关于砷化镓活化电镀金的研究

描述了在活化的半绝缘砷化镓（Ｓ、Ｉ、ＧａＡｓ）衬底上直接活化电镀金的毫米波集成电路（ＭＭＩＣ）热沉制造工艺，活化剂由ＰｄＣｌ２和ＨＣｌ组成，根据ＧａＡｓ（１００）面的微观结构，讨论了经过程中ＧａＡｓ表面同Ｐｄ＾２＋离子的作用机理，业已表明，活化中生成的Ｐｄ／ＧａＡｓ结构与一般非金属材料活化不同，是一种很化学结合。     

GaAs低能Si^＋及SiF^＋离子注入研究

本文对３０ｋｅｖ Ｓｉ＾＋和分子离子ＳｉＦ＾＋注入半绝缘ＧａＡｓ的行为进行了研究对比。注入Ｓｉ＾２＋样品的Ｓｉ原子纵向分布与相同条件下用ＳＩＣＴ模拟程序理论计算出的分布相一致。经灯光９００℃１０″ＲＴＡ，电激活率可达６０％，电化学Ｃ－Ｖ测得的载流子纵向分布与注入态ＳＩＭＳ结果相同，可以获得近０．２μｍ的ＧａＡｓ有源层。而注入分子离子ＳｉＦ＾＋样品，虽注入层较浅，但灯光退火后，电激活率很低。因此，用     

利用CBE技术在Si衬底上生长GaAs薄膜

采用化学束外延（ＣＢＥ）技术，以三乙基镓（ＴＥＧ）和砷烷（ＡｓＨ３）为源，在Ｓｉ（００１）衬底上生长ＧａＡｓ薄膜．利用Ｈａｌｌ效应、卢瑟福背散射（ＲＢＳ）和高分辨率透射电子显微镜（ＨＲＴＥＭ）检测了外延层的质量．结果表明，ＧａＡｓ薄膜具有ｎ型导电性，载流子浓度为１．３×１０１５ｃｍ－３，其杂质估计是Ｓｉ，它来自衬底的自扩散．外延层的质量随着膜厚的增加而得到明显的改善．在ＧａＡｓ／Ｓｉ界面及其附近，存在高密度的结构缺陷，包括失配位错、堆垛层错和孪晶．这些缺陷完全缓解了ＧａＡｓ外延层和Ｓｉ衬底之间因晶格失配引     

Si~＋、As~＋双离子注入半绝缘GaAs的研究

本文采用Ｓｉ＋和Ｓｉ＋、Ａｓ＋单、双离子多重注入半绝缘砷化镓［ＨＢ－ＳＩＧａＡｓ（Ｃｒ）］．研究发现，双离子注入层经无包封快速热退火后，激活率和电子迁移率较单Ｓｉ＋注入样品明显提高．Ｒａｍａｎ谱显示结构完整性好，并且有好的载流子剖面分布．文中从化学计量比角度出发分析了激活率提高的原因和从注入离子增强扩散系数分布来解释了多重Ｓｉ＋、Ａｓ＋双注入的载流子浓度剖面分布．     

GaAs超高速门阵列集成电路Se离子注入技术研究

采用室温下Ｓｅ＾＋离子注入半绝缘ＧａＡｓ衬底，通过优化注入能量，剂量，注入角度及快速热退火温度，时间，获得了高剂量下杂质激活率大于７４％，注入层平均载流子浓度为（５－６）×１０＾１６－ｃｍ＾－２，平均载流子迁移率为３０１０ｃｍ＾２／ｖ．ｓ，载流子浓度分布陡峭的优质离子注入薄层，成功地研制出３０００门ＧａＡｓ超高速门阵列集成电路。     

P埋层技术研究

介绍了在Ｓｉ￣＋注入的ｎ－ＧａＡｓ沟道层下面用Ｂｅ￣＋或Ｍｇ￣＋注入以形成ｐ埋层。采用此方法做出了阈值电压０～０．２Ｖ，跨导大于１００ｍＳ／ｍｍ的Ｅ型ＧａＡｓＭＥＳＦＥＴ，也做出了夹断电压－０．４～－０．６Ｖ、跨导大于１００ｍＳ／ｍｍ的低阈值Ｄ型ＧａＡｓＭＥＳＦＥＴ。     

