New Efficient Algorithms for Multiplication Over Fields of Characteristic Three

In this paper, we first present an enhancement of the well-known Karatsuba 2-way and 3-way algorithms for characteristic three fields, denoted by \(\mathbb {F}_{3^{n}}\) where n≥1. We then derive a 3-way polynomial multiplication algorithm with five 1/3 sized multiplications that use interpolation in \(\mathbb {F}_{9}\). Following the computation of the arithmetic and delay complexity of the proposed algorithm, we provide the results of our hardware implementation of polynomial multiplications over \(\mathbb {F}_{3}\) and \(\mathbb {F}_{9}\). The final proposal is a new 3-way polynomial multiplication algorithm over \(\mathbb {F}_{3}\) that uses three polynomial multiplications of 1/3 of the original size over \(\mathbb {F}_{3}\) and one polynomial multiplication of 1/3 of the original size over \(\mathbb {F}_{9}\). We show that this algorithm represents about 15% reduction of the complexity over previous algorithms for the polynomial multiplications whose sizes are of practical interest.     

A 3.1–10.6 GHz UWB LNA Based on Self Cascode Technique for Improved Bandwidth and High Gain

In this work, we present a self cascode based ultra-wide band (UWB) low noise amplifier (LNA) with improved bandwidth and gain for 3.1–10.6 GHz wireless applications. The self cascode (SC) or split-length compensation technique is employed to improve the bandwidth and gain of the proposed LNA. The improvement in the bandwidth of SC based structure is around 1.22 GHz as compared to simple one. The significant enhancement in the characteristics of the introduced circuit is found without extra passive components. The SC based CS–CG structure in the proposed LNA uses the same DC current for operating first stage transistors. In the designed UWB LNA, a common source (CS) stage is used in the second stage to enhance the overall gain in the high frequency regime. With a standard 90 nm CMOS technology, the presented UWB LNA results in a gain \(\hbox {S}_{21}\) of \(20.10 \pm 1.65\,\hbox {dB}\) across the 3.1–10.6 GHz frequency range, and dissipating 11.52 mW power from a 1 V supply voltage. However, input reflection, \(\hbox {S}_{11}\), lies below \(-\,10\) dB from 4.9–9.1 GHz frequency. Moreover, the output reflection (\(\hbox {S}_{22}\)) and reverse isolation (\(\hbox {S}_{12}\)), is below \(-\,10\) and \(-\,48\) dB, respectively for the ultra-wide band region. Apart from this, the minimum noise figure (\(\hbox {NF}_{min}\)) value of the proposed UWB LNA exists in the range of 2.1–3 dB for 3.1–10.6 GHz frequency range with a a small variation of \(\pm \,0.45\,\hbox {dB}\) in its \(\hbox {NF}_{min}\) characteristics. Linearity of the designed LNA is analysed in terms of third order input intercept point (IIP3) whose value is \(-\,4.22\) dBm, when a two tone signal is applied at 6 GHz with a spacing of 10 MHz. The other important benefits of the proposed circuit are its group-delay variation and gain variation of \(\pm \,115\,\hbox {ps}\) and \(\pm \,1.65\,\hbox {dB}\), respectively.     

Ultra-Fast Current Mode Sense Amplifier for Small $$I_{\mathrm{CELL}}$$ SRAM in FinFET with Improved Offset Tolerance

In this paper, a novel, high-performance and robust sense amplifier (SA) design is presented for small \(I_\mathrm{CELLl}\) SRAM, using fin-shaped field effect transistors (FinFET) in 22-nm technology. The technique offers data-line-isolated current sensing approach. Compared with the conventional CSA (CCSA) and hybrid SA (HSA), the proposed current feed-SA (CF-SA) demonstrates 2.15\(\times \) and 3.02\(\times \) higher differential current, respectively, for \({V}_{\mathrm{DD}}\) of 0.6 V. Our results indicate that even at the worst corner, CF-SA can provide 2.23\(\times \) and 1.7\(\times \) higher data-line differential voltage compared with CCSA and HSA, respectively. Further, 66.89 and 31.47 % reductions in the cell access time are achieved compared to the CCSA and HSA, respectively, under similar \(I_\mathrm{CELLl}\) and bit-line and data-line capacitance. Statistical simulations have proved that the CF-SA provides high read yield with 32.39 and 22.24 % less \(\upsigma _{\mathrm{Delay}}\). It also offers a much better read effectiveness and robustness against the data-line capacitance as well as \({V}_{\mathrm{DD}}\) variation. Furthermore, the CF-SA is able to tolerate a large offset of the input devices, up to 80 mV at \({V}_{\mathrm{DD}}=0.6\hbox {V}\).     

