Properties of neodymium-doped Ca<Subscript>0.15</Subscript>Sr<Subscript>1.85</Subscript>Bi<Subscript>4</Subscript>Ti<Subscript>5</Subscript>O<Subscript>18</Subscript> ferroelectric ceramics

Bismuth-layered compound Ca_0.15Sr_1.85Bi_4−xNd_xTi₅O₁₈ (CSBNT, x = 0–0.25) ferroelectric ceramics samples were prepared by solid-state reaction method. The effects of Nd³⁺ doping on their ferroelectric and dielectric properties were investigated. The remnant polarization Pr of CSBNT ceramics increases at beginning then decreases with increasing of Nd³⁺ doping level, and a maximum Pr value of 9.6 μC/cm² at x = 0.05 was detected with a coercive field Ec = 80.2 kV/cm. Nd³⁺ dopant not only decreases the Curie temperature linearly, but also the dielectric constant (ε_r) and dielectric loss tangent (tan δ). The magnitudes of ε_r and tan δ at the frequency of 100 kHz are estimated to be 164 and 0.0083 at room temperature, respectively.     

Investigation of the electrical and mechanical properties of short sisal fiber-reinforced epoxy composite in correlation with structural parameters of the reinforced fiber

Chemical modification of the sisal fiber is done through dewaxing. Increment in the degree of crystallinity, crystallite size, and bulk density are observed in case of the dewaxed sisal fiber. The partial removal of wax, hemicellulose, and lignin content is confirmed from the FTIR spectra. Better flexural strength and tensile strength are observed in case of dewaxed sisal fiber-reinforced epoxy composite (DSFREC) in comparison to the raw sisal fiber-reinforced epoxy composite (RSFREC). This may be due to the improvement in the adhesion between the fiber and matrix. Lower values of dielectric constant (ε_r) and dielectric loss (tanδ) are also observed in case of DSFREC. The shifting of M″_max toward higher frequency side with rise in temperature ascribing a correlation between motions of mobile ions and suggests a spread of relaxation times. Moreover, the structural parameters of the fiber are correlated with the mechanical and electrical properties of the composite.     

Conductive carbon black-filled ethylene acrylic elastomer vulcanizates: physico-mechanical,thermal, and electrical properties

The effect of conductive carbon black (CCB) on the physico-mechanical, thermal, and electrical properties have been investigated by various characterization techniques. Physico-mechanical properties of the vulcanizates were studied with variation of filler loading, which revealed that the tensile strength increased up to 20 phr (parts per hundred rubber) CCB loading, whereas at higher filler loading it decreased marginally. Furthermore, tensile modulus, tear strength, and hardness gradually increased with increase in filler loading. The compression set and abrasion loss decreased with increasing CCB loading. The bound rubber content (Bdr) of unvulcanized rubber was found to increase significantly with increasing CCB content. The crosslink density increased, whereas the swelling decreased with CCB loading. The thermal stability of the vulcanizates evaluated by thermogravimetric analysis (TGA) showed a minor increment with increase in CCB content. It is observed from the dynamic mechanical thermal analysis (DMTA) that the storage modulus (E′), loss modulus (E″), and glass transition temperature (T _g) of ethylene acrylic elastomer (AEM) matrix increased by incorporation of CCB. The dielectric relaxation characteristics of AEM vulcanizates such as dielectric permittivity (ε′), electrical conductivity (σ _ac), and electric moduli (M′ and M″) have been studied as a function of frequency (10¹ to 10⁶ Hz) at different filler loading. The variation of ε′ with frequency and filler loading was explained based on the interfacial polarization of the fillers within a heterogeneous system. The ε′ increased with increasing the CCB loading and it decreased with applied frequency. The frequency dependency of σ _ac was investigated using conduction path theory and percolation threshold limit. The σ _ac increased with increase in both CCB concentration and applied frequency. The M′ increased with applied frequency, however, it decreased above 30 phr filler. The M″ peak shifted towards higher frequency region and above 20 phr filler loading the peaks were not observed within the tested frequency region. The electromagnetic interference shielding effectiveness (EMISE) was studied in the X-band frequency region (8–12 GHz), which significantly improved with increase in CCB loading.     

