Decoherence of nuclear spin quantum memory in a quantum dot

Recently, an ensemble of nuclear spins in a quantum dot have been proposed as a long-lived quantum memory. A quantum state of an electron spin in the dot can be faithfully transfered into nuclear spins through controlled hyperfine coupling. Here we study the decoherence of this memory due to nuclear spin dipolar coupling and inhomogeneous hyperfine interaction during the storage period. We calculated the maximum fidelity of writing, storing, and reading operations. Our results show that nuclear spin dynamics can severely limit the performance of the proposed device for quantum information processing and storage based on nuclear spins.     

A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor

One proposal for a solid-state-based quantum bit (qubit) is to control coupled electron spins on adjacent semiconductor quantum dots. Most experiments have focused on quantum dots made from III-V semiconductors; however, the coherence of electron spins in these materials is limited by hyperfine interactions with nuclear spins. Ge/Si core/shell nanowires seem ideally suited to overcome this limitation, because the most abundant nuclei in Ge and Si have spin zero and the nanowires can be chemically synthesized defect-free with tunable properties. Here, we present a double quantum dot based on Ge/Si nanowires in which we can completely control the coupling between the dots and to the leads. We also demonstrate that charge on the double dot can be detected by coupling it capacitively to an adjacent nanowire quantum dot. The double quantum dot and integrated charge sensor serve as an essential building block to form a solid-state qubit free of nuclear spin.     

Atomic-scale magnetometry of distant nuclear spin clusters via nitrogen-vacancy spin in diamond

The detection of single nuclear spins is an important goal in magnetic resonance spectroscopy. Optically detected magnetic resonance can detect single nuclear spins that are strongly coupled to an electron spin, but the detection of distant nuclear spins that are only weakly coupled to the electron spin has not been considered feasible. Here, using the nitrogen-vacancy centre in diamond as a model system, we numerically demonstrate that it is possible to detect two or more distant nuclear spins that are weakly coupled to a centre electron spin if these nuclear spins are strongly bonded to each other in a cluster. This cluster will stand out from other nuclear spins by virtue of characteristic oscillations imprinted onto the electron spin decoherence profile, which become pronounced under dynamical decoupling control. Under many-pulse dynamical decoupling, the centre electron spin coherence can be used to measure nuclear magnetic resonances of single molecules. This atomic-scale magnetometry should improve the performance of magnetic resonance spectroscopy for applications in chemical, biological, medical and materials research, and could also have applications in solid-state quantum computing.     

Quantum control in spintronics

Superposition and entanglement are uniquely quantum phenomena. Superposition incorporates a phase that contains information surpassing any classical mixture. Entanglement offers correlations between measurements in quantum systems that are stronger than any that would be possible classically. These give quantum computing its spectacular potential, but the implications extend far beyond quantum information processing. Early applications may be found in entanglement-enhanced sensing and metrology. Quantum spins in condensed matter offer promising candidates for investigating and exploiting superposition and entanglement, and enormous progress is being made in quantum control of such systems. In gallium arsenide (GaAs), individual electron spins can be manipulated and measured, and singlet-triplet states can be controlled in double-dot structures. In silicon, individual electron spins can be detected by ionization of phosphorus donors, and information can be transferred from electron spins to nuclear spins to provide long memory times. Electron and nuclear spins can be manipulated in nitrogen atoms incarcerated in fullerene molecules, which in turn can be assembled in ordered arrays. Spin states of charged nitrogen vacancy centres in diamond can be manipulated and read optically. Collective spin states in a range of materials systems offer scope for holographic storage of information. Conditions are now excellent for implementing superposition and entanglement in spintronic devices, thereby opening up a new era of quantum technologies.     

Hole spin relaxation in Ge-Si core-shell nanowire qubits

Controlling decoherence is the biggest challenge in efforts to develop quantum information hardware. Single electron spins in gallium arsenide are a leading candidate among implementations of solid-state quantum bits, but their strong coupling to nuclear spins produces high decoherence rates. Group IV semiconductors, on the other hand, have relatively low nuclear spin densities, making them an attractive platform for spin quantum bits. However, device fabrication remains a challenge, particularly with respect to the control of materials and interfaces. Here, we demonstrate state preparation, pulsed gate control and charge-sensing spin readout of hole spins confined in a Ge-Si core-shell nanowire. With fast gating, we measure T(1) spin relaxation times of up to 0.6 ms in coupled quantum dots at zero magnetic field. Relaxation time increases as the magnetic field is reduced, which is consistent with a spin-orbit mechanism that is usually masked by hyperfine contributions.     

