CZT晶体用化学机械抛光液的制备及其性能研究

化学机械抛光工艺是碲锌镉(Cadmium Zinc Telluride,CZT)晶体表面处理的关键技术之一.其中,化学机械抛光液是影响晶片表面质量的重要因素.目前用于CZT晶片的抛光液主要是依靠进口的碱性抛光液,这严重制约了我国CZT晶体研究的发展.采用硅溶胶和次氯酸钠(NaClO)溶液作为主要原料,制备了碱性化学机械抛光液.然后采用该抛光液对CZT晶片表面进行了化学机械抛光,并对抛光表面进行了表征.实验结果表明,抛光后晶片表面的粗糙度小于2 nm,因此采用硅溶胶-次氯酸钠碱性抛光液可制备出高质量的CZT抛光表面.     

碲锌镉晶体材料合成技术研究

碲锌镉晶体是研制碲镉汞红外焦平面探测器所需的衬底材料。其制备技术由源材料合成、晶体生长、衬底加工和测试评价四个部分组成。对源材料合成工艺中的放热过程和合成料化学计量比的控制方法进行了研究。通过测量合成反应过程中石英坩埚的温度,计算了合成反应过程的放热速率。用可视监控系统观测了碲锌镉多晶合成反应的动态过程,揭示了影响合成反应速率的因素。在此基础上,用温度梯度法和定向凝固法技术实现了对合成反应速率和合成料化学计量比的有效控制。     

硅基碲镉汞红外探测器表面钝化研究

碲镉汞(Mercury Cadmium Telluride, MCT)材料的表面钝化是红外探测器制备中的关键工艺之一。高性能MCT器件需要稳定且可重复生产的钝化表面和符合器件性能要求的界面。因此,探究MCT表面钝化技术具有重要意义。研究了MCT的分子束外延(Molecular Beam Epitaxy, MBE)原位钝化与磁控溅射钝化两种钝化技术。结果表明,MBE原位钝化膜层的致密性较好,钝化层表面的缺陷孔洞较小,钝化层与MCT的晶格匹配度较好,器件流片的电流-电压(I-V)特性要优于磁控溅射正常钝化。     

EPG 535光刻胶氧离子刻蚀工艺的研究

采用反应离子刻蚀(RIE)技术,对EPG 535光刻胶和碲锌镉(CZT)基体刻蚀工艺进行研究,采用原子力显微镜(AFM)法测试CZT基体刻蚀前后的表面质量,探讨了EPG 535光刻胶刻蚀速率和CZT基体表面粗糙度的影响因素。结果表明,当RF功率为60 W、氧气气压为1.30 Pa、氧气流量为40 cm3/min,光刻胶达到最大刻蚀速率;随着RF功率降低,刻蚀后CZT基体的表面粗糙度降低。实验优化的刻蚀参数为:RF功率40 W、氧气气压1.30 Pa、氧气流量40 cm3/min。     

高德红外640×512中波红外探测器的规模化生产

经过多年的研发工作,制冷型碲镉汞(Mercury Cadmium Telluride,MCT)中波红外探测器已经实现了批量化生产能力,其阵列规格也从最初的320×256发展到现在的1280×1024(百万像元级)。目前,随着武汉高德红外股份有限公司(以下简称"高德红外公司")探测器产品水平的不断提高,基于红外探测器的热成像系统被广泛应用于机载、舰载、陆战以及手持观测等军用装备。以640×512/15μm碲镉汞中波红外探测器为例,介绍了高德红外公司探测器产品的工程化应用情况,并分析了探测器研制过程中需要解决的问题,最后指出了未来探测器发展及应用的方向。     

