A novel wavelength-division multiplexer using grating-assisted two-mode interference

A novel design of wavelength-division multiplexer based on two-mode interference assisted by a highly dispersive grating structure is two-dimensionally simulated and analyzed using finite-difference time-domain method. We show that the designed grating waveguide provides a mode-dependent reflection spectrum which can be used to modify the beat lengths of the two selected wavelengths 1342 and 1560 nm, so that they can be divided in a very short distance about 48 /spl mu/m. Simulation results show that contrasts /spl sim/12 dB and insertion losses about 2 dB could be achieved.     

Arrayed waveguide grating of 70/spl times/60 /spl mu/m/sup 2/ size based on Si photonic wire waveguides

A miniature arrayed waveguide grating of 70/spl times/60 /spl mu/m/sup 2/ size consisting of Si photonic wire waveguides was designed using complete modelling in the finite-difference time-domain simulation. The device was fabricated onto a silicon-on-insulator substrate and evaluated in the wavelength range around 1.55 /spl mu/m. The clear demultiplexing characteristics were observed with a channel spacing of 11 nm and a loss of less than 1 dB.     

Gain-flattened Er/sup 3+/-doped fiber amplifier for a WDM signal in the 1.57-1.60-/spl mu/m wavelength region

A gain-flattened Er/sup 3+/-doped silica-based fiber amplifier (EDFA) has been constructed for a 1.58-/spl mu/m band WDM signal. This EDFA exhibits uniform amplification characteristics with a gain excursion of 0.9 dB for a four-channel WDM signal in the 1.57-1.60 /spl mu/m wavelength region. The average signal gain and the noise figure for the WDM signal are 29.5 dB and less than 6.3 dB, respectively. The use of this EDFA in parallel with a 1.55-/spl mu/m band EDFA will expand the WDM transmission wavelength region.     

Narrow-stripe distributed reflector lasers with first-order vertical grating and distributed Bragg reflectors

Narrow-stripe 1.55-/spl mu/m wavelength distributed reflector lasers consisting of both distributed Bragg reflectors and vertical grating of the first Bragg order were fabricated. A low threshold current I/sub th/ of 2.8 mA, a differential quantum efficiency /spl eta//sub d/ of 28% from the front facet, and a submode suppression ratio of 44 dB were obtained for structures with a stripe width of 1.3 /spl mu/m and a cavity length of 150 /spl mu/m.     

Efficient generation of wavelength-tunable single-mode pulses at 1.3 and 1.55 /spl mu/m by a simplified approach of self-injection seeding

A simple configuration to generate tunable single-mode pulses by self-injection seeding of a gain-switched semiconductor laser is demonstrated. The key part of the setup consists of a highly dispersive fiber and a fiber mirror. The configuration shows improved stability and promise to operate at both 1.3 and 1.55 /spl mu/m. The lasers at the respective wavelengths have been successively tuned over 13.43 and 12.81 nm with a side-mode suppression ratio >15 dB. Continuous access of wavelength with an enhanced tuning range is also achieved by combining both electrical and thermal control on the laser.     

InAs-InAlGaAs quantum dot DFB lasers based on InP [001]

The InAs-InAlGaAs quantum dot (QD) lasers with the InAlGaAs-InAlAs material system were fabricated on distributed feedback (DFB) grating structures on InP [001]. The single-mode operation of InAs-InAlGaAs QD DFB lasers in continuous-wave mode was successfully achieved at the emission wavelength of 1.564 /spl mu/m at room temperature. This is the first observation on the InP-based QD lasers operating around the emission wavelength window of 1.55 /spl mu/m. The threshold current density of the InAs-InAlGaAs QD DFB laser with a cavity length of 1 mm and a ridge width of 3 /spl mu/m, in which one of the cleaved facets was coated with 95% high-reflection, was 1.23 kA/cm/sup 2/ (176 A/cm/sup 2/ for single QD layer). The sidemode suppression ratio value of the QD DFB laser was as high as 42 dB at the driving current of 100 mA.     

A two-step laterally tapered 1.55-/spl mu/m SSC DFB laser fabricated by using a nonselective grating process

We demonstrate a two-step laterally tapered 1.55-/spl mu/m spot size converter distributed feedback laser diode (SSC DFB LD) having a planar buried heterostructure-type active waveguide and a ridge-type passive waveguide fabricated by using a nonselective grating process. Unlike conventional SSC DFB LDs, where a selective grating is employed, this SSC DFB LD employed a nonselective grating over the entire device region in order to make its fabrication much simpler than that of the conventional SSC DFB LDs. The two-step laterally tapered SSC is effective in removing an unwanted wavelength peak originating from the SSC section having a multiquantum well and a grating under it. The fabricated SSC DFB LD operates at 1.553-/spl mu/m wavelength and shows a far field pattern in horizontal and vertical directions of 13.4/spl deg/ and 19.5/spl deg/, respectively.     

