Structural,dielectric properties and electrical conduction behaviour of Dy substituted CaCu3Ti4O12 ceramics

Dy substituted CCTO ceramics were synthesized using solid state reaction method. Effect of Dy on structural, microstructural, dielectric and electrical properties has been studied over a wide temperature (300–500 K) and frequency range (100 Hz–1 MHz). Rietveld refinement, carried out on the samples, confirmed single phase formation and indicated overall decrease in lattice constant. Microstructure showed bimodal distribution of grains in CCTO with bigger grains surrounded by smaller grains. Dy substitution reduced grain size. Dy substitution in CCTO reduces the dielectric constant which may be attributed to increase of the Schottky potential barrier. The dielectric constant remains nearly constant in temperature range 300–400 K. The AC conductivity obeys a power law, σ_ac=A fⁿ, where n is the temperature dependent frequency exponent. The AC conductivity behaviour can be divided into three regions, over entire temperature range, depending on conduction processes. The relevant charge transport mechanisms have been discussed.     

Giant dielectric permittivity and non-linear electrical behavior in CaCu3Ti4O12 varistors from the molten-salt synthesized powder

CaCu₃Ti₄O₁₂ (CCTO) powder has been prepared by a molten salt method using the NaCl–KCl mixture. Crystal structure and microstructure of the powder and the resulting ceramics have been characterized by using X-ray diffraction (XRD) and scanning electron microcopy (SEM). Impedance analyzer and current–voltage meter were employed to analyze dielectric and nonlinear (I–V) properties of the CCTO ceramics with different sintering durations and subsequent cooling rates. The values of dielectric permittivity and nonlinear coefficient of the quenched sample were found to be higher than those of the slowly cooled sample. More specifically, the cooling methods (quenching and furnace-cooling) have allowed to adjust; (?) the breakdown voltage within a rather low range of 0.3–4.4 kV cm⁻¹; (??) the nonlinear coefficient between 2 and 6 and (???) the giant dielectric permittivity for the ceramics within a range from 5000 to 20000. A double Schottky barrier can be evidenced from the linear behavior between the ln J and E^1/2 in grain boundary regions. The relationship between the electrical current density and the applied electrical field indicates that the potential barrier height Φ_B is holding time dependent.     

Effects of strontium/lanthanum co-doping on the dielectric properties of CaCu3Ti4O12 prepared by reactive sintering

The extremely high dielectric constant of the cubic perovskite CaCu₃Ti₄O₁₂ (CCTO) has attracted increasing attention for a variety of capacitive elements in microelectronic device applications. In this research, the influence of Sr and La replacing Ca and Cu, respectively, to simultaneously controlling the intrinsic properties of grain boundaries in a co-doped CCTO ceramic has been investigated. The preparation was done using high purity compounds milled and mixed by mechano-synthesis and further consolidated by reactive sintering without calcination. Characterization by XRD confirmed the formation of single-phase CCTO ceramic and a residual amount CaTiO₃. The microstructure and composition analyzed by SEM/EDX showed a smaller grain size for the co-doped CCTO. Impedance measurements indicated the smallest dielectric loss for the co-doped ceramics compare to pure and single-doped CCTO, while reaching a higher dielectric permittivity than single-doped ceramics. The CCTO-SrLa sample also showed high thermal stability of the dielectric permittivity between 100 and 470?K, and the lowest loss between 200 and 300?K. This behavior was attributed to the lower bulk resistance exhibited by the co-doped sample.     

Direct and hybrid microwave solid state synthesis of CaCu3Ti4O12 ceramic: Microstructures and dielectric properties

CaCu₃Ti₄O₁₂ (CCTO) electroceramic possesses unusual giant dielectric permittivity up to ε?=?10⁴ at low frequency range and room temperature. CCTO dielectric properties strongly depend on its microstructure therefore it is essential to pay attention to the processing techniques which impact grain size and microstructure. In this work, direct and hybrid microwave solid state synthesis was specifically designed and used for the synthesis of CCTO. The microwave process was also compared to the conventional process which involves usual infrared heating. The structural (XRD) and microstructural (SEM) characterizations indicate that microwave synthesis is particularly efficient to get rapidly pure CCTO powder. The fully automated 915?MHz single-mode microwave cavity used for hybrid synthesis allows a perfect control of the temperature distribution and heating rate. Therefore hybrid microwave synthesis leads to a fine, mono-disperse and practically pure CCTO powder in the range of 300 – 500?nm. The advantages of the hybrid microwave heating method are discussed and compared to the conventional and direct microwave heating processes. From the powders synthesized by the different routes, dense compacts were sintered in air at 1050?°C in a conventional furnace. Microstructural characterizations reveal abnormal grain growth during sintering which levels dielectric properties. All exhibit a giant dielectric constant ε?>?10³ at room temperature which decreases drastically to ε?=?90 at 10?K. Those properties are discussed according to the well-established Internal Barrier Layer Capacitor (IBLC) model.     

