Thermal Transport in 2D Semiconductors—Considerations for Device Applications

The discovery of graphene has stimulated the search for and investigations into other 2D materials because of the rich physics and unusual properties exhibited by many of these layered materials. Transition metal dichalcogenides (TMDs), black phosphorus, and SnSe among many others, have emerged to show highly tunable physical and chemical properties that can be exploited in a whole host of promising applications. Alongside the novel electronic and optical properties of such 2D semiconductors, their thermal transport properties have also attracted substantial attention. Here, a comprehensive review of the unique thermal transport properties of various emerging 2D semiconductors is provided, including TMDs, black‐ and blue‐phosphorene among others, and the different mechanisms underlying their thermal conductivity characteristics. The focus is placed on the phonon‐related phenomena and issues encountered in various applications based on 2D semiconductor materials and their heterostructures, including thermoelectric power generation and electron–phonon coupling effect in photoelectric and thermal transistor devices. A thorough understanding of phonon transport physics in 2D semiconductor materials to inform thermal management of next‐generation nanoelectronic devices is comprehensively presented along with strategies for controlling heat energy transport and conversion.     

Interfacial Polar‐Bonding‐Induced Multifunctionality of Nano‐Silicon in Mesoporous Silica

The optoelectronic response of a material governs its suitability for a wide range of applications, from photon detection to photovoltaic conversion. To conquer the material limitations and achieve improved optoelectronic responses, nanotechnology has been employed to arrange subunits with specific size‐dependent quantum mechanical properties in a hierarchically organized structure. However, building a functional optoelectronic system from nano‐objects remains a formidable challenge. In this paper, the fabrication of a new artificially engineered optoelectronic material by the preferential growth of silicon nanocrystals on the bottom of the pore‐channels of mesoporous silica is reported. The nanocrystals form highly stable interface structures bonded on one side; these structure show strong electron–phonon coupling and a ferroelectric‐like hysteretic switching property. A new class of multifunctional materials is realized by invoking a concept that employs semiconductor nanocrystals for optical sensing and utilizes interfacial polar layers to facilitate carrier transport and emulate ferroelectric‐like switching.     

近场光学显微镜及其应用

近场光学显微镜是一种新型超高空间分辨率的光学仪器，它在很多领域都有广泛应用。本文描述了近场光学显微镜的成像原理及结构部件，简要介绍了近场光学显微镜在高分辨率光学成像、高密度储存存储以及近场光谱等领域中的应用。     

Nanometer‐Sized Copper Sulfide Hollow Spheres with Strong Optical‐Limiting Properties

CuS semiconductor nanometer‐sized hollow spheres are successfully synthesized by using a soft‐template method. A possible growth mechanism is proposed. The linear optical property of the CuS hollow spheres is examined by means of photoluminescence spectroscopy at room temperature. The optical‐limiting (OL) property of these nanostructures is characterized by using a nanosecond Q‐switched YAG laser and an optical parametric oscillator pumped with Surelite‐III. A strong OL response is detected for the CuS hollow spheres in both visible and near infrared (NIR) spectral ranges, which makes these promising materials for applications such as the protection of human eyes or as optical sensors for high‐power laser irradiation. The OL mechanism of the CuS hollow‐sphere nanostructure may be the combination of free‐carrier absorption (FCA) and nonlinear scattering.     

Atomic‐Scale Spectroscopic Imaging of the Extreme‐UV Optical Response of B‐ and N‐Doped Graphene

Substitutional doping of graphene by impurity atoms such as boron and nitrogen, followed by atom‐by‐atom manipulation via scanning transmission electron microscopy, can allow for accurate tailoring of its electronic structure, plasmonic response, and even the creation of single atom devices. Beyond the identification of individual dopant atoms by means of “Z contrast” imaging, spectroscopic characterization is needed to understand the modifications induced in the electronic structure and plasmonic response. Here, atomic scale spectroscopic imaging in the extreme UV‐frequency band is demonstrated. Characteristic and energy‐loss‐dependent contrast changes centered on individual dopant atoms are highlighted. These effects are attributed to local dopant‐induced modifications of the electronic structure and are shown to be in excellent agreement with calculations of the associated densities of states.     

