使用太赫兹快速探测器测量硅少数载流子寿命

利用脉冲触发信号在半导体中产生非平衡态载流子的方式,提出一种使用太赫兹连续源和超快速响应探头测量半导体少数载流子寿命的方法,用于表征半导体的瞬态载流子动力学过程。根据上述设计原理及思路,以泵浦光作为周期性激励信号,搭建出一套工作时间窗口为纳秒到秒量级,时间精度在纳秒量级的非接触式半导体少数载流子寿命测量系统,具有装置简单、操作方便、成本低廉等优点。使用搭建的系统对不同掺杂类型、不同掺杂浓度、不同厚度单晶硅的非平衡态少数载流子寿命进行测量。最后,通过改变泵浦光单脉冲能量,对单晶硅光生载流子寿命进行测量,结果表明单晶硅少数载流子寿命随着泵光能量的增大而变长。该系统所实现的宽工作窗口、高时间精度太赫兹快速过程的探测,可应用于太赫兹领域的快速成像和快速生物响应探测。     

太赫兹时间分辨系统研究有机卤化物钙钛矿薄膜的超快太赫兹调制

研究了利用太赫兹时间分辨系统研究有机卤化物钙钛矿薄膜(CH_3NH_3PbI_3 and CH_3NH_3PbI_(3-x)Cl_x)的皮秒尺度的超快太赫兹调制特性.在光激发作用下出现了太赫兹透射波的瞬时下降.相比于CH_3NH_3PbI_3薄膜,在光激发作用下CH_3NH_3PbI_(3-x)Cl_x薄膜展现了更高的调制深度(10%).通过测算材料的电导率及载流子浓度,其调制机理为瞬态光激发载流子浓度上升.实验结果表明,CH_3NH_3PbI_(3-x)Cl_x薄膜可作为一种高效超快太赫兹调制器件.     

太赫兹时间分辨系统研究有机卤化物钙钛矿薄膜的超快太赫兹调制（英文）

研究了利用太赫兹时间分辨系统研究有机卤化物钙钛矿薄膜(CH_3NH_3PbI_3 and CH_3NH_3PbI_(3-x)Cl_x)的皮秒尺度的超快太赫兹调制特性.在光激发作用下出现了太赫兹透射波的瞬时下降.相比于CH_3NH_3PbI_3薄膜,在光激发作用下CH_3NH_3PbI_(3-x)Cl_x薄膜展现了更高的调制深度(10%).通过测算材料的电导率及载流子浓度,其调制机理为瞬态光激发载流子浓度上升.实验结果表明,CH_3NH_3PbI_(3-x)Cl_x薄膜可作为一种高效超快太赫兹调制器件.     

基于波前倾斜的太赫兹单次测量研究

太赫兹单次测量技术可以对一些超快不可逆过程进行快速测量,在蛋白质变性、核爆模拟分析等领域具有广阔的应用前景。从飞秒激光放大器发出的光脉冲分成两束并分别经过两块光栅产生波前倾斜,一束作为抽运光激发铌酸锂晶体,基于光整流效应产生高功率太赫兹波;另一束作为探测光,采用正交平衡探测法探测。利用该光路产生太赫兹脉冲并对其进行单次测量,系统的时间窗口为16.8 ps,频谱范围覆盖0.1～1.6 THz。     

少层PtSe2中光生载流子超快动力学研究

二维PtSe₂具备宽可调带隙、高稳定性等优点,在新型光电器件方面具有极大应用价值。利用时间分辨太赫兹光谱研究了不同厚度PtSe₂中的光生载流子超快动力学,发现该材料瞬态太赫兹光电导的幅度及其激发光强度依赖性随材料厚度的增加呈现出显著的非线性增加趋势。通过太赫兹光电导频谱分析,获得了光生载流子浓度、散射时间、背散射因子等动力学参数,并结合激发波长依赖的太赫兹弛豫动力学,推测束缚激子和自由载流子的竞争是引起这种厚度非线性关系的主要原因。此外,基于光泵浦-光探测光谱证明了PtSe₂中的激子效应及半导体-半金属转变。该工作演示了层数对PtSe₂中非平衡态动力学的有效调控,对贵金属基二维材料在光电器件方面的应用具有指导意义。     