Zero-field optical manipulation of magnetic ions in semiconductors

Controlling and monitoring individual spins is desirable for building spin-based devices, as well as implementing quantum information processing schemes. As with trapped ions in cold gases, magnetic ions trapped on a semiconductor lattice have uniform properties and relatively long spin lifetimes. Furthermore, diluted magnetic moments in semiconductors can be strongly coupled to the surrounding host, permitting optical or electrical spin manipulation. Here we describe the zero-field optical manipulation of a few hundred manganese ions in a single gallium arsenide quantum well. Optically created mobile electron spins dynamically generate an energy splitting of the ion spins and enable magnetic moment orientation solely by changing either photon helicity or energy. These polarized manganese spins precess in a transverse field, enabling measurements of the spin lifetimes. As the magnetic ion concentration is reduced and the manganese spin lifetime increases, coherent optical control and readout of single manganese spins in gallium arsenide should be possible.     

Spin state readout by quantum jump technique: for the purpose of quantum computing

Utilizing the Pauli-blocking mechanism we show that shining circular polarized light on a singly-charged quantum dot induces spin dependent fluorescence. Employing the quantum-jump technique we demonstrate that this resonance luminescence, due to a spin dependent optical excitation, serves as an excellent readout mechanism for measuring the spin state of a single electron confined to a quantum dot.     

Electrically tuned spin-orbit interaction in an InAs self-assembled quantum dot

Electrical control over electron spin is a prerequisite for spintronics spin-based quantum information processing. In particular, control over the interaction between the orbital motion and the spin state of electrons would be valuable, because this interaction influences spin relaxation and dephasing. Electric fields have been used to tune the strength of the spin-orbit interaction in two-dimensional electron gases, but not, so far, in quantum dots. Here, we demonstrate that electrical gating can be used to vary the energy of the spin-orbit interaction in the range 50-150 μeV while maintaining the electron occupation of a single self-assembled InAs quantum dot. We determine the spin-orbit interaction energy by observing the splitting of Kondo effect features at high magnetic fields.     

Spin Effects in Lateral Quantum Dots

We present the review of our work on spin effects in single lateral quantum dots with the emphasis on the results of Coulomb blockade spectroscopy studies. Realization of a spin-based quantum bit proposal in a lateral quantum dot is discussed. Described are the ways of isolating a single electron spin in a dot containing only one as well as many electrons. Demonstrated is a current readout of spin transitions in a dot by means of spin blockade spectroscopy due to spin polarized injection/detection mechanism in a lateral dot. Discussed are transitions induced both by changing a magnetic field and a number of electrons in a dot with the emphasis on the effects observed close to filling factor in a dot = 2.     

Spin-polarized light-emitting diodes with Mn-doped InAs quantum dot nanomagnets as a spin aligner

We have fabricated and characterized surface-emitting, spin-polarized light-emitting diodes with a Mn-doped InAs dilute magnetic quantum dot spin-injector and contact region grown by low-temperature molecular beam epitaxy, and an In(0.4)Ga(0.6)As quantum dot active region. Energy-dispersive X-ray and electron energy loss spectroscopies performed on individual dots indicate that the Mn atoms incorporate within the dots themselves. Circularly polarized light is observed up to 160 K with a maximum degree of circular polarization of 5.8% measured at 28 K, indicating high-temperature spin injection and device operation.     

Detailed Measurements of Nuclear Spin Polarizations in a Single InAlAs Quantum Dot Through Overhauser Shift of Photoluminescence

We investigated optical pumping of nuclear spin polarizations in a single self-assembled In_0.75Al_0.25As/Al_0.3Ga_0.7As quantum dot. The nuclear spin polarization exhibits the abrupt jump and hysteresis in the excitation power dependence at a particular excitation polarization. Measurement of circular polarization rate of the photoluminescence reveals that the abrupt change of the nuclear spin polarization is created mainly by the spin flip-flop process between nuclei and an electron of a positive charged exciton in this single quantum dot. Model calculation explains well the experimentally observed bistable behavior in InAlAs quantum dot. By using this abrupt change, the sign and magnitude of electron and hole g-factors in z-direction are verified.      