High‐Resolution Near‐Field Optical Investigation of Crystalline Domains in Oligomeric PQT‐12 Thin Films

The structure and morphology on different length scales dictate both the electrical and optical properties of organic semiconductor thin films. Using a combination of spectroscopic methods, including scanning near‐field optical microscopy, we study the domain structure and packing quality of highly crystalline thin films of oligomeric PQT‐12 with 100 nanometer spatial resolution. The pronounced optical anisotropy of these layers measured by polarized light microscopy facilitates the identification of regions with uniform molecular orientation. We find that a hierarchical order on three different length scales exists in these layers, made up of distinct well‐ordered dichroic areas at the ten‐micrometer‐scale, which are sub‐divided into domains with different molecular in‐plane orientation. These serve as a template for the formation of smaller needle‐like crystallites at the layer surface. A high degree of crystalline order is believed to be the cause of the rather high field‐effect mobility of these layers of 10^?3 cm² V^?1 s^?1, whereas it is limited by the presence of domain boundaries at macroscopic distances.     

Probing Local Electronic Transitions in Organic Semiconductors through Energy‐Loss Spectrum Imaging in the Transmission Electron Microscope

Improving the performance of organic electronic devices depends on exploiting the complex nanostructures formed in the active layer. Current imaging methods based on transmission electron microscopy provide limited chemical sensitivity, and thus the application to materials with compositionally similar phases or complicated multicomponent systems is challenging. Here, it is demonstrated that monochromated transmission electron microscopes can generate contrast in organic thin films based on differences in the valence electronic structure at energy losses below 10 eV. In this energy range, electronic fingerprints corresponding to interband excitations in organic semiconductors can be utilized to generate significant spectral contrast between phases. Based on differences in chemical bonding of organic materials, high‐contrast images are thus obtained revealing the phase separation in polymer/fullerene mixtures. By applying principal component analysis to the spectroscopic image series, further details about phase compositions and local electronic transitions in the active layer of organic semiconductor mixtures can be explored.     

Phonon Scattering and Thermal Conductivity in p‐Type Nanostructured PbTe‐BaTe Bulk Thermoelectric Materials

Transmission electron microscopy studies show that a PbTe‐BaTe bulk thermoelectric system represents the coexistence of solid solution and nanoscale BaTe precipitates. The observed significant reduction in the thermal conductivity is attributed to the enhanced phonon scattering by the combination of substitutional point defects in the solid solution and the presence of high spatial density of nanoscale precipitates. In order to differentiate the role of nanoscale precipitates and point defects in reducing lattice thermal conductivity, a modified Callaway model is proposed, which highlights the contribution of point defect scattering due to solid solution in addition to that of other relevant microstructural constituents. Calculations indicate that in addition to a 60% reduction in lattice thermal conductivity by nanostructures, point defects are responsible for about 20% more reduction and the remaining reduction is contributed by the collective of dislocation and strain scattering. These results underscore the need for tailoring integrated length‐scales for enhanced heat‐carrying phonon scattering in high performance thermoelectrics.     

Scanning near-field optical microscopy analyses of electronic devices

We discuss the usefulness of scanning near-field optical microscopy (SNOM) techniques for the optical failure analysis of electronic devices with a lateral resolution well below the diffraction limit. By imaging dielectric contrasts, defects within metallization layers can be located while optical near-field induced current/conductivity (ONIC/ONICond) analyses allow the characterization of device internal electronical properties with less than 50 nm resolution.     

Through‐the‐glass spectroscopic ellipsometry for analysis of CdTe thin‐film solar cells in the superstrate configuration

Polycrystalline CdS/CdTe thin‐film solar cells in the superstrate configuration have been studied by spectroscopic ellipsometry (SE) using glass side illumination. In this measurement method, the first reflection from the ambient/glass interface is rejected, whereas the second reflection from the glass/film‐stack interface is collected; higher order reflections are also rejected. The SE analysis incorporates parameterized dielectric functions ε for solar cell component materials obtained by in situ and variable‐angle SE. In the SE analysis of the complete cells, a step‐wise procedure ranks the fitting parameters, including thicknesses and those defining the spectra in ε, according to their ability to reduce the root‐mean‐square deviation between the simulated and measured SE spectra. The best fit thicknesses from this analysis are found to be consistent with electron microscopy. Based on the SE results, the solar cell quantum efficiency (QE) can be simulated without any free parameters, and comparisons with measured QE enable optical model refinements as well as identification of optical and electronic losses. These capabilities have wide applications in photovoltaic module mapping and in‐line monitoring. Copyright © 2016 John Wiley & Sons, Ltd.     