Stream Ciphers: A Practical Solution for Efficient Homomorphic-Ciphertext Compression

In typical applications of homomorphic encryption, the first step consists for Alice of encrypting some plaintext m under Bob’s public key \(\mathsf {pk}\) and of sending the ciphertext \(c = \mathsf {HE}_{\mathsf {pk}}(m)\) to some third-party evaluator Charlie. This paper specifically considers that first step, i.e., the problem of transmitting c as efficiently as possible from Alice to Charlie. As others suggested before, a form of compression is achieved using hybrid encryption. Given a symmetric encryption scheme \(\mathsf {E}\), Alice picks a random key k and sends a much smaller ciphertext \(c' = (\mathsf {HE}_{\mathsf {pk}}(k), \mathsf {E}_k(m))\) that Charlie decompresses homomorphically into the original c using a decryption circuit \(\mathcal {C}_{{\mathsf {E}^{-1}}}\). In this paper, we revisit that paradigm in light of its concrete implementation constraints, in particular \(\mathsf {E}\) is chosen to be an additive IV-based stream cipher. We investigate the performances offered in this context by Trivium, which belongs to the eSTREAM portfolio, and we also propose a variant with 128-bit security: Kreyvium. We show that Trivium, whose security has been firmly established for over a decade, and the new variant Kreyvium has excellent performance. We also describe a second construction, based on exponentiation in binary fields, which is impractical but sets the lowest depth record to \(8\) for \(128\)-bit security.     

Two-channel perfect reconstruction (PR) quadrature mirror filter (QMF) bank design using logarithmic window function and spline function

In this work, two-channel perfect reconstruction quadrature mirror filter (QMF) bank has been proposed based on the prototype filter using windowing method. A novel window function based on logarithmic function along with the spline function is utilized for the design of prototype filter. The proposed window has a variable parameter ‘\(\alpha \)’, which varies the peak side lobe level and rate of fall-off side lobe level which in turn affects the peak reconstruction error (PRE) and amplitude distortion (\(e_{am}\)) of the QMF bank . The transition width of the prototype is controlled by the spline function using the parameter ‘\(\mu \)’. The perfect reconstruction condition is satisfied by setting the cutoff frequency (\(\omega _{c}\)) of the prototype low-pass filter at ‘\(\pi /2\)’. The performance of the proposed design method has been evaluated in terms of mean square error in the pass band, mean square error in the stop band, first side lobe attenuation (\(A_{1}\)), peak reconstruction error (PRE) and amplitude error (\(e_{am}\)) for different values of ‘\(\alpha \)’ and ‘\(\mu \)’. The results are provided and compared with the existing methods.     

$$\ell _{1/2,1}$$ group sparse regularization for compressive sensing

Recently, the design of group sparse regularization has drawn much attention in group sparse signal recovery problem. Two of the most popular group sparsity-inducing regularization models are \(\ell _{1,2}\) and \(\ell _{1,\infty }\) regularization. Nevertheless, they do not promote the intra-group sparsity. For example, Huang and Zhang (Ann Stat 38:1978–2004, 2010) claimed that the \(\ell _{1,2}\) regularization is superior to the \(\ell _1\) regularization only for strongly group sparse signals. This means the sparsity of intra-group is useless for \(\ell _{1,2}\) regularization. Our experiments show that recovering signals with intra-group sparse needs more measurements than those without, by the \(\ell _{1,\infty }\) regularization. In this paper, we propose a novel group sparsity-inducing regularization defined as a mixture of the \(\ell _{1/2}\) norm and the \(\ell _{1}\) norm, referred to as \(\ell _{1/2,1}\) regularization, which can overcome these shortcomings of \(\ell _{1,2}\) and \(\ell _{1,\infty }\) regularization. We define a new null space property for \(\ell _{1/2,1}\) regularization and apply it to establish a recoverability theory for both intra-group and inter-group sparse signals. In addition, we introduce an iteratively reweighted algorithm to solve this model and analyze its convergence. Comprehensive experiments on simulated data show that the proposed \(\ell _{1/2,1}\) regularization is superior to \(\ell _{1,2}\) and \(\ell _{1,\infty }\) regularization.     