Exploring nanoscale magnetism in advanced materials with polarized X-rays

Nanoscale magnetism is of paramount scientific interest and high technological relevance. To control magnetization on a nanoscale, both external magnetic fields and spin polarized currents, which generate a spin torque onto the local spin configuration, are being used. Novel ideas of manipulating the spins by electric fields or photons are emerging and benefit from advances in nano-preparation techniques of complex magnetic materials, such as multiferroics, ferromagnetic semiconductors, nanostructures, etc.Advanced analytical tools are needed for their characterization. Polarized soft X-rays using X-ray dichroism effects are used in a variety of spectroscopic and microscopic techniques capable of quantifying in an element, valence and site-sensitive way basic properties of ferro(i)- and antiferromagnetic systems, such as spin and orbital moments, nanoscale spin configurations and spin dynamics with sub-ns time resolution. Future X-ray sources, such as free electron lasers will provide an enormous increase in peak brilliance and open the fs time window to studies of magnetic materials. Thus fundamental magnetic time scales with nanometer spatial resolution can be addressed.This review provides an overview and future opportunities of analytical tools using polarized X-rays by selected examples of current research with advanced magnetic materials.     

Enhancement of spin coherence using Q-factor engineering in semiconductor microdisc lasers

Semiconductor microcavities offer unique means of controlling light-matter interactions in confined geometries, resulting in a wide range of applications in optical communications and inspiring proposals for quantum information processing and computational schemes. Studies of spin dynamics in microcavities, a new and promising research field, have revealed effects such as polarization beats, stimulated spin scattering and giant Faraday rotation. Here, we study the electron spin dynamics in optically pumped GaAs microdisc lasers with quantum wells and interface-fluctuation quantum dots in the active region. In particular, we examine how the electron spin dynamics are modified by the stimulated emission in the discs, and observe an enhancement of the spin-coherence time when the optical excitation is in resonance with a high-quality (Q approximately 5,000) lasing mode. This resonant enhancement, contrary to expectations from the observed trend in the carrier-recombination time, is then manipulated by altering the cavity design and dimensions. In analogy with devices based on excitonic coherence, this ability to engineer coherent interactions between electron spins and photons may provide new pathways towards spin-dependent quantum optoelectronics.     

Hyperfine interactions in graphene and related carbon nanostructures

Hyperfine interactions, magnetic interactions between the spins of electrons and nuclei, in graphene and related carbon nanostructures are studied. By using a combination of accurate first principles calculations on graphene fragments and statistical analysis, I show that both isotropic and dipolar hyperfine interactions in sp2 carbon nanostructures can be accurately described in terms of the local electron spin distribution and atomic structure. A complete set of parameters describing the hyperfine interactions of 13C and other nuclear spins at substitution impurities and edge terminations is determined. These results permit the design of graphene-based nanostructures allowing for longer electron spin coherence times which are required by spintronics and quantum information processing applications. Practical recipes for minimizing hyperfine interactions in carbon nanostructures are given.     

Electron and spin transport in adiabatic quantum pump based on armchair graphene nanoribbons

The phenomenon of adiabatic quantum pump in double-barrier structures based on armchair graphene nanoribbons has been theoretically analyzed within the framework of the tight binding approximation. An analytical expression for a bilinear response is obtained that is valid at small Fermi energies. Using the effect of proximity to a ferromagnetic dielectric, it is possible to obtain both electron and pure spin currents. Dependences of the generated electron and spin currents on the Fermi energy have been numerically calculated. The validity of the adiabatic approximation is assessed based on the dwell time for electron travelling through the system.     

Spin characterization and control over the regime of radiation-induced zero-resistance states

Over the regime of the radiation-induced zero-resistance states and associated oscillatory magnetoresistance, we propose a low-magnetic-field analog of quantum-Hall-limit techniques for the electrical detection of electron spin and nuclear magnetic resonance, dynamical nuclear polarization via electron spin resonance, and electrical characterization of the nuclear spin polarization via the Overhauser shift. In addition, beats observed in the radiation-induced oscillatory magnetoresistance are developed into a method to measure and control the zero-field spin splitting due to the Bychkov-Rashba and bulk inversion asymmetry terms in the high-mobility GaAs-AlGaAs system.     

