60瓦半导体激光器光纤耦合器件

应用光纤列阵耦合方式，对大功率半导体激光器线列阵输出光束的快轴方向用一根柱透镜准直，准直后的光束耦合到光纤列阵中，实现出纤功率为60瓦的大功率半导体激光二极管线列阵光纤耦合器件，耦合效率大于80％，光纤的数值孔径NA为0．11。     

摘要

940nm列阵窗口半导体激光器 李辉,李军,曲轶,薄报学,张兴德 (长春光学精密机械学院高功率半导体激光国家重点实验室,长春 13 0022) Tel:0431-5303282, Fax:0431-5384517, E-mail:hpld@mail.jl.cn 摘要：设计了梯度折射率分别限制单量子阱 (GRIN\|SCH\|SQW) 激光器结构,并利用分子束外延(MBE)方法生长出该结构材料,采用宽接触结构制作出cm条列阵半导体激光器。利用量子阱互混原理,采用高温退火技术制作列阵激光器的无吸收窗口结构。列阵半导体激光器的输出功率达到80W(室温,准连续,重复频率500Hz, 脉冲宽度100μs), 峰值波长为93 9(941nm。 LD泵浦的高效率YVO4/KTP单频绿激光器研究 郑权,檀慧明,赵岭 （中国科学院长春光学精密机械与物理研究所,长春 130022) Tel: 0431-5696601 Fax:0431-5696653 E-mail:zhengquanok@263.net 摘要：本文将短程吸收与双折射滤光片技术有机地结合起来,实现了简单直腔YVO4／KTP组合结构的高效率单频绿激光器稳定输出。实验结果测得泵光阈值约为50mW。当注入泵浦功率为 400mW时,得到26mW的稳定单频绿光输出,光光转换效率达到6.5%。     

微透镜面形误差影响LD光束准直的研究

采用求解几何光学点列图的办法,针对半导体激光器准直微透镜各种不同的面形误差,用实例分析计算了它们对LD光束准直的影响,从结果可看出中部出现微小偏差的微透镜对LD光束准直效果优于具有其他类型偏差的微透镜,并针对具体情况给微透镜阵列的制作提供参考。     

菲涅尔型阵列光纤准直器的研究

菲涅尔透镜列阵，具有易阵列化的优点，设计中心波长相同的透镜列阵和中心波长不同的透镜列阵，并对由此列阵构成的准直器的光束耦合特征进行分析和计算，与通用的准直器的相关参数进行比较，表明菲涅尔透镜列阵在光束准直耦合中具有较高的耦合效率，可以用于制作阵列光纤准直器。     

940nm高功率列阵半导体激光器

利用分子束外延生长方法生长出ＩｎＧａＡｓ／ＧａＡｓ应变量子阱材料。利用该材料制作出的应变量子阱列阵半导体激光器准连续（５００μｓ,１００Ｈｚ）输出功率达到２７Ｗ（室温）,峰值波长为９３９￣９４１ｎｍ,并分析了影响列阵半导体激光器输出功率的因素。     

940nm列阵窗口半导体激光器

940nm列阵窗口半导体激光器     

采用组合透镜阵列准直半导体激光器线阵

为了满足半导体激光器线阵的远距离应用要求,需要对激光束进行准直处理.提出了一种由垂直双半圆柱透镜组合阵列构成的准直器,采用光线追迹的方法推导了激光束通过准直器的传输方程,分析了光线出射角与透镜阵列参数之间的关系,得出了准直器的最优设计参数,然后在zemax-EE非序列模式下仿真了此准直器的三维效果图以及探测器成像效果,得到的激光光斑接近于矩形,非相干照度集中在中央区域,并且经过准直器后的发散角大约为3 mrad.设计的准直透镜可以同时压缩快慢轴的激光束发散角,制作简单,安装方便.     

应用PSD器件实现非接触枪械自动机运动规律测试

本文介绍一种应用光电位置敏感传感器PSD器件、SCOTCHLITE(原向反射屏)、经柱面镜准直扩束后的半导体激光器及其计算机组成的光学测试系统,重点论述了采用该系统实现对信号真实、连续、快速的测量.     