Application of photonic crystal ring resonator nonlinear response for full-optical tunable add–drop filtering

In this paper, we investigate the application of Kerr-like nonlinear photonic crystal (PhC) ring resonator (PCRR) for realizing a tunable full-optical add–drop filter. We used silicon (Si) nano-crystal as the nonlinear material in pillar-based square lattice of a 2DPhC. The nonlinear section of PCRR is studied under three different scenarios: (1) first only the inner rods of PCRR are made of nonlinear materials, (2) only outer rods of PCRR have nonlinear response, and (3) both of inner and outer rods are made of nonlinear material. The simulation results indicate that optical power required to switch the state of PCRR from turn-on to turn-off, for the nonlinearity applied to inner PCRR, is at least \(2000\, \hbox {mW}{/}\upmu \hbox {m}^{2}\) and, for the nonlinearity applied to outer PCRR, is at least \(3000\, \hbox {mW}{/}\upmu \hbox {m}^{2}\) which corresponds to refractive index change of \(\Delta n_\mathrm{NL }= 0.085\) and \(\Delta n_\mathrm{NL }= 0.15\), respectively. For nonlinear tuning of add–drop filter, the minimum power required to 1 nm redshift the center operating wavelength \((\lambda _{0} = 1550\, \hbox {nm})\) for the inner PCRR scenario is \(125\, \hbox {mW}{/}\upmu \hbox {m}^{2}\) (refractive index change of \(\Delta n_\mathrm{NL}= 0.005)\). Maximum allowed refractive index change for inner and outer scenarios before switch goes to saturation is \(\Delta n_\mathrm{NL }= 0.04\) (maximum tune-ability 8 nm) and \(\Delta n_\mathrm{NL }= 0.012\) (maximum tune-ability of 24 nm), respectively. Performance of add–drop filter is replicated by means of finite-difference time-domain method, and simulations displayed an ultra-compact size device with ultra-fast tune-ability speed.     

Study on the Effect of Mn,Zn, and Sb on Undercooling Behavior of Sn-Ag-Cu Alloys Using Differential Thermal Analysis

Differential thermal analysis (DTA) has been conducted on directionally solidified near-eutectic Sn-3.0 wt.%Ag-0.5 wt.%Cu (SAC), SAC \(+\) 0.2 wt.%Sb, SAC \(+\) 0.2 wt.%Mn, and SAC \(+\) 0.2 wt.%Zn. Laser ablation inductively coupled plasma mass spectroscopy was used to study element partitioning behavior and estimate DTA sample compositions. Mn and Zn additives reduced the undercooling of SAC from 20.4\(^\circ \hbox {C}\) to \(4.9^\circ \hbox {C}\) and \(2^\circ \hbox {C}\), respectively. Measurements were performed at cooling rate of \(10^\circ \hbox {C}\) per minute. After introducing 200 ppm \(\hbox {O}_2\) into the DTA, this undercooling reduction ceased for SAC \(+\) Mn but persisted for SAC \(+\) Zn.     

