Low-Fire Processing of Microwave BaTi4O9 Dielectric with BaO–ZnO–B2O3 Glass

The effects of BaO—ZnO–B₂O₃ (BZB) glass addition on the densification and dielectric properties of BaTi₄O₉ (BT4) have been investigated. With increasing BaO content in the BZB glass, the softening and melting points of the resulting BZB glass decrease, but the wetting between BZB and BT4 improves cosiderably. Although the densification temperature is reduced from 1300°C for pure BT4 to 925°C for BT4+BZB dielectric ceramics, the enhancement in densification becomes less significant with increasing BaO content in the BZB glass. The above result is attributed to a chemical reaction taking place at the interface of BZB/BT4 during firing, which becomes less extensive with increasing BaO content in the BZB glass. For the BZB glass with a BaO content in the range of 0–20 mol%, the resulting 90 vol% BT4+10 vol% BZB microwave dielectric has a dielectric constant of 28–33, and a product ( Q × f _r) of quality factor ( Q ) and a resonant frequency ( f _r) of 15 000–20 000 GHz at 6.6 GHz.     

Microwave Dielectric Properties of CaTiO3-CaAl1/2Nb1/2O3 Ceramics Doped with Li3NbO4

The microwave dielectric properties of CaTi_{1− x} (Al_1/2Nb_1/2) _x O₃ solid solutions (0.3 ≤ x ≤ 0.7) have been investigated. The sintered samples had perovskite structures similar to CaTiO₃. The substitution of Ti⁴⁺ by Al³⁺/Nb⁵⁺ improved the quality factor Q of the sintered specimens. A small addition of Li₃NbO₄ (about 1 wt%) was found to be very effective for lowering sintering temperature of ceramics from 1450–1500° to 1300°C. The composition with x = 0.5 sintered at 1300°C for 5 h revealed excellent dielectric properties, namely, a dielectric constant (ɛ_r) of 48, a Q × f value of 32 100 GHz, and a temperature coefficient of the resonant frequency (τ_f) of −2 ppm/K. Li₃NbO₄ as a sintering additive had no harmful influence on τ_f of ceramics.     

Low-Temperature Sintering Barium Titanate-Based X8R Ceramics with Nd2O3 Dopant and ZnO–B2O3 Flux Agent

To demonstrate that barium titanate-based ceramics could be sintered at a low temperature thus reducing the cost of capacitor production, systematic investigation has been made on the structure and dielectric properties of barium titanate-based X8R ceramics, doped with various Nd₂O₃ content and different ZnO–B₂O₃ solution as the sintering aids. The dielectric ceramic powder with good permittivity and low dielectric loss were obtained at a sintering temperature of 900°C, meeting X8R specifications. Transmission electron microscopy and EDS analysis shows a high concentration of Nd element in the boundary regions, which verifies the beneficial role of Nd in facilitating the formation of core-shell structure. The results also suggest that the developed BaTiO₃-based ceramics may serve as a promising candidate for fabricating cheap multilayer capacitors with pure Ag as inner electrode.     

Effects of B2O3 Addition on the Dielectric and Ferroelectric Properties of Ba0.7Sr0.3TiO3 Ceramics

The effects of B₂O₃ addition on the sintering behavior and the dielectric and ferroelectric properties of Ba_0.7Sr_0.3TiO₃ (BST) ceramics were investigated. The dielectric and ferroelectric properties of a BST sample with 0.5 wt% B₂O₃ sintered at <1150°C were as good as those of undoped BST sintered at 1350°C, and the dielectric loss was better. When >1.0 wt% B₂O₃ was added to BST, the overdoped B₂O₃ did not form a liquid phase or volatilize; it remained in the samples and formed a secondary phase that lowered the sintering behavior and the dielectric and ferroelectric properties of the BST.     