Effect of MgO Nano-oxide Additions on the Superconductivity and Dielectric Properties of Cu0.25Tl0.75Ba2Ca3Cu4O12?δ Superconducting Phase

The effect of MgO nano-oxide on both superconducting and dielectric properties of polycrystalline (Cu_0.25Tl_0.75)-1234 was studied. The MgO-content varied from x=0.0 up to 1.0 wt% of the sample’s total mass. The volume fraction of the prepared samples (x=0.0, 0.2, 0.6 and 1.0 wt%) was estimated from the room-temperature X-ray powder diffraction patterns. The superconducting transition temperature T _c, calculated from resistivity data, increased from 122 to 136 K as x increased from 0.0 to 0.8 wt% and then it decreased to 117 K for x=1.0 wt%. Also, the dielectric properties of all samples were measured in the frequency range from 100 Hz to 4 MHz at different temperatures from 113 to 300 K. The real part of dielectric constant ε′ was strongly dependent on both temperature and frequency for all x values. The imaginary part of dielectric constant ε″ and loss factor tan δ showed dispersion which shift toward lower frequencies with decreasing temperature. The ac conductivity σ _ac was derived from the admittance and sample dimensions in the same frequency range. It followed the power law σ _ac(ω)∼ω ^−γ with γ≈0.8.     

AC-field Frequency Response of?Cu0.5Tl0.5Ba2(Ca2?qMgq)Cu3O10?δ Bulk Superconductor

The dielectric properties of Cu_0.5Tl_0.5Ba₂Ca_2−q Mg _q Cu₃O_10−δ (q=0, 0.5, 1.0 1.5) superconductor samples were studied at two temperatures of 80 and 290 K by capacitance (C) and conductance (G) measurements with the test frequency (f) in the range of 10 KHz to 10 MHz. We have presented the measurements of the dielectric constants (ε′ and ε″), dielectric loss factor (tan δ) and ac-conductivity (σ _ac) as a function of frequency and temperature. A negative capacitance (NC) experience has been observed, which is most likely due to different contact electrodes and superconductor samples’ Fermi levels. Since metals have their Fermi levels higher than ceramics, there is a flow of the carriers from the ceramic samples towards the metal electrodes. The dielectric polarization phenomenon is observed, which is due to dislodgment of mobile charges from their equilibrium position relative to fixed charges of the reservoir layer. The improved inter plane coupling promoted by Mg substitution at Ca site would change the dielectric response of Cu_0.5Tl_0.5Ba₂Ca_2−q Mg _q Cu₃O_10−δ superconductors. To observe such effects in Mg doped Cu_0.5Tl_0.5Ba₂Ca_2−q Mg _q Cu₃O_10−δ superconductors, di- electric measurements were carried out both at room temperature (290 K) and in the superconducting state closer to the boiling point of liquid nitrogen (80 K). The excess conductivity arising due to superconducting state of material has been determined, and its role in the mechanism of superconductivity is suggested. The negative dielectric constant (ε′) and dielectric loss factor (tan δ) show strong dispersion at low frequencies. The lower thermal agitation at 80 K may enhance the polarizability and hence the dielectric constants (ε′ and ε″).     

Structural,Electrical and Dielectric Properties of Co–Mn Spinel Nanoferrites Prepared by Co-precipitation Technique

