JTIDS的误码率性能分析

介绍了联合战术信息分配系统(JTIDS)战术数据链的信号流程,分析了JTIDS中循环码移位键控(CCSK)扩频、RS纠错编译码和最小频移键控(MSK)调制解调技术,研究了CCSK和RS编码在高斯白噪声环境下的抗干扰性能,建立了JTIDS性能分析模型,并使用MATLAB进行了仿真,仿真结果验证了采用CCSK扩频和RS编码...     

基于VC++的战术数据链通信仿真系统设计与实现

为了实现战术数据链通信仿真系统,在分析与研究联合战术信息分发系统(JTIDS)关键技术的基础上,构建了战术数据链链路层仿真模型。依据仿真模型中各模块的划分,以VC++语言为编程实现平台,采用面向对象的程序设计方法,设计并实现了Reed-Solomon码(RS码)编译码类、循环码移位键控类、最小移频键控类。最后在高斯白噪声信道下对仿真系统进行了验证和性能分析。结果表明,设计的各个类模块功能满足系统指标,基于各个类模块构建的仿真系统符合设计要求,为下一步研究JTIDS系统干扰与抗干扰性能奠定了基础。     

JTIDS传输符号产生模块的FPGA设计

根据公开的关于Link16数据链的信息标准并结合对战术数据链的具体要求,设计 了一种JTIDS传输符号产生模块,该模块包含RS编码、交织、CCSK软扩频、CCSK码字加密等 若干子模块。首先介绍了Link16数据链传输符号的产生原理,对其各个子处理模块进行了设 计并提出了硬件实现方案,然后在Quartus II环境下选择Cyclone II系列的EP2C8Q208C8 FP GA芯片进行了JTIDS传输符号产生模块的系统级综合与仿真,并在该芯片的开发板上进行了 验证,硬件成品可用于JTIDS终端功能测试与评估等多种场合。     

对JTIDS中的CRC码的仿真及分析

JTIDS是当前美军的主要战术数据链系统,由于JTIDS采用的是无线网络通信技术和应用协议,因此,在复杂电磁环境下的信息化战场上会受到各种干扰的影响,使接收端收到的信息比特产生误码。为了提高通信的可靠性,JTIDS在信道编码模块利用CRC12生成多项式对225bit数据进行了CRC编译码。给出了CRC编译码的具体算法,分析了CRC校验码的漏检概率。在simulink仿真平台上对JTIDS的CRC（237,225）编译码过程进行了仿真,根据仿真的结果分析了CRC（237,225）的漏检率,说明CRC码具有检错效率高、易于实现的特点。     

JTIDS数据链报文传输可靠性分析及仿真

联合战术信息分发系统[1](Joint Tactical Information Distribution System,简称JTODS)采用组合调制体制以及多层编码体系保证报文传输的可靠性,本文提出了JTIDS数据链报文传输可靠性的评价模型,分析了该系统在莱斯衰落信道环境和部分频带干扰条件下的符号误码率和报文丢失率,并利用SIMULINK仿真平台对JTIDS数据链报文传输过程进行设计、建模和仿真,并对结果进行分析.仿真结果显示,由于JTIDS系统将RS编码、交织等多种编码技术和DS/FFH MSK调制技术相结合,使其在复杂信道环境下保持较低的符号误码率及报文丢失率,满足数据链报文传输可靠性的要求.     

CRC-RS编码在JTIDS链路中的仿真分析

联合战术信息分发系统JTIDS（Joint Tactical Information Distribution System）是一个大容量、高速度、抗干扰、保密、时分多址的信息分发系统,在未来信息化战争中起到了越来越重要的作用。通信可靠性是充分发挥JTIDS系统作用的重要保证,信道编码可以有效提高系统可靠性。为分析信道编码在JTIDS系统中的作用,从CRC、RS编译码原理出发,研究了信号在JTIDS中传输过程,最后运用Simulink软件设计了JTIDS通信系统链路,并对未编码信号、RS编码信号、CRC-RS编码信号在有噪信道中传输的误码性能进行了仿真测试,结果表明采用CRC-RS编码能有效提高JTIDS通信的可靠性。     