基于光栅倾斜脉冲前沿的太赫兹脉冲单次测量

太赫兹脉冲单次测量技术对于不可逆或者单次超快过程的太赫兹光谱研究具有重要意义。为了实现无畸变的高频率分辨率的太赫兹脉冲单次探测,利用光栅产生了一束具有倾斜前沿的飞秒探测脉冲,并利用该探测脉冲实现了对太赫兹脉冲时域电场波形的单次测量,测量时间范围达到20 ps,频谱覆盖0.1 THz~2.5 THz范围。且测量的结果与使用传统电光采样方法测量的结果相符合。对于基于光栅产生倾斜脉冲前沿的太赫兹脉冲单次测量方法进行了建模分析,获得了光栅和光学元件参数的选取,以及光路设计等指导性结论。     

飞秒激光成丝过程中的太赫兹波超光速传输现象研究

通过使用太赫兹(Terahertz,THz)时域光谱系统,探测从不同长度飞秒激光光丝辐射出的THz脉冲,观察到THz波在飞秒激光成丝过程中超光速传输的实验现象。进一步的分析表明:THz波在等离子体光丝区域的折射率小于其在空气中的折射率,这是使得THz波能够在成丝过程中超光速传输的主要原因。由此可以推测:THz脉冲极有可能是在等离子体光丝中进行导引传输的。最后,通过数值模拟获得了光丝区域内的THz本征模式,从而验证了上述推测。     

基于光学技术的太赫兹相干辐射源研究

由于太赫兹辐射的独特性质和潜在的应用价值, 国内外关于太赫兹波的产生和探测的研究正呈现日益繁荣的景象, 目前太赫兹相干辐射源的研究已成为太赫兹技术领域最重要的前沿课题之一。介绍了产生太赫兹相干辐射的三种主要途径：一是光学技术, 它从高频向低频发展, 其代表为太赫兹激光器, 如气体激光器、半导体激光器和量子级联激光器等; 二是电子学技术, 它由低频向高频发展, 如微波管、固体微波源等; 三是光电子技术, 其频率由1 THz向两侧展宽, 采用超快激光脉冲触发产生太赫兹脉冲。设计了基于光学技术的太赫兹相干辐射系统, 该装置根据气体振转能级跃迁原理, 采用高压直流激励方式产生受激辐射, 波导管谐振腔体, 工作气体为N2, CD4和D2, 经过优化设计, 预计可以产生1.54 THz和1.58 THz的波连续输出。     

光激发半导体硅片对宽带太赫兹波的调制研究

利用光泵浦-太赫兹(THz)探测(OPTP)技术,研究 了THz波在Si半导体界面间的传输行为。通过改变抽 运光密度从而改变样品表面的载流子浓度,实现对THz波透射/反射的有效调制。在外加中心 波长为800nm 的飞秒激光激发块体半导体Si片时,成功实现了对宽带THz波时域谱包括入射THz 脉冲振幅和 相位以及THz波次级反射峰抗反射的调制。光激发Si片可以获得任意载流子浓度 的Si片实现对 THz脉冲振幅的调制,调制度达到90%以上;光激发Si片能够使THz脉 冲的相位发生负延迟,随着 泵浦光密度的增加,负的相移越来越明显,随着频率的增高,负的相移也越来越明显;光激 发Si片还能够 对THz波的次级反射峰进行调制,随着泵浦光密度的改变,实现对次级反射峰的π相位以及 次级反 射峰抗反射的调制。光激发Si片对宽带THz波时域谱的调制为THz波在通信、国防安全等领域 的应用奠定了基础。     

基于二维碲烯的太赫兹光电探测器

制备了金属-碲烯-金属的太赫兹光电探测器,实现了毫米波-太赫兹波下的光探测。结果表明,基于对数天线碲烯的太赫兹光电探测器在零偏压下具有较高的光响应率（40 mA /W,0.12 THz）,响应时间为8 μs,噪声等效功率（NEP）为4 pW·Hz^-0.5。研究结果为高性能室温太赫兹光探测提供了一种新的发展路径。     

ZnSe纳米晶材料的超快吸收谱

通过改进的溶剂热方法,以KBH4作为还原剂,在三乙胺溶液介质中制备了ZnSe纳米晶材料.与ZnSe体材料相比,其纳米材料的稳态吸收边发生了蓝移,而且纳米颗粒的尺寸越小,蓝移量越大,这是由于随着尺度减少而引起的量子限制效应增强造成的.对在溶液中的ZnSe纳米颗粒的超快吸收谱的研究表明,当纳米颗粒的平均尺寸为75nm时,电子-声子散射时间为8.74ps;当平均尺寸为45nm时,散射时间为2.77ps.随着纳米颗粒尺寸的减小,载流子与颗粒表面的非弹性碰撞几率增加,从而使载流子-声子耦合的强度增强,导致载流子-声子散射时间缩短.     

