Microwave dielectric properties of ultra-low loss Li2MgTi0.7(Mg1/3Nb2/3)0.3O4 ceramics sintered at low temperature by LiF addition

In this work, ultra-low loss Li₂MgTi_0.7(Mg_1/3Nb_2/3)_0.3O₄ ceramics were successfully prepared via the conventional solid-state method. X-ray photoelectron spectroscopy (XPS), thermally stimulated depolarization current (TSDC) and bond energy were used to determine the distinction between intrinsic and extrinsic dielectric loss in (Mg_1/3Nb_2/3)⁴⁺ ions substituted ceramics. The addition of (Mg_1/3Nb_2/3)⁴⁺ ions enhances the bond energy in unit cell without changing the crystal structure of Li₂MgTiO₄, which results in high Q·f value as an intrinsic factor. The extrinsic factors such as porosity and grain size influence the dielectric loss at lower sintering temperature, while the oxygen vacancies play dominant role when the ceramics densified at 1400?°C. The Li₂MgTi_0.7(Mg_1/3Nb_2/3)_0.3O₄ ceramics sintered at 1400?°C can achieve an excellent combination of microwave dielectric properties: ε_r =?16.19, Q·f?=?160,000?GHz and τ_f =??3.14?ppm/°C. In addition, a certain amount of LiF can effectively lower the sintering temperature of the matrix, and the Li₂MgTi_0.7(Mg_1/3Nb_2/3)_0.3O₄-3?wt% LiF ceramics sintered at 1100?°C possess balanced properties with ε_r?=?16.32, Q·f?=?145,384?GHz and τ_f =??16.33?ppm/°C.     

Low-temperature sintering of Ti1−xCux/3Nb2x/3O2 (x = 0.23) microwave dielectric ceramics with CuO and B2O3 addition

The influence of CuO and B₂O₃ addition on the sintering behavior, microstructure and microwave dielectric properties of Ti_1?xCu_x/3Nb_2x/3O₂ (TCN, x = 0.23) ceramic have been investigated. It was found that the addition of CuO and B₂O₃ successfully reduced the sintering temperature of TCN ceramics from 950 to 875 °C. X-ray diffraction studies showed that addition of CuO-B₂O₃ has no effect on the phase composition. The TCN ceramics with 0.5 wt% CuO-B₂O₃ addition showed a high dielectric constant of 95.63, τ_f value of + 329 ppm/°C and a good Q × f value of 8700 GHz after sintered at 875 °C for 5 h, cofirable with silver electrode.     

Low temperature sintering and microwave dielectric properties of Zn1.8SiO3.8 ceramics with BaCu(B2O5) additive for LTCC applications

The Zn_1.8SiO_3.8 (ZS) ceramics with BaCu(B₂O₅) (BCB) additive were synthesized by the conventional solid-state reaction route and the effect of BCB additive on the microwave dielectric properties of the ceramics was investigated. The results demonstrate that BCB could effectively decrease the sintering temperature from 1300?°C to 930?°C and does not induce obviously degradation of the microwave dielectric properties. The 6.wt% BCB added ZS ceramics exhibited a low sintering temperature (~ 930?°C) and excellent dielectric properties of ε_r =?6.79, Q×f =?33,648?GHz, and τ_f =??30?ppm/°C. To compensate the negative τ_f value of this system, TiO₂ powders were introduced. Particularly when 10.wt% TiO₂ was added, good microwave dielectric properties of ε_r=?8.175, Q×f=?21,252?GHz, and τ_f =?1.2?ppm/°C were obtained for the 6.wt% BCB added ZS ceramic sintered at 930?°C for 3?h. Moreover, BCB added ZS-TiO₂ ceramics have a chemical compatibility with silver, which indicate that the BCB added ZS ceramics are promising candidate for LTCC applications.     

