Influence of an In2O3 buffer layer on the properties of ITO thin films

In the present study, an indium oxide (In₂O₃) thin film was deposited as a buffer layer between ITO (indium tin oxide) and PES (polyestersulfone) by RF (radio frequency) magnetron sputtering at room temperature, and X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) were conducted to characterise the structural variation. The random texture of the ITO/In₂O₃ multilayered film favoured the (2 2 2) crystallographic plane rather than the (4 0 0) plane, which was favoured in single-layer ITO films. Transmission electron microscopy (TEM) observations further indicated that the buffer layer of In₂O₃ film was amorphous, while the ITO film was characterised by a columnar structure that was oriented perpendicular to the substrate surface. The electrical and optical properties of ITO/In₂O₃ multilayered films were enhanced due to the superior crystallinity and larger grain size of the material, as observed by XRD and FESEM. The multilayered film presented an electrical resistivity of 3.1 × 10⁻⁴ Ω cm, which is significantly better than that of a single-layer ITO film without an In₂O₃ buffer layer (4.7 × 10⁻⁴ Ω cm). In addition, optical transmission through the multilayered film increased by 2-4% due to the widening of the band gap by 0.2 eV, which was attributed to a Burstin-Moss shift.     

Negative thermal expansion and shift in phase transition temperature in Mo-substituted ZrW2O8 thin films prepared by pulsed laser deposition

Mo-substituted ZrW₂O₈ (ZrW_1.1Mo_0.9O₈) thin films have been deposited on quartz substrates by the pulsed laser deposition (PLD) method. The effects of oxygen pressure, substrate temperature and annealing temperature on the morphologies and phase compositions of the ZrW_1.1Mo_0.9O₈ thin films were systematically investigated using X-ray diffraction (XRD) and scanning electron microscope (SEM). The negative thermal expansion and shift in phase transition temperature in cubic ZrW_1.1Mo_0.9O₈ thin films were characterized using high temperature X-ray diffraction. The results indicate that as-deposited ZrW_1.1Mo_0.9O₈ thin films show amorphous phases. Crystallized cubic ZrW_1.1Mo_0.9O₈ thin films were prepared by heating at 1050 °C for 7 min. The growth of the ZrW_1.1Mo_0.9O₈ thin films was strongly influenced by the substrate temperature and oxygen pressure. The ZrW_1.1Mo_0.9O₈ thin film deposited at 500 °C with an oxygen pressure of 10 Pa was smooth and compact, and its thickness was about 720 nm. The high temperature X-ray diffraction analyses demonstrated that the cubic ZrW_1.1Mo_0.9O₈ thin film exhibited strong negative thermal expansion and its thermal expansion coefficient was calculated to be −8.65×10⁻⁶ K⁻¹ from 100 °C to 600 °C. The substitution of Mo in ZrW₂O₈ thin film leads to a remarkable decrease in phase transition temperature, with the α to β structure phase transition occurring below 100 °C. However, with increased testing temperature, the substitution results in part of the cubic ZrW_1.1Mo_0.9O₈ thin film gradually changing into a trigonal phase.     

Nanocrystalline In2O3-SnO2 thick films for low-temperature hydrogen sulfide detection

Nanocrystalline In₂O₃-SnO₂ thick films were fabricated using the screen-printing technique and their responses toward low concentrations of H₂S in air (2-150 ppm) were tested at 28-150 °C. The amount of In₂O₃-loading was varied from 0 to 9 wt.% of SnO₂ and superb sensing performance was observed for the sensor loaded with 7 wt.% In₂O₃, which might be attributed to the decreased crystallite size as well as porous microstructure caused by the addition of In₂O₃ to SnO₂ without structural modification. The interfacial barriers between In₂O₃ and SnO₂ might be another major factor. Typically, the response of 7 wt.% In₂O₃-loaded SnO₂ sensor toward 100 ppm of H₂S was 1481 at room temperature and 1921 at optimal operating temperature (40 °C) respectively, and showed fast and recoverable response with good reproducibility when operated at 70 °C, which are highly attractive for the practical application in low-temperature H₂S detection.     