Ab␣Initio Study of Aluminium Impurity and Interstitial-Substitutional Complexes in Ge Using a Hybrid Functional (HSE)

The results of an ab?initio modelling of aluminium substitutional impurity (\({\hbox {Al}}_{\rm Ge}\)), aluminium interstitial in Ge [\({\hbox {I}}_{\rm Al}\) for the tetrahedral (T) and hexagonal (H) configurations] and aluminium interstitial-substitutional pairs in Ge (\({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\)) are presented. For all calculations, the hybrid functional of Heyd, Scuseria, and Ernzerhof in the framework of density functional theory was used. Defects formation energies, charge state transition levels and minimum energy configurations of the \({\hbox {Al}}_{\rm Ge}\), \({\hbox {I}}_{\rm Al}\) and \({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\) were obtained for ?2, ?1, 0, \(+\)1 and \(+\)2 charge states. The calculated formation energy shows that for the neutral charge state, the \({\hbox {I}}_{\rm Al}\) is energetically more favourable in the T than the H configuration. The \({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\) forms with formation energies of ?2.37 eV and ?2.32 eV, when the interstitial atom is at the T and H sites, respectively. The \({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\) is energetically more favourable when the interstitial atom is at the T site with a binding energy of 0.8 eV. The \({\hbox {I}}_{\rm Al}\) in the T configuration, induced a deep donor (\(+\)2/\(+1\)) level at \(E_{\mathrm {V}}+0.23\) eV and the \({\hbox {Al}}_{\rm Ge}\) induced a single acceptor level (0/?1) at \(E_{\mathrm {V}}+0.14\) eV in the band gap of Ge. The \({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\) induced double-donor levels are at \(E_{\rm V}+0.06\) and \(E_{\rm V}+0.12\) eV, when the interstitial atom is at the T and H sites, respectively. The \({\hbox {I}}_{\rm Al}\) and \({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\) exhibit properties of charge state-controlled metastability.     

Performance Analysis of a Low Profile Hybrid Antenna for Broadband Applications

In this paper, a low profile dielectric resonator antenna (DRA) is proposed and investigated. To achieve the broad impedance bandwidth the proposed antenna geometry combines the dielectric resonator antenna and an underlying microstrip-fed slot with a narrow rectangular notch, which effectively broadens the impedance bandwidth by merging the resonances of slot and DRA. The physical insight gained by the detailed parametric study has led to find out a set of guidelines for designing the antennas for any particular frequency band. The design guidelines have been verified by simulating a set of antennas designed for different frequency bands. For validation, a prototype antenna is fabricated and tested experimentally. The measured results show that the proposed DRA offers an impedance bandwidth of about \(125.34\%\) from 1.17 to 5.1 GHz with reasonable gain between 3.5 and 5.7 dBi. The volume of the proposed DRA is \(0.16\lambda _{dr}^{3}\), where \(\lambda _{dr}\) is the wavelength at center operating frequency of the DR. A comprehensive study on bandwidth shows that the proposed DRA provides maximum bandwidth in terms of the DR volume (\(\hbox {BW}/V_{dr}\)) and the DR height (\(\hbox {BW}/h_{dr}\)) than the other similar reported work on hybrid wideband DRA designs.     

Secret-Sharing Schemes for Very Dense Graphs

A secret-sharing scheme realizes a graph if every two vertices connected by an edge can reconstruct the secret while every independent set in the graph does not get any information on the secret. Similar to secret-sharing schemes for general access structures, there are gaps between the known lower bounds and upper bounds on the share size for graphs. Motivated by the question of what makes a graph “hard” for secret-sharing schemes (that is, they require large shares), we study very dense graphs, that is, graphs whose complement contains few edges. We show that if a graph with \(n\) vertices contains \(\left( {\begin{array}{c}n\\ 2\end{array}}\right) -n^{1+\beta }\) edges for some constant \(0 \le \beta <1\), then there is a scheme realizing the graph with total share size of \(\tilde{O}(n^{5/4+3\beta /4})\). This should be compared to \(O(n^2/\log (n))\), the best upper bound known for the total share size in general graphs. Thus, if a graph is “hard,” then the graph and its complement should have many edges. We generalize these results to nearly complete \(k\)-homogeneous access structures for a constant \(k\). To complement our results, we prove lower bounds on the total share size for secret-sharing schemes realizing very dense graphs, e.g., for linear secret-sharing schemes, we prove a lower bound of \(\Omega (n^{1+\beta /2})\) for a graph with \(\left( {\begin{array}{c}n\\ 2\end{array}}\right) -n^{1+\beta }\) edges.     