以半导体激光器为光源的准直研究

对半导体激光器的准直装置、温度变化对准直精度的影响、温度控制方法作了论述。试验表明,采用半导体激光器作准直光源,准直的稳定性可达到1×10~(-6)。     

衍射光学元件灰度掩模板激光制作系统研究

根据灰度掩模的制作理论,提出了由PP8000胶片输出仪、远心成像透镜组、平行准直He-Cd激光器构成的精缩投影曝光灰度掩模制作系统。通过灰度掩模平面不同位置处提供可变的透过率,经一次光刻后得到所需的衍射光学元件。该系统不仅可采用黑白胶片制作高分辨率灰度掩模板,还可根据彩色灰度等效理论,利用彩色等效胶片实现256灰度级的扩展细分,以进一步提高灰度掩模板制作的分辨率。对于16台阶灰度掩模,其分辨率可以从0~255扩展到0~1280灰度级。利用该系统给出了二元光栅精缩后的感光图片。     

Monolithic integrated four DFB lasers array with a polymer-based combiner for WDM applications

Compact and low cost integrated photonic components will be of significant importance for a wider penetration of optical technologies into private customer access systems. Hybrid semiconductor/polymer integrated technologies are very promising to achieve this goal by virtue of the highly flexible nature of polymers at both molecular and material scale, of their compatibility with processing steps used in semiconductor technologies, and of their reasonably low cost. One example is an integrated semiconductor 4-wavelength laser array with a polymer based 1–4 passive optical combiner on the same substrate. The polymer waveguide structure is a polysulfone material stripe embedded in PMMA cladding layers, and the laser structure is a buried ridge stripe (BRS). The optical coupling between the active and passive elements is a butt-joint coupling via a reactive ion beam etched (RIBE) semiconductor mirror facet. Such a photonic integration simplifies the optical coupling between a laser array and single mode fibers, while reducing the packaging cost. This optical device has been achieved with interesting performances such as small dimension size (1.2 × 0.5 mm), low laser threshold current, and output powers for each laser from the polymeric waveguide port of at least 1.5 mW without additional on-chip optical amplification.     

Theory and optimization of lens ducts

Lens ducts are simple optical devices that have found application in the coupling of pump radiation from extended two-dimensional semiconductor laser diode arrays into solid-state laser gain media. The operation of these devices relies on the combined effects of lensing at their curved input surface and channeling by total internal reflection off their canted planar sides, to contain and couple semiconductor diode laser light efficiently to the input face of a solid-state laser crystal or glass. The lens duct provides a robust method for amplifying the irradiance of laser diode array pump sources and has made possible a scalable diode end-pumping architecture that offers the opportunity to expand significantly the number of ions and transitions that can be practically engaged in diode-pumped solid-state laser systems. An analytic model that describes the transfer efficiency of lens ducts and aids in the optimization of their design is presented.     

高功率半导体激光器阵列微通道热沉的温度

微通道热沉是解决高功率半导体激光器阵列散热有效的途径,本文利用有限元方法研究半导体激光器的温度,给出了横向尺寸为200 μm×60 μm单个及间距100μm的3,5,9的微通道热沉中的温度,得到微通道数量影响激光器最高温度变化.结果表明,单个微通道构成的热沉可以把注入电流为36 A稳态工作的激光器阵列冷却到342 K,9个微通道可以冷却到306 K.仿真了增加微通道间距的温度分布,发现为间距260 μm的5个微通道热沉,可以将激光器冷却到308 K.     

Simultaneous injection locking of couples of high-power broad-area lasers driven by a common current source

We experimentally demonstrate the simultaneous injection locking of pairs of high-power broad-area laser diodes in a 19-laser array driven by a common current source. Each pair is injection locked by use of a single-mode low-power semiconductor laser. The frequency and phase locking are verified bythe optical spectrum and the interference pattern between the injection-locked lasers. The influence of frequency detuning on the (simultaneous) injection behavior has been experimentally clarified. We validate a necessary condition for the injection locking of a broad-area laser array.     