大幅宽多谱段高光谱红外探测器研究

报道了基于分子束外延(Molecular Beam Epitaxy, MBE)碲镉汞(Mercury Cadmium Telluride, MCT)技术的大幅宽、多谱段、大像元高光谱红外探测器的最新研究进展。采用MBE技术制备出高质量MCT材料;采用成熟的n-on-p技术路线制备探测芯片,并针对特殊形状的大像元进行了优化;高光谱专用读出电路设计针对短波、窄谱段、小信号等典型特征进行了优化,并针对光谱应用加入行增益可调等功能设计。测试结果表明,组件基本性能良好,有效像元率大于99.5%,平均量子效率优于70%。     

碲锌镉衬底上中长双色红外碲镉汞分子束外延生长研究

报道了使用分子束外延(Molecular beam epitaxy,MBE)技术,在(211)B碲镉汞(CdZnTe,CZT)衬底上生长中长波双色碲镉汞(HgCdTe,MCT)薄膜材料,生长温度为180℃,研究了双色碲镉汞薄膜材料衬底脱氧技术、分子束外延薄膜生长温度与缓冲层生长等关键技术,实现了中长波双色碲镉汞薄膜生长,外延薄膜采用相差显微镜、扫描电子显微镜(SEM)、傅里叶变换红外光谱仪(FTIR)、二次离子质谱仪(SIMS)及X射线衍射仪(XRD)对薄膜的表面缺陷、厚度、组分及其均匀性、薄膜纵向组分以及晶体质量进行了表征,表面缺陷数量低于600 cm~(-2),组分(300 K测试)和厚度均匀性分别为(35)x≤0.001、(35)d≤0.9μm,X-Ray双晶衍射摇摆曲线FWHM=65 arcsec,得到了质量较高的中长波双色碲镉汞薄膜材料。     

碲镉汞薄膜表面钝化的研究进展

赝二元体系碲镉汞(Mercury Cadmium Telluride, Hg_xCd_1-xTe)材料具有优异的光电特性,是制备高灵敏度红外探测器的最重要材料之一。为了获得性能优异的Hg_xCd_1-xTe探测器及其组件,目前已经发展了各种Hg_xCd_1-xTe材料制备技术和器件制作工艺。但在各种材料制备及器件应用过程中,Hg_xCd_1-xTe表面均会受到环境和不良表面效应的影响,所以需要采用先进的钝化工艺对其表面电荷态进行处理,改善材料表面的电学物理特性,从而实现器件探测性能的提升。因此,Hg_xCd_1-xTe薄膜表面钝化工艺对Hg_xCd_1-xTe红外探测器的性能提升至关重要。总结和分析了近年来碲镉汞薄膜表面钝化层的生长方法。按照本源钝化和非本源钝化进行了分类总结和综述,分析了不同钝化方法的优缺点,并对未来碲镉汞薄膜钝化工艺进行了展望。     

论碲镉汞光电二极管的暗电流

对于工作在1—30岬波段的各种红外光电探测器来说,碲镉汞（Mercury Cadmium Telluride,MCT）已经成为最重要的一种半导体材料。为了获得最优的性能,MCT探测器的暗电流必须降至最小。主要根据近年来的部分英文文献,从基本概念入手,介绍了有关MCT光电二极管暗电流研究的发展情况,并讨论了对于MCT光电二极管暗电流有关问题的理解和体会。     

半导体与半金属卷18碲镉汞

详细讨论了碲镉汞晶体生长技术以及器件制备工艺,共分七章。 1)现代红外灵敏材料碲镉汞的出现回顾发展概况,评述其电性能、光学特性和结构特点。 2)高纯镉、汞和碲的制备除介绍提纯技术,还讨论了有关的化学分析方法。 3)碲镉汞晶体生长分别介绍了淬火-再结晶法、液-固体生长法、外延生长法以及其它方法。     

碲锌镉晶体表面磨抛方法研究

碲锌镉是一种性能优异的Ⅱ-Ⅵ族化合物半导体材料。随锌含量不同,其禁带宽度可连续调节,是用于制备红外探测器的碲镉汞材料的优良衬底。介绍了多种碲锌镉晶体的磨抛方法,包括手工研磨、机械抛光、化学抛光和机械化学抛光。借助多种表征技术和改良手段,碲锌镉晶体的表面加工取得了显著进步。     

