共查询到16条相似文献,搜索用时 203 毫秒
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针对电源分配网络中多芯片的去耦电容器的快速选取这一问题,提出一种新的去耦电容器快速选取方案,使得PDN的阻抗既能低于目标阻抗,又不至于过度设计。文中采用优化的频域目标阻抗法,针对多芯片的电源分配网络模型,给出去耦电容器的种类和数目的选取方案。通过GUI界面的仿真,发现该算法能够有效地适用于多芯片的情况,具有较大的工程应用价值。 相似文献
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针对在电源分配网络设计过程中,人工选择去耦电容器个数会导致反复设计的问题,提出了基于自适应遗传算法的去耦电容器自动选择的方法。该方法模拟达尔文生物进化论的自然选择过程,在满足目标阻抗的同时,选择出使用去耦电容器总个数最少的方案,以实现自动选择的目的。仿真结果与PCB全波仿真软件结果对比表明,该方法能够满足工程应用的要求,并已被某大型IT企业所采用。 相似文献
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传统的利用单端口自阻抗指导电源分配网络设计方法(FDTI),主要适用于一个电源/地平面只有一个负载芯片的情况,对现阶段多负载芯片的复杂电源分配网络已不再适用。文中通过全波仿真软件SI-wave提取每个负载芯片的多输入叠加阻抗,用以指导多负载芯片复杂电源分配网络的设计。利用矢量拟合算法拟合多输入叠加阻抗曲线的有理函数,将该有理函数导入相关电容器选择算法中得到每个芯片的去耦方案。实验结果表明,将选出的去耦电容添加到电源/地平面后,芯片电源端口处的噪声在容许的5%范围内。 相似文献
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现阶段比较成熟的电源配送网络(PDN)分析方法多是针对单芯片单电源端口进行,无法满足高速系统多电源轨道的需求。文中通过对N端口网络的理论推导,分析了多电源端口PDN阻抗增加的原理,引入多输入阻抗的概念,用以精确捕捉PDN电流分布特性,进而提出了一种适用于多芯片多输入PDN的分布式建模方法,并给出复杂PDN整板去耦方案。实验例证表明,给出的去耦方案能有效地将所有芯片的多输入阻抗降低到目标阻抗之下,满足系统5%噪声容限范围要求。 相似文献
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通过多输入阻抗准确描述当代高速平面电源分配网络(PDN).该阻抗能够同时探查多个激励源输入及准确估量其他端口对PDN的影响.多输入阻抗是一种新颖的输入阻抗,它有两种表现形式:多输入自阻抗和多输入叠加阻抗.前者用于描述同一IC内各个电源端口之间的影响,后者用于描述不同IC之间的影响.经时频域仿真,该多输入阻抗能同时精确地... 相似文献
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为使PDN阻抗曲线能在一个较宽的频率范围内不超过目标阻抗曲线,对去耦电容器种类的选择至关重要。因此,提出了基于自谐振频率电容器种类的选择算法,该算法已经用于工程实际中,效果理想。 相似文献
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《Advanced Packaging, IEEE Transactions on》2008,31(3):544-557
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Cai Y. Fu J. Hong X. Tan S.X.-D. Luo Z. 《Circuits and Systems II: Express Briefs, IEEE Transactions on》2006,53(10):1012-1016
In this brief, the authors take a first look at the leakage effects of decaps in power/ground (P/G) grid optimization. Through the use of an approximate leakage current model, it is revealed that simple usage of the leakage model in traditional optimization methods cannot help in reducing noises on P/G grids, and it even hurts power consumption due to overadded decaps. Therefore, it is necessary to develop an efficient method to budget decaps when leakage effect is considered. Here, a new two-stage approach to solve this problem is proposed. Experimental results demonstrate the effectiveness of our new method 相似文献
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《Very Large Scale Integration (VLSI) Systems, IEEE Transactions on》2009,17(2):292-301
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《Microwave Theory and Techniques》2009,57(7):1818-1831
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This paper presents a compact model for on-chip decoupling capacitors (decaps) including gate-oxide leakage. The model makes use of only four parameters, namely, channel resistance, gate-oxide capacitance, and two parameters to quantify gate-oxide leakage, to predict the static and dynamic response of decaps. Quality indices have been defined to enable development of decap design guidelines and evaluation of performance of such capacitors. The model shows how the gate leakage and longer channel lengths severely affect the performance of on-chip decaps for both low and high frequencies. The model also shows that lumped models of decaps at high frequencies fail and have to be substituted by a distributed model. Application of the model uncovers tradeoffs for thin- and thick-oxide capacitors in an available 90-nm CMOS technology. For a general-purpose technology, a reference capacitance value has been realized using decaps with a discrete width and length. Our model predicts that thick-oxide n-channel (p-channel) capacitors require /spl sim/3.37x (/spl sim/3.31x) more silicon area and /spl sim/1.70x (/spl sim/1.17x) degraded time response as compared to their thin-oxide versions. The time response is even more degraded (/spl prop/L/sup 2/) when longer channel decaps are used. This paper contributes by defining performance benchmarks for decaps. 相似文献
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This paper presents design-oriented analysis of the power distribution network (PDN) for high performance microprocessor systems to realize the resonant free, close to flat output impedance magnitude over a wide frequency range. Based on the frequency domain analysis, closed form design equations and parametric curves relating the system parameters are derived. A systematic method of estimating the optimum parameters of the decoupling capacitors used in a single or multistage PDN is described to realize the output impedance of specified magnitude for the noise-free, and critically damped voltage at the microprocessor core. The design examples and simulation results are discussed to demonstrate the application of the design equations and parametric curves. 相似文献