Electrochemical anticorrosion performance evaluation of Al2O3 coatings deposited by MOCVD on an industrial brass substrate

Alumina (Al₂O₃) coatings of different thickness were deposited on OT59 brass substrate (BS) using the metal organic chemical vapour deposition (MOCVD) technique to evaluate the corrosion performance by EIS measurements. The used precursor was dimethyl-aluminium-isopropoxide. Electrochemical characterizations of the deposited films were performed in a standard very aggressive acidic solution (aerated 1N H₂SO₄ at 25 °C up to 168 h of immersion time) by means of direct current method (Tafel curves) and electrochemical impedance spectroscopy (EIS). The Rutherford backscattering spectroscopy (RBS) indicated that the films are very pure with the correct Al₂O₃ stoichiometry, while the IR absorption spectra showed that the films did not contain any OH groups. The surface film morphology was investigated by atomic force microscopy (AFM) and displayed a globular texture. The films were very smooth, with a maximum root mean square roughness, for example, of 14 nm for a 0.96 μm thick coating. The EIS data confirmed, as expected, that a 2.40 μm Al₂O₃ layer ensures the best corrosion protection after 168 h of immersion in the very acidic environment used.     

The influence of preparation conditions on electrochemical properties of LiNi0.5Mn1.5O4 thin film electrodes by PLD

LiNi_0.5Mn_1.5O₄ thin films were prepared by pulsed laser deposition (PLD) on stainless steel substrates. The growth of the films has been studied as a function of substrate temperature and oxygen partial pressure in deposition, using X-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM). Electrochemical properties of LiNi_0.5Mn_1.5O₄ thin film cathodes were investigated using cyclic voltammetry and galvanostatic charge/discharge against a lithium anode. The initial capacity and capacity retention of the films are highly dependent on the crystallinity and purity of the films. LiNi_0.5Mn_1.5O₄ thin films grown at 600 °C in an oxygen partial pressure of 200 mTorr are well crystallized with high purity, exhibiting excellent capacity retention between 3 and 5 V with a LiPF₆-based electrolyte.     

Spontaneously ordered TiO2 nanostructures

Titanium dioxide thin films were deposited on quartz substrates kept at different O₂ pressures using pulsed laser deposition technique. The effects of reactive atmosphere and annealing temperature on the structural, morphological, electrical and optical properties of the films are discussed. Growth of films with morphology consisting of spontaneously ordered nanostructures is reported. The films growth under an oxygen partial pressure of 3 × 10⁻⁴ Pa consist in nanoislands with voids in between them whereas the film growth under an oxygen partial pressure of 1 × 10⁻⁴ Pa, after having being subjected to annealing at 500 °C, consists in nanosized elongated grains uniformly distributed all over the surface. The growth of nanocrystallites with the increase in annealing temperature is explained on the basis of the critical nuclei-size model.     

Sol-gel derived 6CaO·6SrO·7Al2O3 thin films using metal alkoxides

The novel 6CaO·6SrO·7Al₂O₃ (C6S6A7) thin films were deposited onto soda lime glass substrate using calcium, strontium, aluminium isopropoxide and 2-methoxy ethanol as starting materials via sol-gel dip coating technique. The electrical and optical properties of C6S6A7 films were investigated for films sample annealed at 450 °C for 2 h in air and hydrogen (H₂) atmosphere, respectively. X-ray diffraction pattern and Fourier transformed infrared spectroscopy analysis confirms cubic structure to the C6S6A7 material. The optical transmission spectra of C6S6A7 films showed the high transparency in wide visible range of ∼ 88 and 80% for air and H₂ annealed samples, respectively. The C6S6A7 films sheet resistance of 528 and 0.65 k Ohm/square has been observed for films annealed in air and H₂ atmosphere at 450 °C, respectively.     