Cobalt manganese nanoceramics with nominal composition Co_1−x Mn _x Fe₂O₄ (x=0.00, 0.15, 0.30, 0.45, 0.60, 0.75) were synthesized by a chemical coprecipitation technique. The X-ray diffraction patterns revealed the cubic spinel structure. The average crystallite size from the Sherrer formula was in the range of 28 nm–56 nm. The lattice parameter increased with a concentration of manganese. Scanning electron microscopy (SEM) was used for microstructural study. The electrical properties such as electrical resistivity (ρ), drift mobility (μ _d), and activation energy (ΔE) were measured using a two-probe apparatus in the temperature range 323–573 K. The electrical resistivity decreased with temperature and manganese concentration. The dielectric constant (ε′), loss factor or imaginary loss (ε″) and dielectric tangent loss (tan δ) were measured at room temperature using a LCR meter in the frequency range 100 Hz to 5 MHz. All the dielectric parameters decreased with increasing frequency. The AC electrical conductivity (σ _ac) was calculated from the dielectric measurements. It increases with increase of frequency and manganese concentration. The increase in electrical conductivity may be attributed to the formation of Co⁺³ and Mn⁺³ from Co⁺² and Mn⁺³, respectively, at both A and B sites.     

Frequency-dependent dielectric and electric modulus properties of Li–Ni–Sm–Fe–O spinel embedded in conducting polymer

Conducting polymeric nanocomposite containing Li–Ni–Sm–Fe–O spinel was synthesized by the chemical oxidizing of aniline in the presence of LiNi_0.5Sm_0.08Fe_1.92O₄ particles. The dielectric and electric modulus properties of the as-prepared samples were investigated over a frequency range from 10⁶ to 10⁹ Hz. The dielectric constant (ε′), dielectric loss (ε″) and dissipation factor (tan δ) for all samples presented relatively high values at low frequency and were found to decrease with the frequency. The values of ε′, ε″ and tan δ of the nanocomposite were lower than that of the pristine PANI. Electric modulus analysis had been carried out to understand the electrical relaxation process. The dielectric relaxation time for the nanocomposite became longer due to the introduction of LiNi_0.5Sm_0.08Fe_1.92O₄ particles lowering the crystallinity of PANI.     

Electrical conductivity and dielectric properties of cadmium thiogallate CdGa<Subscript>2</Subscript>S<Subscript>4</Subscript> thin films

Cadmium thiogallate CdGa₂S₄ thin films were prepared using a conventional thermal evaporation technique. The dark electrical resistivity calculations were carried out at different elevated temperatures in the range 303–423 K and in thickness range 235–457 nm. The ac conductivity and dielectric properties of CdGa₂S₄ film with thickness 457 nm has been studied as a function of temperature in the range from 303 to 383 K and in frequency range from 174 Hz to 1.4 MHz. The experimental results indicate that σ_ac(ω) is proportional to ω ^s and s ranges from 0.674 to 0.804. It was found that s increases by increasing temperature. The results obtained are discussed in terms of the non overlapping small polaron tunneling model. The dielectric constant (ε′) and dielectric loss (ε″) were found to be decreased by increasing frequency and increased by increasing temperature. The maximum barrier height (W _m) was estimated from the analysis of the dielectric loss (ε″) according to Giuntini’s equation. Its value for the as-deposited films was found to be 0.294 eV.     

Compositional,temperature and frequency dependence of dielectric behaviour of zinc substituted copper- ferri-chromates

The comprehensive study on compositional, temperature and frequency dependent dielectric properties of Zn_xCu_1−xFeCrO₄ (x = 0.0, 0.2, 0.4 and 0.6 ) was carried out by means of a. c. resistivity (ρ_ac), dielectric constant (ε′) and loss tangent (tanδ) measurements in the frequency range from 100 Hz to 1 MHz at different temperatures ranging from 40 °C to 500 °C. An abnormal behaviour of ε′ as a function of temperature is explained on the basis of contribution of two types of charge carriers in the polarization process. It is found that magnetic ordering does not have marked influence on the dielectric properties. The probable conduction mechanism in the present system is due to electron transition such as Fe²⁺ Fe³⁺ and Cu²⁺ Cu¹⁺ rather than ionization or polaron hopping mechanism.     

