Correlation between the method of preparation and the properties of the sol–gel HfO2 thin films

This work describes the preparation of HfO₂ thin films by the sol–gel method, starting with different precursors such as hafnium ethoxide, hafnium 2,4-pentadionate and hafnium chloride. From the solution prepared as mentioned above, thin films on silicon wafer substrates have been realized by ‘dip-coating’ with a pulling out speed of 5 cm min^?1. The films densification was achieved by thermal treatment for 10 min at 100 °C and 30 min at 450 °C or 600 °C, with a heating rate of 1 °C min^?1. The structural and optical properties of the films are determined employing spectroellipsometric (SE) measurements in the visible range (0.4–0.7 μm), transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). The main objective of this paper was to establish a correlation between the method of preparation (precursor, annealing temperature) and the properties of the obtained films. The samples prepared from pentadionate and ethoxide precursors are homogenous and uniform in thickness. The samples prepared starting from chloride precursor are thicker and proved to be less uniform in thickness. Higher non-uniformity develops in multi-deposition films or in crystallized films. A nano-porosity is present in the quasi-amorphous films as well in the crystallized one. For the samples deposited on silicon wafer, the thermal treatment induced the formation of a SiO₂ layer at the coating–substrate interface.     

Fabrication and characterization of transparent conductive ZnO:Al thin films prepared by direct current magnetron sputtering with highly conductive ZnO(ZnAl2O4) ceramic target

Using a highly conductive ZnO(ZnAl₂O₄) ceramic target, c-axis-oriented transparent conductive ZnO:Al₂O₃ (ZAO) thin films were prepared on glass sheet substrates by direct current planar magnetron sputtering. The structural, electrical and optical properties of the films (deposited at different temperatures and annealed at 400°C in vacuum) were characterized with several techniques. The experimental results show that the electrical resistivity of films deposited at 320°C is 2.67×10⁻⁴ Ω cm and can be further reduced to as low as 1.5×10⁻⁴ Ω cm by annealing at 400°C for 2 h in a vacuum pressure of 10⁻⁵ Torr. ZAO thin films deposited at room temperature have flaky crystallites with an average grain size of ∼100 nm; however those deposited at 320°C have tetrahedron grains with an average grain size of ∼150 nm. By increasing the deposition temperature or the post-deposition vacuum annealing, the carrier concentration of ZAO thin films increases, and the absorption edge in the transmission spectra shifts toward the shorter wavelength side (blue shift).     

Improving the performance of amorphous and crystalline silicon heterojunction solar cells by monitoring surface passivation

The influence of thermal annealing on the crystalline silicon surface passivating properties of selected amorphous silicon containing layer stacks (including intrinsic and doped films), as well as the correlation with silicon heterojunction solar cell performance has been investigated. All samples have been isochronally annealed for 1 h in an N₂ ambient at temperatures between 150 °C and 300 °C in incremental steps of 15 °C. For intrinsic films and intrinsic/n-type stacks, an improvement in passivation quality is observed up to 255 °C and 270 °C, respectively, and a deterioration at higher temperatures. For intrinsic/n-type a-Si:H layer stacks, a maximum minority carrier lifetime of 13.3 ms at an injection level of 10¹⁵ cm^? 3 has been measured. In contrast, for intrinsic/p-type a-Si:H layer stacks, a deterioration in passivation is observed upon annealing over the whole temperature range. Comparing the lifetime values and trends for the different layer stacks to the performance of the corresponding cells, it is inferred that the intrinsic/p-layer stack is limiting device performance. Furthermore, thermal annealing of p-type layers should be avoided entirely. We therefore propose an adapted processing sequence, leading to a substantial improvement in efficiency to 16.7%, well above the efficiency of 15.8% obtained with the ‘standard’ processing sequence.     