Excitonic and Vibrational Properties of Single‐Walled Semiconducting Carbon Nanotubes

We review quantum‐chemical studies of the excited‐state electronic structure of finite‐size semiconducting single‐walled carbon nanotubes (SWCNTs) using methodologies previously successfully applied to describe conjugated polymers and other organic molecular materials. The results of our simulations are in quantitative agreement with available spectroscopic data and show intricate details of excited‐state properties and photoinduced vibrational dynamics in carbon nanotubes. We analyze in detail the nature of strongly bound first and second excitons in SWCNTs for a number of different tubes, emphasizing emerging size‐scaling laws. Characteristic delocalization properties of excited states are identified by the underlying photoinduced changes in charge densities and bond orders. Due to the rigid structure, exciton–phonon coupling is much weaker in SWCNTs compared to typical molecular materials. Yet we find that, in the ground state, a SWCNT's surface experiences the corrugation associated with electron–phonon interactions. Vibrational relaxation following photoexcitation reduces this corrugation, leading to a local distortion of the tube surface, which is similar to the formation of self‐trapped excitons in conjugated polymers. The calculated associated Stokes shift increases with enlargement of the tube diameters. Such exciton vibrational phenomena are possible to detect experimentally, allowing for better understanding of photoinduced electronic dynamics in nanotube materials.     

Free carrier absorption and lattice vibrational modes in bulk ZnO

The electronic properties of semiconductors are highly dependent on carrier scattering mechanisms determined by crystalline structure, band structure, and defects in the material. Experimental characteristics of lattice vibrational modes and free carrier absorption in single-crystal ZnO samples obtained from different sources are presented in this work to provide a further understanding of carrier scattering processes pertaining to electronic properties. Infrared absorption measurements indicate strong absorption peaks due to a combination of optical and nonpolar phonon modes in the 9–13 μm spectral region. The Raman spectra obtained for these samples similarly reveal the presence of these phonon modes. Infrared absorption measurements also demonstrate free carrier absorption in the 3–9 μm spectral region for higher conductivity samples, where a λ^m dependence is observed with m=2.7–3, indicating both longitudinal optical phonon scattering and ionized impurity scattering. From these results, we show that infrared absorption can be used as a routine nondestructive technique to determine the material characteristics and quality of bulk ZnO.     

Effects of Defects on the Temperature‐Dependent Thermal Conductivity of Suspended Monolayer Molybdenum Disulfide Grown by Chemical Vapor Deposition

It is understood that defects of the atomic arrangement of the lattice in 2D molybdenum disulfide (MoS₂) grown by chemical vapor deposition (CVD) can have a profound effect on the electronic and optical properties. Beyond these it is a major prerequisite to also understand the fundamental effect of such defects on phonon transport, to guarantee the successful integration of MoS₂ into the solid‐state devices. A comprehensive joint experiment‐theory investigation to explore the effect of lattice defects on the thermal transport of the suspended MoS₂ monolayer grown by CVD is presented. The measured room temperature thermal conductivity values are 30 ± 3.3 and 35.5 ± 3 W m^?1 K^?1 for two samples, which are more than two times smaller than that of their exfoliated counterpart. High‐resolution transmission electron microscopy shows that these CVD‐grown samples are polycrystalline in nature with low angle grain boundaries, which is primarily responsible for their reduced thermal conductivity. Higher degree of polycrystallinity and aging effects also result in smoother temperature dependency of thermal conductivity (κ) at temperatures below 100 K. First‐principles lattice dynamics simulations are carried out to understand the role of defects such as isotopes, vacancies, and grain boundaries on the phonon scattering rates of our CVD‐grown samples.     