Compositional dependence of the structural and dielectric properties of Li<Subscript>2</Subscript>O–GeO<Subscript>2</Subscript>–ZnO–Bi<Subscript>2</Subscript>O<Subscript>3</Subscript>–Fe<Subscript>2</Subscript>O<Subscript>3</Subscript> glasses

(10Li₂O–20GeO₂–30ZnO–(40-x)Bi₂O₃–xFe₂O₃ where x = 0.0, 3, 6, and 9 mol%) glasses were prepared. A number of studies, viz. density, differential thermal analysis, FT-IR spectra, DC and AC conductivities, and dielectric properties (constant ε′, loss tan δ, AC conductivity, σ _ac, over a wide range of frequency and temperature) of these glasses were carried out as a function of iron ion concentration. The analysis of the results indicate that, the density and molar volume decrease with an increasing of iron content indicates structural changes of the glass matrix. The glass transition temperature T _g and onset of crystallization temperature T _x increase with the variation of concentration of Fe₂O₃ referred to the growth in the network connectivity in this concentration range, while glass-forming ability parameter ΔT decrease with increase Fe₂O₃ content, indicates an increasing concentration of iron ions that take part in the network-modifying positions. The FT-IR spectra evidenced that the main structural units are BiO₃, BiO₆, ZnO₄, GeO₄, and GeO₆. The structural changes observed by varying the Fe₂O₃ content in these glasses and evidenced by FTIR investigation suggest that the iron ions play a network modifier role in these glasses while Bi₂O₃, GeO₂, and ZnO play the role of network formers. The temperature dependence of DC and AC conductivities at different frequencies was analyzed using Mott’s small polaron hopping model and, the high temperature activation energies have been estimated and discussed. The dielectric constant and dielectric loss increased with increase in temperature and Fe₂O₃ content.     

Dielectric behaviour of erbium substituted Mn-Zn ferrites

Dielectric properties such as dielectric constant (ε′) and dielectric loss tangent (tan□δ) of mixed Mn-Zn-Er ferrites having the compositional formula Mn_0.58Zn_0.37Fe_2.05−xEr_x0₄ (where itx = 0.2, 0.4, 0.6, 0.8 and 1.0) were measured at room temperature in the frequency range 1–13 MHz using a HP 4192A impedance analyser. Plots of dielectric constant (ε′) vs frequency show a normal dielectric behaviour of spinel ferrites. The frequency dependence of dielectric loss tangent (tan δ) was found to be abnormal, giving a peak at certain frequency for all mixed Mn-Zn-Er ferrites. A qualitative explanation is given for the composition and frequency dependence of the dielectric constant and dielectric loss tangent. Plots of dielectric constant vs temperature have shown a transition near the Curie temperature for all the samples of Mn-Zn-Er ferrites. However, Mn_0.58Zn_0.37Er_1.0Fe_1.05O₄ does not show a transition. On the basis of these results an explanation for the dielectric mechanism in Mn-Zn-Er ferrites is suggested.     

Microstructure and microwave dielectric characteristics of CaO–B2O3–SiO2 glass ceramics

CaO–B₂O₃–SiO₂ (CBS) glass powders are prepared by traditional glass melting method, whose properties and microstructures are characterized by Differential thermal analysis (DTA), X-ray diffraction (XRD) and scanning electron microscopy (SEM). It is found that the pure CBS glass ceramics possess excellent dielectric properties (ε _r = 6.5, tan δ = 5 × 10⁻³ at 10 GHz), but a higher sintering temperature (>900 °C) and a narrow sintering temperature range (about 10 °C). The addition of a low-melting-point CaO–B₂O₃–SiO₂ glass (LG) could greatly decrease the sintering temperature of CBS glass to 820 °C and significantly enlarge the sintering temperature range to 40 °C. The CBS glass ceramic with 30 wt% LG glass addition sintered at 840 °C exhibits better dielectric properties: ε _r ≈ 6, tan δ < 2 × 10⁻³ at 10 GHz, and the major phases of the sample are CaSiO₃, CaB₂O₄ and SiO₂.     

Study of dielectric properties of nanophase silver iodide

Dielectric properties of nanophase AgI are studied over the frequency range from 100 kHz to 3 MHz at different temperatures. The values ofε, tanδ andσ _ac are considerably larger than those reported for crystalline pellets of AgI, but they show a similar trend in variation with frequency and temperature. The increase in these values are attributed to the defect structure of the nano-particles.     