Enhancement of ferroelectricity in the compositionally graded (Pb,Sr)TiO3 thin films derived by a sol–gel process

The compositionally graded Pb_1−xSr_xTiO₃ (PST) films with a fine compositional gradient from Pb_0.6Sr_0.4TiO₃ to Pb_0.3Sr_0.7TiO₃ were fabricated on LNO-buffered Pt/Ti/SiO₂/Si substrates by a sol–gel deposition method. The graded films crystallized into a pure perovskite structure and exhibited highly (1 0 0) preferred orientation after post-deposition annealing. Dielectric and ferroelectric properties were investigated as a function of temperature, frequency and direct current bias field. Dielectric constant peaks, common to a ferroelectric transition, were not observed in the temperature range of 25–250 °C within which the dielectric constant showed weak temperature dependence. This compositionally graded thin film can result in a dielectric constant more than double and a remanent polarization at least two and a half times larger than conventional PST thin films.     

Ultra-high thermal expansion glass–ceramics in the system MgO/Al2O3/TiO2/ZrO2/SiO2 by volume crystallization of cristobalite

Glasses in the system MgO/Al₂O₃/TiO₂/ZrO₂/SiO₂ with and without the addition of As₂O₃ and Sb₂O₃ were thermally treated. Up to a temperature of 950 °C, this resulted in the formation of ZrTiO₄, sapphirine and high quartz solid solution. Annealing at higher temperatures led to the formation of low quartz solid solutions, ZrTiO₄ and sapphirine. This resulted in a continuous increase of density, hardness, fracture toughness and thermal expansivity. In the glass doped with As₂O₅ and Sb₂O₅ annealing temperatures >1000 °C resulted in the formation of cristobalite instead of quartz. Then the density, hardness and strength decreased again, while the fracture toughness (up to 2.8 MPa m^1/2) and the thermal expansion coefficient increased strongly. In the dilatometric curves, a steep increase in expansion is observed in the temperature range from 100 to 200 °C, which is attributed to the transformation of low cristobalite to high cristobalite. The mean linear thermal expansion coefficient (25–200 °C) is 20 × 10^?6 K^?1 and the largest up to now reported in the literature for alkali-free silicate glass–ceramics.     

Optical investigations of germanium nanoclusters – Rich SiO2 layers produced by ion beam synthesis

In this work, refractive index and extinction coefficient spectra of germanium nanoclusters – rich SiO₂ layers have been determined using variable angle spectroscopic ellipsometry (VASE) in the 250–1000 nm range. The samples were produced by Ge⁺ ion implantation into SiO₂ layers on Si substrates and subsequent annealing at temperatures from 700 to 1100 °C. It is known from previous investigations of similar samples that the Ge nanoclusterization process starts already at 800 °C and spherical Ge nanocrystallites 5–8 nm in diameter are observed in the SiO₂ layers after annealing for 1 h at even higher temperatures of 1000–1100 °C. Rutherford backscattering spectrometry (RBS) was employed to measure the Ge atom concentration depth profiles in the studied samples. The RBS results helped us choose realistic models for the VASE analysis which were necessary for a proper interpretation of the VASE data. It has been found that the refraction index value for the SiO₂/Si layer increases after Ge implantation. This effect can be explained by a defect-dependent compaction of ion-bombarded layers. A band’s tail in the extinction coefficient spectra for all the samples is observed which originates from a strong ultraviolet absorption band at 6.8 eV due to a Germanium Oxygen-Deficiency Center (GeODC) and/or a Ge-E’center in SiO₂. The annealing process results in the emergence of weaker extinction coefficient bands in the 400–600 nm region, associated with direct band-to-band transitions in Ge nanostructures. Transformation of these bands, including their blue-shift with the increasing annealing temperature could be explained via a quantum-confinement mechanism, by size and structural changes in Ge nanostructures.     