Influence of Li2O–B2O3–SiO2 glass on the sintering behavior and microwave dielectric properties of BaO–0.15ZnO–4TiO2 ceramics

This paper reports the investigation of the performance of Li₂O–B₂O₃–SiO₂ (LBS) glass as a sintering aid to lower the sintering temperature of BaO–0.15ZnO–4TiO₂ (BZT) ceramics, as well as the detailed study on the sintering behavior, phase evolution, microstructure and microwave dielectric properties of the resulting BZT ceramics. The addition of LBS glass significantly lowers the sintering temperature of the BZT ceramics from 1150 °C to 875–925 °C. Small amount of LBS glass promotes the densification of BZT ceramic and improves the dielectric properties. However, excessive LBS addition leads to the precipitation of glass phase and growth of abnormal grain, deteriorating the dielectric properties of the BZT ceramic. The BZT ceramic with 5 wt% LBS addition sintered at 900 °C shows excellent microwave dielectric properties: ε_r=27.88, Q×f=14,795 GHz.     

Co2O3 substitution effects on the structure and microwave dielectric properties of low-firing (Zn0.9Mg0.1)TiO3 ceramics

Low-firing (Zn_0.9Mg_0.1)_1?xCo_xTiO₃ (x = 0.02–0.10) (ZMC_xT) microwave dielectric ceramics with high temperature stability were synthesized via conventional solid-state reaction. The influences of Co₂O₃ substitution on the phase composition, microstructure and microwave dielectric properties of ZMC_xT ceramics were discussed. Rietveld refinement results show the coexistence of ZnTiO₃ and ZnB₂O₄ phases at x = 0.02–0.10. (Zn_0.9Mg_0.1)_1?xCo_xTiO₃ ceramic with x = 0.06 (ZMC_0.06T) obtains the best combination microwave dielectric properties of: ε_r = 21.58, Q × f = 53,948 GHz, τ_f = ? 54.38 ppm/°C. For expanding its application in LTCC field, 3 wt% ZnO-B₂O₃-SiO₂ (ZBS) and 9 wt% TiO₂ was added into ZMC_0.06T ceramic, great microwave dielectric properties were achieved at 900 °C for 4 h: ε_r = 26.03, Q × f = 34,830 GHz, τ_f = ? 4 ppm/°C, making the composite ceramic a promising candidate for LTCC industry.     

Crystal structure,microwave dielectric properties and low temperature sintering of (Al0.5Nb0.5)4+ co-substitution for Ti4+ of LiNb0.6Ti0.5O3 ceramics

The phase composition, microstructure, microwave dielectric properties of (Al_0.5Nb_0.5)⁴⁺ co-substitution for Ti site in LiNb_0.6Ti_0.5O₃ ceramics and the low temperature sintering behaviors of Li₂O-B₂O₃-SiO₂ (LBS) glass were systematically discussed. XRD patterns and EDS analysis result confirmed that single phase of Li_1.075Nb_0.625Ti_0.45O₃ solid solution was formed in all component. The increase of dielectric constant (ε_r) is ascribed to the improvement of bulk density. The restricted growth of grain has a negative influence on quality factor (Q×f) value. The τ_f value could be continuously shifted to near zero as the doping content increases. Great microwave dielectric properties were obtained in LiNb_0.6Ti_(0.5-x)(Al_0.5Nb_0.5)_xO₃ ceramics (x?=?0.10) when sintered at 1100?℃ for 2?h: ε_r =?70.34, Q×f =?5144?GHz, τ_f =?4.8?ppm/℃. The sintering aid, LBS glass, can effectively reduce the temperature and remain satisfied microwave performance. Excellent microwave dielectric properties for x?=?0.10 were obtained with 1.0?wt% glass: ε_r =?70.16, Q×f =?4153?GHz (at 4?GHz), τ_f =?-0.65?ppm/℃ when sintered at 925?℃ for 2?h.     

