both glass‐based and flexible polymer PV could become an environment friendly and cheap alternative to mc‐silicon PV. Copyright © 2009 John Wiley & Sons, Ltd.     

Change in I–V characteristics of thin‐film photovoltaic (PV) modules induced by light soaking and thermal annealing effects

The performance of photovoltaic (PV) modules is generally rated under standard test conditions (STC). However, the performance of thin‐film photovoltaic modules is not unique even under STC, because of the “metastability”. The effects of the light soaking and thermal annealing shall be incorporated into an appropriate energy rating standard. In this study, the change in I–V characteristics of thin‐film PV modules caused by the metastability was examined by repeated indoor measurements in addition to round‐robin outdoor measurements. The investigated thin‐film modules were copper indium gallium (di)selenide (CIGS), a‐Si : H, and a‐Si : H/µc‐Si : H (tandem) modules. The increase in the performance of the CIGS module between the initial and final indoor measurements was approximately 8%. Because of light‐induced degradation, the indoor performance of the a‐Si : H and a‐Si : H/µc‐Si : H modules decreased by approximately 35% and 20%, respectively. The performance was improved by about 4–6% under high temperature conditions after the initial degradation. The results suggest that the performance of thin‐film silicon modules can seasonally vary by approximately 4–6% only due to thermal annealing and light soaking effects. The effect of solar spectrum enhanced the outdoor performance of the a‐Si : H module by about 10% under low air mass conditions, although that of the a‐Si : H/µc‐Si : H modules showed a little increase. The currents of these a‐Si : H/µc‐Si : H modules may be limited by the bottom cells. Therefore, it is required to optimize the effect of solar spectrum in addition to the effects of light soaking and thermal annealing, in order to achieve the best performance for thin‐film silicon tandem modules. Copyright © 2013 John Wiley & Sons, Ltd.     

A thin‐film silicon solar cell and module

We have developed a new light‐trapping scheme for a thin‐film Si stacked module (Si HYBRID PULS module), where a (a‐Si:H/transparent interlayer/microcrystalline Si) thin‐film was integrated into a large‐area solar cell module. An initial aperture efficiency of 13·1% has been achieved for a 910 × 455 mm Si HYBRID PLUS module, which was independently confirmed by AIST. This is the first report of the independently confirmed efficiency of a large‐area thin‐film Si module with an interlayer. The 19% increase of short‐circuit current of this module was obtained by the introduction of a transparent interlayer that caused internal light‐trapping. A mini‐module was shown to exhibit a stabilized efficiency of 12%. Outdoor performance of a Si HYBRID (a‐Si:H / micro‐crystalline Si stacked) solar cell module has been investigated for over 4 years with two different kinds of module (top and bottom cell limited, respectively). The HYBRID modules limited by the top cell have exhibited a more efficient performance than the modules limited by the bottom cell, in natural sunlight at noon. Copyright © 2005 John Wiley & Sons, Ltd.     

Activity and current status of R&D on space solar cells in Japan

Japan's Research and Development (R&D) activities on high‐performance III–V compound space solar cells are presented. Studies of new CuInGaSe₂ thin‐film terrestrial solar cells for space applications are also discussed. Performance and radiation characteristics of a newly developed InGaP/GaAs/Ge triple‐junction space solar cell, including radiation response, results of a flight demonstration test of InGaP/GaAs dual‐junction solar cells and CuInGaSe₂ thin‐film solar cells, and radiation response of three component sub‐cells are explained. This study confirms superior radiation tolerance of InGaP/GaAs dual‐junction cells and CuInGaSe₂ thin‐film cells by space flight experiments. Copyright © 2005 John Wiley & Sons, Ltd.     

Seasonal variations on energy yield of a‐Si,hybrid, and crystalline Si PV modules

This paper presents a study of long‐term outdoor performance of a‐Si and hybrid modules mounted in the same location over several years. The modules were also characterized indoors using standard measurement methods employing pulsed solar simulators at the European Solar Test Installation (ESTI). The present study is intended to contribute to future standards on energy rating by presenting a common procedure for correcting the outdoor performance measurements to standard test conditions and comparing the resulting module performance at real and laboratory conditions. A seasonal variation in output, higher in the summer and lower in the winter, suggests that the module performance improves due to annealing when the module temperature is higher. The total output energy per month for these two technologies and a reference c‐Si technology is also presented. Copyright © 2010 John Wiley & Sons, Ltd.     