气态源分子束外延InP和InAs基Ⅲ－Ⅴ族化合物材料

本文简要报告我们气态源分子束外延实验结果．材料是ＧａＡｓ（１００）衬底上外延的晶格匹配的Ｉｎｙ（Ｇａ１－ｘＡｌｘ）１－ｙＰ（ｘ＝０～１，ｙ＝０．５），ＩｎＧａＰ／ＩｎＡｌＰ多量子阱；在ＩｎＰ（１００）衬底上外延的ＩｎＰ，晶格匹配的ＩｎＧａＡｓ、ＩｎＡｌＡｓ以及ＩｎＰ／ＩｎＧａＡｓ、ＩｎＰ／ＩｎＡｓＰ多量子阱，ＩｎＧａＡｓ／ＩｎＡｌＡＳＨＥＭＴ等．外延实验是用国产第一台化学束外延（ＣＢＥ）系统做的．     

Er,O离子共注入GaAs的二次离子质谱的研究

在Ⅲ－Ⅴ族半导体ＧａＡｓ外延层上共注入Ｅｒ和Ｏ离子（ＧａＡｓ：Ｅｒ，Ｏ）．经面对面优化退火后，光致发光（ｐｈｏｔｏｌｕｍｉｎｅｓｃｅｎｃｅ－ＰＬ）谱中观测到对应Ｅｒ３＋第一激发态到基态４Ｉ１３／２－４Ｉ１５／２跃迁，其相对强度较单注入Ｅｒ的ＧａＡｓ（ＧａＡｓ：Ｅｒ）增强１０倍，且谱线变窄．从二次离子质谱（ＳｅｃｏｎｄａｒｙＩｏｎＭａｓＳｐｅｃｔｒｏｍｅｔｒｙ－ＳＩＭＳ）和卢瑟福背散射实验给出退火前后Ｅｒ在ＧａＡｓ：Ｅｒ样品中的剖面分布．ＳＩＭＳ测量分别给出Ｏ注入前后Ｅｒ和Ｏ在ＧａＡｓ：Ｅｒ，Ｏ中的深度剖面分布，分析表明Ｅｒ和Ｏ共注入后形成光学激活有效的发光中心．     

Impedance Analysis of Grain Barrier Potential in SnO_2 Gas Sensors

ＩｍｐｅｄａｎｃｅＡｎａｌｙｓｉｓｏｆＧｒａｉｎＢａｒｉｅｒＰｏｔｅｎｔｉａｌｉｎＳｎＯ２ＧａｓＳｅｎｓｏｒｓ①ＣＨＥＮＺｈｏｎｇ②，Ｓ．Ｂｉｒｌａｓｅｋａｒａｎ（ＳｃｈｏｌｏｆＥｌｅｃｔｒｏｎｉｃａｌａｎｄＥｌｅｃｔｒｏｎｉｃｓＥｎｇｉｎｅｒｉｎｇ...     

可调谐DBR激光器、电吸收调制DFB激光器用高质量InGaAsP-MQW材料的选择区域生长

本文报道了采用选择区域生长（Ｓｅｌｅｃｔｉｖｅ ａｒｅａ ｇｒｏｗｔｈ, ＳＡＧ）方法,在 ＳｉＯ２作掩膜的 ＩｎＰ衬底上选择生长出高质量的 ＩｎＧａＡｓＰ－ＭＱＷ,并成功地制作出波长调谐范围达 ６．５ ｎｍ的可调谐 ＤＢＲ激光器和性能可靠的电吸收调制ＤＦＢ激光器．ＳＡＧ成为实现光子集成器件的有效途径,得到广泛的研究,并已实现了ＤＦＢ激光器与电吸收调制器的单片集成 （ｅｌｅｃｔｒｏａｂｓｏｒｐｔｉｏｎ ｍｏｄｕｌａｔｅｄ ＤＦＢ Ｌａｓｅｒ, ＥＭＬ）．我们在国内率先开展这方面的研究,并取得重大的突破． 采用 …     