Microwave Dielectric Properties of 5Li2O–0.583Nb2O5–3.248TiO2 Ceramics with V2O5

The effects of V₂O₅ addition on the sintering behavior, microstructure, and the microwave dielectric properties of 5Li₂O–0.583Nb₂O₅–3.248TiO₂ (LNT) ceramics have been investigated. With addition of low-level doping of V₂O₅ (≤2 wt%), the sintering temperature of the LNT ceramics could be lowered down to around 920°C due to the liquid phase effect. A secondary phase was observed at the level of 2 wt% V₂O₅ addition. The addition of V₂O₅ does not induce much degradation in the microwave dielectric properties but lowers the τ_f value to near zero. Typically, the excellent microwave dielectric properties of ɛ_r=21.5, Q × f =32 938 GHz, and τ_f=6.1 ppm/°C could be obtained for the 1 wt% V₂O₅-doped sample sintered at 920°C, which is promising for application of the multilayer microwave devices using Ag as an internal electrode.     

Low-Temperature Sintering and Microwave Dielectric Properties of Li2MgSiO4 Ceramics

Development of a low-temperature sintered dielectric material derived from Li₂MgSiO₄ (LMS) for low-temperature cofired ceramic (LTCC) application is discussed in this paper. The LMS ceramics were prepared by the solid-state ceramic route. The calcination and sintering temperatures of LMS were optimized at 850°C/4 h and 1250°C/2 h, respectively, for the best density and dielectric properties. The crystal structure and microstructure of the ceramic were studied by the X-ray diffraction and scanning electron microscopic methods. The microwave dielectric properties of the ceramic were measured by the cavity perturbation method. The LMS sintered at 1250°C/2 h had ɛ_r=5.1 and tan δ=5.2 × 10⁻⁴ at 8 GHz. The sintering temperature of LMS is lowered from 1250°C/2 h to 850°C/2 h by the addition of both lithium borosilicate (LBS) and lithium magnesium zinc borosilicate (LMZBS) glasses. LMS mixed with 1 wt% LBS sintered at 925°C/2 h had ɛ_r=5.5 and tan δ=7 × 10⁻⁵ at 8 GHz. Two weight percent LMZBS mixed with LMS sintered at 875°C/2 h had ɛ_r=5.9 and tan δ=6.7 × 10⁻⁵ at 8 GHz.     

Electrical Properties of Sr0.7Ba0.3TiO3 Ceramics Doped with Nb2O5, 3Li2O · 2SiO2, and Bi2O3

The electrical properties of Sr_0.5Ba_0.3TiO₃ in the presence of Nb₂O₅ as a donor, 3Li₂O · 2SiO₂ as a sintering agent, and Bi₂O₃ as a dopant have been studied. When the compositions of the ceramics were 1 mol Sr_0.7Ba_0.3TiO₃+ 0.5 mol% Nb₂O₅+ 2 mol% 3Li₂O · 2SiO₂+ 0.2 mol% Bi₂O₃, the ceramics were sintered at 1100°C and exhibited the following characteristics: apparent dielectric constant ɛ, 25000; loss factor tan δ, 2%; insulating resistivity ρ_j, 10¹⁰Ω· cm; variation of dielectric constant with temperature Δɛ/ɛ (−25° to +85°C), +10%, −14%. ɛ and tan δ show only small changes with frequency. The study shows this ceramic can be used in multilayer technology.     

Microwave Dielectric Properties of Doped BaTi4O9

Polycrystalline BaTi₄O₉ doped with Mn, Sn, Zr, Ca, Sr, and Pb was prepared from carbonates and oxides. Single-phase ceramics with densities exceeding 97% of theoretical were made with up to 3 mol% Mn; 6 mol% Sn, Zr, and Ca; and 8 mol% Sr and Pb. Dielectric constant, k , quality factor, Q , and temperature coefficient of frequency, τ _f , of ∼37, 5675, and 15 ppm/°C, respectively, were determined at 4 GHz for undoped BaTi₄O₉. Doping did not significantly affect k and τ _f . However, doping with Mn, Sn, and Pb lowered Q , whereas doping with Zr, Ca, and Sr increased Q by up to 2000. Additions of 0.5 mol% MnO₂ as a second phase improved Q from 3675 to 7600.     