Properties of nano-crystalline LiMn2O4 thin films deposited by pulsed laser deposition

Properties of LiMn₂O₄ thin films deposited on polished stainless steel substrates at 400 °C and 200 mTorr of oxygen by pulsed laser deposition have been characterized by electrochemical measurements and physical analyses. The film was mainly composed of nano-crystals less than 100 nm. A maximum specific capacity of 141.9 mAh/g cycled between 3.0 and 4.5 V with a current density of 20 μAh/cm² has been achieved. The film exhibited an excellent cycling stability up to 500 cycles. The low charge-transfer resistance at high potentials as revealed by AC impedance resulted in high charge/discharge potential and more capacity. The effect of overdischarge was limited and Jahn-Teller effect was overcome to a significant extent in this nano-crystalline film. Ex situ XRD, Raman and XPS provided supporting evidence in the changes in structure, reactivity and cycling stability of nano-crystalline LiMn₂O₄ film cathodes under different charge/discharge states and cycling tests. SEM images also revealed the stability of the surface topography after a long-term cycling test.     

Chemical, morphological and nano-mechanical characterizations of Al2O3 thin films deposited by metal organic chemical vapour deposition on AISI 304 stainless steel

Amorphous alumina coatings of different thickness have been deposited on AISI 304 stainless steel substrates by MOCVD in a hot wall reactor at 380 °C under O₂/H₂O atmosphere. The used aluminium precursor was the high volatile and easy to prepare dimethyl-aluminum-isopropoxide. Selected films were annealed in N₂ and O₂ atmosphere at 500 and 700 °C to evaluate the effects of the thermal treatments on the morphology and on the nano-mechanical properties of the coatings. X-ray diffraction and Rutherford backscattering spectroscopy measurements indicated that both the as grown and annealed films were amorphous and very pure with the correct Al₂O₃ stoichiometry. The surface morphology, investigated by atomic force microscopy, was free of cracks with a roughness of the films that increases with deposition time and with annealing in oxygen atmosphere. The hardness and the elastic modulus of the films and of the AISI 304 stainless steel substrate were measured by load-depth nano-indentation tests. The results highlighted a significant increase in the Berkovich hardness of the coated samples compared to that of the bulk AISI 304 stainless steel.     

Sintering of Al2O3-SiC composite from sol-gel method with MgO, TiO2 and Y2O3 addition

Al₂O₃-SiC composite ceramics were prepared by pressureless sintering with and without the addition of MgO, TiO₂ and Y₂O₃ as sintering aids. The effects of these compositional variables on final density and hardness were investigated. In the present article at first α-Al₂O₃ and β-SiC nano powders have been synthesized by sol-gel method separately by using AlCl₃, TEOS and saccharose as precursors. Pressureless sintering was carried out in nitrogen atmosphere at 1600 °C and 1630 °C. The addition of 5 vol.% SiC to Al₂O₃ hindered densification. In contrast, the addition of nano MgO and nano TiO₂ to Al₂O₃-5 vol.% SiC composites improved densification but Y₂O₃ did not have positive effect on sintering. Maximum density (97%) was achieved at 1630 °C. Vickers hardness was 17.7 GPa after sintering at 1630 °C. SEM revealed that the SiC particles were well distributed throughout the composite microstructures. The precursors and the resultant powders were characterized by XRD, STA and SEM.     

Characterization of La0.67Sr0.33MnOz thin films synthesized by metal-organic decomposition on different substrates