Screen‐printed epitaxial silicon thin‐film solar cells with 13·8% efficiency

Amidst the different silicon thin‐film systems, the epitaxial thin‐film solar cell represents an approach with interesting potential. Consisting of a thin active c‐Si layer grown epitaxially on top of a low‐quality c‐Si substrate, it can be implemented into solar cell production lines without major changes in the current industrial process sequences. Within this work, ∼30‐μm‐thick epitaxial layers on non‐textured and highly doped monocrystalline Czochralski (Cz) and multicrystalline (mc) Si substrates have been prepared by CVD. Confirmed efficiencies of 13·8% on Cz and 12·3% on mc‐Si substrates have been achieved by applying an industrial process scheme based on tube and in‐line phosphorus diffusion, as well as screen‐printed front and back contacts fired through a SiN_x anti‐reflection coating. An extensive solar cell characterisation, including infrared lock‐in thermography and spectral response measurements is presented. Copyright © 2003 John Wiley & Sons, Ltd.     

C‐Si solar cell modules

In order to meet the rapidly growing demand for solar power photovoltaic systems which is based on public consciousness of global environmental issues, SHARP has increased the production of solar cells and modules over 10‐fold in the last 5 years. Silicon‐based technologies are expected to be dominant in the coming decade. In the course of an increase of the annual production scale to 1000 MW, the efficiency of modules will be improved and the thickness of wafers will be decreased and all this will lead to a drastic price reduction of PV systems. Copyright © 2005 John Wiley & Sons, Ltd.     

Preconditioning of thin‐film PV module technologies for calibration

Thin‐film module technologies are known for their metastability, and a study of this behaviour for different types of thin‐film modules is presented. The modules investigated through a series of controlled light‐soaking procedures are copper–indium sulfide (CIS), copper–indium–gallium diselenide (CIGS), cadmium telluride (CdTe), triple‐junction amorphous silicon (a‐Si), micromorph silicon (a‐Si/μ‐Si) and thin‐film crystalline silicon (CSG). The objective of the paper is to investigate whether after the stabilization point, as defined in the international qualification standard IEC 61646, there is any further significant change in the maximum power of the module. It was found that all CIS and CIGS modules investigated in this study stabilize according to IEC 61646, and no further significant change in maximum power is observed. The same result was obtained also for the CSG module. To the contrary, CdTe, triple‐junction a‐Si and a‐Si/μ‐Si modules continued to show further change in maximum power even after they stabilize according to IEC 61646. For the purposes of module qualification, given the need to stay ‘within reasonable constraints of cost and time’, the stability procedure of IEC 61646 could be considered as satisfactory. However, in order to perform sufficient preconditioning of thin‐film modules prior to precision calibration, a new more complete standard procedure is needed, tailored to the specific technology. For example, tighter stability limits lower than the current 2%, which would have the effect of increasing the number of light‐soaking periods required. Copyright © 2012 John Wiley & Sons, Ltd.     

InGaP/GaAs HBT器件的制备及其特性

采用在发射区台面腐蚀时保留InGaP钝化层和去除InGaP钝化层的方法制备了两种InGaP/GaAs异质结双极晶体管(HBT)器件,研究了InGaP钝化层对HBT器件基区表面电流复合以及器件直流和射频微波特性的影响.对制备的两种器件进行了对比测试后得到:保留InGaP钝化层的HBT器件最大直流增益(β)为130,最高振荡频率(fmax)大于53 GHz,功率附加效率达到61％,线性功率增益为23 dB;而去除InGaP钝化层的器件最大β为50,fnax大于43 GHz,功率附加效率为57％,线性功率增益为18 dB.测试结果表明,InGaP钝化层作为一种耗尽型的钝化层能有效抑制基区表面电流的复合,提高器件直流增益,改善器件的射频微波特性.