Hydrothermal synthesis of BaTiO3 thin films on nanoporous TiO2 covered Ti substrates

It is well known that there is an upper limit (<0.25 μm) for the thickness of hydrothermal thin films grown on Ti substrate in the 100–200 °C temperature range, even the reaction time is extended to several weeks. In this paper, BaTiO₃ thin films have been firstly hydrothermally synthesized on titanium substrates covered with a nanoporous TiO₂ layer. By using TiO₂ covered substrates, the thickness of BaTiO₃ films can easily reach ∼1.0 μm at 110 °C after only 2 h hydrothermal treatment. It is found that the large quantity of pores with size at the tens of nanometer range in the oxide layer served as easy paths for the diffusion of Ba²⁺ and OH⁻ and enabled the film grow thicker. SEM and XRD results show that the films are crack-free and in polycrystalline phase.     

Effect of OH-content on thermal and chemical properties of SnOP2O5 glasses

Glasses with 55–60 mol% SnO and 40–45 mol% P₂O₅ have shown extremely large differences in the chemical and thermal properties depending on the temperature at which they were melted. Glasses prepared at low melting temperature, 450–550 °C, had low T_g, 150–200 °C, and low chemical stability. Glasses prepared at high melting temperature, 800–1200 °C, had much higher T_g, 250–300 °C, and much higher chemical stability. No significant differences were found by ¹¹⁹Sn Mössbauer and ³¹P Nuclear Magnetic Resonance spectroscopy. Large differences in the OH-content could be detected as the reason by infrared absorption spectroscopy, thermal analyses, and ¹H Nuclear Magnetic Resonance spectroscopy. In samples with low T_g, a broad OH – vibration band around 3000 nm with an absorption intensity >20 cm^?1, bands at 2140 nm with intensity ～5 cm^?1, at 2038 nm with intensity ～2.7 cm^?1, and at 1564 nm with intensity ～0.4 cm^?1 were measured. These samples have shown a mass loss of 3–4 wt% by thermal gravimetric analyses under argon in the temperature range 400–1000 °C. No mass loss and only one broad OH-band with a maximum at 3150 nm and low absorption intensity <4 cm^?1 could be detected in samples melted at high temperature, 1000–1200 °C, which have much higher T_g, ～300 °C, and much higher chemical stability.     

Effect of isothermal annealing and visible-light illumination on the AC-impedance behavior of undoped selenium thin films

The effect of post-deposition isothermal annealing (30 °C ? T_A ? 70 °C) and visible-light illumination on the complex AC-impedance of undoped selenium thin films deposited at the substrate temperatures T_S = 30, 50, 70 °C has been studied in the frequency range 0.2–12 kHz. The AC-impedance of amorphous selenium (a-Se) films (T_S, T_A < 50 °C) was mainly capacitive, with no loss peaks being observed in their Z″(ω)–ω curves, irrespective of illumination. This behavior was ascribed to a dominant charge-carrier trapping effect of bulk/surface charged defects usually present in a-Se. On the other hand, the measured Z″(ω)–Z′(ω) diagrams of illuminated polycrystalline Se samples (50 °C ? T_S, T_A ? 70 °C) exhibited almost full semicircles, whereas their Z″(ω)–ω curves revealed prominent loss peaks at well-defined frequencies. As the annealing temperature or light intensity is increased the loci of the points determined by intersections of these semicircles with the Z′-axis at the low-frequency side shift greatly towards the origin, while the loss-peak positions shift to higher frequencies. These experimental findings were explained in terms of a significant increase in electrical conductivity of selenium films due to thermally-induced crystallization at temperatures beyond glass-transformation region of undoped selenium and to creation of electron–hole pairs by visible-light illumination.     

Nanostructural and optical features of amorphous AlxSi0.45−xO0.55 (0 ⩽ x ⩽ 0.05) thin films prepared by RF-magnetron sputter techniques

The nanostructural, chemical, and optical features of Al_xSi_0.45−xO_0.55 (0 ⩽ x ⩽ 0.05) thin films were investigated in terms of Al concentration and post-deposition annealing conditions; the films were prepared by co-sputtering a Si main target and Al-chips, and the annealing was carried out at temperatures of 400–1100 °C. The a-Si_0.45O_0.55 films prepared without Al-chips and annealed at 800 °C contain ∼3.5 nm-sized Si nanocrystallites. The photoluminescence (PL) intensity as well as the volume fraction of Si nanocrystallites increased with increasing the concentration of Al to a certain level. In particular, the intensity of the PL spectra of the Al_0.025Si_0.425O_0.550 films which were annealed at 800 °C increased significantly at wavelengths of ∼580 nm. It is highly likely that the observed increase in the PL intensity is caused by the raise in the total volume of the ∼3.5 nm-sized nanocrystallites in the films. The addition of Al as well as the post-deposition annealing allow adjustment and control of the nanostructural and light-emission features of the a-SiO_x films.     