La_0.67Sr_0.33MnO_z (LSMO) thin films were synthesized by means of metal-organic decomposition on the substrates including amorphous quartz, (1 0 0) Si chip, (1 0 0) MgO single crystal and polycrystalline Al₂O₃ ceramic plate. The structure and magnetotransport properties of the films were characterized. X-ray diffraction spectra show that all samples are polycrystalline with (2 0 2) preferred orientation. All films present metal–insulator transition and enhanced magnetoresistance (MR) effect below metal–insulator transition peak temperature (T_p). At room temperature (RT) low-field magnetoresistance effect (LFMR) and linear change of resistivity under applied field are exhibited by all the films. These magnetotransport properties were first ascribed to the porous structural characteristics in the films observed by atomic force microscope. Furthermore, the LSMO film synthesized on (1 0 0) MgO substrate presents a bit different magnetic properties and magnetotransport from the other samples, including broad ferromagnetic–paramagnetic transition zone, lower T_p and weaker LFMR at RT. However, for the samples synthesized on the other substrates, the LFMR effect is very similar to each other and their MR ratio reaches near 5% under 10 kOe field. Thus the substrate effect of LSMO film on (1 0 0) MgO is more intensive than that of the other samples.     

V-doped In2O3 nanofibers for H2S detection at low temperature

Pristine and vanadium-doped In₂O₃ nanofibers were fabricated by electrospinning and their sensing properties to H₂S gas were studied. X-ray diffractometry (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to investigate the inner structure and the surface morphology. The H₂S-sensing performances were characterized at different temperatures ranging from 50 to 170 °C. The sensor based on 6 mol% V-doped In₂O₃ nanofibers exhibit the highest response, i.e. 13.9–50 ppm H₂S at the relatively low temperature of 90 °C. In addition, the fast response (15 s) and recovery (18 s) time, and good selectivity were observed.     

Growth of conformal single-walled carbon nanotube films from Mo/Fe/Al2O3 deposited by electron beam evaporation

We discuss growth of high-quality carbon nanotube (CNT) films on bare and microstructured silicon substrates by atmospheric pressure thermal chemical vapor deposition (CVD), from a Mo/Fe/Al₂O₃ catalyst film deposited by entirely electron beam evaporation. High-density films having a tangled morphology and a Raman G/D ratio of at least 20 are grown over a temperature range of 750-900 °C. H₂ is necessary for CNT growth from this catalyst in a CH₄ environment, and at 875 °C the highest yield is obtained from a mixture of 10%/90% H₂/CH₄. We demonstrate for the first time that physical deposition of the catalyst film enables growth of uniform and conformal CNT films on a variety of silicon microstructures, including vertical sidewalls fabricated by reactive ion etching and angled surfaces fabricated by anisotropic wet etching. Our results confirm that adding Mo to Fe promotes high-yield SWNT growth in H₂/CH₄; however, Mo/Fe/Al₂O₃ gives poor-quality multi-walled CNTs (MWNTs) in H₂/C₂H₄. An exceptional yield of vertically-aligned MWNTs grows from only Fe/Al₂O₃ in H₂/C₂H₄. These results emphasize the synergy between the catalyst and gas activity in determining the morphology, yield, and quality of CNTs grown by CVD, and enable direct growth of CNT films in micromachined systems for a variety of applications.     

Ferroelectric and structural instability of (Pb,Ca)TiO3 thin films prepared in an oxygen atmosphere and deposited on LSCO thin films which act as a buffer layer

Structural, microstructural and ferroelectric properties of Pb_0.90Ca_0.10TiO₃ (PCT10) thin films deposited using La_0.50Sr_0.50CoO₃ (LSCO) thin films which serve only as a buffer layer were compared with properties of the thin films grown using a platinum-coated silicon substrate. LSCO and PCT10 thin films were grown using the chemical solution deposition method and heat-treated in an oxygen atmosphere at 700 °C and 650 °C in a tube oven, respectively. X-ray diffraction (XRD) and Raman spectroscopy results showed that PCT10 thin films deposited directly on a platinum-coated silicon substrate exhibit a strong tetragonal character while thin films with the LSCO buffer layer displayed a smaller tetragonal character. Surface morphology observations by atomic force microscopy (AFM) revealed that PCT10 thin films with a LSCO buffer layer had a smoother surface and smaller grain size compared with thin films grown on a platinum-coated silicon substrate. Additionally, the capacitance versus voltage curves and hysteresis loop measurement indicated that the degree of polarization decreased for PCT10 thin films on a LSCO buffer layer compared with PCT10 thin films deposited directly on a platinum-coated silicon substrate. This phenomenon can be described as the smaller shift off-center of Ti atoms along the c-direction 〈001〉 inside the TiO₆ octahedron unit due to the reduction of lattice parameters. Remnant polarization (P_r) values are about 30 μC/cm² and 12 μC/cm² for PCT10/Pt and PCT10/LSCO thin films, respectively. Results showed that the LSCO buffer layer strongly influenced the structural, microstructural and ferroelectric properties of PCT10 thin films.     

