VLSI中CVD二氧化硅膜的淀积

介绍了大规模集成电路中两种ＣＶＤ二氧化硅膜的淀积，并对这两种二氧化硅膜的淀积方式及其性能进行了比较。指出ＴＥＯＳ淀积方式，是今后集成电路中ＳｉＯ２淀积的主流工艺。     

用离子束辅助淀积多层薄膜技术合成Co—Si化合物薄膜的研究

本文通过离子束辅助淀积与真空淀积多层膜技术相结合，淀积合成Ｃｏ－Ｓｉ薄膜，ＲＢＳ和ＸＲＤ分析表明：在无离子束轰击条件下利用电子束蒸镀Ｃｏ／Ｓｉ多层膜，得到的是由ａ－Ｃｏ与非晶Ｓｉ组成的薄膜，薄膜与Ｓｉ（１１１）基底及多层膜各层之间没有明显的相互扩散，而用复合方法镀制的薄膜与Ｓｉ基底以及各层之间都产生了混合和扩散，并已有Ｃｏ２Ｓｉ，ＣｏＳｉ相生成，７５０℃退火３０分钟后，无轰击样品只在硅基底与薄膜界     

用离子束辅助淀积多层薄膜技术合成Co－Si化合物薄膜的研究

本文通过离子束辅助淀积（ＩＢＡＤ）与真空淀积多层膜技术相结合，淀积合成Ｃｏ－Ｓｉ薄膜，ＲＢＳ和ＸＲＤ分析表明：在无离子束轰击条件下利用电子束蒸镀Ｃｏ／Ｓｉ多层膜，得到的是由α－Ｃｏ与非晶Ｓｉ组成的薄膜．薄膜与Ｓｉ（１１１）基底及多层膜各层之间没有明显的相互扩散，而用复合方法镀制的薄膜与Ｓｉ基底以及各层之间都产生了混合和扩散，并已有ＣＯ２Ｓｉ、ＣｏＳｉ相生成．７５０℃退火３０分钟后，无轰击样品只在硅基底与薄膜界面处产生明显的反应和扩散，而复合方法该制的样品则形成均匀的ＣｏＳｉ２薄膜。     

低温PECVD法制备半导体的复合钝化膜

本文主要是以ＳｉＨ４、Ｎ２Ｏ和Ｓｉ３Ｈ４、ＮＨ３、Ｎ２作为气体源，在平行板电容耦合式淀积设备上，采用等离子增强化学气相淀积（ＰＥＣＶＤ）法制备ＳｉＯ２－Ｓｉ３Ｎ４复合钝化膜。     

Si—Si3N4—SiO2钝化工艺及其应用

介绍了ＬＰＣＶＤ法Ｓｉ３Ｎ４膜与ＰＥＣＶＤ法ＳｉＯ２膜的淀积工艺，以及Ｓｉ－Ｓｉ３Ｎ４－ＳｉＯ２钝化工艺在高可靠大电流开关二极管中的应用，并指出了工艺的适用范围。     

PCVD技术在InSb CID焦平面阵列的应用

本文系统描述了用ＰＣＶＤ（光化学汽相淀积）技术在ＩｎＳｂ衬底上沉积ＳｉＯｘＮｙ介质膜的工艺过程。对ＳｉＯｘＮｙ膜进行测试分析，并用它作介质膜，钝化膜，作出了性能较好的ＩｎＳｂ ＣＩＤ焦平面器件。     

氩离子轰击对射频溅射法制备的a-SiC∶H膜退火形成6H-SiC的影响

本文对射频溅射法淀积的ａ－ＳｉＣ∶Ｈ膜热退火形成６Ｈ－ＳｉＣ相进行了研究．我们采用红外透射谱、喇曼背散射谱和Ｘ光衍射谱来研究退火形成６Ｈ－ＳｉＣ的过程．在较高的射频功率下淀积的ａ－ＳｉＣ∶Ｈ膜经８００℃６０分钟等时退火后转变为６Ｈ－ＳｉＣ相，该温度低于在低功率下制备的ａ－ＳｉＣ∶Ｈ形成６Ｈ－ＳｉＣ的温度（１０００℃）．高功率可导致６Ｈ－ＳｉＣ形成温度的降低与膜中硅及石墨团簇的消失，同时高能量的氩离子轰击可使膜中氢含量减少及各组分均相．通过改变射频功率，本文研究了氩离子轰击对ａ－ＳｉＣ∶Ｈ膜及形成６Ｈ－Ｓｉ     

氢化非晶碳膜与硅的界面特性

利用直流辉光放电分解碳氢气体来淀积ａ－Ｃ：Ｈ膜，通过测量Ａｌ／ａ－Ｃ：Ｈ／ＳｉＭＩＳ结构的高频Ｃ－Ｖ曲线讨论了ａ－Ｃ：Ｈ／Ｓｉ界面的电子特性，结果表明ａ－Ｃ：Ｈ／Ｓｉ膜有可能用作半导体器件的表面钝化膜。     