Resonator fiber optic gyro employing a semiconductor laser

Resonator fiber optic gyro (RFOG) based on the Sagnac effect has the potential to achieve the inertial navigation system requirement with a short sensing coil. Semiconductor laser is one of the key elements for integration and miniaturization of the RFOG. In this paper, an RFOG employing a semiconductor laser is demonstrated. The model of the laser frequency noise induced error in the RFOG is described. To attenuate the laser frequency noise induced error, active frequency stabilization is applied. An online laser frequency noise observation is built, as a powerful optimum criterion for the loop parameters. Moreover, the laser frequency noise observation method is developed as a new measurement tool. With a fast digital proportional integrator based on a single field programmable gate array applied in the active stabilization loop, the laser frequency noise is reduced to 0.021 Hz (1σ). It is equivalent to a rotation rate of 0.07°/h, and close to the shot noise limit for the RFOG. As a result, a bias stability of open-loop gyro output is 9.5°/h (1σ) for the integration time 10 s in an hour observed in the RFOG. To the best of our knowledge, this result is the best long-term stability using the miniature semiconductor laser.     

Demonstration of a home projector based on RGB semiconductor lasers

In this paper, we demonstrate a high-definition 3-liquid-crystal-on-silicon (3-LCOS) home cinema projection system based on RGB laser source modules. Both red and blue laser modules are composed of an array of laser diodes, and the green laser is based on an optically pumped semiconductor laser. The illumination engine is designed to realize high energy efficiency, uniform illumination, and suppression of speckle noise. The presented laser projection system producing 1362 lm D65 light has a volume of about 450×360×160 mm3.     

Laser Doppler blood flow complementary metal oxide semiconductor imaging sensor with analog on-chip processing

A 4 x 4 pixel array with analog on-chip processing has been fabricated within a 0.35 mum complementary metal oxide semiconductor process as a prototype sensor for laser Doppler blood flow imaging. At each pixel the bandpass and frequency weighted filters necessary for processing laser Doppler blood flow signals have been designed and fabricated. Because of the space constraints of implementing an accurate omega(0.5) filter at the pixel level, this has been approximated using the "roll off" of a high-pass filter with a cutoff frequency set at 10 kHz. The sensor has been characterized using a modulated laser source. Fixed pattern noise is present that is demonstrated to be repeatable across the array and can be calibrated. Preliminary blood flow results on a finger before and after occlusion demonstrate that the sensor array provides the potential for a system that can be scaled to a larger number of pixels for blood flow imaging.     

941nm连续波高功率半导体激光器线阵列

用金属有机化合物气相淀积(MOCVD)技术生长了InGaAs／GaAs／AlGaAs分别限制应变单量子阱激光器材料。利用该材料制成了半导体激光器线阵列,连续波工作条件下的中心激射波长为940．5nm,输出功率高达37．7W(45A、2．0V),斜率效率可达0．99W／A(外微分量子效率为75％),最高转换效率超过45％,阈值电流密度为117A／cm^2,该波长的半导体激光器是Yb：YAG固体激光器的理想泵浦源。     

Phased array 1-to-N-way resonator with a convex mirror for phase conjugation

Phased array 1-to-N-way resonators can be relevant in the realization of high output powers from semiconductor laser arrays and have significant advantages over Talbot resonators. However, depending on the number of array elements, the intracavity power density on the output facet can be high, resulting in catastrophic optical mirror damage. We present a variant of the original design that overcomes these power density problems while maintaining the desirable phase-locking and power-combining properties.     

A Pulsed GaAs Laser System for Semiconductor Carrier Lifetime Measurements

An electronic system is described for controlling a semiconductor laser, which is convenient for measuring semiconductor carrier lifetimes of 500 ns or greater by the photoconductive decay method with the laser providing the sample illumination. Particular attention is given to the circuit of the power pulse generator, which was designed to operate the laser above threshold and to provide a means of controlling the output intensity of the laser radiation.