Synthesis and characterization of hafnium oxide and hafnium aluminate ultra-thin films by a sol–gel spin coating process for microelectronic applications

Currently there are intense industry-wide efforts in searching for new high dielectric constant (high-k) materials for use in future generations of ultra-large scale integrated circuits (ULSI). There are number of requirements for the new high-k materials, such as high dielectric constant, thermal stability (400 °C or higher), high mechanical strength, and good adhesion to neighboring layers. Oxide spinels comprise a very large group of structurally related compounds many of which are of considerable technological significance. Spinels exhibit a wide range of electronic and magnetic properties in particular nickel, hafnium, cobalt, containing spinels. In the present investigation, crack free, dense polycrystalline monoclinic structure of pure HfO₂, and Al₂HfO₅ ultra-thin films have been prepared by a simple and cost effective sol–gel spin coating method. The formation of the monoclinic HfO₂ phase at 600 °C and complete formation of the single phase Al₂HfO₅ at 800 °C has been reported. The composition of the annealed films has been measured and found to be 70 at.% of O, 30 at.% of Hf for HfO₂ and 22 at.% of Al, 12 at.% of Hf and 66 at.% of O for Al₂HfO₅ films, which are close to the stoichiometry of the HfO₂ and Al₂HfO₅ thin films.     

Characteristics of heteroepitaxial Cu2−xMnxO/Nb–SrTiO3 p–n junction

Mn-doped cuprous oxide Cu_2?xMn_xO (CMO), where x = 0.03, is a p-type diluted magnetic semiconductor (DMS) with Curie temperature above room temperature [M. Wei, N. Braddon, et al., Appl. Phys. Lett. 86 (2005) 0725141; Y.L. Liu, S. Harrington, et al., Appl. Phys. Lett. 87 (2005) 222108]. We have grown CMO (x = 0.03) thin films of about 200 nm thick on n-type semiconducting (0 0 1)Nb–SrTiO₃(NSTO) single crystal substrates by pulsed laser deposition. Cubic crystalline phases of CMO layers were obtained in a narrow deposition pressure window of about 20 mTorr at growth temperature of 650 °C. X-ray diffraction and TEM studies of these heterostructures reveal a cube-on-cube epitaxial relationship of [CMO]₀₀₁/[NSTO]₀₀₁. All the oxide p–n junctions with the size of 500 × 500 μm were fabricated by the shadow masking technique. These junctions show highly asymmetric I–V characteristics. The rectification ratio at room temperature is about 10³ at ±2 V. Leakage current density of 10^?4 A cm^?2 at ?1 V is observed. No apparent junction breakdown is recorded at reverse bias voltages down to ?5 V. From the 1/C²–V plots, the forward bias turn on voltage is ～1.4 V. Clear junction current rectifying property is maintained at up to 200 °C. Our results have demonstrated that epitaxial CMO films can be fabricated on lattice matched cubic substrates. They are suitable DMS for above room temperature spintronic junction applications.     