Preparation of dense 0.9Al2O3−0.1TiO2 ceramics with highly improved microwave dielectric properties by a noncontaminated DCC method

In this paper, dense 0.9Al₂O₃ ??0.1TiO₂ ceramics with highly improved microwave dielectric properties were prepared by a noncontaminated direct coagulation casting (DCC) method. The suspension was destabilized and coagulated by consumption of the dispersant without introducing impurity ions. The effect of dispersant content, pH value and solid loading on the rheological properties of 0.9Al₂O₃ ??0.1TiO₂ suspension was investigated. It was found that 0.9Al₂O₃ ??0.1TiO₂ suspension with a high solid loading of 50?vol% and low viscosity of 0.7?Pa?s could be prepared by adding 0.5?wt% TMAOH at the pH in the range of 10–12. The suspension was coagulated by adding 2?vol% GDA when it was treated at 60 ~ 80?°C for 40 ~ 60?min. Compared with dry pressing method, more homogeneous and denser microstructure could be obtained in 0.9A1₂O₃ ??0.1TiO₂ ceramics prepared by DCC via dispersant reaction which were sintered at 1550?°C for 3?h and annealed at 1100?°C for 5?h. The Al₂TiO₅ second phase in 0.9A1₂O₃ ??0.1TiO₂ ceramics prepared by DCC via dispersant reaction could be eliminated more easily by annealing treatment. After annealing treatment, only Al₂O₃ and TiO₂ phases could be detected. Therefore, higher density and much better microwave dielectric properties with ρ?=? 3.81?±?0.02?g/cm³, ε_r =?12.17?±?0.02, Q ×?f =?25,637?±?749?GHz, τ_f =?13.12?±?1.62?ppm/°C were obtained by DCC via dispersant reaction, and the Q ×?f value almost improved by 25%. Without introducing impurity ions, it provides a new insight into preparing complex shaped function ceramics with high properties.     

Effect of Glass Addition on the Microwave Dielectric Properties of CaMgSi2O6 Ceramics

CaMgSi₂O₆ (CMS) ceramics prepared by the solid-state ceramic route have a sintering temperature of 1300°C/2 h. The sintering temperature of CMS was reduced below the melting point of Ag using low-melting LBS and LMZBS glasses. In the case of CMS+15 wt% LMZBS sintered at 900°C/2 h, the dielectric properties obtained were ɛ_r=8.2, Q_u×f=32,000 GHz (10.15 GHz), and τ_f=–48 ppm/°C. The CMS+15 wt% LBS composite, sintered at 925°C/2 h, showed ɛ_r=8, Q_u×f=15,000 GHz (10.17 GHz), and τ_f=–49 ppm/°C. The chemical compatibility of Ag with the ceramic–glass composites was also investigated for low-temperature co-fired ceramic applications.     

Enhanced mechanical properties of 3 Y2O3 stabilized tetragonal ZrO2 incorporating tourmaline particles

The current study reports on the improvement of mechanical properties of 3?mol% Y₂O₃ stabilized tetragonal ZrO₂ (3Y-TZP) by introduction of tourmaline through ball milling and subsequent densification by pressureless sintering at 800, 1200, 1300, 1400?°C. Findings demonstrate that no matter which sintering temperature the 3Y-TZP ceramic containing 2?wt% tourmaline reach a maximum value in flexural strength and fracture toughness as compared to other composite ceramics. As the tourmaline content is 2?wt% and the sintering temperature is 1300?°C, the flexural strength and fracture toughness of the composite ceramics are the highest, increases of 36.2% and 36.6% over plain 3Y-TZP ceramic respectively. The unique microstructure was systematically investigated through X-ray diffraction, scanning electron microscopy, energy dispersive spectrum, and flourier transform-infrared. The strengthening and toughening mechanism of tourmaline in 3Y-TZP ceramic were also discussed.     

Cation distribution of high-performance Mn-substituted ZnGa2O4 microwave dielectric ceramics

In current study, only 5?mol% Mn²⁺ was applied to fabricate high performance microwave dielectric ZnGa₂O₄ ceramics, via a traditional solid state method. The crystal structure, cation distribution and microwave dielectric properties of as-fabricated Mn-substituted ZnGa₂O₄ ceramics were systematically investigated. Mn²⁺-substitution led to a continuous lattice expansion. Raman, EPR and crystal structure refinement analysis suggest that Mn²⁺ preferentially occupies the tetrahedral site and the compounds stay normal-spinel structure. The experimental and theoretical dielectric constant of Zn_1-xMn_xGa₂O₄ ceramics fit well. In all, this magnetic ion, Mn²⁺, could effectively adjust the τ_f value to near zero and double the quality factor from 85,824?GHz to 181,000?GHz of Zn_1-xMn_xGa₂O₄ ceramics at the meantime. Zn_1-xMn_xGa₂O₄ (x?=?0.05) ceramics sintered at 1400?°C for 2?h exhibited excellent microwave dielectric properties, with ε_r =?9.7(@9.85?GHz), Q?×?f?=?181,000?GHz, tanδ?=?5.44?×?10^?5,and τ_f =???12?ppm/°C.     