Preparation, characterization and dielectric properties of CaCu3Ti4O12 ceramics

CaCu₃Ti₄O₁₂ nano-sized powders were successfully prepared by sol-gel technique and calcination at 600-900 °C. The thermal decomposition process, phase structures and morphology of synthesized powders were characterized by IR, DSC-TG, XRD, TEM, respectively. It was found that the main weight-loss and decomposition of precursors occurred below 450 °C and the complex perovskite phase appeared when the calcination temperature was higher than 700 °C. Using above synthesized powders as starting materials, CCTO-based ceramics with excellent dielectric properties (?₂₅ = 5.9 × 10⁴, tan δ = 0.06 at 1.0 kHz) were prepared by sintering at 1125 °C. According to the results, a conduction mechanism was proposed to explain the origin of giant dielectric constant in CCTO system.     

Electrical properties of niobium doped Bi4Ti3O12-SrBi4Ti4O15 intergrowth ferroelectrics

Nb-doped Bi₄Ti₃O₁₂-SrBi₄Ti₄O₁₅ intergrowth ceramics have been prepared by modified oxalate route. XRD phase analysis confirmed the formation of single phase compound. Nb-doping does not affect the basic crystal structure of the intergrowth. SEM micrographs showed that the grain size of the ceramics decreases with Nb-doping. The temperature dependence of dielectric constant and losses was investigated in the temperature range 30–800 °C and frequency range 1 kHz–1 MHz. With Nb-doping, the T_c of the ferroelectrics reduces and peak permittivity increases. Doping also introduces small relaxor behavior in the ferroelectrics. The dc conductivity of the ceramics decreases with doping. The remnant polarization (P_r) of the intergrowth ferroelectrics is increased with Nb doping.     

Effect of La-doping on the properties of CaCu3Ti4O12 dielectric ceramics

Nano-size Ca_1−χLa_2χ/3Cu₃Ti₄O₁₂ (χ = 0.00, 0.05, 0.10, 0.15 and 0.20) precursor powders were prepared via the sol–gel method and the citrate auto-ignition route and then processed into micro-crystal Ca_1−χLa_2χ/3Cu₃Ti₄O₁₂ ceramics under heat treatment. Characterization of the as-obtained ceramics with XRD and SEM showed an average grain sizes of ∼1–2 μm, indicating La³⁺ amount to have little impact on grain size. The room-temperature dielectric constant of the Ca_1−χLa_2χ/3Cu₃Ti₄O₁₂ ceramics sintered at 1000 °C was of the order of 10³–10⁴ despite the variation of χ values. Compared with CaCu₃Ti₄O₁₂, La³⁺-doped CaCu₃Ti₄O₁₂ showed a flatter dielectric constant curve related to frequency. It was found that the loss tangent of the Ca_1−χLa_2χ/3Cu₃Ti₄O₁₂ ceramics was less than 0.20 in ∼600–10⁵ Hz region, which rapidly decreased to a minimum value of 0.03 by La³⁺doping with χ = 0.05. Our measurement of the ceramics conductivities (σ) also indicated that the appropriate introduction of La³⁺ into CaCu₃Ti₄O₁₂ would distinctly result in its dielectric properties.     

Microstructures and dielectric properties of spark plasma sintered Ba0.4Sr0.6TiO3/CaCu3Ti4O12 composite ceramics

(1 − x)Ba_0.4Sr_0.6TiO₃/xCaCu₃Ti₄O₁₂ composite ceramics were prepared by spark plasma sintering. Sintering behavior, microstructures and dielectric properties of the composite ceramics were investigated by XRD, SEM, EDS and dielectric spectrometer. Dense composite ceramics consisting of Ba_0.4Sr_0.6TiO₃ phase and CaCu₃Ti₄O₁₂ phase were prepared at 800 °C for 0 min. The dielectric loss of the composite ceramic decreased with increasing amount of Ba_0.4Sr_0.6TiO₃, and the high dielectric constant were retained. Moreover, the better temperature stability of dielectric constant was obtained. These improvements of dielectric characteristics have great scientific significance for potential application.     