Charge sensing of precisely positioned p donors in Si

Real-time sensing of (spin-dependent) single-electron tunneling is fundamental to electrical readout of qubit states in spin quantum computing. Here, we demonstrate the feasibility of detecting such single-electron tunneling events using an atomically planar charge sensing layout, which can be readily integrated in scalable quantum computing architectures with phosphorus-donor-based spin qubits in silicon (Si:P). Using scanning tunneling microscopy (STM) lithography on a Si(001) surface, we patterned a single-electron transistor (SET), both tunnel and electrostatically coupled to a coplanar ultrasmall quantum dot, the latter consisting of approximately four P donors. Charge transitions of the quantum dot could be detected both in time-averaged and single-shot current response of the SET. Single electron tunneling between the quantum dot and the SET island on a time-scale (τ ～ ms) two-orders-of-magnitude faster than the spin-lattice relaxation time of a P donor in Si makes this device geometry suitable for projective readout of Si:P spin qubits. Crucial to scalability is the ability to reproducibly achieve sufficient electron tunnel rates and charge sensitivity of the SET. The inherent atomic-scale control of STM lithography bodes extremely well to precisely optimize both of these parameters.     

Dynamic Nuclear Polarization and Relaxation of H and D Atoms in Solid Mixtures of Hydrogen Isotopes

We report on a study of dynamic nuclear polarization and electron and nuclear spin relaxation of atomic hydrogen and deuterium in solid molecular matrices of \(\hbox {H}_{2}, \hbox {D}_{2}\), and HD mixtures. The electron and nuclear spin relaxation times (\(T_{1\mathrm{e}}\) and \(T_{1\mathrm{N}}\)) were measured within the temperature range 0.15–2.5 K in a magnetic field of 4.6 T, conditions which ensure a high polarization of electron spins. We found that \(T_{1\mathrm{e}}\) is nearly temperature independent in this temperature range, while \(T_{1\mathrm{N}}\) decreased by two orders of magnitude upon raising temperature. Such strong temperature dependence is typical for the nuclear Orbach mechanism of relaxation via the electron spins. We found that the nuclear spins of H atoms in solid \(\hbox {D}_{2}\) and \(\hbox {D}_{2}{:}\hbox {HD}\) can be efficiently polarized by the Overhauser effect. Pumping the forbidden transitions of H atoms also leads to DNP, with the efficiency strongly dependent on the concentration of D atoms. This behavior indicates the cross effect mechanism of the DNP and nuclear relaxation, which turns out to be well resolved in the conditions of our experiments. Efficient DNP of H atoms was also observed when pumping the middle D line located in the center of the ESR spectrum. This phenomenon can be explained in terms of clusters or pairs of H atoms with a strong exchange interaction. These clusters have partially allowed transitions in the center of the ESR spectrum, and DNP may be created via the resolved cross effect.     

Spin Dynamics and Spin Transport

Spin-orbit (SO) interaction critically influences electron spin dynamics and spin transport in bulk semiconductors and semiconductor microstructures. This interaction couples electron spin to dc and ac electric fields. Spin coupling to ac electric fields allows efficient spin manipulating by the electric component of electromagnetic field through the electric dipole spin resonance (EDSR) mechanism. Usually, it is much more efficient than the magnetic manipulation due to a larger coupling constant and the easier access to spins at a nanometer scale. The dependence of the EDSR intensity on the magnetic field direction allows measuring the relative strengths of the competing SO coupling mechanisms in quantum wells. Spin coupling to an in-plane electric field is much stronger than to a perpendicular field. Because electron bands in microstructures are spin split by SO interaction, electron spin is not conserved and spin transport in them is controlled by a number of competing parameters, hence, it is rather nontrivial. The relation between spin transport, spin currents, and spin populations is critically discussed. Importance of transients and sharp gradients for generating spin magnetization by electric fields and for ballistic spin transport is clarified.     

Spin Dynamics and Spin Transport

Spin-orbit (SO) interaction critically influences electron spin dynamics and spin transport in bulk semiconductors and semiconductor microstructures. This interaction couples electron spin to dc and ac electric fields. Spin coupling to ac electric fields allows efficient spin manipulating by the electric component of electromagnetic field through the electric dipole spin resonance (EDSR) mechanism. Usually, it is much more efficient than the magnetic manipulation due to a larger coupling constant and the easier access to spins at a nanometer scale. The dependence of the EDSR intensity on the magnetic field direction allows measuring the relative strengths of the competing SO coupling mechanisms in quantum wells. Spin coupling to an in-plane electric field is much stronger than to a perpendicular field. Because electron bands in microstructures are spin split by SO interaction, electron spin is not conserved and spin transport in them is controlled by a number of competing parameters, hence, it is rather nontrivial. The relation between spin transport, spin currents, and spin populations is critically discussed. Importance of transients and sharp gradients for generating spin magnetization by electric fields and for ballistic spin transport is clarified.