Sintering and Microwave Dielectric Properties of the LiNb0.63Ti0.4625O3 Ceramics with the B2O3–SiO2 Liquid-Phase Additives

The effect of B₂O₃–SiO₂ liquid-phase additives on the sintering, microstructure, and microwave dielectric properties of LiNb_0.63Ti_0.4625O₃ ceramics was investigated. It was found that the sintering temperature could be lowered easily, and the densification and dielectric properties of LiNb_0.63Ti_0.4625O₃ ceramics could be greatly improved by adding a small amount of B₂O₃–SiO₂ solution additives. No secondary phase was observed for the ceramics with B₂O₃–SiO₂ additives. With the addition of 0.10 wt% B₂O₃–SiO₂, the ceramics sintered at 900°C showed favorable microwave dielectric properties with ɛ_r=71.7, Q × f =4950 GHz, and τ_f=−2.1 ppm/°C. The energy dispersive spectra analysis showed an excellent co-firing interfacial behavior between the LiNb_0.63Ti_0.4625O₃ ceramic and the Ag electrode. It indicated that LiNb_0.63Ti_0.4625O₃ ceramics with B₂O₃–SiO₂ solution additives have a number of potential applications on passive integrated devices based on the low-temperature co-fired ceramics technology.     

Dielectric Constant and Optical Reflectance of Ceramic Filler-Added BaO–ZnO–B2O3–P2O5 Glass Composites

This study examined the influence of the addition of ceramic fillers (up to 20 wt% of TiO₂, Al₂O₃, and ZnO, respectively) to a BaO–ZnO–B₂O₃–P₂O₅ glass matrix on the dielectric and optical properties with the aim of using this material as the barrier ribs in plasma display panels. The modification of the dielectric constant by the fillers was related to the formation of secondary phases, the changes in the glass composition by the partial dissolution of the fillers, and the presence of pores. The reflectance of the composites ranged from 60% to 80% with the addition of 20 wt% filler.     

The Li2O–Nb2O5–TiO2 Composite Microwave Dielectric Ceramics with Adjustable Permittivities

A group of new y M-phase/(1− y ) Li_{2+ x} Ti_{1−4 x} Nb_{3 x} O₃ composite ceramics with adjustable permittivities for low-temperature co-fired ceramic applications was initially investigated in the study. The 0.5 M-phase/0.5 Li_{2+ x} Ti_{1−4 x} Nb_{3 x} O₃ ( x =0.01, 0.02, 0.04, 0.06, 0.081) composite ceramics were first investigated to find the appropriate "Li₂TiO₃ss" composition ( x value). The best dielectric properties of ɛ_r=40.1, Q × f values up to 9318 GHz, τ_f=25 ppm/°C, were obtained for the ceramics composites at x =0.02. Based on the good dielectric properties, the suitable "Li₂TiO₃ss" composition with x =0.02 was mixed with the Li_1.0Nb_0.6Ti_0.5O₃ powder as the ratio of y "M-phase"/(1− y ) "Li₂TiO₃ss" ( y =0.2, 0.4, 0.5, 0.6, 0.8). By adjusting the y values, the group of composite ceramics could exhibit largely are adjustable permittivities varying from ∼20 to ∼60, while Q × f and τ_f values relatively good. Nevertheless, in this study, because there are interactions between the M-phase and Li₂TiO₃ss during sintering process, their microwave dielectric properties could not be predicted precisely by the empirical model.     

Effect of Li2CO3 Addition on the Sintering Temperature and Microwave Dielectric Properties of Mg2V2O7 Ceramics

Li₂CO₃ was added to Mg₂V₂O₇ ceramics in order to reduce the sintering temperature to below 900°C. At temperatures below 900°C, a liquid phase was formed during sintering, which assisted the densification of the specimens. The addition of Li₂CO₃ changed the crystal structure of Mg₂V₂O₇ ceramics from triclinic to monoclinic. The 6.0 mol% Li₂CO₃-added Mg₂V₂O₇ ceramic was well sintered at 800°C with a high density and good microwave dielectric properties of ɛ _r=8.2, Q × f =70 621 GHz, and τ_f=−35.2 ppm/°C. Silver did not react with the 6.0 mol% Li₂CO₃-added Mg₂V₂O₇ ceramic at 800°C. Therefore, this ceramic is a good candidate material in low-temperature co-fired ceramic multilayer devices.     

