基于R-4B掺杂的黄色OLED器件的制备及性能优化

通过引入新型红光材料R-4B和绿光材料Ir(ppy)2acac混合来实现黄光显示.器件结构为ITO/MoO3(40nm)/NPB(40nm)/TCTA(10nm)/CBP:R-4B(x):Ir(ppy)2acac(8%)(30nm)/BCP(10nm)/Alq3(40nm)/LiF(1nm)/Al(100nm),其中x=1%、2%、3%,通过讨论掺杂浓度对器件性能的影响,得到如下结论:随着红光掺杂比例的增加,红光光强增加,发光颜色由绿色逐渐转变为黄色,但是器件整体的效率、亮度下降.当x=3%时,红光光强不再增加.综合考虑器件性能,发现当红光掺杂比例为2%时,黄色磷光OLED的性能相对最好,色坐标为(0.43 0.53),发光亮度可达4 000cd/m2,在电压为5V时,效率可达32cd/A.     

锌金属配合物BFHQZn的白色有机电致发光器件

利用新型荧光染料2-溴-4-氟苯乙烯-8-羟基喹啉锌(BFHQZn,(E)-2-(2-bromo-4-fluorostyryl)quinolato-Zinc)的电致发光(EL)特性,制备了非掺杂型的有机电致白光器件(WOLED)。器件的结构为ITO/CuPc(10nm)/NPBX(25 nm)/BFHQZn(18 nm)/NPBX(xnm)/BCP(10 nm)/Alq3((47-x)nm)/LiF(0.5 nm)/Al,当x为12时,得到了色度最好和效率最大的WOLED,最大电流效率为1.11 cd/A(at 10 V),最大的亮度为817 cd/m2(at 15 V),当驱动电压从7 V(启亮)升高到15 V(最高亮度)时,器件色坐标由(0.32,038)改变为(0.30,0.28)。     

基于MCzHQZn的有机电致发光器件

通过结构为ITO/2T-NATA(20nm/NPBx(20nm)/MCzHQZn(30nm)/BCP(10nm)/Alq3(20nm)/LiF(0.5nm)/Al、ITO/2T-NATA(30nm/MCzHQZn(30nm)/BCP(10nm)/Alq3(30nm)/LiF(0.5nm)/Al和ITO/2T-NATA(20nm/MCzHQZn(30nm)/NPBx(16nm)/BCP(10nm)/Alq3(25nm)/LiF(0.5nm)/Al的3组有机电致发光器件(OLED),证明了MCzHQZn既具有空穴传输特性,又具有较好的发光特性。MCzHQZn在器件1中作发光层,器件最大亮度在电压16V时达到3692cd/m2,电压13V时的最大效率为0.90cd/A,发光的峰值波长为564nm;MCzHQZn在器件2中既作发光层又作空穴传输层,器件最大亮度在电压为13V时达到1929cd/m2,电压12V时的最大效率为0.57cd/A,发光的峰值波长也为564nm;MCzHQZn在器件3中作空穴传输层,由NPBx作发光层,器件最大亮度在电压为14V时达到3556cd/m2,电压9V时的最大效率为1.08cd/A,...     

NPB层嵌入MgF_2超薄层对OLED性能的影响

将MgF2超薄层嵌入有机电致发光器件(OLED)的空穴传输层NPB中,制备了结构为ITO/NPB(10nm)/MgF2(xnm)/NPB(20nm)/Alq3(30nm)/Al(30nm)的一系列OLED。测试结果表明,合适厚度的MgF2可有效降低器件启亮电压,提高器件的发光效率。MgF2厚度为0.5nm的器件启亮电压只有2.3V,较未嵌入MgF2器件降低2V;MgF2厚度为1.0nm的器件最大电流效率达到3.93cd/A,最大光功率效率达到1.58lm/W,较未嵌入MgF2器件分别提高95%和110%。     

不同AlQ厚度黄光OLEDs的研究

制备了一种新型的黄光器件,其结构为：ITO/2T-NATA（15 nm）/NPB（50 nm）/ADN（20 nm）：2%DCJTB：2%TBPe/Al Q（x）/LiF（5 nm）/Al（100 nm）（x=10 nm,15 nm,20nm,25 nm,30 nm）,通过对不同Al Q厚度的黄光器件的性能如发光光谱、效率、亮度-电压曲线进行比较发现Al Q厚度为20 nm时,发光强度、效率和亮度都是最好的,而发光颜色几乎不发生改变.     