基于Simulink的联合战术信息分发系统仿真

通过研究联合战术信息分发系统（JTIDS）采用的主要技术,利用Simulink仿真软件,实现了对信源的差错控制编码;以32位的循环码移位键控（CCSK）码字S0为基础建立扩频空间,完成软扩频;最后通过VCO模块实现了51个频点的随机跳变,完成了JTIDS数据链路的仿真,并在白噪声信道和干扰环境中分析了该系统的抗干扰性能,为下一步对其进行有效干扰奠定基础。     

基于32BOK调制的JTIDS信号性能分析

联合战术信息分发系统（JTIDS）是一种混合了跳、扩频技术的系统,它对数据包进行RS（31,15）编码和循环码字移位键控（cyclical code-shift keying,CCSK）调制。介绍了一种基于32-BOK调制的JTIDS新型信号,该信号与原有信号兼容,并使数据传输速率提高了一倍;从理论上,分别对加性白噪声和脉冲噪声干扰条件下的误码率进行了分析。仿真结果表明,基于32-BOK调制的JTIDS信号性能相对于CCSK调制有了很大提高。     

JTIDS系统抗干扰性能仿真

针对联合战术信息分发系统（JTIDS）物理层传输波形建立了MATLAB仿真模型,并对其抗白 噪声干扰、单频或阻塞式干扰,以及组网的性能进行了仿真和分析,为JTIDS系统抗干扰技 术的研究提供参考。     

非系统RS(31,19)编译码算法研究与FPGA实现

针对战术数据链系统低时延数据传输需求,提出一种适用于数据链系统的信道编码方案—非系统缩短码RS(31,19)。本文从MS多项式的观点讨论了非系统RS码的编码和译码算法,并对缩短RS码的编译码算法进行了研究。最后在FPGAEP3SE110上采用了一种改进的BM算法,成功实现RS(31,19)编译码复杂算法,有效提高了译码速度,简化了数据链系统硬件设计。     

焊料与金属材料对陶瓷/金属封接强度的影响

对焊料与金属材料对陶瓷/金属封接强度的影响进行了初步分析与探讨。发现:用AuCu、AuNi焊料焊接陶瓷/可伐时,因为封接件的断裂模式为大量Mo-Ni分层,所以平均封接强度只有80MPa;用AgCu、PdAgCu焊料焊接陶瓷/可伐时,封接件的断裂模式为Mo-Mo分层或Mo-Ni分层,平均封接强度在100MPa左右;用Ag、Cu焊料焊接陶瓷/可伐时,封接件的断裂模式为粘瓷或瓷断,平均封接强度达150MPa。用AgCu、PdAgCu、AuCu焊料焊接陶瓷/无氧铜时,因为封接件的断裂模式为粘瓷或瓷断,所以平均封接强度在150MPa左右,比用同种焊料焊接陶瓷/可伐时最高提高了80%。     

Diluted magnetic semiconductors

Diluted magnetic semiconductors (DMSs), i.e. semiconducting crystals whose lattice is made up in part of substitutional magnetic ions (e.g. Cd_1-xMn_xTe, Hg_1-xFe_x Se, Zn_1-xCo_xS), are reviewed. The focus is on materials of the type A_1-x^II Mn_xB ^VI, which are the most thoroughly understood. However, the similarities and differences between these materials and the A_1-x ^IIFe_xB^VI and A_1-^IICo_xB^VI systems are discussed wherever information on the latter system is available. The band structure of the materials, which determines their basic semiconducting properties, is examined. Special attention is given to exchange interactions between the magnetic ions themselves (the d -d interaction) and the interaction between the magnetic ions and band electrons (the sp-d interaction). Magnetic phenomena in DMS alloys are considered. Special attention is given to the physics of layered structures, such as quantum wells and superlattices, involving DMS materials. The prospects of device applications made possible by the properties of DMS alloys are assessed     