Stabilization of Discrete-time Fuzzy Systems Via Delta Operators and its Application to Truck–Trailer Model

This paper addresses the problem of robust \(L_2{-}L_\infty \) control in delta domain for a class of Takagi–Sugeno (TS) fuzzy systems with interval time-varying delays and disturbance input. In particular, the system under study involves state time delay, uncertainties and fast sampling period \(\mathcal {T}\). The main aim of this work was to design a \(L_2{-}L_\infty \) controller such that the proposed TS fuzzy system is robustly asymptotically stable with a \(L_2{-}L_\infty \) prescribed performance level \(\gamma >0\). Based on the proper Lyapunov–Krasovskii functional (LKF) involving lower and upper bound of time delay and free-weighting technique, a new set of delay-dependent sufficient conditions in terms of linear matrix inequalities (LMIs) are established for obtaining the required result. The result reveals that the asymptotic stability is achieved quickly when the sampling frequency is high. Finally, a numerical example based on the truck–trailer model is given to demonstrate the effectiveness and potential of the proposed design technique.     

A Low-Voltage Fully Differential Pure Current Mode Current Operational Amplifier

In this paper a novel high-frequency fully differential pure current mode current operational amplifier (COA) is proposed that is, to the authors’ knowledge, the first pure MOSFET Current Mode Logic (MCML) COA in the world, so far. Doing fully current mode signal processing and avoiding high impedance nodes in the signal path grant the proposed COA such outstanding properties as high current gain, broad bandwidth, and low voltage and low-power consumption. The principle operation of the block is discussed and its outstanding properties are verified by HSPICE simulations using TSMC \(0.18\,\upmu \hbox {m}\) CMOS technology parameters. Pre-layout and Post-layout both plus Monte Carlo simulations are performed under supply voltages of \(\pm 0.75\,\hbox {V}\) to investigate its robust performance at the presence of fabrication non-idealities. The pre-layout plus Monte Carlo results are as; 93 dB current gain, \(8.2\,\hbox {MHz}\,\, f_{-3\,\text {dB}}, 89^{\circ }\) phase margin, 137 dB CMRR, 13 \(\Omega \) input impedance, \(89\,\hbox {M}\Omega \) output impedance and 1.37 mW consumed power. Also post-layout plus Monte Carlo simulation results (that are generally believed to be as reliable and practical as are measuring ones) are extracted that favorably show(in abovementioned order of pre-layout) 88 dB current gain, \(6.9\,\hbox {MHz} f_{-3\text {db}} , 131^{\circ }\) phase margin and 96 dB CMRR, \(22\,\Omega \) input impedance, \(33\,\hbox {M}\Omega \) output impedance and only 1.43 mW consumed power. These results altogether prove both excellent quality and well resistance of the proposed COA against technology and fabrication non-idealities.     

Correction to: A subthreshold low-power CMOS LC-VCO with high immunity to PVT variations

This paper presents a capacitor-free low dropout (LDO) linear regulator based on a dual loop topology. The regulator utilizes two feedback loops to satisfy the challenges of hearing aid devices, which include fast transient performance and small voltage spikes under rapid load-current changes. The proposed design works without the need of a decoupling capacitor connected at the output and operates with a 0–100 pF capacitive load. The design has been taped out in a \(0.18\,\upmu \hbox {m}\) CMOS process. The proposed regulator has a low component count, area of \(0.012\, \hbox {mm}^2\) and is suitable for system-on-chip integration. It regulates the output voltage at 0.9 V from a 1.0–1.4 V supply. The measured results for a current step load from 250 to 500 \(\upmu \hbox {A}\) with a rise and fall time of \(1.5\,\upmu \hbox {s}\) are an overshoot of 26 mV and undershoot of 26 mV with a settling time of \(3.5\,\upmu \hbox {s}\) when \({C_L}\) between 0 and 100 pF. The proposed LDO regulator consumes a quiescent current of only \(10.5\,\upmu \hbox {A}\). The design is suitable for application with a current step edge time of 1 ns while maintaining \(\Delta V_{out}\) of 64 mV.     