Enhanced piezoelectric properties and electrical resistivity in W/Cr co-doped CaBi2Nb2O9 high-temperature piezoelectric ceramics

W/Cr co-doped Aurivillius-type CaBi₂Nb_2-x(W_2/3Cr_1/3)_xO₉ (CBN) (x?=?0.025, 0.050, 0.075, 0.100, and 0.150) piezoelectric ceramics were prepared by the conventional solid-state reaction method. The crystal structure, microstructure, dielectric properties, piezoelectric properties, and electrical conductivity of these ceramics were systematically investigated. After optimum W/Cr modification, the CBN ceramics showed both high d₃₃ and T_C. The ceramic with x?=?0.1 showed a remarkably high d₃₃ value of ~15 pC/N along with a high T_C of ~931?°C. Moreover, the ceramic also showed excellent thermal stability evident from the increase in its planar electromechanical coupling factor k_p from 8.14% at room temperature to 11.04% at 600?°C. After annealing at 900?°C for 2?h, the ceramic showed a d₃₃ value of 14?pC/N. Furthermore, at 600?°C, the ceramic also showed a relatively high resistivity of 4.9?×?10⁵ Ω?cm and a low tanδ of 9%. The results demonstrated the potential of the W/Cr co-doped CBN ceramics for high-temperature applications. We also elucidated the mechanism for the enhanced electrical properties of the ceramics.     

Preparation of porous SiC-Al2O3 ceramics via gelcasting utilising a shrinkable pore-forming agent and oxidised coarse-grained SiC

By utilising soaked millet as a shrinkable pore-forming agent, porous silicon carbide-alumina (SiC-Al₂O₃) ceramics were prepared via gelcasting. The fabrication of SiC-Al₂O₃ ceramics based on oxidised and unoxidised coarse-grained SiC was also studied. The water swelling, drying shrinkage, and low-temperature carbonisation of the millet were investigated. We found that the shrinkage of the soaked millet was greater than that of gel body during drying, which left large gaps that prevented shrinkage stresses from destroying the gel body. Low-temperature carbonisation of the millet should be performed slowly at 220–240?°C because its expansion rate increases to 45% at 250?°C, resulting in the cracking of samples. At a constant sintering temperature, the flexural strength of the SiC-Al₂O₃ ceramics prepared with SiC powders oxidised at 1000?°C was the highest, indicating that oxidised powders can successfully decrease the required sintering temperature and improve the flexural strength of composite ceramics. Based on our optimised process, porous SiC-Al₂O₃ ceramics were sintered at 1500?°C for 2?h. When their skeletons were fully developed, their pore sizes were in the range of 1.5–2?mm. Their porosity and flexural strength were 60.2–65.1% and 8.3–10.5?MPa, respectively.     

Phase composition,Raman spectra,infrared spectra and dielectric properties of Li2MgTi1-x(Mg1/3Nb2/3)xO4 ceramics at microwave frequency

The Li₂MgTi_1-x(Mg_1/3Nb_2/3)_xO₄ (0?≤x?≤?0.5) ceramics were prepared by the conventional solid-state method. The relationship among phase composition, substitution amount and microwave dielectric properties of the ceramics was symmetrically investigated. All the samples possess the rock salt structure with the space group of Fm-3m. As the x value increases from 0 to 0.5, the dielectric constant linearly decreases from 16.75 to 15.56, which can be explained by the variation of Raman spectra and infrared spectra. The Q·f value shows an upward tendency in the range of 0?≤x?≤?0.3, but it then decreases when x?>?0.3. In addition, the temperature coefficient of resonant frequency (τ_f) is shifted toward zero with the increasing (Mg_1/3Nb_2/3)⁴⁺ addition. By comparison, the Li₂MgTi_0.7(Mg_1/3Nb_2/3)_0.3O₄ ceramics sintered at 1400?°C can achieve an excellent combination of microwave dielectric properties: ε_r=?16.19, Q·f =?160,000?GHz and τ_f =??3.14?ppm/°C.     