有机-无机复合薄膜电致发光器件中势垒对光电性能的影响

利用无机非晶SiO2与有机聚合物PPV复合制备了异质结器件,研究了不同层之间由于能级匹配而产生的势垒对整个器件的光电性能的影响。对于单层有机器件ITO/PPV/Al及双层有机无机复合器件ITO/PPV/SiO2/Al,空穴的注入取决于ITO/PPV界面的势垒,空穴是多数载流子,发光强度主要取决于电子的注入。单层器件电子的注入能力与PPV/Al界面的势垒有关;双层器件由于引进SiO2层,提高了电子的注入能力,其发光强度和发光效率较单层器件都有改善。对于3层有机-无机复合器件ITO/SiO2/PPV/SiO2/Al,在两个方向上电子注入的势垒不同,电子的注入能力有所差别,交流激发时,当Al电极为负(ITO为正)时,器件的最大瞬时发光强度是当ITO电极为负(Al为正)时最大瞬时发光强度的1.3倍。     

Characteristics of Single and Coupled Microstrips on Anisotropic Substrates

In this paper, the effect of an anisotropic substrate on the characteristics of covered microstrip is presented for single and coupled lines. The Green's function is obtained in integral and series form for an arbitrary anisotropic substrate. Computer programs based on the method of moments approach [1], [2] are employed and results are presented in graphical form for impedance Z, coupling constant K, and phase velocity v/sub p/ as functions of n/sub x/ / n/sub y/ (the ratio of the substrate indices of refraction). Z, K, and v/sub p/ are studied for various w/H, S/H, and B/H ratios where w is the line width (w/sub 1/ and w/sub 2/ for coupled lines), S is the separation between coupled lines, B is the separation between ground planes, and H is the substrate thickness.     

On lowest density MDS codes

Let F_q denote the finite field GF(q) and let h be a positive integer. MDS (maximum distance separable) codes over the symbol alphabet F_q^b are considered that are linear over F _q and have sparse (“low-density”) parity-check and generator matrices over F_q that are systematic over F_q^b. Lower bounds are presented on the number of nonzero elements in any systematic parity-check or generator matrix of an F_q-linear MDS code over F_q^b, along with upper bounds on the length of any MDS code that attains those lower bounds. A construction is presented that achieves those bounds for certain redundancy values. The building block of the construction is a set of sparse nonsingular matrices over F_q whose pairwise differences are also nonsingular. Bounds and constructions are presented also for the case where the systematic condition on the parity-check and generator matrices is relaxed to be over F_q, rather than over F_q^b     

Determination of the maximum scan-gain contours of a beam-scanning paraboloid and their relation to the Petzval surface

The scan-plane fields in the focal region of a beam-scanning paraboloid are determined from physical optics. Amplitude and phase contours are presented, and comparisons are made with the geometrical-optics results. Contours for maximum scan-gain are determined as a function ofF/Dand illumination taper and compared with the Petzval surface. Unless theF/Dis very large or spillover is excessive, a higher scan gain is achieved when the axis of a directional feed is parallel to the axis of the reflector than when the feed is directed toward the vertex. The contour of maximum scan-gain is a function of both illumination taper andF/D. In general, largerF/Dvalues tend to have a maximum-gain contour close to the focal plane, while the smallerF/Dvalues tend to have a maximum-gain contour closer to the Petzval surface. Increasing the illumination taper moves the maximum-gain contour closer to the Petzval surface. Normalized maximum-gain contours are presented as a function of beamwidths of scan. The frequency dependence of these results is discussed.     

The Electromagnetic Field of an Insulated Antenna in a Conducting Or Dielectric Medium

Insulated antennas are useful for localized heating as in the hyperthermia treatment of tumors and the extraction of shale oil. The distribution of current in and the admittance of a center-driven dipole embedded in a general medium are reviewed. Formulas for the electric field generated by the currents in the dipole are derived for all points outside the antenna. Near the antenna, the field is elliptically polarized. Formulas for the polarization ellipses are derived and evaluated for antennas with electrical half-lengths Beta/sub L/h = pi/4, pi/2, pi, and 3pi/2, where k/sub L/ =beta/sub L/ + i alpha/sub L/ is the wavenumber of the current, and this is different from the wavenumber of the ambient medium.     