Error performance of optically preamplified hybrid BPSK-PPM systems with transmitter and receiver imperfections

In this paper, we investigate the impact of the transmitter finite extinction ratio and the receiver carrier recovery phase offset on the error performance of two optically preamplified hybrid M-ary pulse position modulation (PPM) systems with coherent detection. The first system, referred to as PB-mPPM, combines polarization division multiplexing (PDM) with binary phase-shift keying and M-ary PPM, and the other system, referred to as PQ-mPPM, combines PDM with quadrature phase-shift keying and M-ary PPM. We provide new expressions for the probability of bit error for PB-mPPM and PQ-mPPM under finite extinction ratios and phase offset. The extinction ratio study indicates that the coherent systems PB-mPPM and PQ-mPPM outperform the direct-detection ones. It also shows that at \(P_b=10^{-9}\) PB-mPPM has a slight advantage over PQ-mPPM. For example, for a symbol size \(M=16\) and extinction ratio \(r=30\) dB, PB-mPPM requires 0.6 dB less SNR per bit than PQ-mPPM to achieve \(P_b=10^{-9}\). This investigation demonstrates that PB-mPPM is less complex and less sensitive to the variations of the offset angle \(\theta \) than PQ-mPPM. For instance, for \(M=16\), \(r=30\) dB, and \(\theta =10^{\circ }\) PB-mPPM requires 1.6 dB less than PQ-mPPM to achieve \(P_b=10^{-9}\). However, PB-mPPM enhanced robustness to phase offset comes at the expense of a reduced bandwidth efficiency when compared to PQ-mPPM. For example, for \(M=2\) its bandwidth efficiency is 60 % that of PQ-mPPM and \(\approx 86\,\%\) for \(M=1024\). For these reasons, PB-mPPM can be considered a reasonable design trade-off for M-ary PPM systems.     

Design and Performance Study of Dynamic Fractors in Any of the Four Quadrants

A fractor is a simple fractional-order system. Its transfer function is \(1/Fs^{\alpha }\); the coefficient, F, is called the fractance, and \(\alpha \) is called the exponent of the fractor. This paper presents how a fractor can be realized, using RC ladder circuit, meeting the predefined specifications on both F and \(\alpha \). Besides, commonly reported fractors have \(\alpha \) between 0 and 1. So, their constant phase angles (CPA) are always restricted between \(0^{\circ }\) and \(-90^{\circ }\). This work has employed GIC topology to realize fractors from any of the four quadrants, which means fractors with \(\alpha \) between \(-\)2 and +2. Hence, one can achieve any desired CPA between \(+180^{\circ }\) and \(-180^{\circ }\). The paper also exhibits how these GIC parameters can be used to tune the fractance of emulated fractors in real time, thus realizing dynamic fractors. In this work, a number of fractors are developed as per proposed technique, their impedance characteristics are studied, and fractance values are tuned experimentally.     

High-Accuracy Time-Mode Duty-Cycle-Modulation-Based Temperature Sensor for Energy-Efficient System Applications

This paper presents a new time-mode duty-cycle-modulation-based high-accuracy temperature sensor. Different from the well-known \({\varSigma }{\varDelta }\) ADC-based readout structure, this temperature sensor utilizes a temperature-dependent oscillator to convert the temperature information into temperature-related time-mode parameter values. The useful output information of the oscillator is the duty cycle, not the absolute frequency. In this way, this time-mode duty-cycle-modulation-based temperature sensor has superior performance over the conventional inverter-chain-based time domain types. With a linear formula, the duty-cycle output streams can be converted into temperature values. The design is verified in 65nm standard digital CMOS process. The verification results show that the worst temperature inaccuracy is kept within 1\(\,^{\circ }\mathrm{C}\) with a one-point calibration from \(-\)55 to 125 \(^{\circ }\mathrm{C}\). At room temperature, the average current consumption is only 0.8 \(\upmu \)A (1.1\(\,\upmu \)A in one phase and 0.5 \(\upmu \)A in the other) with 1.2 V supply voltage, and the total energy consumption for a complete measurement is only 0.384 \({\hbox {nJ}}\).     