Liquid‐Crystalline Perylene Diester Polymers with Tunable Charge‐Carrier Mobility

New classes of liquid‐crystalline semiconductor polymers based on perylene diester benzimidazole and perylene diester imide mesogens are reported. Two highly soluble side‐chain polymers, poly(perylene diester benzimidazole acrylate) (PPDB) and poly(perylene diester imide acrylate) (PPDI) are synthesized by nitroxide‐mediated radical polymerization (NMRP). PPDB shows n‐type semiconductor performance with electron mobilities of 3.2 × 10^?4 cm² V^?1 s^?1 obtained in a diode configuration by fitting the space‐charge‐limited currents (SCLC) according to the Mott–Gurney equation. Interestingly, PPDI performs preferentially as a p‐type material with a hole mobility of 1.5 × 10^?4 cm² V^?1 s^?1, which is attributed to the less electron‐deficient perylene core of PPDI compared to PPDB. Optical properties are investigated by UV‐vis and fluorescence spectroscopy. The extended π‐conjugation system due to the benzimidazole unit of PPDB leads to a considerably broader absorption in the visible region compared to PPDI. HOMO and LUMO levels of the polymers are also determined by cyclic voltammetry; the resulting energy band‐gaps are 1.86 eV for PPDB and 2.16 eV for PPDI. Thermal behavior and liquid crystallinity are studied by differential scanning calorimetry, polarized optical microscopy, and X‐ray diffraction measurements. The results indicate liquid‐crystalline order of the polymers over a broad temperature range. These thermal, electrical, and optical properties make the perylene side‐chain polymers attractive materials for organic photovoltaics.     

Localized Laser‐Based Photohydrothermal Synthesis of Functionalized Metal‐Oxides

We discuss the rapid in situ hydrothermal synthesis of metal oxide materials based on the photothermal superheating of light‐absorbing metal layers for simple and facile on‐demand placement of semiconductor materials with micrometer‐scale lateral resolution. Localized heating from pulsed and focused laser illumination enables ultrafast growth of metal oxide materials with high spatiotemporal precision in aqueous precursor solution. Among many possible electronic and optoelectronic applications, the proposed method can be used for laser‐based in situ real‐time soldering of separated metal structures and electrodes with functionalized semiconductor materials. Resistive electrical interconnections of metal strip lines as well as sensitive UV detection using photohydrothermally grown metal oxide bumps are experimentally demonstrated.     

具有高品质因数的剪切力扫描近场光学显微镜在液体中的生物成像

基于剪切力的探针-试样间距控制扫描近场光学显微镜用于生物材料在液体中的成像比在空气中难得多。液体的黏性阻尼和软的试样表面要求更高的力检测灵敏度。最近我们试验成功的压电双晶片剪切力检测器结合力反馈技术,可以大幅度提高双晶片的机械谐振品质因数,从而改善在粘滞液体中力检测灵敏度。当双晶片在它的某一本征频率下被激励,通过调节一个适当的反馈力,它的机械谐振品质因数在水中可以从40增强到10^3,因此成像灵敏度获得显著改善。上述力检测技术被用于一些生物试样在液体环境下的拓扑和近场光学成像。所得到的力、相位和光学图像显示了高的成像质量和分辨率。实验结果证明上述装置尤其适宜于近场光学显微镜在生物领域的应用。     

Zinc Oxide Nanoparticles with Defects

Zinc oxide in the form of nanoscale materials can be regarded as one of the most important semiconductor oxides at present. However, the question of how chemical defects influence the properties of nanoscale zinc oxide materials has seldom been addressed. In this paper, we report on the introduction of defects into nanoscale ZnO, their comprehensive analysis using a combination of techniques (powder X‐ray diffraction (PXRD), X‐ray absorption spectroscopy/extended X‐ray absorption fine structure (XAS/EXAFS), electron paramagnetic resonance (EPR), magic‐angle spinning nuclear magnetic resonance (MAS‐NMR), Fourier‐transform infrared (FTIR), UV‐vis, and photoluminescence (PL) spectroscopies coupled with ab‐initio calculations), and the investigation of correlations between the different types of defects. It is seen that defect‐rich zinc oxide can be obtained under kinetically controlled conditions of ZnO formation. This is realized by the thermolysis of molecular, organometallic precursors in which ZnO is pre‐organized on a molecular scale. It is seen that these precursors form ZnO at low temperatures far from thermodynamic equilibrium. The resulting nanocrystalline ZnO is rich in defects. Depending on conditions, ZnO of high microstructural strain, high content of oxygen vacancies, and particular content of heteroatom impurities can be obtained. It is shown how the mentioned defects influence the electronic properties of the semiconductor nanoparticles.     