Low-temperature atomic layer deposited Al2O3 thin film on layer structure cathode for enhanced cycleability in lithium-ion batteries

The deposition of Al₂O₃ on LiCoO₂ electrodes using a low-temperature atomic layer deposition has been investigated. Scanning electron microscopy confirms that Al₂O₃ films can be homogeneously deposited on LiCoO₂ particles of porous electrodes at 120 °C. The results of X-ray photoelectron spectroscopy show that the Al₂O₃ preferentially deposits on the LiCoO₂. Furthermore, the results of cycling stability tests show that the cells with Al₂O₃-coated LiCoO₂ electrodes have enhanced performance.     

Electrochemically deposited thermoelectric n-type Bi2Te3 thin films

Electrochemically deposited n-type BiTe alloy thin films were grown from nitric acid baths on sputtered Bi_xTe_y/SiO/Si substrates. The film compositions, which varied from 57 to 63 at.% Te were strongly dependent on the deposition conditions. Surface morphologies varied from needle-like to granular structures depending on deposited Te content. Electrical and thermoelectric properties of these electrodeposited Bi_xTe_y thin films were measured before and after annealing and compared to those of bulk Bi₂Te₃. Annealing at 250 °C in reducing H₂ atmosphere enhanced thermoelectric properties by reducing film defects. In-plane electrical resistivity was highly dependent on composition and microstructure. In-plane Hall mobility decreased with increasing carrier concentration, while the magnitude of the Seebeck coefficient increased with increasing electrical conductivity to a maximum of −188.5 μV/K. Overall, the thermoelectric properties of electrodeposited n-type BiTe thin films after annealing were comparable to those of bulk BiTe films.     

Texture effect on the electrochemical properties of LiCoO2 thin films prepared by PLD

LiCoO₂ thin films were prepared by pulsed laser deposition (PLD) on Pt/Ti/SiO₂/Si (Pt) and Au/MgO/Si (Au) substrates, respectively. Crystal structures and surface morphologies of thin films were investigated by X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM). The LiCoO₂ thin films deposited on the Pt substrates exhibited a preferred (0 0 3) texture with smooth surfaces while the LiCoO₂ thin films deposited on the Au substrates exhibited a preferred (1 0 4) texture with rough surfaces. The electrochemical properties of the LiCoO₂ films with different textures were compared with charge-discharge, dQ/dV, and Li diffusion measurements (PITT). Compared with the (1 0 4)-textured LiCoO₂ thin films, the (0 0 3)-textured thin films exhibited relatively lower electrochemical activity. However, the advantage of the (1 0 4)-textured film only remained for a small number of cycles due to the relatively faster capacity fade. Li diffusion measurements showed that the Li diffusivity in the (0 0 3)-textured film is one order of magnitude lower than that in the (1 0 4)-textured film. As discussed in this paper, we believe that Li diffusion through grain boundaries is comparable to or even faster than Li diffusion through the grains.     