Growth of high-purity semi-insulating bulk GaAs for integrated-circuit applications

Growth of high-purity bulk semi-insulating GaAs by the Liquid-Encapsulated Czochralski (LEC) method has produced thermally stable, high-resistivity crystals suitable for use in direct ion implantation. Large round substrates have become available for integrated-circuit processing. The implanted wafers have excellent electrical uniformity (±4 percent Vp) and have shown electron mobility as high as 4800cm²/V.s for Se implants with 1.7 × 10¹⁷cm^-3peak doping. Careful control of background doping through in situ synthesis has produced GaAs with Si concentrations as low as 6 × 10¹⁴cm^-3grown from SiO2crucibles. Detailed results of qualification tests for ion implantation in LEC GaAs will be discussed. Feasibility of successful high-speed GaAs large-scale integrated circuits using LEC substrates will be described.     

Characterization of horizontal Bridgman-grown semi-insulating GaAs for ion implantation

Thermal stability of horizontal Bridgman-grown (HB) Cr-doped seme-insulating GaAs is characterized systematically by leakage current measurement. Electrical characteristics for a Si-ion implanted n-layers on GaAs were evaluated by Hall and C-V measurements. The threshold voltage uniformity for MESFETs fabricated on implanted n-layer was also discussed. Not only the leakage current of annealed wafers but also the electrical properties of the ion implanted n-layers have a close correlation with the Cr concentration in the bulk GaAs. The uniformity of the ion implanted n-layer was degraded by the Cr concentration variations in the wafer. In addition to uniformity, mobility data, which show lower values for HB crystals than for undoped LEC crystal, imply the importance of high purity GaAs semi-insulating LEC crystal.     

Influence of erbium ion implantation dose on characteristics of (111) Si:(Er, O) light-emitting diodes operating in p-n-junction breakdown mode

Characteristics of Si:(Er, O) light-emitting diodes (LEDs) fabricated by ion implantation on single-crystal (111) Si substrates and operating under the conditions of avalanche or tunneling breakdown of the p-n junction were studied. The Er³⁺ electroluminescence (EL) intensity depends nonmonotonically on the concentration of implanted rare-earth ions. An increase in the Er³⁺ ion EL intensity with temperature is observed in some tunneling diodes.     

高能Si~+注入Sl-GaAs形成n型埋层

本文报导0.6～5MeV高能Si~+离子注入LEC半绝缘GaAs的快速退火效果,在950℃温度下退火5秒得到最佳电特性.采用多能量叠加注入已制备出平均深度在1.2μm,厚约1.7μm的n~+深埋层,载流子浓度为3～5×10~(17)cm~(-3).在近表面单晶层上作成了性能良好的肖特基接触,其势垒高度约为0.7V.     

Doping and processing epitaxial GexSi1−x films on Si(100) by ion implantation for Si-based heterojunction devices applications

The question of whether one can effectively dope or process epitaxial Si(100)/GeSi heterostructures by ion implantation for the fabrication of Si-based heterojunction devices is experimentally investigated. Results that cover several differention species (B, C, Si, P, Ge, As, BF₂, and Sb), doses (10¹³ to 10¹⁶/cm²), implantation temperatures (room temperature to 150°C), as well as annealing techniques (steady-state and rapid thermal annealing) are included in this minireview, and the data are compared with those available in the literature whenever possible. Implantation-induced damage and strain and their annealing behavior for both strained and relaxed GeSi are measured and contrasted with those in Si and Ge. The damage and strain generated in pseudomorphic GeSi by room-temperature implantation are considerably higher than the values interpolated from those of Si and Ge. Implantation at slightly elevated substrate temperatures (e.g., 100°C) can very effectively suppress the implantation-induced damage and strain in GeSi. The fractions of electrically active dopants in both Si and GeSi are measured and compared for several doses and under various annealing conditions. Solid-phase epitaxial regrowth of GeSi amorphized by implantation has also been studied and compared with regrowth in Si and Ge. For the case of metastable epi-GeSi amorphized by implantation, the pseudomorphic strain in the regrown GeSi is always lost and the layer contains a high density of defects, which is very different from the clean regrowth of Si(100). Solid-phase epitaxy, however, facilitates the activation of dopants in both GeSi and Si, irrespective of the annealing techniques used. For metastable GeSi films that are not amorphized by implantation, rapid thermal annealing is shown to outperform steady-state annealing for the preservation of pseudomorphic strain and the activation of dopants. In general, defects generated by ion implantation can enhance the strain relaxation process of strained GeSi during post-implantation annealing. The processing window that is optimized for ion-implanted Si, therefore, has to be modified considerably for ion-implanted GeSi. However, with these modifications, the mature ion implantation technology can be used to effectively dope and process Si/GeSi heterostructures for device applications. Possible impacts of implantation-induced damage on the reliability of Si/GeSi heterojunction devices are briefly discussed.     