Effect of vacuum annealing on charge transport and trapping in a-Si1 − xCx:H/c-Si heterostructures

The processes of charge transport and trapping in amorphous Si_1 ? xC_x:H films deposited on crystalline p-type Si wafers and annealed in vacuum in the temperature range 300–650 °C have been evaluated. Current–voltage (I–V), capacitance–voltage (C–V) and admittance–temperature (G–T) characteristics were measured in the temperature range 100–350 K. The spectrum of thermal effusion of hydrogen was measured from room temperature up to 1000 °C.C–V characteristics indicate a slight increase of the dielectric constant k and a large hysteresis after annealing at 450 °C. The hysteresis is believed to be associated with mobile hydrogen effusion from the a-SiC:H film, and it is not seen after a 650 °C anneal. From I–V data the maximum rectification ratio is observed after annealing at 450 °C. Variable-range hopping (VRH) conduction at the Fermi level is found to dominate the forward current of the as-deposited structure. After annealing at 450 °C the forward current can be described by space-charge limited (SCL) mechanisms with trapping at shallow levels with energy of about 0.12 eV. After annealing at 650 °C the process of VRH conduction appears again, but the density of hopping sites is much higher than in the as-grown sample. From admittance spectra, the energy position of respective traps in a-SiC:H is at (E_V + 0.45) eV for as-deposited material and it decreases slightly after vacuum annealing. On the basis of these results, an energy band diagram of the a-Si_1 ? xC_x:H/p-Si structure annealed at 450 °C is proposed.     

Formation of Co2+-doped nanocrystals in La2O3–MgO–Al2O3–SiO2 glass-ceramics

Transparent glass-ceramics were synthesized by heat-treatment of glass with a composition of 5La₂O₃–13.2MgO–28.8Al₂O₃–46SiO₂–4.5TiO₂–2.5ZrO₂–0.15CoO (LMAS) (wt.%). The activation energy of crystallization and the Avrami parameter for the LMAS glass were determined from the DTA curves at different heating rates. The most two intense bands of Raman spectrum of initial glass at ~ 810 cm^?1 and ~ 900 cm^?1 were connected with the presence of [SiO₄] and [TiO₄] tetrahedral, respectively. After heat-treated at 700 °C/10 h+820 °C/8 h, the intensity of the band for [TiO₄] tetrahedral weakened, while an intensive band at ~ 800 cm^?1 for the Ti–O bond appeared. Other bands were characteristics of high-silicate network and x(MgTi₂O₅)·y(Al₂TiO₅) polycrystals. The changes reflected phase separation after heat-treatment of the initial glass. The strong absorption band of glass-ceramics centered at 580 nm can be assigned to ⁴A₂(⁴F)→⁴T₁(⁴P) and the broad absorption band at 1100–1700 nm to ⁴A₂(⁴F)→⁴T₁(⁴F) transitions of tetrahedral coordinated Co²⁺ ion. Two broad emission bands, one was around 660 nm, the other was from 800 nm to 1050 nm, of glass-ceramics correspond to the ⁴T₁(⁴P)→⁴A₂(⁴F) and ⁴T₁(⁴P)→⁴T₂(⁴F) transitions of tetrahedral coordinated Co²⁺ ions. The absorption and emission features clearly demonstrated that Co²⁺ ions were incorporated into nanocrystals and located in tetrahedral sites.     

Evolution of magnetic and structural properties of TiO2 with Co-doping

This paper presents the phase formations and magnetic properties of Co-doped TiO₂ synthesized by the colloidal and ammonium nitrate melt techniques (ANMT). The phase formations and ferromagnetic properties were studied with XRD and SQUID magnetometry. Crystallization of the TiO₂ rutile lattice was completed at 1000 °C and that was preserved during annealing up to 1300 °C. For the samples annealed at 1200 °C, elemental analysis has shown that the colloidal technique leads to a single-phase rutile with cobalt concentration of almost nothing even in the initially 0.5 mol Co-added samples. Further increase of annealing temperature results in the appearance of other Ti-phases in addition to the rutile. On the other hand, it is quite interesting that these samples show ferromagnetic behavior. The samples synthesized by the ANMT method contain larger amounts of Co compared to the colloidal technique.     