The effect of Bi2O3 compensation during thermal treatment on the crystalline and electrical characteristics of bismuth titanate thin films

Bismuth titanate thin films are deposited on ITO/glass substrates by rf magnetron sputtering at room temperature using a Bi₄Ti₃O₁₂ ceramic target. The deposited Bi₄Ti₃O₁₂ films are annealed in a conventional furnace in ambient air for 10 min at temperatures ranging from 550 to 640 °C. One specimen is annealed in a crucible containing additional Bi₂O₃ compensation powder, while the other specimen is annealed in ambient air. XRD analysis shows that the crystal phases of films annealed with Bi₂O₃ powder are better than those of films annealed without Bi₂O₃ powder. Furthermore, the EDS results reveal that the bismuth weight percentage of the former is higher than that of the latter. SIMS analysis shows that the bismuth decreases near the surface of Bi₄Ti₃O₁₂ film annealed without Bi₂O₃ powder, but reveals a stable distribution throughout the film annealed with Bi₂O₃ powder. These results imply that bismuth is readily evaporated during the thermal treatment process, particularly from the region near the film surface. Finally, the dielectric and polarization properties of the thin films annealed with Bi₂O₃ powder are found to be superior to those of the films annealed in ambient air.     

Improved performance of dense TiO2/CdSe coupled thin films by low temperature process

Dense TiO₂ and TiO₂/CdSe coupled nanocrystalline thin films were synthesized onto ITO coated glass substrate by chemical route at relatively low temperature (≤100 °C). TiO₂ films were nanocrystalline and crystallinity disappears after CdSe deposition as evidenced by X-ray powder diffraction. Surface morphology and physical appearance of films were studied from SEM and actual photo-images, reveals dense nature of TiO₂ (10-12 nm spherical grains, faint violet) and CdSe (80-90 nm spherical grains, deep brown), respectively. Presence of two absorption edges in UV spectra implies existence of separate phases rather than composite formation. TiO₂ film was found to have higher water contact angle (71°) than TiO₂/CdSe (61°) and CdSe (56°). I-V and stability tests of photo-electrochemical cells were performed with TiO₂ and TiO₂/CdSe film electrodes (under light of illumination intensity 80 mW/cm²) in lithium iodide as an electrolyte using two-electrode system.     

Electrochemical behaviour of ZrO2 sol-gel pre-treatments on AA6060 aluminium alloy

ZrO₂ pre-treatments applied with the sol-gel technique are a possible replacement of chromium based pre-treatments on aluminium alloys. The thickness and homogeneity of the films deposited on AA6060 alloy are strongly related to the process parameters like preparation of the surface, number of dips and thermal treatment of the film.ZrO₂ films were prepared using the dip-coating technique in sol obtained from metal-organic precursors in an organic solvent (0.1 M Zr(OBuⁿ)₄ in anhydrous n-butanol with addition of acetic acid as complexing agent). Different layers were applied on AA6060 changing number of dips and thermal treatment (150 °C for 1 h or 250 °C for 4 min). The typical thickness of the deposited layers was in the range 70-180 nm depending on process parameters. The electrochemical behaviour of the pre-treated alloy in diluted Harrison solution (0.05 wt% NaCl + 0.35 wt% (NH₄)₂SO₄) was investigated by means of potentiodynamic polarization, open circuit potential measurements, and electrochemical impedance spectroscopy. In addition, the electrochemical behaviour of ZrO₂ sol-gel films was compared with that of chromatized AA6060 and fluotitanated/fluozirconated AA6060. In order to evaluate the adhesion properties of the films, ZrO₂ pre-treated AA6060, chromatized AA6060 and fluotitanated/fluozirconated AA6060 were painted with a polyester resin and subjected to thermal cycles in 0.05 wt% NaCl. Each thermal cycle consisted of heating the samples at 90 °C, permanence at 90 °C for 6 h, cooling at room temperature and permanence at room temperature for 18 h. Impedance measurements were performed at the end of each cycle.Potentiodynamic polarization curves and impedance spectra indicate that ZrO₂ pre-treatments have similar barrier properties to those of chromatized AA6060. However, no self-healing ability is observed for ZrO₂ films.The barrier properties of ZrO₂ films are strongly dependent on process parameters. In particular, the number of dips determines the amount of defects in the film and its homogeneity. The electrochemical behaviour strongly improves increasing the number of dips in the deposition bath. Thermal aging cycles evidence good adhesion properties for ZrO₂ pre-treatments.