Cadmium(1−x)zinc(x)telluride thin films deposited by sequential pulsed laser deposition

In this work, sequential pulsed laser deposition was used for the deposition of cadmium zinc telluride (CZT) thin films. CZT is a ternary II–VI compound semiconductor with a tunable band gap between 1.51 and 2.26 eV. In this work, three different CZT film compositions were achieved at room temperature by sequential deposition of nanometric layers with a precise number of laser shots on the cadmium telluride (CdTe) and zinc telluride (ZnTe) targets. XPS, XRD and UV–vis transmittance techniques were used to characterize the CZT films. The atomic content of zinc ranged from 60% down to 13%. This represents an enlargement of the lattice constant from 6.19 to 6.41 Å, and a band gap decrement from 1.94 to 1.55 eV. In addition, the CZT film resistivity can be modulated between the CdTe (4.1×10⁷ Ω-cm) and ZnTe (2.8×10⁵ Ω-cm) values. Our results demonstrated that the sequential pulsed laser deposition can be used to obtain several CZT film compositions with precise control of its stoichiometry and can be extended to the production of other ternary compounds.     

室温核辐射CdZnTe像素阵列探测器的研制

报道了一种基于N型Cd0.9Zn0.1Te晶体材料的室温核辐射探测器.为充分发挥CdZnTe材料的优点,实验中采用了一系列工艺优化措施:如对材料表面进行处理,采用Pt/Au双层电极结构并优化器件表面钝化方法,改善退火条件等,从而制备出性能优良的7mm×7mm×5 mm阵列像素(3×3)探测器:其57Co12-2 ke光谱能量分辨率为23.7%(28.9 keV FWHM),137Cs 662 keV光谱分辨率为17.9%(17.8 keV FWHM);光谱曲线理想,呈高斯分布形状;低能带尾非常陡峭,这说明空穴的影响较小,可以略此外,该探测器在室温及不同测试条件下均能稳定工作,与传统探测器相比,省去了复杂昂贵的低温制冷系统,降低了成本.     

激光诱导自蔓延反应合成非晶复合材料组织与性能

利用构成Zr基大块非晶合金体系的主要组元之间具有很大的负混合焓而能发生很强放热反应的特点 ,设计了激光诱导自蔓延反应合成大块非晶合金的工艺。针对Zr Al Ni Cu合金体系的初步研究表明 ,合成产物主要是由非晶 ,Zr3Al2 及Zr2 Cu型金属间化合物所构成。随着掺杂 (Zr,C)含量的增加 ,合成产物中非晶比例降低 ,而硬度及耐磨性增加。     

Internal Electric Field Investigations of a Cadmium Zinc Telluride Detector Using Synchrotron X-ray Mapping and Pockels Effect Measurements

Cadmium zinc telluride (CZT) has remained a major focus of research due to its promising application as a room-temperature nuclear radiation detector material. Among the several parameters that substantially affect the detectors’ performance, an important one is the distribution of the internal electric field. Brookhaven National Laboratory (BNL) employed synchrotron x-ray microscale mapping and measurements of the Pockels effect to investigate the distribution of the internal electric field in a CZT strip detector. Direct evidence that dislocations can distort the internal electric field of the detector was obtained. Furthermore, it was found that “star” defects in the CZT crystal, possibly ascribed to dislocation loop punching, cause charge trapping.     