不同核心尺寸及壳层厚度CdTe/CdS量子点非线性光学及超快动力学特性

CdTe核壳结构半导体量子点具有特殊的非线性光学和超快动力学特性,使其在太阳能电池、光电子器件、生物标记和光纤传感领域有着广泛的应用前景。主要研究了6种不同核心尺寸、不同壳层厚度CdTe/CdS核壳结构半导体量子点的非线性光学和超快动力学特性。在波长400 nm、脉冲宽度130 fs激光脉冲作用下采用Z-Scan技术测量了样品的非线性吸收和非线性折射系数。实验结果表明,CdTe/CdS核壳结构量子点的壳层厚度影响非线性吸收和非线性折射特性,非线性吸收和非线性折射系数均随壳层厚度增加而增大。核心尺寸主要影响非线性吸收特性,非线性吸收系数随核心尺寸的增大而减小。在波长400 nm、脉冲宽度130 fs、频率1 kHz、单脉冲能量400 nJ条件下采用飞秒时间分辨瞬态吸收光谱技术测量了样品的超快动力学特性,得到了瞬态吸收光谱和超快动力学曲线。结果表明漂白信号上升过程时间随壳层厚度的增加而变大。快过程衰减时间随着壳层厚度的增加而变大,同时随着核心尺寸增加而增长;慢过程衰减时间随着壳层厚度的增加而变大。研究揭示了CdTe核壳结构量子点的核心尺寸、壳层厚度对非线性光学和超快动力学的影响规律,为核壳结构量子点的制备和光物理特性研究提供了理论基础。     

导电聚苯胺在太赫兹波段的光电性能研究

导电聚苯胺是一种掺杂高分子半导体,内部含有大量的自由载流子,同时含有大量被束缚的载流子。本文利用太赫兹时域光谱装置测量了不同电导率的聚苯胺在0.3～2.8 THz的光谱特性,得到了其在太赫兹波段的吸收系数、折射率和介电常数等光电参数。研究了电导率对其吸收系数、折射率和介电常数的影响,对半导体材料中载流子与太赫兹波的相互作用的研究具有重要意义。     

基于氧化钼薄膜的光控太赫兹传输特性研究

本文采用热蒸发法制备了沉积在硅片上的200nm 氧化钼(MoO₃)的太赫兹调制薄膜。 在室温条件下,通过傅里叶光谱仪和太赫兹时域光谱系统(THz-TDS)技术,研究了MoO₃薄膜在不同激励光功率下的太赫兹传输特性。提出了薄膜重要光学参数的提取模型,利用透 射式太赫兹时域光谱技术测量了薄膜的时域信号,分别计算了太赫兹波在薄膜中的透过率及 调制效率及薄膜的复介电常数变化。结果表明,在980 nm激光器条件 下,随着激光器功率 的提高,MoO₃薄膜的太赫兹调制深度逐渐增加。在激光功率为266 mW时,在0.26 THz处 透过率达到最低为61%,调制效率(Modulation factor)达到最高为10%。通过分析MoO₃薄膜 的复介电常数及载流子密度变化,得出了激发生成的载流子浓度的提高导致介电常数的改变 , 增强了薄膜的导电性,从而减低了太赫兹波在薄膜中的透过率的结论。为MoO₃薄膜应用在 太赫兹波段调制领域提供了实验数据。     

Ultrafast Photo-Thermal Switching of Terahertz Spin Currents

Dissipationless and scattering-free spin-based terahertz electronics is the futuristic technology for energy-efficient information processing. Femtosecond light pulse provides an ideal pathway for exciting the ferromagnet (FM) out-of-equilibrium, causing ultrafast demagnetization and superdiffusive spin transport at sub-picosecond timescale, giving rise to transient terahertz radiation. Concomitantly, light pulses also deposit thermal energy at short timescales, suggesting the possibility of abrupt change in magnetic anisotropy of the FM that could cause ultrafast photo-thermal switching (PTS) of terahertz spin currents. Here, a single light pulse induced PTS of the terahertz spin current manifested through the phase reversal of the emitted terahertz photons is demonstrated. The switching of the transient spin current is due to the reversal of the magnetization state across the energy barrier of the FM layer. This demonstration opens a new paradigm for on-chip spintronic devices enabling ultralow-power hybrid electronics and photonics fueled by the interplay of charge, spin, thermal, and optical signals.     