Studies in Lithium Oxide Systems: I, Li2O B2O3–B2O3

Phase relationships in the system Li₂O, B₂O₃-B₂O₃ were studied by the quenching method using twenty compositions. The crystalline phases encountered were (a) Li₂O, B₂O₃, which melts congruently at 849°± 2°C., (b) Li₂O.-2B₂O₃, which melts congruently at 917°± 2°C., (c) a new compound, 2Li₂O-5B₂O₃, which melts incongruently at 856°± 2°C. and dissociates below 696°± 4°C., (d) Li₂O.3B₂O₃, which melts incongruently at 834°± 4°C. and dissociates below 595°± 20°C., and (e) probably Li₂O.4B₂O₃, which melts incongruently at 635°± 10°C. Reactions were sluggish at temperatures near 600°C., resulting in metastable relations. Hence phase equilibrium data relating to the lower stability limit of Li₂O.3B₂O₃ and to the upper stability limit of Li₂O.4B₂O₃ are considered to be tentative. Properties of the glasses and crystalline phases were studied. The refractive index of the glasses increased with the addition of Li₂O up to 22%, but further additions up to 40% had no substantial effect. Glasses containing less than 30% Li₂O were water soluble. Limited data on the density and thermal expansion of the glasses are presented. Li₂OB₂O₃ was euhedral, lath-shaped, length-fast, biaxial negative (2V = 27°), with n_α= 1.540, n_β= 1.612, n_γ= 1.616. Li₂O.2B₂O₃ was uniaxial negative, with n_e= 1.560, n_w= 1.605. Li₂O.3B₂O₃ was biaxial negative (2V = 75° to 80°), with n_α= 1.576, n_β= 1.602, n_γ= 1.605. X-ray powder diffraction data for the five crystalline compounds are presented. Thermal expansion data for Li₂O-B₂O₃ and Li₂O.2B₂O₃ and limited data on the fluorescent properties of the compounds are given. X-ray diffraction data are also presented for Li₂O.B₂O₃.4H₂O and Li₂O.-5B₂O₃. 10H₂O. Li₂O B₂O₃ was obtained by heating the first hydrate at 450° to 680° C. X-ray diffraction showed Li₂O.4B₂O₃ and Li₂O-3B₂O₃ to be the crystalline products obtained during heating the decahydrate at 500°C. and 600°C., respectively.     

Microwave Dielectric Properties of Hexagonal 12R-Ba3LaNb3O12 Ceramics

The dielectric properties of dense ceramics of the n =0 member of a newly identified homologous series Ba_{3+ n} LaNb₃Ti _n O_{12+3 n} , where n =0, 1, and 2, are reported. Single-phase powders can be obtained from the mixed-oxide route at 1350°C and dense ceramics (>97% of the theoretical X-ray density) with uniform microstructures (3–5 μm) can be obtained by sintering in air at 1500°C. The ceramics are excellent dc insulators with a band gap >2.6 eV that resonate at microwave frequencies with a relative permittivity, ɛ_r∼44, a quality factor, Q × f _r, of ∼9000 at f _r∼5.5 GHz and a temperature coefficient of resonant frequency, TC_f,∼−100 ppm/K.     

Phase Relations and Dielectric Properties in the Bi2O3–ZnO–Ta2O5 System

Dielectric properties and phase formation of Bi-based pyrochlore ceramics were evaluated for the Bi₂O₃–ZnO–Ta₂O₅ system. The compositional range r Bi₂(Zn_1/3Ta_2/3)₂O₇· (1− r )(Bi_3/2Zn_1/2)(Zn_1/2Ta_3/2)O₇ (0 ≤ r ≤ 1) in Bi₂O₃–ZnO–Ta₂O₅ was investigated to determine the relative solubility of BZT cubic (α-BZT, r = 0) and the pseudo-orthorhombic (β-BZT, r = 1) end members. It was found that extrinsic factors, such as kinetically limited phase formation and bismuth loss, contribute to apparent phase boundaries in addition to thermodynamic stability of each phase. Considering this, the locations of true phase boundaries were r < 0.30 and r ≥ 0.74 for α and β phases, respectively. Dielectric constants between 58 and 80 and low dielectric loss (tan δ < 0.003) were measured for the complete compositional range. The temperature coefficient of capacitance was controlled by composition, which was found to be <30 ppm/°C at the edge of β-phase solid solution. In addition to the excellent dielectric properties these materials can be sintered at low temperatures, which make Bi-based pyrochlores promising candidates for high-frequency electronic applications.     