Effect of Bi2O3 additives on sintering and microwave dielectric behavior of La(Mg0.5Ti0.5)O3 ceramics

Bi₂O₃ was selected as liquid phase sintering aid to lower the sintering temperature of La(Mg_0.5Ti_0.5)O₃ ceramics. The sintering temperature of La(Mg_0.5Ti_0.5)O₃ ceramics is generally high, about 1600 °C. However, the sintering temperature was significantly lowered about 275 °C from 1600 °C to 1325 °C by incorporating in 15 mol% Bi₂O₃ and revealed the optimum microwave dielectric properties of dielectric constant (?_r) value of 40.1, a quality factor (Q × f) value of 60,231 GHz, and the temperature coefficient (τ_f) value of 70.1 ppm/°C. During all addition ranges, the relative dielectric constants (?_r) were different and ranged from 32.0 to 41.9, the quality factors (Q × f) were distributed in the range of 928–60,231 GHz, and the temperature coefficient (τ_f) varies from 0.3 ppm/°C to 70.3 ppm/°C. Noticeably, a nearly zero τ_f can be found for doping 5 mol% Bi₂O₃ sintering at 1325 °C. It implies that nearly zero τ_f can be achieved by appropriately adjusting the amount of Bi₂O₃ additions and sintering temperature for La(Mg_0.5Ti_0.5)O₃ ceramics.     

Synthesis of a low-firing BaSi2O5 microwave dielectric ceramics with low dielectric constant

In this study, BaSi₂O₅ ceramics with an orthorhombic structure were synthesized by using a traditional solid-state method at a low temperature by doping with Li₂O–B₂O₃–CaO–CuO (LBCC) glass. The phase composition, mechanism of low-temperature sintering, microwave dielectric properties, and changes in the mesophase during the heating of low-temperature sintered BaSi₂O₅ ceramics were examined by performing an X-ray diffraction analysis. A compact matrix of BaSi₂O₅ can be wetted by the liquid phase of the formed LBCC glass. Therefore, LBCC glass with different doping percentages can effectively reduce the sintering temperature of BaSi₂O₅. The microwave dielectric properties of BaSi₂O₅ ceramics sintered at 900 °C at 4 wt% of LBCC glass were determined: ε_r = 7.32, Q × f = 19,002 GHz, and τ_f = ?35.8 ppm/°C. The chemical compatibility of the samples with Ag was studied at 4 wt% doping with LBCC glass, and the samples were fired for 4 h at 900 °C.     

Low-temperature sintering and microwave dielectric properties of CaSnxSiO(3+2x)-based positive τf compensator

The sinterability, phase compositions, and microwave dielectric properties of LiF-doped nonstoichiometric CaSn_xSiO_(3+2x) ceramics prepared by the solid-state reaction were investigated. LiF addition effectively reduced the sintering temperature of CaSn_xSiO_(3+2x) ceramics and inhibited the volatilization of Sn. A pure monoclinic CaSnSiO₅ phase was achieved in the 1.0?wt% LiF-doped CaSn_0.94SiO_4.88 ceramics sintered at 1175?°C, which exhibited good microwave dielectric properties of ε_r =?11.6, Q?×?f?=?34000?GHz, and τ_f =?+73.2?ppm/°C. The positive τ_f value was an atypical and important phenomenon for low-permittivity microwave dielectric ceramics, which could be a promising τ_f compensator.     