ZnLi2/3Ti4/3O4: A new low loss spinel microwave dielectric ceramic

A new low loss spinel microwave dielectric ceramic with composition of ZnLi_2/3Ti_4/3O₄ was synthesized by the conventional solid-state ceramic route. The ceramic can be well densified after sintering above 1075 °C for 2 h in air. X-ray diffraction data show that ZnLi_2/3Ti_4/3O₄ ceramic has a cubic structure [Fd-3m (227)] similar to MgFe₂O₄ with lattice parameters of a = 8.40172 Å, V = 593.07 Å³, Z = 8 and ρ = 4.43 g/cm³. The best microwave dielectric properties can be obtained in ceramic with relative permittivity of 20.6, Q × f value of 106,700 GHz and τ_f value of −48 ppm/°C. The addition of BaCu(B₂O₅) (BCB) can effectively lower the sintering temperature from 1075 °C to 900 °C and does not induce much degradation of the microwave dielectric properties. Compatibility with Ag electrode indicates that the BCB added ZnLi_2/3Ti_4/3O₄ ceramics are good candidates for LTCC applications.     

Microwave dielectric properties of PTFE/CaTiO3 polymer ceramic composites

CaTiO₃ ceramic powder filled polytetrafluoroethylene (PTFE) composites with various filler volume fractions up to 60 vol.% were prepared. The effects of volume fraction of the ceramic filler on the microstructure and microwave dielectric properties of the composites were investigated in detail. As the volume fraction of the ceramic filler increases, the dielectric constant (?_r) and the temperature coefficient of resonant frequency (τ_f) of composites increase, while the product of quality factor and frequency (Q × f) decreases. Composites with 40 vol.% CaTiO₃ exhibited good microwave dielectric properties: ?_r = 13 at ∼5 GHz, Q × f = 930 GHz, and τ_f = 260 ppm/°C. Different mixing rules were used to predict the dielectric constant of composites, and it was found that the dielectric constants predicted by Effective Medium Theory (EMT) were in good agreement with experimental data.     

Conductivity-permittivity relations in oxygen deficient CaCu3Ti4O12

The correlation between conductance, capacitance and oxygen content is discussed in the colossal dielectric permittivity perovskite oxide CaCu₃Ti₄O₁₂. We found an unusual positive conductivity-permittivity relation which is very sensitive to the oxygen content. In particular, we ascribe the oxygen content sensitivity of both the capacitance and the conductance to a repositioning of charges on oxygen vacancy related defects and/or on the migration of the defects themselves. We find that in the charge repositioning process a Jonscher type of global conduction is accompanied by a Debye-type local electronic relaxation in and between the boundaries of a specific grain. A closer investigation of these processes suggest that the local polaronic relaxation of charges on oxygen vacancy related defects is mainly responsible for the large dielectric constant of CaCu₃Ti₄O₁₂ and also for the ac conduction at low to medium temperatures.     

Effect of Bi2O3 and B2O3 additives on the sintering temperature, microstructure, and microwave dielectric properties for Sm(Mg0.5Ti0.5)O3 ceramics

The microwave dielectric properties of Sm(Mg_0.5Ti_0.5)O₃ incorporated with various amount of Bi₂O₃ and B₂O₃ additives have been investigated systematically. In this study, both Bi₂O₃ and B₂O₃ additives acting as a sintering aid can effectively lower the sintering temperature from 1550 °C to 1300 °C. The ionic radius of Bi³⁺ for a coordination number of 6 is 0.103 nm, whereas the ionic radius of B³⁺ is 0.027 nm. Clearly, the ionic radius of Bi³⁺ is greatly larger than one of B³⁺, which resulted in the specimens incorporated with Bi₂O₃ having larger lattice parameters and cell volume than those incorporated with B₂O₃. The experimental results show that no second phase was observed throughout the entire experiments. Depending on the interfacial tension, the liquid phase may penetrate the grain boundaries completely, in which case the grains will be separated from one another by a thin layer as shown in Sm(Mg_0.5Ti_0.5)O₃ ceramics incorporated with Bi₂O₃. Whereas, in Sm(Mg_0.5Ti_0.5)O₃ ceramics incorporated with B₂O₃, the volume fraction of liquid is high, the grains may dissolve into the liquid phase, and rapidly rearrange, in which case contact points between agglomerates will be dissolved due to their higher solubility in the liquid, leading plate-like shape microstructure.A dielectric constant (?_r) of 29.3, a high Q × f value of 26,335 GHz (at 8.84 GHz), and a τ_f of −32.5 ppm/°C can be obtained for Sm(Mg_0.5Ti_0.5)O₃ ceramics incorporated with 10 mol% Bi₂O₃ sintered at 1300 °C. While Sm(Mg_0.5Ti_0.5)O₃ ceramics incorporated with 5 mol% B₂O₃ can effectively lower temperature coefficient of resonant frequency, which value is −21.6 ppm/°C. The Sm(Mg_0.5Ti_0.5)O₃ ceramic incorporated with heavily Bi₂O₃ and B₂O₃ additives exhibits a substantial reduction in temperature (∼250 °C) and compatible dielectric properties in comparison with that of an un-doped one. This implied that this ceramic is suitable for miniaturization in the application of dielectric resonators and filters by being appropriately incorporated with a sintering aid.     