Broadband,High‐Speed,and Large‐Amplitude Dynamic Optical Switching with Yttrium‐Doped Cadmium Oxide

Transparent conducting oxides, such as doped indium oxide, zinc oxide, and cadmium oxide (CdO), have recently attracted attention as tailorable materials for applications in nanophotonic and plasmonic devices such as low‐loss modulators and all‐optical switches due to their tunable optical properties, fast optical response, and low losses. In this work, optically induced extraordinarily large reflection changes (up to 135%) are demonstrated in bulk CdO films in the mid‐infrared wavelength range close to the epsilon near zero (ENZ) point. To develop a better understanding of how doping level affects the static and dynamic optical properties of CdO, the evolution of the optical properties with yttrium (Y) doping is investigated. An increase in the metallicity and a blueshift of the ENZ point with increasing Y‐concentrations is observed. Broadband all‐optical switching from near‐infrared to mid‐infrared wavelengths is demonstrated. The major photoexcited carrier relaxation mechanisms in CdO are identified and it is shown that the relaxation times can be significantly reduced by increasing the dopant concentration in the film. This work could pave the way to practical dynamic and passive optical and plasmonic devices with doped CdO spanning wavelengths from the ultraviolet to the mid‐infrared region.     

Ultrafast Plasmonic Hot Electron Transfer in Au Nanoantenna/MoS2 Heterostructures

2D transition metal dichalcogenides are becoming attractive materials for novel photoelectric and photovoltaic applications due to their excellent optoelectric properties and accessible optical bandgap in the near‐infrared to visible range. Devices utilizing 2D materials integrated with metal nanostructures have recently emerged as efficient schemes for hot electron‐based photodetection. Metal‐semiconductor heterostructures with low cost, simple procedure, and fast response time are crucial for the practical applications of optoelectric devices. In this paper, template‐based sputtering method is used first to fabricate Au nanoantenna (NA)/MoS₂ heterostructures with low cost, simple preparation, broad spectral response, and fast response time. Through the measurement of femtosecond pump‐probe spectroscopy, it is demonstrated that plasmon‐induced hot electron transfer takes place in the Au NA/MoS₂ heterostructure on the order of 200 fs with an injected electron density of about 5.6 × 10¹² cm^?2. Moreover, the pump‐power‐dependent photoluminescence spectra confirm that the exciton energy of MoS₂ can be enhanced, coupled, and reradiated by the Au NA. Such ultrafast plasmon‐induced hot electron transfer in the metal‐semiconductor heterostructure can enable novel 2D devices for light harvesting and photoelectric conversion.     

Cover Picture: Excitonic and Vibrational Properties of Single‐Walled Semiconducting Carbon Nanotubes (Adv. Funct. Mater. 17/2007)

The cover picture illustrates excited state dynamics of semiconducting single‐walled carbon nanotubes studied theoretically. Sergai Tretiak and Svetlana Kilina report on p. 3405 that absorption of the light quantum leads to spatially delocalized photoexcitation, which can be described as tightly bound excitons and characterized by 2D plots of transition density. The photoexcitation is coupled to the vibrational degrees of freedom, leading to complex exciton‐phonon dynamics, which can be monitored experimentally using ultrafast spectroscopic probes. We review quantum‐chemical studies of the excited‐state electronic structure of finite‐size semiconducting single‐walled carbon nanotubes (SWCNTs) using methodologies previously successfully applied to describe conjugated polymers and other organic molecular materials. The results of our simulations are in quantitative agreement with available spectroscopic data and show intricate details of excited‐state properties and photoinduced vibrational dynamics in carbon nanotubes. We analyze in detail the nature of strongly bound first and second excitons in SWCNTs for a number of different tubes, emphasizing emerging size‐scaling laws. Characteristic delocalization properties of excited states are identified by the underlying photoinduced changes in charge densities and bond orders. Due to the rigid structure, exciton–phonon coupling is much weaker in SWCNTs compared to typical molecular materials. Yet we find that, in the ground state, a SWCNT's surface experiences the corrugation associated with electron–phonon interactions. Vibrational relaxation following photoexcitation reduces this corrugation, leading to a local distortion of the tube surface, which is similar to the formation of self‐trapped excitons in conjugated polymers. The calculated associated Stokes shift increases with enlargement of the tube diameters. Such exciton vibrational phenomena are possible to detect experimentally, allowing for better understanding of photoinduced electronic dynamics in nanotube materials.