DLTS技术研究富氮SiOxNy薄介质膜的电学特性

采用深能级瞬态谱技术（ＤＬＴＳ）,测试了等离子体增强化学汽相淀积（ＰＥＣＶＤ）法低温制备的富氮的ＳｉＯｘＮｙ栅介质膜的电学特性（界面态密度、俘获截面随禁带中能量的变化关系）,结果表明,采用合适的ＰＥＣＶＤ低温工艺淀积ＳｉＯｘＮｙ膜可以制备性质优良的栅介质膜。     

一种新型氮化硅氢离子敏器件及其特性

新型氮化硅氢离子敏器件采用ＰＥＣＶＤ法淀积ＳｉＮｘＨｙ膜同时作敏感膜与二次钝化保护膜。改善了器件的密封性能；敏感灵敏度β＝５６￣６０ｍＶ／ｐＨ，比用ＬＰＣＶＤ法淀积的Ｓｉ３Ｎ４膜提高１４％，β的线性度有明显改善；响应时间也缩短一倍。     

Dependence of surface morphology of CVD diamond films on deposition conditions

ＤｅｐｅｎｄｅｎｃｅｏｆｓｕｒｆａｃｅｍｏｒｐｈｏｌｏｇｙｏｆＣＶＤｄｉａｍｏｎｄｆｉｌｍｓｏｎｄｅｐｏｓｉｔｉｏｎｃｏｎｄｉｔｉｏｎｓＹＡＮＧＧｕｏｗｅｉ（Ｄｅｐｔ．ｏｆＰｈｙｓ．，ＸｉａｎｇｔａｎＵｕｉｖｅｒｓｉｔｙ，Ｘｉａｎｇｔａｎ４１１１０５...     

Dependence of surface morphology of CVD diamond films on deposition conditions

The diamond films have been deposited by the hot filament CVD method on molybdenum substrates from the mixture reactant gas of acetone and hy-drogen.The surface morphologies of the obtained diamond films under various de-position conditions have been observed by scanning electron microscope (SEM).The experimental results strongly indicate that the surface morphologies of the re-sulting films have closely related to the deposition conditions,i.e.,reaction pres-sure.For molybdenum substrates,under the lower reaction pressure the surface morphologies of the grains comprising the resulting films mainly display the small single crystal cubo-octahedron and double small crystal cubo-octahedron;under the higher reaction pressure ,the surface morphologies mainly display the large cauliflower-like .These results show that there are various crystal habits for CVD diamond under various deposition conditions .     

利用激光——真空弧技术制备Al65Cu20Fe15准晶态合金薄膜

准晶态合金具有许多晶态合金无法比拟的特性,如低电导率、低导热率和负温度系数、抗磁性、高硬度、低摩擦系数和耐蚀性等。准晶合金做为涂层和薄膜材料具有重要的潜在应用价值。准晶合金薄膜由于对其成份的特殊要求,一般方法难以制备。本文首先介绍了激光-真空弧薄膜沉积技术和自行研制的相关设备。利用该设备,在Si<111>基体表面制备了Al65Cu20Fe15准晶态合金薄膜。研究了所制备薄膜的厚度、颗粒度等与薄膜制备过程中激光脉冲频率、引弧电压和靶材—衬底间距等工作参数之间的对应关系。结果表明,通过调整工艺参数,可以有效的改善成膜质量。薄膜沉积所用的靶材是电磁感应熔炼制备的Al65Cu20Fe15准晶整体材料。沉积在衬底上的薄膜是与准晶合金成分接近的非晶态薄膜。为了得到准晶态合金膜需对其进行退火处理,本文探讨了退火温度、与膜成分、组织结构的变化趋势之间的关系。     

Microstructures of parylene-N thin films and the effect on copper diffusion

Using scanning electron microscopy, the microstructure of annealed N-type parylene films on silicon substrate was observed and compared to the asdeposited film. The diffusion of copper through the parylene-N film was studied and correlated to the microstructure. A web-like microstructure was observed on annealing parylene-N to a temperature of 300°C and higher. This microstructure differed from the as-deposited homogeneous and continuous structure at room temperature. The web-like structure observed is proposed to be a fibrillar crystalline structure embedded in an amorphous matrix. X-ray diffraction studies supported this view and showed that the crystalline structure was theß phase. Also, when the film was annealed at 300 and 350°C, a thin continuous layer was formed at the surface of the web-like parylene-N film. In contrast, no such thin layer was observed when the annealing was performed with a copper overlayer. Based on this observation, a two-stage annealing process was carried out to reduce the copper diffusion into parylene-N, preannealing, before copper deposition and post-annealing after copper deposition. The results, as judged from Rutherford backscattering spectroscopy indicate that the thermal stability for copper diffusion into parylene-N films can be increased by 50°C (from 300 to 350°C) using pre-annealing. Experimental data shows that a minimum pre-anneal temperature of 250°C for 1 h is required for this purpose.     