Electrical Transport Mechanisms and Photoconduction in Undoped Crystalline Flash-Evaporated Lead Iodide Thin Films

The flash-evaporation technique was utilized to fabricate undoped 1.35-μm and 1.2-μm thick lead iodide films at substrate temperatures \( T_{\rm{s}} = 150 \)°C and 200°C, respectively. The films were deposited onto a coplanar comb-like copper (Cu-) electrode pattern, previously coated on glass substrates to form lateral metal–semiconductor–metal (MSM-) structures. The as-measured constant-temperature direct-current (dc)-voltage (\( I\left( {V;T} \right) - V \)) curves of the obtained lateral coplanar Cu-PbI₂-Cu samples (film plus electrode) displayed remarkable ohmic behavior at all temperatures (\( T = 18 - 90\,^\circ {\hbox{C}} \)). Their dc electrical resistance \( R_{\rm{dc}} (T \)) revealed a single thermally-activated conduction mechanism over the temperature range with activation energy \( E_{\rm{act}} \approx 0.90 - 0.98 \,{\hbox{eV}} \), slightly less than half of room-temperature bandgap energy \( E_{\rm{g}} \) (\( \approx \,2.3\, {\hbox{eV}} \)) of undoped 2H-polytype PbI₂ single crystals. The undoped flash-evaporated \( {\hbox{PbI}}_{\rm{x}} \) thin films were homogeneous and almost stoichiometric (\( x \approx 1.87 \)), in contrast to findings on lead iodide films prepared by other methods, and were highly crystalline hexagonal 2H-polytypic structure with c-axis perpendicular to the surface of substrates maintained at \( T_{\rm{s}} { \gtrsim }150^\circ {\hbox{C}} \). Photoconductivity measurements made on these lateral Cu-PbI₂-Cu-structures under on–off visible-light illumination reveal a feeble photoresponse for long wavelengths (\( \lambda > 570\,{\hbox{nm}} \)), but a strong response to blue light of photon energy \( E_{\rm{ph}} \) \( \approx \,2.73 \, {\hbox{eV}} \) (\( > E_{\rm{g}} \)), due to photogenerated electron–hole (e–h) pairs via direct band-to-band electronic transitions. The constant-temperature/dc voltage current–time \( I\left( {T,V} \right) - t \) curves of the studied lateral PbI₂ MSM-structures at low ambient temperatures (\( T < 50^\circ {\hbox{C}} \)), after cutting off the blue-light illumination, exhibit two trapping mechanisms with different relaxation times. These strongly depend on \( V \) and \( T \), with thermally generated charge carriers in the PbI₂ mask photogenerated (e–h) pairs at higher temperatures.     

A fast-settling charge-pump PLL with constant loop bandwidth

A fully integrated fast-settling Fractional-N phase-locked loop (PLL) is presented. Based on the \(\Delta \varSigma\) modulator and I/Q generator architectures, the frequency synthesizer covers a frequency range of 130 MHz-1 GHz with a 3-KHz channel step. The constant loop bandwidth over the above tuning frequency ranges is achieved without modifying low pass filter parameters. The current of charge pump \(Icp\) is programmed not only to compensate the variation of voltage-controlled oscillator gain \(Kvco\), but also for adapting to the change of divider ratio \(N_{m}\). This calibration process is carried out in an open-loop condition for a small settling time. The proposed synthesizer was fabricated in 0.18 µm CMOS process. The measurement results show that the whole synthesizer PLL draws 11.3-mA including I/Q generator from 1.8 V supply. The out-of-band phase noise is ? 123 dBc/Hz@10 MHz with a 433 MHz carrier frequency after the divider. The normalized \(\left( {Icp*Kvco} \right)/N_{m}\) which is equivalent to the variation of PLL loop bandwidth ranges from ? 6 to 6%.