CoFe_2O_4/Ba_(0.8)Sr_(0.2)TiO_3异质结磁电复合薄膜的制备与多铁性能

利用射频磁控溅射法在Pt(200)/TiO_2/SiO_2/Si衬底上沉积CoFe_2O_4/Ba_(0.8)Sr_(0.2)TiO_3异质结层状磁电复合薄膜(Ba_(0.8)Sr_(0.2)TiO_3作为底层,CoFe_2O_4作为顶层)。X射线衍射表明CoFe_2O_4/Ba_(0.8)Sr_(0.2)TiO_3异质结复合薄膜是多晶的,由钙钛矿Ba_(0.8)Sr_(0.2)TiO_3相和尖晶石Co Fe2O4相组成。场发射扫描电镜表明在CoFe_2O_4薄膜和Ba_(0.8)Sr_(0.2)TiO_3薄膜之间有明显的界面。复合薄膜的介电常数随频率的变化关系显示了介电色散。复合薄膜表现为良好的铁电性和铁磁性共存。另外,复合薄膜具有直接的磁电耦合效应,磁电电压系数αE先随着偏置磁场Hdc的增大而增大,当偏置磁场Hdc增加到5.6 k Oe,复合薄膜达到最大的磁电电压系数,其值αE=8.7 m V/(cm·Oe),然后随着偏置磁场Hdc的进一步增大,磁电电压系数αE反而减小。     

利用Ir(ppy)_3敏化CzHQZn提高OLED的性能

用CzHQZn作为受主,利用磷光敏化的方法制备了有机电致黄光和白光器件。黄光器件采用Ir(ppy)3掺杂4,4-N,N′-=咔唑基联苯(CBP),敏化新的黄光材料CzHQZn作为发光层,当发光层厚度为18nm时器件性能最好,最大发光效率为3.26cd/A(at10V),最大发光亮度为17560cd/m2(at10V);白光器件采用多发光层结构,结合ADN的蓝光复合发光,同时加入了电子阻挡层(NPBX)和空穴阻挡层(BCP),获得的白光器件最大发光效率为2.94cd/A(at8V),最大亮度为11089cd/m2(at13V)。     

La1-xZnxMnO3和LaL2/3 Sr(1-x)/3 Znx/3 MnO3的磁电输运特性

用固相反应方法制备La1-xZnxMnO3和La2/3Sr(1-x)/3Znx/3MnO3化合物.La1-xZn MnO3在不同掺杂浓度x的研究表明:Zn2 在一定浓度范围内掺杂,具有钙钛矿结构,但掺杂浓度在50%～70%时有ZnO衍射峰,其电阻率在100 K以上随温度而下降,当掺杂浓度为x=0.3时电阻率最低.当Zn2 和Sr2 共掺而保持La3 浓度不变,即载流子浓度不变,维持Mn3 /Mn4 =2∶1,随Zn2 掺杂浓度增大,铁磁-顺磁转变温度降低,磁阻效应增大.低场磁阻效应与Zn2 掺杂浓度无关,而与温度有关;高场磁阻效应随掺杂浓度增大而增大.     

酞菁铜薄膜光电晶体管的制备与特性

无机光敏器件难于做成大面积光电传感器,且其生产成本高、工艺复杂,而有机光敏器件多采用二极管或平面场效应三极管结构,导致光电流增益小或驱动电压较大.针对这些问题,提出一种新的器件结构.采用真空蒸镀和溅射的方法,制备了结构为氧化铟锡(ITO)/酞菁铜(Cu Pc)/铝(Al)/酞菁铜(Cu Pc)/铜(Cu)的有机光电晶体管.对器件的光电特性进行了测试分析,结果显示晶体管的I-V特性表现出显著的不饱和特性和光敏特性.当发射极集电极偏压为3 V时,器件无光照时电流放大系数为16.5,当625 nm光照射时的电流放大系数为266.2.     

VO2纳米粉体与纳米晶功能陶瓷的制备与特性

热解(NH4)5[(VO)6(CO3)4(OH)9]@10H2O晶体前驱体.可制得粒径可控为10～60 nm、VO1.950±x～VO2.050±x(x＜0.005)整比性可控的无定形态、准结晶态或结晶态、颗粒均匀、呈球形的VO2纳米粉体.VO2纳米粉体烧结成粒径＜400nm,比值ρs/ρM可达103数量级跳变的VO2纳米晶陶瓷.随缺氧的增加,Tc和ρs/ρM比值降低,晶胞的a,c轴和体积V都随之减小.烧结温度过高,陶瓷出现V8O15杂相,杂相严重降低陶瓷的性能.     