Material properties of large-volume cadmium zinc telluride crystals and their relationship to nuclear detector performance

The material showing the greatest promise today for production of large-volume gamma-ray spectrometers operable at room temperature is cadmium zinc telluride (CZT). Unfortunately, because of deficiencies in the quality of the present material, high-resolution CZT spectrometers have thus far been limited to relatively small dimensions, which makes them inefficient at detecting high photon energies and ineffective for weak radiation signals except in near proximity. To exploit CZT fully, it will be necessary to make substantial improvements in the material quality. Improving the material involves advances in the crystallinity, purity, carrier lifetimes, and control of the electrical compensation mechanism. A more detailed understanding of the underlying material problems limiting the performance of CZT gamma-ray detectors is required; otherwise, problems with supply, delivery times, and unit cost of large-volume (>5 cm³ active volume) CZT spectrometers are expected to continue. A variety of analytical and numerical techniques have been employed to quantify crystallinity, strain, impurities, compositional and stoichiometric variations, bulk and surface defect states, carrier mobilities and lifetimes, electric field distributions, and surface passivation. Data from these measurements were correlated with spatial maps of the gamma-ray and alpha particle spectroscopic response, and feedback on the effectiveness of crystal growth and detector fabrication procedures has been generated. The results of several of these analytical techniques will be presented in this paper.     

Internal electric field measurements in cadmium zinc telluride using transmission two-modulator generalized ellipsometry

Transmission two-modulator generalized ellipsometry (2-MGE) is used in conjunction with an x-y scanning lens to map the retardation, diattenuation, fast axis angle, depolarization, and circular diattenuation of a cadmium zinc telluride (CZT) crystal under applied voltage. These measurements indicate the presence of an internal electric field, which does not extend throughout the entire CZT crystal, even at the highest voltages applied. Furthermore, the voltage-induced retardation is approximately quadratic with applied voltage, and is time-dependent, with a fast component with a time constant less than 0.06 sec and a slow component with a time constant of ∼1.3 sec.     

Effect of Colloidal Silver on Optical Transmittance Characteristics of Bulk Cadmium Zinc Telluride Crystals

Colloidal silver is observed to affect the transmittance of p-type Cd_1−y Zn _y Te (CZT) single-crystal substrate material at room temperature. The optical transmittance spectra have been analyzed in the near-infrared (NIR) and mid-infrared (MIR) regions. The transmittance characteristics of CZT showed significant reduction in absorption due to split-off valance band transitions in the NIR region and intervalence band absorption in the MIR region upon coating CZT substrates with silver paste. This reduction in absorption has been explained to be due to the compensation of the acceptor defects (native and foreign). Silver atoms incorporated from the silver coating help in compensation of these defects. A similar effect on transmittance characteristics of mercury cadmium telluride (MCT) epilayers grown on CZT substrates after coating silver paste on the CZT substrate side was also observed. An improvement in the transmittance of CZT substrates after the application of silver paste was observed. A similar improvement in transmittance is usually achieved by annealing the substrates in a Cd/Zn atmosphere. The results are explained by considering the formation of neutral complexes of acceptors (cadmium vacancies) and the interstitial silver. This study also points to the important conclusion that silver paste on CZT should be applied with caution for measurement purposes since it diffuses even at room temperature and modifies the optical characteristics.     

基于机器学习的大面积拼接镜倾斜误差探测

为了实现对拼接镜整体幅面的共相位误差的快速检 测,通过Zemax建立相位测量装置,数值模拟拼接镜 的倾斜误差检测过程。使用基于主成 分分析(PCA)、偏最小二乘回归(PLSR)的机器学习算法,替代传统的相位重建方法,从 探测面强度分布图中提取倾斜误差。预测结果表明,在单元情况下对12个样本的倾斜角进行 预测,倾斜角预测值与真实值间的均方根误差(RMSE)约为0.00029;在多元情况下,倾角的 RMSE均维持在0.0003以下。可见,在两种情况下,倾角的RMSE参量值 均小于倾斜步长。因此 ,利用机器学习算法可以实现对倾角步长为0.0005°的倾斜误差的预 测,与相位差波前检测 等传统方法相比,该方法能大幅提高预测速度,明显降低传统波前重建算法复杂度。