Microstructure, electrical properties, and aging behavior of ZnO-Pr6O11-CoO-Cr2O3-Y2O3-Er2O3 varistor ceramics

The microstructure, electrical properties, and aging behavior of the ZnO-Pr₆O₁₁-CoO-Cr₂O₃-Y₂O₃-Er₂O₃ varistor ceramics were investigated for different contents of Er₂O₃. The microstructure consisted of ZnO grain and an intergranular layer (Pr, Y, and Er-rich phases) as a secondary phase. The increase of Er₂O₃ content decreased the average grain size and increased the sintered density. As the Er₂O₃ content increased, the breakdown field increased from 4206 V/cm to 5857 V/cm and the nonlinear coefficient increased from 32.6 to 48.6. The varistor ceramics added with 1.0 mol% Er₂O₃ exhibited excellent stability by exhibiting −0.2% in the variation rate of the breakdown field and −2.7% in the variation rate of the nonlinear coefficient for aging stress of 0.95 E_1 mA/150 °C/24 h.     

Magneto-electric properties of xNi0.7Zn0.3Fe2O4 – (1-x)BaTiO3 multiferroic composites

Di-phase ceramic composites, with general formula xNi_0.7Zn_0.3Fe₂O₄ – (1-x)BaTiO₃(x = 0.9, 0.7, 0.5, 0.3, 0.1), were prepared by a mixing method. X-ray analysis, for powder and ceramics, indicated the formation of ferrite and barium titanate phases without the presence of the impurities. SEM analysis indicated that the composite morphology contained two types of grains, polygonal and rounded. Homogeneous microstructure and the smallest grain size were obtained in ceramics with 70% of barium titanate. The electrical properties of these materials were investigated using impedance spectroscopy, dielectric and ferroelectric measurements. The NZF-BT(30-70) composite has shown better electrical properties in comparison to other investigated ceramics, confirmed by dielectric and ferroelectric data analysis. Saturation magnetization and coercive field decreased with the increase of the content of ferroelectric phase.     

Effects of Al2O3 addition on the microstructure and microwave dielectric properties of Ba4Nd9.33Ti18O54 ceramics

Ba₄Nd_9.33Ti₁₈O₅₄·x wt%Al₂O₃ (BNT-A) ceramics (x=0, 0.5, 1.0, 1.5, 2.0, 2.5) were prepared by the conventional solid state reaction. The effects of Al₂O₃ on the microstructure and microwave dielectric properties of Ba₄Nd_9.33Ti₁₈O₅₄ (BNT) ceramics were investigated. X-ray diffraction and backscatter electronic images showed that the Al₂O₃ additive gave rise to a second phase BaAl₂Ti₅O₁₄ (BAT). The formation mechanism and grain growth of the BAT phase were first discussed. Dielectric property test revealed that the Al₂O₃ additive had improved the dielectric properties of the BNT ceramics: increased the Q×f value from 8270 to 12,180 GHz and decreased the τ_f value from 53.4 to 11.2 ppm/°C. A BNT-A ceramic with excellent dielectric properties: ε_r=70.2, Q×f=12,180 GHz, τ_f=20 ppm/°C was obtained with 2.0 wt% Al₂O₃ added after sintering at 1320 °C for 4 h.     