Implementation of AC servo controllers employing frequency-domainoptimization techniques

The design and implementation of a permanent magnet synchronous motor drive based on H₂ and H_∞ optimal control theory are presented. A mathematical model of the drive is introduced. Based on appropriate assumptions, the model is reduced to a second-order, linear time-invariant system so that the H₂ and H_∞ optimization techniques are applicable. H₂ and H_∞ controllers are derived on the basis of the simplified model. A stability analysis is conducted, and stability regions based on controller tuning parameters and sampling periods are constructed. The relationship between closed-loop bandwidth and sampling period due to discretization effect is investigated. Implementation of the controllers and experimental results are described. A multiprocessor-based, fully digital control system is used to realize and experimentally verify the H₂ and H_∞ control algorithms. Controller performance is evaluated in terms of speed and position responses, and closed-loop and sensitivity frequency responses     

Conditions at a p-n junction in the presence of collected current

An abrupt p-n junction, such as occurs at the collector junction of an n-p-n transistor, is considered. The ratio of n- to p-region conductivity is taken to be very high, so that the transition region is restricted almost entirely to the p-region. The electron density distribution n within the transition region is investigated as a function of the applied reverse bias V_c, and of the minority carrier electron current density J which is injected into the transition region from the neutral p-region. It is shown that significant departures occur from the conventional solutions in which the presence of current is neglected. In particular, the electron density n_c at the plane of injection and the transition region thickness w_t, used as collector boundary conditions in the analysis of transistor operation, are shown to be current-dependent.

Two cases are considered. In Case I, applicable to transistors with an epitaxial layer in the base region below the collector, the electron velocity is assumed much less than the limiting drift velocity. For low injection level, where the minority carrier density n is everywhere less than the equilibrium majority carrier density p_p, the transition region is essentially a depletion region and the injected electrons move in an electric field determined uniquely by the applied voltage. It is shown that n_c ∝ J and w_t ∝ V_c^1/2. For high injection level, when n p_p, the transition region is essentially an accumulation region, and conditions of space-charge-limited current flow are established for which n_c ∝ J^2/3 and . The low-level injection results are primarily of interest as analytical extensions of the classical treatment. The high-level injection results are also relevant to the treatment of the dielectric diode.

In Case II, applicable to most alloy and diffused-base transistors, the electron velocity is assumed equal to the limiting drift velocity throughout the transition region. Mobile carrier depletion at low injection again gives way to accumulation at high injection. The functional relationships remain as for Case I at low injection, but become at high injection.

Semi-quantitative and detailed quantitative treatments are developed, and normalized graphs of the minority carrier density as a function of distance within the transition region are given for various junction voltages and injected currents.     

Theory and factorization for a class of structurally regular biorthogonal filter banks

Regularity is a fundamental and desirable property of wavelets and perfect reconstruction filter banks (PRFBs). Among others, it dictates the smoothness of the wavelet basis and the rate of decay of the wavelet coefficients. This paper considers how regularity of a desired degree can be structurally imposed onto biorthogonal filter banks (BOFBs) so that they can be designed with exact regularity and fast convergence via unconstrained optimization. The considered design space is a useful class of M-channel causal finite-impulse response (FIR) BOFBs (having anticausal FIR inverses) that are characterized by the dyadic-based structure W(z)=I-UV/sup /spl dagger//+z/sup -1/UV/sup /spl dagger// for which U and V are M/spl times//spl gamma/ parameter matrices satisfying V/sup /spl dagger//U=I/sub /spl gamma//, 1/spl les//spl gamma//spl les/M, for any M/spl ges/2. Structural conditions for regularity are derived, where the Householder transform is found convenient. As a special case, a class of regular linear-phase BOFBs is considered by further imposing linear phase (LP) on the dyadic-based structure. In this way, an alternative and simplified parameterization of the biorthogonal linear-phase filter banks (GLBTs) is obtained, and the general theory of structural regularity is shown to simplify significantly. Regular BOFBs are designed according to the proposed theory and are evaluated using a transform-based image codec. They are found to provide better objective performance and improved perceptual quality of the decompressed images. Specifically, the blocking artifacts are reduced, and texture details are better preserved. For fingerprint images, the proposed biorthogonal transform codec outperforms the FBI scheme by 1-1.6 dB in PSNR.