Electronic properties of Ge nanocrystals for non volatile memory applications

Charge and discharge phenomena of Germanium nanocrystals fabricated by low pressure chemical vapor deposition are investigated by means of Capacitance–Voltage and capacitance decay measurements. The study shows fast programming and erasing times as compared with conventional devices. It is shown that the charge saturation depends on the gate voltage stress in the low electric field regime. For high gate voltages, a saturation of the stored charge is obtained, indicating that the density of trapped carriers in Ge nanocrystals is limited and depends only on the dots size. Capacitance decay measurements exhibits a very long retention time for holes as compared with silicon nanocrystal memories. This is mainly due to the barrier height for holes at the nc-Ge/ ₂ interface. A model for simulation of the retention kinetics has been developed and allows to extract the band alignment of the nc-Ge/SiO₂/Si system. The simulation results are then used to determine the band gap energy of Ge nanocrystals. Finally, it is shown that Ge nanocrystals are very good candidates for P-type Metal Oxide Semiconductor nonvolatile memories.     

Transient Suppressor Design with Varistor Composite Materials

The following paper describes the electrical behavior of varistor composite materials. These are powder-filled resin materials. Each powder particle is electrically conductive with a thin dielectric outer layer. This layer exhibits threshold conductivity like a Zener diode giving the bulk material a conductivity like a ?soft? Zener with a parallel capacitance which is voltage-dependent. This paper shows analytical expressions to fit empirical data. These expressions are then used to describe the material and system response to a general exponential transient pulse. One of the results is that the material essentially absorbs fast pulses capacitively, and then dissipates the charge resistively over longer times. This capacitance-resistance characteristic time is essentially constant for all voltages above the conduction knee. The derivations are carried through, and graphs plotted for, a specific example case of the ?standard? DOD-HDBK-263 15-kV electrostatic discharge (ESD) pulse with a 0.15-?s decay time and a material capacitance-resistance time of 0.4 ?s. The analytical and graphical techniques are shown for solving the system response for a general exponential transient.     

Volatile Ultrafast Switching at Multilevel Nonvolatile States of Phase Change Material for Active Flexible Terahertz Metadevices

Phase change materials provide unique reconfigurable properties for photonic applications that mainly arise from their exotic characteristic to reversibly switch between the amorphous and crystalline nonvolatile phases. Optical pulse based reversible switching of nonvolatile phases is exploited in various nanophotonic devices. However, large area reversible switching is extremely challenging and has hindered its translation into a technologically significant terahertz spectral domain. Here, this limitation is circumvented by exploiting the semiconducting nature of germanium antimony telluride (GST) to achieve dynamic terahertz control at picosecond timescales. It is also shown that the ultrafast response can be actively altered by changing the crystallographic phase of GST.  The ease of fabrication of phase change materials allows for the realization of a variable ultrafast terahertz modulator on a flexible platform. The rich properties of phase change materials combined with the diverse functionalities of metamaterials and all-optical ultrafast control enables an ideal platform for design of efficient terahertz communication devices, terahertz neuromorphic photonics, and smart sensor systems.     

Ultrafast Plasmon Thermalization in Epitaxial Graphene Probed by Time-Resolved THz Spectroscopy

The control of carrier transport by electrical, chemical, or optical Fermi level tuning is central to graphene electronics. Here, an optical pump—terahertz (THz) probe spectroscopy—is applied to investigate ultrafast sheet conductivity dynamics in various epitaxially grown graphene layers representing a large variety of carbon allotropes, including H₂ intercalated films. The graphene layers display a prominent plasmonic response connected with induced THz transparency spectra on ultrashort timescale. It is generally believed that the plasmonic excitations appear due to wrinkles, and substrate terraces that bring about natural confinement potentials. It is shown that these potentials act within micrometer-sized domains with essentially isotropic character. The measured ultrafast dynamics are entirely controlled by the quasi-Fermi level of laser-excited carriers through their temperature. The photocarriers undergo a disorder-enabled super-collision cooling process with an initial picosecond transfer of the optically deposited heat to the lattice followed by a sub-nanosecond relaxation governed by the lattice cooling. The transient spectra is described by a two-temperature Drude-Lorentz model revealing the ultrafast evolution of the carrier temperature and chemical potential and providing crucial material parameters such as Fermi energy, carrier mobility, carrier confinement length, and disorder mean free path.