Effect of sintering temperature and Ho2O3 on the properties of TiO2-based varistors

In this study, a series of TiO₂-based ceramics doped with different contents of Ho₂O₃ in the range of 0–0.6?mol% are prepared by means of a conventional solid-state reaction method. Phase composition, microstructure and element distribution are studied by use of X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS) separately. The influence of sintering temperature and Ho₂O₃ on the properties of samples is explored. The results show that the breakdown voltage decreases continuously while both the nonlinear coefficient and the relative dielectric constant ascend firstly and then descend with the sintering temperature increasing. Meanwhile, the relative dielectric constant and nonlinear coefficient of samples firstly ascend and then descend with the increasing of Ho₂O₃. Although the minimum breakdown voltage (3.3?V/mm) is obtained when sample is sintered at 1450?°C, the sample doped with 0.45?mol% Ho₂O₃ sintered at 1400?°C exhibits high comprehensive electrical properties, with breakdown voltage of 6?V/mm, the nonlinear coefficient of 5.5 and the relative dielectric constant of 1.88?×?10⁵.     

Microwave dielectric ceramics in (Mg1/3Sb2/3)O2-ZrO2-TiO2 system with near zero τf and low loss in a very wide range

A series of (ZrTi)_1-x(Mg_1/3Sb_2/3)_2xO₄ (0.04?≤?x?≤?0.36) ceramics were successfully synthesized through the conventional solid-state processing. Appropriate content of CuO was added as sintering aids to promote the density of ceramics. The XRD analysis revealed that the main crystalline phase of ceramics sintered at optimal temperature belonged to α-PbO₂-type structure. Raman spectroscopy and far infrared reflectivity (FIR) spectra were employed to study the phonon modes of ceramics, which explained the relationship between microwave dielectric properties and structure. It is interesting that the τ_f are near-zero (+6.6 ~ ?4.6?ppm/°C) and meanwhile the Q×f are relatively high (29,000–41,800?GHz) for samples with x in a very wide range of 0.10–0.36. In this range, their dielectric constants (ε_r) can be adjustable from 35.4 to 24.4. The results demonstrated this ceramic system is a potential candidate for microwave dielectric applications requiring an adjustable dielectric constants and near zero τ_f.     

Fabrication,microstructure and spectroscopic properties of Yb:Lu2O3 transparent ceramics from co-precipitated nanopowders

Ytterbium doped lutetium oxide (Yb:Lu₂O₃) transparent ceramics were fabricated by vacuum sintering combined with hot isostatic pressing (HIP) of the powders synthesized by the co-precipitation method. The effects of calcination temperature on the composition and morphology of the powders were investigated. Fine and well dispersed 5?at% Yb:Lu₂O₃ powders with the mean particle size of 67?nm were obtained when calcined at 1100?°C for 4?h. Using the synthesized powders as starting material, we fabricated 5?at% Yb:Lu₂O₃ ceramics by pre-sintering at different temperatures combined with HIP post-treatment. The influence of pre-sintering temperature on the densities, microstructures and optical quality of the 5?at% Yb:Lu₂O₃ ceramics was studied. The ceramic sample pre-sintered at 1500?°C for 2?h with HIP post-treating at 1700?°C for 8?h has the highest in-line transmittance of 78.2% at 1100?nm and the average grain size of 2.6?µm. In addition, the absorption and emission cross sections of the 5?at% Yb:Lu₂O₃ ceramics were also calculated.     

Crystal structure,Raman spectra and microwave dielectric properties of Li2Mg3Ti1-x(Mg1/3Nb2/3)xO6 (0 ≤x ≤ 0.25) ceramics

Li₂Mg₃Ti_1-X(Mg_1/3Nb_2/3)_XO₆ (0?≤x?≤?0.25) ceramics were prepared by a conventional solid-state reaction process. Their crystal structures, sintering characteristics, Raman spectra and microwave dielectric properties were then investigated. XRD patterns of the sintered samples indicated that all compositions showed a single phase and the rock-salt structure. As the (Mg_1/3Nb_2/3)⁴⁺ contents increase, the variations of ε_r values showed a downward trend, which could be explained by the changes of polarizabilities and the shift of Raman vibration modes. Q·f values initially increased to a maximum value and then decreased with increasing of x values. In addition, τ_f values decreased almost linearly with the x values, which significantly correlated with the thermal expansion coefficient. Excellent combined microwave dielectric properties with ε_r =?14.79, Q·f?=?204,900?GHz and τ_f =??18.43?ppm/°C were obtained for Li₂Mg₃Ti_.95(Mg_1/3Nb_2/3)_.05O₆ ceramic sintered at 1550?°C.