Effect of 1 wt% LiF additive on the densification of nanocrystalline Y2O3 ceramics by spark plasma sintering

Densification of nanocrystalline cubic yttria (nc-Y₂O₃) powder, with 18 nm crystal size and 1 wt% LiF as a sintering additive was investigated. Specimens were fabricated by spark plasma sintering at 100 MPa, within the temperature range of 700-1500 °C. Sintering at 700 °C for 5 and 20 min resulted in 95% and 99.7% dense specimens, with an average grain size of 84 and 130 nm, respectively. nc-Y₂O₃ without additive was only 65% dense at 700 °C for 5 min. The presence of LiF at low sintering temperatures facilitated rapid densification by particle sliding and jamming release. Sintering at high temperatures resulted in segregation of LiF to the grain boundaries and its entrapment as globular phase within the fast growing Y₂O₃ grains. The sintering enhancement advantage of LiF was lost at high SPS temperatures.     

IBLC effect leading to colossal dielectric constant in layered structured Eu2CuO4 ceramic

Dielectric (ε_r′) studies of phase pure T′-type Eu₂CuO₄ ceramics of two markedly different grain sizes (D), prepared by (i) conventional powder mixing and (ii) citrate complexation-Pechini process, have been carried out in the frequency range 0.1 Hz to 1 MHz, and at temperatures −100 °C to 150 °C. ε_r′ is found to be highly grain size dependent. For the sample with coarse bar-like grains (D²~17×6 μm²) ε_r′ is >10³, and for the finer grain size sample with bimodal distribution (D₁~1 μm, D₂~3 μm) ε_r′ is ~10⁵; for both the samples, high ε_r′ value is nearly frequency independent over 500 Hz≤f<100 kHz and T≥30 °C. The impedance spectroscopy (IS) study has clearly shown that both, the coarse- and the fine-grained samples consist of semiconducting grains and insulating grain boundaries that primarily lead to an internal barrier layer capacitance (IBLC) effect. And thus, manifest colossal dielectric constant (ε_r′>10³) in Eu₂CuO₄ ceramics. The smaller grain size (Pechini) sample, with over an order higher number of grains and grain boundary network, showing over an order higher ε_r′ (~10⁵) compared to the coarse grained one, further endorses the IBLC effect.     

Properties and rapid consolidation of nanostructured MgO-MgAl2O4 composites

The rapid sintering of nanostructured MgO-MgAl₂O₄ composites was investigated with a high-frequency induction heated sintering process. The advantage of this process is that it allows for very quick densification to near theoretical density and prohibits grain growth in nanostructured materials. Highly dense nanostructured MgO-MgAl₂O₄ composites were produced with simultaneous application of 80 MPa pressure and an induced output current of total power capacity (15 kW) within 2 min. The sintering behaviors, grain sizes and mechanical properties of MgO-MgAl₂O₄ composites were investigated.     

Dielectric relaxation behavior and energy storage properties in Ba0.4Sr0.6Zr0.15Ti0.85O3 ceramics with glass additives

Ba_0.4Sr_0.6Zr_0.15Ti_0.85O₃ ceramics with SrO–B₂O₃–SiO₂ glass additives were prepared via the solid state reaction route. The effects of glass contents on the sintering behavior, dielectric properties, microstructures, and energy storage properties of BSZT ceramics were investigated. Dielectric breakdown strength of 22.4 kV/mm was achieved for BSZT ceramics with 20 wt% glass addition. Dielectric relaxation behavior was observed in dielectric loss versus temperature plots. In order to investigate the mechanism of dielectric breakdown performance, the relationship between dielectric breakdown strength and grain boundary barrier was studied by the measurements of breakdown strength and activation energy. A discharged energy density of 0.45 J/cm³ with an energy efficiency of 88.2% was achieved for BSZT ceramics with 5 wt% glass addition.     

Microstructural variation and dielectric properties of KTiNbO5 and K3Ti5NbO14 ceramics

KTiNbO₅ (KTN) and K₃Ti₅NbO₁₄ (3K5TN) ceramics sintered at 1150 °C and 1125 °C, respectively, exhibited a dense, homogeneous microstructure with a high relative density (≥96% of the theoretical density). Abnormal grain growth occurred in both specimens during sintering, and large (002) and (001) grains developed in KTN and 3K5TN ceramics, respectively. A dielectric constant (ε_r) of 13 and a dielectric loss of 2.9% at 10 MHz were obtained from KTN ceramics sintered at 1150 °C. The 3K5TN ceramics sintered at 1125 °C showed an ε_r of 15 and a dielectric loss of 12% at 10 MHz. The resistivity of KTN and 3K5TN ceramics was low and their ε_r and dielectric loss values displayed low-frequency dispersion (LFD); the presence of K⁺ ions between the layers could be responsible for their low resistivity and LFD.