Amorphous Silicon Films Prepared by Catalytic Chemical Vapor Deposition Method

ＡｍｏｒｐｈｏｕｓＳｉｌｉｃｏｎＦｉｌｍｓＰｒｅｐａｒｅｄｂｙＣａｔａｌｙｔｉｃＣｈｅｍｉｃａｌＶａｐｏｒＤｅｐｏｓｉｔｉｏｎＭｅｔｈｏｄ①②ＺＨＯＮＧＢｏｑｉａｎｇ，ＨＵＡＮＧＣｉｘｉａｎｇ，ＰＡＮＨｕｉｙｉｎｇ（ＳｈａｎｇｈａｉＩｎｓｔｉｔｕｔｅ...     

射频溅射CdTe薄膜结构特性分析

采用射频磁控溅射技术在玻璃衬底上沉积了CdTe单层薄膜,实验表明:在室温条件下,通过调节溅射功率和溅射氩气压强,沉积的CdTe薄膜显示了一系列结构形态.研究了无CdTe薄膜沉积、非晶CdTe薄膜沉积、晶化CdTe薄膜沉积的生长条件,并采用卢瑟福散射理论解释了溅射CdTe薄膜生长机制的分子动力学过程.     

Effect of Electron Drag on Performances of Carbon Nanotubes as Flow Sensors

Experimentally, the electron drag effect on carbon nanotube surface in flowing liquids was investigated. It was found that electric current could be generated in metallic carbon nanotubes immersed in the liquids. Carbon nanotubes were synthesized on Si substrate by hot filament chemical vapor deposition. The experimental results showed that the flow--induced current on the surface of carbon nanotube films was closely depended on the flow rate, concentration, properties and temperature of liquids. The flow--induced current was increased with the increasing of flow rate, concentration and temperature of liquids. The obtained results were discussed in detail.     

Deposition of Silicon Nitride Films by Silane Hydrazine Process

A new catalytic chemical vapor process for depositing silicon nitride films using silane hydrazine gaseous mixture is described.This system can be useful at a temperature of lower than 400 ℃.The catalytic process gives more rapid deposition rate than 10nm/min.The atomic composition ration.N/Si,which is evaluated by Rutherfold backattering method is about 1.4under a given experimental conditions more than the stoiciometric value of 1.33 in Si3N4.The infrared transmission spectra show a large dip at 850cm^-1 due to Si-N bonds and no clear dip due to Si-O bonds.High N-H bond density is the evidence that the deposition mechanism is limited by N-N bond breaking of the hydrazine.The H contents,evaluated from Si-H and N-H bonds in the infrared absorption spectra,and the deposition rate are measured as a function of the substrate temperature.In addition some film properties such as the reistivity and the breakdown electric field are presented.     

Deposition of thin refractory MIS structures on InP

In the present investigation, we report on significant increases in the refractory-InP Schottky barrier by process modification of the metal-semiconductor interface. Refractory-InP MIS structures were investigated as pos-sible gate metallizations. These structures consisted of Ta/Ta₂}O₅}/InP and TiW/TiO₂} /InP. A thin layer of Ta (100å) was electron beam vapor aeposited followed by the in situ formation of Ta₂}O₅} at 300?C and an oxygen overpressure. The remainder of the Ta film was deposited at 90?C substrate temperature. The TiW/TiO₂} system was formed by sputter deposition of Ti (100A?), in situ oxidation to form TiO₂} followed by deposition of TiW (88 wt % W, 12 wt % Ti). Effective barrier height for the TiW/TiO /InP structure was measured to be 0.65 eV and for the Ta/Ta₂}O₂} /InP, 0.5 eV. Leakage current at-5V was less than 3 A/cm²} for both refractory-InP MIS structures. The TiW/TiO₂} /InP structure was stable up to 400-450°C, while the Ta/Ta₂ O₅/InP system degraded to 0.2 eV at 300-350?C.     

Electrochemical growth and characterization of iron doped cadmium sulfide thin films

Cadmium Sulfide and Ferrous doped Cadmium Sulfide thin films have been prepared on different substrates using an electrodeposition technique. Linear sweep voltammetric analysis has been carried out to determine deposition potential of the prepared films. X-ray diffraction analysis showed that the prepared films possess polycrystalline nature with hexagonal structure. Surface morphology and film composition have been analyzed using Scanning electron microscopy and Energy dispersive analysis by X-rays. Optical absorption analysis showed that the prepared films are found to exhibit Band gap value in the range between 2.3, 2.8 eV for Cadmium Sulfide and Ferrous doped Cadmium Sulfide.