Microwave Dielectric Properties of Low-Fired ZnNb2O6 Ceramics with BiVO4 Addition

The BiVO₄ additive was found effective for low-temperature firing of ZnNb₂O₆ polycrystalline ceramics below 950°C in air without a serious degradation in their microwave dielectric properties. Dense BiVO₄-doped ZnNb₂O₆ samples of a relative sintered density over 95% could be prepared even at 925°C. An optimally processed specimen exhibited excellent microwave dielectric properties of Q · f = 55000 GHz, ɛ_r= 26, and τ_f=−57 ppm/°C. With increasing BiVO₄ addition up to 20 mol% relative to ZnNb₂O₆, while the quality factor Q · f was gradually decreased, the relative dielectric constant, ɛ_r, was linearly increased and the temperature coefficient of resonant frequency, τ_f, was slightly increased. The variations in Q · f and ɛ_r are surely attributable to the residual BiVO₄ in the ZnNb₂O₆ matrix. An unexpected slight increase in τ_f is probably due to the formation of the Bi(V,Nb)O₄-type solid solution.     

Microstructural Development in SnO2-Doped ZnO–Bi2O3 Ceramics

The effects of adding small quantities of SnO₂ to the basic ZnO–Bi₂O₃ varistor composition were studied in terms of phase reactions, microstructural development, and the formation of inversion boundaries. Scanning and transmission electron microscopy studies showed that the inversion boundaries, triggered by the addition of SnO₂, cause anisotropic grain growth in the early stages of sintering. ZnO grains that include inversion boundaries grow exaggeratedly, at the expense of normal grains, until they dominate the microstructure. Higher additions of SnO₂ lead to an increase in number of grains with inversion boundaries and to a more fine-grained microstructure. The increasing amount of secondary phases is also related to a higher level of SnO₂ addition; however, the influence of these phases on ZnO grain growth is subordinate to the role of inversion boundaries.     

Interfacial Reaction of BaTiO3 Ceramics with PbO–B2O3 Glasses

Interfacial reactions of pure, lead-, and zirconium-substituted BaTiO₃ ceramics with PbOB₂O₃ glasses were studied, with an emphasis on the effect of glass composition. Microstructures were analyzed by scanning electron microscopy and electron-probe microanalysis aided with X-ray diffractometry of powder mixtures in the system BaTiO₃PbOB₂O₃ heated at 850°C. The interfacial microstructures were divided into two types, depending on the glass composition. The first type was characterized by precipitates of TiO₂ dispersed in the glass matrix. Extended heating or limited glass volume resulted in the formation of a continuous layer of BaTi(BO₃)₂. The second type of microstructure was characterized by a lead-rich perovskite phase, which developed at the glass/ceramic interfacial region. Growth kinetics for this phase denied the diffusion-controlled mechanism. The substitution of lead in BaTiO₃ enhanced the penetration of glass into the ceramics along the grain boundaries and developed a coreshell structure.     

Microwave Dielectric Properties and Low-Temperature Sintering of Ba0.60Sr0.40TiO3 Ceramics

In the present work, the sintering behaviors and dielectric properties of Ba_0.60Sr_0.40TiO₃ (BST) ceramics with the addition of BaCu(B₂O₅) were investigated in detail. The results indicated that the addition reduced the sintering temperature of BST by about 500°C. It was suggested that a liquid phase BaCu(B₂O₅) assisted the densification of BST ceramics at lower temperatures. For a low-level BaCu(B₂O₅) addition (2.0 mol%), the BST sample sintered at 950°C for 5 h displayed good dielectric properties, with a moderate dielectric constant (ɛ=2553) and a low dielectric loss (tan δ=0.00305) at room temperature and at 10 kHz. The sample showed 45.9% tunability at 10 kHz under a dc electric field of 30 kV/cm. At the frequency of 0.984 GHz, BST-added 2.0 mol% BaCu(B₂O₅) possessed a dielectric constant of 2204 and a Q value of 146.7.