Microstructures and magnetic properties of [SiO2/FePt]5/Ag thin films

[SiO2/FePt]5/Ag thin films were deposited by RF magnetron sputtering on the glass substrates and post annealing at 550 ℃ for 30 min in vacuum. Vibrating sample magnetometer and X-ray diffraction analyser were applied to study the magnetic properties and microstructures of the films. The results show that without Ag underlayer [SiO2/FePt]5 films deposited onto the glass are FCC disordered; with the addition of Ag underlayer [SiO]FePt]5/Ag films are changed into L10 and （111） mixed texture. The variation of the SiO2 nonmagnetic layer thickness in [SiO2/FePt]5/Ag films indicates that SiO2-doping plays an important role in improving the order parameter and the perpendicular magnetic anisotropy, and reducing the grain size and intergrain interactions. By controlling SiO2 thickness the highly perpendicular magnetic anisotropy can be obtained in the [SiO2 （0.6 nm）/FePt （3 nm）]5/Ag （50 nm） films and highly （001）-oriented films can be obtained in the [SiO2 （2 nm）/FePt （3 nm）]5/Ag （50 nm） films.     

空穴传输层厚度对OLED性能的影响

该文采用聚乙烯基咔唑(PVK)作为空穴传输层,8-羟基喹啉铝(Alq3)作为发光层,制备了结构为ITO/PVK (0~60nm)/Alq3(60 nm)/Mg:Ag/Al的有机发光二极管。通过测试器件的电流-电压-发光亮度特性,研究了空穴传输层厚度对有机发光二极管器件性能的影响,优化了器件功能层的厚度匹配。实验结果表明,有机发光二极管的光电性能与空穴传输层的厚度密切相关,当空穴传输层厚度为15 nm时,有机发光二极管器件具有最低的起亮电压、最高的发光亮度和最大的发光效率。     

有机负荷对ABR同步脱除SO2-4和NO3-的影响

为研究有机负荷变化对同步去除SO2-4和NO3-的影响及确定合适ρ(COD)/ρ(SO2-4)的范围,采用四格室厌氧折板式反应器处理人工配水.反应器在tHR=48 h、pH值≥6、温度为(34±1)℃的条件下运行.实验采用逐步提升进水COD质量浓度的方式提高有机负荷,3个阶段的进水COD质量浓度分别为5、6、7 g/L.实验结果表明:提高进水有机负荷,并不影响SO2-4和NO3-的去除率,SO2-4和NO3-的去除率可达96.5％和97.8％.当ρ(COD)/ρ(SO2-4)>14时,SO2-4去除率可达90％以上.厌氧折板式反应器(ABR)可根据进水污染物浓度调整各格室的微生物种群分布,具有较强的抗冲击负荷能力,但是恢复期较长,超过30 d.随着有机负荷的提高,甲烷体积分数由40％提升到90％,反应器中以利用乙酸为主的产甲烷菌占优势转变为同时利用乙酸和H2/CO2的2个生理类群.     

Organic light emitting diodes with p-Si anodes and semitransparent Ce/Au cathodes

The Ce (x nm)/Au (15 nm) stacked layers were used as semitransparent cathodes in the top-emission organic light emitting devices (TOLEDs) fabricated on a p-type silicon anodes and substrate, where x varies from 4 to 16. The consequence of the Ce layer thickness on transmittance and the device performance were studied when the organic layers NPB (60 nm)/ALQ (60 nm) were kept unchanged, where NPB was N, N′-bis-(1-naphthl)-diphenyl-1, 1′-biphenyl-4, 4′-diamine, and AlQ is tris-(8-hydroxyquinoline) aluminum. The cathode of Ce (11 nm)/Au (15 nm) has a transparency of 46%, and the TOLED with it achieves the highest luminescence efficiencies: a current efficiency of 0.91 cd/A at 13.7 V and a peak power efficiency of 0.28 lm/W at 9 V. The turn-on voltage is 3.0 V. The Ce/Au cathode is both chemically and electrically stable.     

Influence of Si buffer layer on the giant magnetoresistance effect in Co/Cu/Co sandwiches

The Co/Cu/Co sandwiches with a semiconductor Si buffer layer were prepared by high vacuum electron-beam evaporation. The influence of the Si buffer layer with different thickness on the giant magnetoresistance (GMR) effect in the Co/Cu/Co sandwiches was investigated. It was found that the GMR showed an obvious anisotropy when the thickness of Si buffer layer was larger than or equal to 0.9 nm, and that the GMR was basically isotropic with an Si buffer layer thinner than 0.9 nm. The anisotropic behavior of GMR can be ascribed to the in-plane magnetic anisotropy in the sandwiches. Due to the interdiffusion at the Si buffer/Co interface, a Co2Si interface layer with a good (301) texture formed and induced the in-plane magnetic anisotropy in the sandwiches. The dependence of the crystalline texture of the sandwiches on the thickness of Si buffer layer was also studied.     