Proposal for a polarization-independent integrated optical circulator

A polarization-independent waveguide circulator design is proposed which is well suited for monolithic integration. The circulator consists of multimode interferometers, half-wave plates, and Faraday rotators all in waveguide form. The length of the circulator is 712 /spl mu/m. Simulations show the circulator to have 25 dB of isolation and 1.3 dB of insertion loss at a wavelength of 1.55 /spl mu/m.     

InP-based 1.3-1.6-/spl mu/m VCSELs with selectively etched tunnel-junction apertures on a wavelength flexible platform

In this letter, the authors demonstrate a wavelength flexible platform for the production of long-wavelength vertical-cavity surface-emitting lasers which provide full wavelength coverage from 1.3-1.6 /spl mu/m. All-epitaxial InP-based devices with AsSb-based distributed Bragg reflectors were achieved through a common design, process, and growth technology at both the important telecommunications wavelengths of 1.3 and 1.5 /spl mu/m. Thin selectively etched tunnel junctions were implemented as low-loss apertures and offer scalability to small device dimensions. Devices showed low threshold currents (<2 mA), near single-mode (SMSR>20 dB) operation, and high differential efficiency (>40% at 1.3 /spl mu/m and >25% at 1.5 /spl mu/m).     

40-Gbit/s OEIC on GaAs substrate through metamorphic buffer technology

An optoelectronic integrated circuit operating in the 1.55-/spl mu/m wavelength range was realized on GaAs substrate through metamorphic technology. High indium content layers, metamorphically grown on a GaAs substrate, were used to fabricate the optoelectronic integrated circuits (OEICs) with -3 dB bandwidth of 40 GHz and 210 V/W of calculated responsivity. The analog OEIC photoreceiver consists of a 12-/spl mu/m, top-illuminated p-i-n photodiode, and a traveling wave amplifier (TWA). This receiver shows 6 GHz wider bandwidth than a hybrid photoreceiver, which was built using comparable, but stand-alone metamorphic p-i-n diode and TWA. With the addition of a buffer amplifier, the OEIC shows 7 dB more gain than the hybrid counterpart. To our knowledge, this is the first 40 Gbit/s OEIC achieved on a GaAs substrate operating at 1.55 /spl mu/m.     

Integrated 1.3 mu m/1.55 mu m wavelength multiplexer and 1.8 splitter by ion exchange in glass

Integration of a 1.3 mu m/1.55 mu m wavelength multiplexer and a 1/8 splitter in a single glass substrate is demonstrated by potassium and silver double-ion exchange. The device is composed of a nonsymmetric Mach-Zehnder interferometer for wavelength multiplexing and symmetrical Y-junctions for achromatic splitting. The facet-to-facet excess loss is less than 2.5 dB.<>     

Broad-band mirror (1.12-1.62 /spl mu/m) using a subwavelength grating

We report the first experimental demonstration of a novel single-layer subwavelength grating (SWG) that has >500-nm-wide reflection spectrum from 1.12-1.62 /spl mu/m and very high reflectivity (>98.5%). This SWG is scalable for different wavelengths by simply changing the grating dimensions, which, thus, facilitates monolithic integration of devices over a wide range of wavelengths.     

MEMS tunable resonant leaky mode filters

A tunable double-grating resonant leaky mode microelectromechanical-type element is introduced. A significant level of tunability is demonstrated by adjusting mechanically the structural symmetry of the grating profile. Tuning is also possible by variation of the thickness of the resonant layer. For a particular example silicon-on-insulator structure treated, it is shown that the resonance wavelength can be shifted by /spl sim/300 nm with a horizontal movement of /spl sim/120 nm within the 1.4-1.7-/spl mu/m wavelength band. Additionally, the reflectance can be varied from /spl sim/10/sup -3/ to 1 at central wavelength of 1.55 /spl mu/m with a vertical movement of /spl sim/200 nm. These results demonstrate new possibilities in design of tunable optical devices.     

Low-loss and thermally stable TE-mode selective polymer waveguide using photosensitive fluorinated polyimide

A low-loss, thermally stable TE-mode selective optical waveguide was fabricated using a photosensitive fluorinated polyimide. The polymer undergoes photocrosslinking under UV exposure, thus changing its refractive index. The photocrosslinking-induced refractive index change was utilized to form channel waveguides. The propagation losses of the photosensitive fluorinated polyimide waveguides were less than 0.3 and 0.5 dB/cm for TE polarization at wavelengths of 1.3 and 1.55 /spl mu/m, respectively. The measured polarization extinction ratio was higher than 29 and 28 dB at wavelengths of 1.3 and 1.55 /spl mu/m, respectively. The refractive index of fluorinated polyimide film remains almost constant after being stored at 150/spl deg/C for 600 min.     