Si~+/B~+双注入单晶硅的快速热退火

用四探针法、扩展电阻法、背散射沟道谱和二次离子质谱等测试分析手段研究了Ｓｉ＋ ／Ｂ＋ 双注入单晶硅的快速热退火行为。结果表明：Ｓｉ＋ 预非晶化注入能有效地抑制注入硼原子的沟道效应;快速热退火Ｓｉ＋ ／Ｂ＋ 注入样品,其注入损伤基本消除,残留二次缺陷少,硼原子电激活率高;优化与控制快速热退火条件和Ｓｉ＋ ／Ｂ＋ 注入参数,制备出了电学特性优良的浅ｐ＋ ｎ 结,其二极管反偏漏电流仅为１．９ ｎＡ·ｃｍ － ２（－ １．４Ｖ）。     

手机用GaAs SPDT开关的全离子注入技术

对移动通信用单刀双掷开关制作工艺中的 Ga As全离子注入技术进行了实验比较和讨论 ,认为 76mmGa As圆片经光片注入 Si离子后包封 40 nm Si O2 +60 nm Si N进行快速退火再进行 B离子注入隔离和器件制作的工艺方法先进、工艺简便、表面物理性能好、产品成本低、重复性和均匀性好、成品率高及器件性能优良。     

半绝缘GaAs中EPR“As_(Ga)”与EL2两种缺陷的对应关系实验研究

为了进一步阐明半绝缘液封直拉(SI LEC)GaAs中EL_2缺陷的本质,本文结合GaAs中有关点缺陷的形成机理进行了EPR“A_(SG_a)”及EL_2两种缺陷的对应关系实验,实验结果可用EL_2的A_(SG_a)V_A_(?)V_G_a原子构型及其应变模型形成机理较好的解释。     

注硅不掺杂半绝缘GaAs中的深能级缺陷

用DLTS法对经两步快速热退火(RTA)后的注硅不掺杂SI-GaAs中的缺陷进行了研究。确定了激活层中存在着两个电子陷阱组(以主能级ET1、ET2标记)及其电学参数的深度分布。在体内,ET1=Ec0.53eV,n=2.310-16cm2;ET2=Ec0.81eV,m=9.710-13cm2;密度典型值为NT1=8.01016cm-3,NT2=3.81016cm-3;表面附近,ET1=Ec0.45eV,NT1=1.91016cm-3;ET2=Ec0.71eV,NT2=1.21016cm-3,分别以[AsiVAs,AsGa]和[VAsAsiVGaAsGa]等作为ET1和ET2的缺陷构型解释了它们在RTA过程中的行为。     

Formation of heavily doped n-type layers in GaAs by multiple ion implantation

N-type layers in GaAs with high free electron concentrations have been produced by multiple implantation of Ga, As, or P with dopant species such as Se, Si, or Ge. The implants that have been investigated include Si, Si + P, Ge, Ge + As, Se, and Se + Ga. The multiple implants Si + P, Ge + As, and Se + Ga gave higher peak carrier concentrations, especially at lower anneal temperatures, than did the respective single implants Si, Ge, and Se. In fact, Ge when implanted alone produced a p-type layer while the Ge + As multiple implant produced an n-type layer. Multiple implants with Si and Ge as dopants showed significant thermal diffusion during the anneal. Multiple implants of Ga with Se, on the other hand, resulted in reduced thermal diffusion in comparison with single Se implants.