Magnetic property and interlayer segregation in spin valve metal multilayers

The experimental results show that the exchange coupling field of NiFe/FeMn for Ta/ NiFe/FeMn/Ta multilayers is higher than that for the spin valve multilayers Ta/NiFe/Cu/NiFe/FeMn/ Ta. In order to find out the reason, the composition and chemical states at the surfaces of Ta( 12nm)/ NiFe(7nm), Ta( 12nm)/NiFe(7nm)/Cu(4nm) and Ta( 12nm)/NiFe(7nm)/Cu(3nm)/NiFe(5nm) were studied using the X-ray photoelectron spectroscopy (XPS). The results show that no elements from lower layers float out or segregate to the surface for the first and second samples. However, Cu atoms segregate to the surface of Ta(12nm)/NiFe(7nm)/Cu(3nm)/NiFe(5nm) multilayers, i.e. Cu atoms segregate to the NiFe/FeMn interface for Ta/NiFe/Cu/NiFe/FeMn/Ta multilayers. We believe that the presence of Cu atoms at the interface of NiFe/FeMn is one of the important factors causing the exchange coupling field of Ta/NiFe/FeMn/Ta multilayers to be higher than that of Ta/NiFe/Cu/NiFe/ FeMn/Ta multilayers.     

Microstructure and magnetic properties of FePt/MgO multilayers deposited by RF magnetron sputtering

FePt (50 nm) and [FePt(a nm)/MgO(b nm)]5/glass (a=1, 2, 3; b=1, 2, 3) films were prepared by radio frequency (RF) magnetron sputtering technique, and then were annealed at 600°C for 30 min. The effect of MgO layer thickness on the structures and magnetic properties of the FePt/MgO multilayers was investigated. The coercivities and inter-grain interactions of the FePt/MgO films were decreased, yet the degree of (001) texturing drastically increased with the increase in MgO layer thickness when the FePt layer thickness was fixed. Thus, the FePt/MgO films with appropriate coercivities, high perpendicular anisotropy, and weak in-ter-grain interactions were obtained by controlling the MgO layer thickness. Overall, these results indicate that the FePt/MgO nanos-tructured films are promising candidates for future high-density perpendicular recording media.     

电流对三维电极生物膜耦合硫自养脱氮工艺的影响

针对污水处理厂尾水TN去除问题,研究了电流对三维电极生物膜耦合硫自养脱氮工艺(3DBER-S)脱氮性能及菌群结构的影响.运行结果表明:在进水pH为7.0~7.5,ρ(NO_3~--N)为35 mg/L,ρ(C)/ρ(N)为1,HRT为12h条件下,电流由60 mA增大到800 mA,NO_3~--N和TN去除率变化不明显,分别稳定在87%和76%左右;随电流增大,体系氢自养反硝化作用所占比例由22.8%逐渐上升到74.4%.基于nirS基因的克隆文库结果表明:3DBER-S中与异养、硫自养和氢自养反硝化功能菌属相似的细菌均占有一定比例;随电流增大,与氢自养反硝化功能菌属相似的细菌所占比例增大.该体系中存在异养、氢自养和硫自养反硝化协同去除硝酸盐氮的作用,维持了稳定高效的脱氮效果,且增大电流利于氢自养反硝化作用的增强.     

利用小空间厌氧移动床还原硫酸盐的试验研究

为了强化硫酸盐还原反应器的还原效能,利用小空间厌氧移动床生物膜反应器,研究了反应温度、进水pH、水力停留时间( hydraulic retention time,HRT)、ρ( COD)/ρ( SO2-4)和回流比对SO2-4还原效果的影响,从而考察反应器还原SO2-4的效能及在高负荷条件下稳定运行状况.研究结果表明：温度35℃、进水pH=7.0、ρ( COD)/ρ( SO2-4)=2.5、HRT=8 h和回流比=4：1为反应器运行的最佳工况条件;进水SO2-4质量浓度在1500~2500 mg/L时,SO2-4的还原率保持在78.77%~88.89%,SO2-4的还原速率最高达5.90 kg/(m3·d),表明反应器具有较强的SO2-4还原能力;在进水SO2-4质量浓度为2250 mg/L左右时,连续运行20 d,SO2-4还原率达87.13%并能稳定运行.