Incipient amorphous-to-crystalline transition in HfO2 as a function of thickness scaling and anneal temperature

A series of 1.4, 1.8, and 4.0 nm thick HfO₂ films deposited on Si(1 0 0) substrates have been measured by extended X-ray absorption fine-structure prior to anneal processing, following a standard post deposition anneal of 700 °C for 60 s in NH₃ ambient, and following an additional rapid thermal anneal cycle of 1000 °C for 10 s in N₂ ambient. Analysis of the second coordination shell gives clear evidence of increased ordering with increasing film thickness at each temperature. Similarly, increased ordering with increasing anneal temperature is evident for each film thickness. Although X-ray diffraction and high resolution transmission electron microscopy indicated the 1.4 nm HfO₂ samples to be amorphous, EXAFS has distinguished nanocrystalline from amorphous states for these films.     

Non-isothermal crystallization kinetic studies on MgO–Al2O3–SiO2–TiO2 glass

Thermal stability and crystallization kinetics of the glass 21% MgO, 21.36% Al₂O₃, 53.32% SiO₂ and 4.11% TiO₂ (mol%) has been studied using differential thermal analysis (DTA), dilatometry and X-ray diffraction (XRD). Glass in both bulk and frit forms were produced by melting in platinum crucible at 1600 °C for 1–2 h. From variation of DTA peak maximum temperature with heating rate, the activation energies of crystallization were calculated to be 340 kJ mol⁻¹ and 498 kJ mol⁻¹ for first and second crystallization exotherms, respectively. Crystallization of bulk glass was carried out at various temperatures and for different time durations in the range of 850–1000 °C. The influence of the addition of TiO₂ on the crystallization sequence of the glass was experimentally determined and discussed.     

Dilithium dialuminium trisilicate phase obtained using coal bottom ash

The Li₂Al₂Si₃O₁₀ glass-ceramics well crystallized and with a regular morphology was produced starting from a mixture of Li₂CO₃, TiO₂, Al₂O₃ and coal bottom ash, after reducing the magnetite phase content. Its measured thermal expansion coefficient in the temperatures range from 25 °C to 300 °C is α_(25–300) = −23.4 × 10⁻⁷ °C⁻¹. This value is ≈18% smaller than that for the commercial lithium glass-ceramics (−23.4 × 10⁻⁷ °C⁻¹ to 50 × 10⁻⁷ °C⁻¹).     

Effect of thermal annealing and hydrogen-plasma treatment in boron-doped microcrystalline silicon

We have investigated the effects of temperature (during film growth and post-deposition thermal annealing) and H₂-plasma treatment on the electronic and structural properties of p-type microcrystalline silicon films (p-μc-Si:H) for solar cell applications. The highest dark conductivity is obtained in the thermally annealed p-μc-Si:H prepared at low substrate temperature of 50 °C. This dark conductivity is decreased by two orders of magnitude when the film is exposed to H₂-plasma, being completely restored after thermal annealing. Namely, reversible dual-conductivity cycle is observed between thermally annealed state and H₂-plasma-treated state in p-μc-Si:H. The dual-conductivity cycle is accompanied with the reversible change in the infrared-absorption spectrum at around 1845 cm^? 1 assigned as SiHB complex in p-μc-Si:H network structure. Taking into account of the reversible structural change by H₂-plasma-exposure and thermal-annealing cycles, necessary process-procedure condition has been proposed for obtaining high photovoltaic performance in thin-film-Si solar cells with high quality p-μc-Si:H.     

Effect of annealing temperature on the optical and electrical properties of aluminum doped ZnO films

Aluminum doped ZnO thin films were successfully deposited on the silicon substrates by spin coating method. The effects of an annealing temperature on electrical and optical properties were investigated for 1.5 at.% of aluminum. Refractive index profile has been obtained for the film annealed at 350 °C using ellipsometry and it has shown minimum refractive index of 1.95 and maximum value of 2.1. Thickness profile shows quite good uniformity of the film having minimum thickness value of 30.1 nm and maximum value of 34.5 nm. Maximum conductivity value obtained was 4.63 Ω^?1-cm^?1 for the film annealed at 350 °C. Maximum carrier density of 2.20 × 10¹⁷ cm^?3 was deduced from the Hall measurement and Fourier transform infrared spectroscopy clearly reveals major peak at 407 cm^?1 in the spectra associated with the ZnO bond.