Study of the structural and dielectric properties of Bi<Subscript>2</Subscript>O<Subscript>3</Subscript> and PbO addition on BiNbO<Subscript>4</Subscript> ceramic matrix for RF applications

In this paper, the structural and dielectric properties of BNO (BiNbO₄) was investigated as a function of the external RF frequency and temperature. The BNO Ceramics, prepared by the conventional mixed oxide method and doped with 3, 5 and 10 wt. % Bi₂O₃–PbO were sintered at 1,025 °C for 3 h. The X-ray diffraction patterns of the samples sintered, shown the presence of the triclinic phase (β-BNO). In the measurements obtained at room temperature (25 °C) was observed that the largest values of dielectric permittivity (ε′ _r ) at frequency 100 kHz, were for the samples: BNO5Bi (5 wt. % Bi₂O₃) and BNO5Pb (5 wt. % PbO) with values ε′ _r ~ 59.54 and ε′ _r ~ 78.44, respectively. The smaller values of loss tangent (tan δ) were for the samples: BNO5Bi and BNO3Pb (3 wt. % PbO) with values tan δ ~ 5.71 × 10⁻⁴ and tan δ ~ 2.19 × 10⁻⁴, respectively at frequency 33.69 MHz. The analysis as a function of temperature of the dielectric properties of the samples, obtained at frequency 100 kHz, showed that the larger value of the relative dielectric permittivity was about ε′ _r ~ 76.4 at temperature 200 °C for BNO5Pb sample, and the value smaller observed of dielectric loss was for BNO3Bi sample at temperature 80 °C, with about tan δ ~ 5.4 × 10⁻³. The Temperature Coefficient of Capacitance (TCC) values at 1 MHz frequency, present a change of the signal from BNO (−55.06 ppm/°C) to the sample doped of Bi: BNO3Bi (+86.74 ppm/°C) and to the sample doped of Pb: BNO3Pb (+208.87 ppm/°C). One can conclude that starting from the BNO one can increase the doping level of Bi or Pb and find a concentration where one have TCC = 0 ppm/°C, which is important for temperature stable materials applications like high frequency capacitors. The activation energy (H) obtained in the process is approximately 0.55 eV for BNO sample and increase with the doping level. These samples will be studied seeking the development ceramic capacitors for applications in radio frequency devices.     

Synthesis,dielectric, and hysteresis behaviour of Ba(Nb<Subscript>0.2</Subscript>Ti<Subscript>0.8</Subscript>)O<Subscript>3</Subscript> ceramics and their solid solutions with BaZrO<Subscript>3</Subscript>

Solid state reaction technique was employed to synthesize Ba(Nb_0.2Ti_0.8)O₃ [BNT], and 0.9Ba(Nb_0.2Ti_0.8)O₃ + 0.1BaZrO₃ [BNT + BZ] samples. Sintered pellets were investigated for its dielectric (ε_r and tanδ) properties in the temperature range 100 K–380 K and in the frequency range of 100 Hz–1 MHz. The variation of ε_r and tan δ may be attributed to hopping of trapped charge carriers, which resulted in an extra dielectric response in addition to the dipole response. Hysteresis loop measurements were studied in the temperature regime 295 K–423 K. Loop area shrunk with the increase of temperature that may be due to phase transition from ferroelectric to paraelectric state.     

Dielectric characteristic and local phase transition of gallium phosphide nanosolid

The dependences of relative dielectric permittivity, ε′ _r, and tangent of dielectric loss angle, tg δ, of gallium phosphide (GaP) nanosolid on frequency and temperature were investigated. The GaP nanopowders are subglobular in shape, with the average crystallite size of about 50 nm evaluated from Scherrer equation. It can be concluded that the leakage current mechanism plays an important role in the dielectric loss of the GaP nanosolid. The dielectric characteristic of the GaP nanosolid in the range 298–350 K allows to detect an ε′ _r or tg δ peak at 303 K that is due to local phase transitions, probably in the high hydrostatic stress field of dislocations with an edge component. Under the influence of an electric field, the high hydrostatic stress field of dislocations can undergo changes in deformation, accompanied by drastic stress-induced changes in the order parameter near the phase transition temperature, and hence, changes in the Gibbs free energy per unit volume can be found.     