Two-step laterally tapered spot-size converter 1.55-/spl mu/m DFB laser diode having a high slope efficiency

We demonstrate a two-step lateral tapered 1.55-/spl mu/m spot-size converter distributed feedback laser diode (SSC DFB LD) having slope efficiencies as high as 0.457 and 0.319 mW/mA measured at 25 /spl deg/C and 85 /spl deg/C, respectively. The SSC DFB LD fabricated by using a nonselective grating process has a double core waveguide structure including a planar buried heterostructure type active waveguide and a ridge type passive waveguide. The fabricated SSC DFB LD operates at 1.553-/spl mu/m wavelength and shows a far-field pattern in horizontal and vertical directions of 7.3/spl deg/ and 11.6/spl deg/, respectively.     

Synthesis of polarization-independent splitters based on highly birefringent dual-core photonic crystal fiber platforms

The objective of this letter is to introduce and numerically investigate the operation of a novel type of polarization-independent splitter based on highly birefringent dual-core photonic crystal fiber (PCF), which allows wavelength multiplexing at 1.3 and 1.55 /spl mu/m. The design procedure follows a rigorous synthesis algorithm based on exact equations for describing the wavelength decoupling mechanism and on full-vector finite element as well as beam propagation methods for accurate modeling of PCFs. Typical characteristics of the newly proposed PCF splitter are coupling length of 9.08 mm and available optical bandwidths defined at a level of -20 dB of 5.5 and 2 nm around 1.3 and 1.55 /spl mu/m, respectively.     

Fiber-Optical Transmission Between 0.8 and 1.4 /spl mu/m

The present state of the art and expected development in discrete components for Fiber-optic transmission systems are reviewed. Predicted performance of fiber systems in the 0.85, 1.06, and 1.27 /spl mu/m regions is presented, and the advantages of longer wavelength operation quantified. Itisconcluded that operation near 1.27 /spl mu/m is particularly attractive for a) moderate data rate systems employing LED's and multimode fibers whose chromatic dispersion and attenuation are greatly reduced compared with 0.85 and 1.06 /spl mu/m, and b) high data rate systems employing lasers and monomode fibers. In systems employing lasers and graded index multimode fibers, the advantage of 1.27/spl mu/m versus 1.06 /spl mu/m operation is not as pronounced, although transmission distances at both of these longer wavelengths are significantly increased from those at 0.85 /spl mu/m.     

Photo-bleaching induced electro-optic polymer modulators with dual driving electrodes operating at 1.55 /spl mu/m wavelength

Electro-optic (EO) polymeric Mach-Zehnder (MZ) modulators with photo-bleaching (PB) induced waveguides and dual driving electrodes operating at 1.55 /spl mu/m wavelength have been demonstrated. The half-wave voltage of the integrated polymeric modulator was 4.5 V in a push-pull configuration with a 1.5 cm interaction length. The extinction ratio was greater than 20 dB, and the fibre-to-fibre insertion loss was 8 dB for the TM polarisation. The achieved fibre-to-fibre insertion loss and driving voltage are the best, to the authors knowledge, in the reported PB induced MZ EO polymeric modulators.     

A high-speed ITO-InAlAs-InGaAs Schottky-barrier photodetector

A high-speed and high-sensitivity vertical indium-tin-oxide-InAlAs-InGaAs Schottky barrier photodetector has been designed, fabricated, and characterized. The devices had dark current densities as low as 8.87/spl times/10/sup -5/ A/cm/sup -2/ at an applied bias of 5 V. The responsivity for all the devices tested ranged from 0.55-0.60 A/W at a wavelength of 1.31 /spl mu/m, and 0.563-0.583 A/W at 1.55 /spl mu/m. The 15-/spl mu/m diameter devices exhibited a -3 dB bandwidth of 19 and 25 GHz at a wavelength of 1.55 /spl mu/m and an applied bias of 5 and 10 V, respectively. These are the best values of responsivity and bandwidth for a vertical InGaAs-based Schottky-barrier photodetector reported to date.     

All-active tapered 1.55-/spl mu/m InGaAsP BH-DFB laser with continuously chirped grating

We demonstrate the first realization of all-active tapered index coupled 1.55-/spl mu/m InGaAsP buried-heterostructure distributed feedback lasers involving chirped gratings. The variation of the effective refractive index along the tapered active stripe is compensated using an optimized continuously chirped grating. The grating has been formed using a novel direct-write electron-beam lithography technique. Lasers with an antireflection/cleaved cavity show stable single-mode operation and high optical output power up to 60 mW. The yield of lasers with a sidemode suppression ration > 40 dB is more than 70%. The -3-dB farfield angles (full-width at half-maximum) amount to 14/spl deg/ and 20/spl deg/ in lateral and vertical direction, respectively.