Magnetic and Dielectric Properties of <Emphasis Type="Italic">R</Emphasis><Subscript>2</Subscript>CuTiO<Subscript>6</Subscript> Compounds (<Emphasis Type="Italic">R</Emphasis>=Y,La, Pr and Nd)

Magnetic and dielectric properties of the double perovskite compounds of the type R ₂CuTiO₆ (RCTO, where R=Y, La, Pr and Nd) has been studied. Y₂CuTiO₆ (YCTO) crystallizes in a hexagonal unit cell, whereas the other three compounds form into orthorhombic structure. All four compounds show paramagnetic behavior down to 5 K. The dielectric studies show moderate dielectric constant (ε′) and very small dielectric loss (tan δ) for YCTO. The orthorhombic members of RCTO compounds exhibit moderate values of ε′ and tan δ. The dielectric properties are presented and discussed here in the light of the influence of structure and rare-earth ions on the physical properties of RCTO compounds.     

Synthesis and dielectric properties of MXTi<Subscript>7</Subscript>O<Subscript>16</Subscript> (M = Ba and Sr; X = Mg and Zn) hollandite ceramics

MXTi₇O₁₆ (M = Ba and Sr; X = Mg and Zn) ceramics have been synthesized by the conventional solid state ceramic route. The dielectric properties such as dielectric constant (ε_r), loss tangent (tan δ) and temperature variation of dielectric constant (τ_εr) of the sintered ceramic compacts are studied using an impedance analyser up to 13 MHz region. The strontium compounds have relatively high dielectric constant and low loss tangent compared to the barium analogue. The phase purity of these materials has been examined using X-ray diffraction studies and microstructure using SEM method.     

Preparation and characterization of cordierite filled PTFE laminates for microwave substrate applications

Phase pure cordierite (2MgO · 2Al₂O₃ · 5SiO₂) powder was prepared through solid state ceramic route. Silane coated cordierite powder was filled in the PTFE matrix through SMECH process comprising of sigma mixing, extrusion, calendering, followed by hot pressing, to fabricate flexible microwave substrates. Filling fraction of cordierite in the PTFE matrix was varied from 10 to 70 wt% and its effects on density, dielectric properties, coefficient of thermal expansion and water absorption were investigated. The morphology and filler distribution of the filled composite were studied by SEM. Waveguide cavity perturbation technique was employed to measure the dielectric properties of the composites at X-band (8.2–12.4 GHz). Dielectric constant and loss tangent were found increasing with filler loading from 10 wt% (ε _r′ = 2.17, tan δ = 0.0007) to 60 wt% (ε _r′ = 3.17, tan δ = 0.0034).     

Sol–gel derived CaO–B2O3–SiO2 glass/CaSiO3 ceramic composites: processing and electrical properties

The CaO–B₂O₃–SiO₂ glass/CaSiO₃ ceramic (CBS/CS) composites were fabricated via sol–gel processing routes. Their densification behavior, structures and dielectric properties were investigated. The precursors of CBS glass and CS ceramic filler were firstly obtained via individual soft chemical route and then mixed together in various proportions. The results indicated that the structures of CBS/CS composites are characteristic of CS and CaB₂O₄ (CB) ceramic phases distributed in the matrix of glass phase at 800–950 °C. The CS ceramic phase not only acts as fillers, but nuclei for the crystallization of CBS glass as well such that the CS content exhibits an effect on the densification and dielectric properties of the composites. The CBS/CS composites with 10% CS sintered at 850 °C own dielectric properties of ε_r < 5 and tanδ = 6.4 × 10⁻⁴ at 1 MHz.